氮离子束注入与贯穿小麦种子的生物效应初步研究

采用４７．９ＭｅＶ／ｕ和２０．４ＭｅＶ／ｕ１４Ｎ（７＋）离子束对小麦种子进行生物学效应研究。结果表明：１）重离子的贯穿和注入对小麦种子的生长势均有明显的抑制作用，剂量越大，抑制作用越强，而且注入作用高于贯穿；２）在种子的根尖细胞中出现的染色体畸变具有多种类型，畸变频率高于对照组１９８～５９２倍，而且注入比贯穿作用强；３）注入和贯穿处理两者同样有明显的诱变作用，可引起ＤＮＡ的损伤和修复     

中能氩离子束辐照麦胚自由基的ESR研究

用ＥＳＲ波谱技术，研究了室温下中能氩离子辐照小麦种子胚部产生的自由基，观察了自由基的稳定性，实验结果表明，种子中自由基浓度随种子含水量线性增加，自由基浓度随辐照剂量增加，然后趋于饱和，讨论了自由基与种子损伤的关系。根据实验数据和 自由基扩散理论估算了自由基在麦胚中扩散距离。     

中能氮离子束辐照小麦种子产生自由基的研究

用ＥＳＲ波谱术研究了室温下中能氮离子辐照小麦种子产生的自由基，发现氮离子贯穿和注入小麦种子产生的自由基浓度随剂量的变化具有不同的特征。对氮离子贯穿小麦种子产生的自由基浓度随剂量率的变化规律也进行了研究。     

80 MeV/u C-12离子诱变选育PHB高产菌株

用80MeV/u12C6+离子对一株积累聚β-羟基丁酸酯(PHB)的芽孢杆菌(BacillusP-9)进行诱变选育,最终获得PHB高产株菌G15,其PHB产量达2.93g/L,与出发菌株相比较,PHB积累量提高了1.5倍。研究结果表明,本试验辐照最佳剂量为15Gy。重离子辐照诱变育种效果显著,具有广阔的发展应用前景。     

Ion beam induced nucleation in amorphous GaAs layers during MeV implantation

To investigate the nonlinear dose dependence of the thickness of the recrystallized layer during ion beam induced epitaxial recrystallization at amorphous/crystalline interfaces GaAs samples were irradiated with 1.0 MeV Ar⁺, 1.6 MeV Ar⁺ or 2.5 MeV Kr⁺ ions using a dose rate of 1.4 × 10¹² cm⁻² s⁻¹ at temperatures between 50°C and 180°C. It has been found that the thickness of the recrystallized layer reaches a maximum value at T_max = 90°C and 135°C for the Ar⁺ and Kr⁺ implantations, respectively. This means that the crystallization rate deviates from an Arrhenius dependence due to ion beam induced nucleation and growth within the remaining amorphous layer. The size of the crystallites depends on the implantation dose. This nucleation and growth of the crystallites disturbes and at least blocks the interface movement because the remaining surface layer becomes polycrystalline. Choosing temperatures sufficiently below T_max the thickness of the recrystallized layer increases linearly with the implantation dose indicating that the irradiation temperature is too low for ion induced nucleation.     

低能重离子束注入小麦种子诱导根尖细胞有丝分裂畸变的研究

比较研究了低能重离子束注入小麦干种子和萌动的种子对种子发芽及根尖细胞有丝分裂畸变的影响。结果表明,离子注入对萌动的种子的发芽有明显的影响,而对干种子的发芽影响不明显。在一定剂量范围内(0-6×1016/cm2),N+注入诱导的萌动种子的有丝分裂畸变率略高于干种子,并且随辐射剂量的升高而升高;但超过一定的剂量(>6×1016/cm2),无论是干种子还是萌动种子的有丝分裂畸变率达到一定程度的饱和。就实验结果对N+离子束注入诱变的机理进行了一些探讨。     

47MeV／u的C^6^＋在CaVSn：YIG中辐照效应的研究

用兰州重离子研究装置（ＨＩＲＦＬ）首次进行了４７ＭｅＶ／ｕ的Ｃ＾６＾＋离子辐照ＣａＶＳｎ：ＹＩＧ的实验。通过穆斯堡尔效应和正电子寿命测量对４７ＭｅＶ／ｕ的Ｃ＾６＾＋离子在ＣａＶＳｎ：ＹＩＧ中的辐照效应进行了初步研究。发现辐照导致内磁场方向趋于各向同性分布，由穆斯堡尔谱未观察到非晶化现象。缺陷的数量随Ｃ＾６＾＋离子在样品中电子能量损失的增加而增加。     

25MeV／u ^40Ar^14＋辐照肝癌细胞的生物学效应

讨论了２５ＭｅＶ／ｕ ＾４０Ａｒ＾１４＋对培养的肝癌细胞ＳＭＭＣ－７７２１的生物学效应。结果表明：辐照后的癌细胞中出现多种染色体畸变类型，微核率比对照高得多，肝癌细胞的辐射受损程度与剂量呈正相关性，分次照射时，修复机制被逐渐激活，等剂量辐照的细胞损伤程度随辐照次数的增加而减轻。     

RBS studies of the lattice damage caused by 1 Me V Si implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

The lattice damage accumulation in GaAs and Al_0.3Ga_0.7As/GaAs superlattices by 1 MeV Si⁺irradiation at room temperature and 350°C has been studied. For irradiations at 350°C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 × 10¹⁵ + Si/cm² for GaAs, and is 5 × 10¹⁵ Si/cm² for Al_0.8Ga_0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350°C. The damage accumulation rate for 1 MeV Si ion implantation in Al_0.3Ga_0.7As/GaAs superlattice is less than that in GaAs.     

~(137)Cs辐照小麦干种子M_1代的辐射效应和细胞学分析

~(60)Co-γ射线辐照小麦干种子对M_1代的生物学和细胞学效应产生影响,这方面已有报道,而铯-137的辐射效应报道较少。本试验利用我所的铯-137和钴-60源不同剂量照射小麦干种子,比较M_1代的生物学及细胞学效应,为育种提供依据。     

重离子辐照对红酵母的诱变作用

应用重离子加速器的50MeV／u^12C^6 重离子对胡萝卜素生产菌-红酵母(Rhodotorula RY Strain)进行辐照处理,经酵母发酵实验,发现50MeV／u^12C^6 重离子对胡萝卜素生产菌-红酵母具有诱变作用。初步筛选到了胡萝卜素产量有变化的辐照变异菌株,并对这些辐照变异菌株进行了RFLP(限制性片段长度多态性)和RAPD(随机扩增DNA多态性)分析,这些工作为工业上利用重离子对胡萝卜素生产菌进行诱变育种展现了新的前景。     

80MeV/u 12C6+离子辐照小鼠头部对骨髓细胞周期分布的影响

研究重离子辐照小鼠头部对骨髓细胞周期分布的影响,为重离子放射治疗癌症和太空防护提供基础数据.80MeV/u能量的12C6 离子对BALB/c小鼠头部给以0、0.5、1、2、4、10Gy的照射,用流式细胞仪测骨髓细胞周期分布.随着重离子辐照剂量的增加,G1/G0期细胞出现明显阻滞(P＜0.05),而G2/M期细胞出现显著减少(P＜0.05).说明重离子辐照小鼠头部对小鼠骨髓细胞周期分布有明显影响,也同时表明电离辐射对骨髓细胞周期分布的影响也有一种间接作用.     

碳离子束辐照对甜高粱主要性状的影响

利用兰州重离子加速器国家实验室(HIANLL)提供的100 MeV/u碳离子束对甜高粱品种BJ0601和BJ0602进行了不同剂量的辐照处理,并用SPSS13.0软件分析了碳离子束辐照剂量和甜高粱主要性状节间数、株高、茎粗、含糖量及单秆重的相关性,试验结果表明:不同的辐照剂量对甜高粱节间数、株高、茎粗、含糖量及单秆重产生了明显的影响,表现出不同程度的相关性.另外,早熟突变株BJ0601-1 M2代各节的平均含糖量高于BJ0601,说明碳离子束辐照可能引起甜高梁含糖量的提高.     

Extending Bragg peak of heavy ion beam and melanoma cell inactivation measurement

A rotating range modulator was designed and manufactured.which is applied to extend Bragg peak of heavy ion beam.Bragg curves of 75MeV/u ^16O and 75MeV/u ^12C ion beams through this range modulator were measured respectively and two evident spread-out Bragg peaks corresponding to the modulated beams above are shown.In addition,inactivation effect of the modulated 75MeV/u ^16O ion beam at nine different penetration depths on melanoma cells(B16) was measured.Results indicate that lethal effects at the spread-out Bragg peak region are larger than at the plateau of the particle beam entrance.     

重离子辐照诱导DNA双链断裂的剂量率效应

利用不同剂量率的50MeV/u^12C^6 辐照B16黑色素瘤细胞的脱蛋白DNA,采用脉冲场凝胶电泳技术对DNA双链断裂（DSB）的诱导和片段的分布进行了研究。结果发现,在剂量率分别为3Gy/min和30Gy/min的情况下,DNA片段释放百分比（PR）都随着剂量的增加而增加,并在超过一定剂量之后趋于相似的准阈值;3Gy/min辐照诱导DSB的产额为0.40DSBs(100Mbp.Gy）,30Gy/min辐照诱导的DSB产额准确值无法得到;30Gy/min辐照诱导DSB的截面为2.14μm^2,是3Gy/min的3.1掊。所有结果都表明剂量率越高,诱导DSB越有效。另外,3Gy／min辐照诱导DSB片段在－860kbp处有一个片段峰,而30Gy/min没有,说明剂量率可以影响DSB片段的分布。     

质子辐射环境下PNP输入双极运算放大器辐照效应与退火特性

对不同偏置下的PNP输入双极运算放大器在3、10 MeV两种质子能量下的辐照效应进行了研究,并将质子辐射损伤效应与0.5Gy(Si)/s剂量率60 Coγ射线辐射损伤效应进行了比较,以探究质子和γ射线产生的辐射损伤之间的对应关系。结果表明,运放LM837对γ射线的敏感程度较10 MeV质子和3 MeV质子的小,然而其室温退火后的后损伤效应却更严重;相同等效总剂量条件下,10 MeV质子造成的损伤较3 MeV质子的高;质子辐射中器件的偏置条件对损伤影响不大。     

不同能区重离子束在小麦育种上的比较研究

介绍了三个不同能区的重离子用于小麦育种的室内实验方法和大田培育情况，并对半致死剂量，细胞学观察和育种情况分别给出了初步结果，最后探讨了三种不同能区的重离子在作物育种上诱变机理。     

Damage production in GaAs during MeV ion implantation

The influence of the nuclear and electronic energy loss on the damage production in GaAs has been studied by Se⁺ ion implantation at T_I = 293 K with energies ranging from 2 MeV up to 20 MeV. The ion dose was varied between 5 × 10¹² /cm² and 1 × 10¹⁵ /cm². The damage production was investigated using RBS in channeling regime. Temperature and energy dependent backscattering measurements and TEM investigations were performed to study the kind of defects in more detail. The resulting defect profiles are compared with the depth distribution of the nuclear and electronic energy loss which were simulated by TRIM 87. The results show that the remaining defect concentration strongly decreases with increasing implantation energy even if the same energy density is deposited into nuclear processes. We suppose, that the electronic energy loss increases the defect transformation and annealing during implantation at T_I = 293 K. The defects in the samples implanted with energies greater than 5 MeV are characterized as point defects, point defect clusters and small dislocation loops; the kind of defects are the same over the whole implantation depth and the existence of amorphous zones can be widely excluded.     

Effect of helium preinjection and prior thermomechanical treatment on the microstructure of type 316 SS

Samples of 316 SS were preinjected with 15 appm helium either hot (650°C) or cold (room temperature) and irradiated with 3 MeV Ni⁺ ions to a dose level of 25 dpa at 625°C in order to test the validity of helium preinjection as a means of simulation of transmutant helium production. Results for preinjected and single-ion irradiated samples were compared to samples irradiated at 625°C to a 25 dpa dose level with 3 MeV Ni⁺ and simultaneously injected with helium at a rate of 15 appm He/dpa (dual-ion irradiated samples). Preinjected samples exhibited bimodal cavity size distributions. Preinjected samples of solution annealed or solution annealed and aged material showed lower swelling than dual-ion irradiated samples. However, He preinjected 20% cold worked samples showed greater swelling than dual-ion irradiated samples.     

中能碳离子束对不同贯穿深度上黑色素瘤B16细胞的辐照存活效应

测量了49．30MeV/u及经脊形过滤器展宽的Bragg峰的74.55MeV/u^12C离子束在不同贯穿深度上辐射后黑色素瘤B16细胞的存活率。结果显示,在以存活为终点的B16细胞生物学效应与碳离子束能量沉积同步增大。即Bragg或展宽的Bragg峰区内细胞存活率远低于离子束入射或出射通道处的细胞存活率。通过实验测量与剂量平均LET结合的线性平方模型理论计算存活曲线的比较,发现在实验测量误差范围内两者符合较好。提示：剂量平均LET结合线性平方模型可能是预测中能重离子束贯穿深度上B16细胞存活效应的一种有效的方法。