共查询到20条相似文献,搜索用时 31 毫秒
1.
Juntao Li Chengquan Xiao Xingliang Xu Gang Dai Lin Zhang Yang Zhou An Xiang Yingkun Yang Jian Zhang 《半导体学报》2017,38(2):024003-4
This paper presents the design and fabrication of an etched implant junction termination extension(JTE) for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. The simulation results show that the etched implant JTE method can improve the blocking voltage of SiC PiN diodes and also provides broad process latitude for parameter variations, such as implantation dose and activation annealing condition. The fabricated SiC PiN diodes with the etched implant JTE exhibit a highest blocking voltage of 4.5 kV and the forward on-state voltage of 4.6 V at room temperature. These results are of interest for understanding the etched implant method in the fabrication of high-voltage power devices. 相似文献
2.
碳化硅(SiC)PiN二极管是应用在高压大功率整流领域中的一种重要的功率二极管。受SiC外延材料的载流子寿命限制以及常规SiC PiN二极管较低的阳极注入效率的影响,SiC PiN二极管的正向导通性能较差,这极大限制了其在高压大电流领域的应用。文章提出了一种带P型埋层的4H-SiC PiN二极管,较常规SiC PiN二极管增强了阳极区的少子注入效率,降低了器件的导通电阻,增大了正向电流。仿真结果表明,当正向偏压为5 V时,引入P型埋层的SiC PiN二极管的正向电流密度比常规SiC PiN二极管提升了52.8%。 相似文献
3.
McNutt T.R. Hefner A.R. Jr. Mantooth H.A. Duliere J. Berning D.W. Singh R. 《Power Electronics, IEEE Transactions on》2004,19(3):573-581
Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the temperature dependence of the on-state characteristics, and the di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The model results are presented for 1500 V SiC Merged PiN Schottky (MPS) diodes, 600 V Schottky diodes, and 5000 V SiC PiN diodes. The devices studied have current ratings from 0.25 A to 5 A and have different lifetimes resulting in different switching energy versus on-state voltage trade-offs. The devices are characterized using a previously reported test system specifically designed to emulate a wide range of application conditions by independently controlling the applied diode voltage, forward diode current, di/dt, and dv/dt at turn-off. A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used. 相似文献
4.
Yifan Jiang Woongje Sung Jayant Baliga Sizhen Wang Bongmook Lee Alex Huang 《Journal of Electronic Materials》2018,47(2):927-931
This paper reports the study of the fabrication and characterization results of 10-kilo-volt (kV) 4H-SiC merged PiN/Schottky rectifiers. A metal contact process was developed to make the Schottky contact on n-type SiC and ohmic contact on p-type SiC at the same time. The diodes with different Schottky contact width were fabricated and characterized for comparison. With the improvement quality of the Schottky contact and the passivation layer, the devices show low leakage current up to 10 kV. The on-state characteristics from room temperature to elevated temperature (423 K) were demonstrated and compared between structures with different Schottky contact width. 相似文献
5.
6.
Hefner A.R. Jr. Singh R. Jih-Sheg Lai Berning D.W. Bouche S. Chapuy C. 《Power Electronics, IEEE Transactions on》2001,16(2):273-280
The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power converter efficiency and electromagnetic interference (EMI). It is shown that a newly developed 1500-V SiC merged PiN Schottky (MPS) diode has significant performance advantages over Si diodes optimized for various voltages in the range of 600 V through 1500 V. It is also shown that a newly developed 5000 V SiC PiN diode has significant performance advantages over Si diodes optimized for various voltages in the range of 2000 V through 5000 V. In a test case power converter, replacing the best 600 V Si diodes available with the 1500 V SiC MPS diode results in an increase of power supply efficiency from 82% to 88% for switching at 186 kHz, and a reduction in EMI emissions 相似文献
7.
This paper presents a study of the performance of high-voltage Si and 4H-SiC diodes in a DC-DC buck converter. Device operation in both hard- and zero-voltage switching conditions is presented with the help of measurements and two-dimensional (2-D) mixed device-circuit simulations. Experimental results show that SiC PiN diodes have a strong potential for use in high-speed high-voltage power electronics applications operating at high temperature. A combination of low excess carrier concentration and low carrier lifetime results in superior switching performance of the 4H-SiC diode over ultrafast Si diodes. Soft switching is shown to minimize the switching loss and allow operation at higher switching frequencies using Si diodes. The power loss of 4H-SiC diodes is dominated by conduction loss. Consequently, soft-switching techniques result in a marginal reduction in power loss. However, the low overall power loss implies that SiC diodes can be used at very high switching frequencies even in hard-switching configurations. 相似文献
8.
SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics.Compared with the conventional power Schottky barrier diode,the device structure is featured by a highly doped drift region and embedded floating junction region,which can ensure high breakdown voltage while keeping lower specific on-state resistance,solved the contradiction between forward voltage drop and breakdown voltage.The simulation results show that with optimized structure parameter,the breakdown voltage Can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2. 相似文献
9.
10.
The influence of high temperature (up to 800C) annealing on the current-voltage characteristics of n-type 6H-SiC Schottky
diodes is presented. Our experimental results indicate that high-temperature annealing can result in the improvement of the
forw ard and reverse electrical characteristics of SiC Schottky diodes by repairing any leaky low barrier secondary diode
parallel to the primary diode that may be present due to the barrier inhomogeneities at the Schottky contact interface. 相似文献
11.
Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes 总被引:2,自引:0,他引:2
Q. Zhang V. Madangarli M. Tarplee T. S. Sudarshan 《Journal of Electronic Materials》2001,30(3):196-201
Current-voltage (I–V) characteristics of n- and p-type 6H−SiC Schottky diodes are compared in a temperature range of room
temperature to 400°C. While the room temperature I–V characteristics of the n-type Schottky diode after turn-on is more or
less linear up to ∼100 A/cm2, the I–V characteristics of the p-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation
in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities
(>125 A/cm2) the forward voltage drop across p-type Schottky diodes is lower than that across n-type Schottky diodes on 6H−SiC. High
temperature measurements indicate that while the on-state resistance of n-type Schottky diodes increases with increase in
temperature, the on-state resistance of p-type Schottky diodes decreases with increase in temperature up to ∼330 K. 相似文献
12.
This paper propose a novel reliability analysis approach for electrostatic discharge (ESD) stress on 4H-SiC junction barrier Schottky (JBS) diodes using the technology of Micro-Raman spectroscopy. Several conventional analysis are firstly used to determine the failure site after the JBS diodes are destructed by ESD stress, including optical microscope (OM), Photoemission microscopy (PEM) and scanning electron microscopy (SEM). Then, the Micro-Raman spectroscopy is applied to analyze element identification and crystal structure of micro failure site. The analysis reveals that high electric field and high temperature concentrate in the high-voltage termination, resulting in diode burnout and changing the physical microstructure of base SiC. Furthermore, in the micro failure site, 4H-SiC with different Raman spectrum from base 4H-SiC are clearly found, and carbon escapes out from base SiC by combustion, leaving a mixture of amorphous silicon and polysilicon, which is decomposed from the base SiC on the failure surface. 相似文献
13.
Morisette D.T. Cooper J.A. Jr. Melloch M.R. Dolny G.M. Shenoy P.M. Zafrani M. Gladish J. 《Electron Devices, IEEE Transactions on》2001,48(2):349-352
The static and dynamic characteristics of large-area, high-voltage 4H-SiC Schottky barrier diodes are presented. With a breakdown voltage greater than 1200 V and a forward current in excess of 6 A at 2 V forward bias, these devices enable for the first time the evaluation of SiC Schottky diodes in practical switching circuits. These diodes were inserted into standard test circuits and compared to commercially available silicon devices, the results of which are reported here. Substituting SiC Schottky diodes in place of comparably rated silicon PIN diodes reduced the switching losses by a factor of four, and virtually eliminated the reverse recovery transient. These results are even more dramatic at elevated temperatures. While the switching loss in silicon diodes increases dramatically with temperature, the SiC devices remain essentially unchanged. The data presented here clearly demonstrates the distinct advantages offered by SiC Schottky rectifiers, and their emerging potential to replace silicon PIN diodes in power switching applications 相似文献
14.
《Electron Devices, IEEE Transactions on》2008,55(8):1871-1874
15.
In this paper, physical models for vertical 4H-silicon carbide (4H-SiC) Schottky diodes are used to develop a design method, where a maximum cutoff frequency for a given punch-through is achieved. The models presented are also used to extract microwave simulator computer-aided design (CAD) models for the devices. A device process was developed and Schottky diodes were fabricated in-house. Characterization of the devices was performed and compared to the theoretical models with good agreement. A demonstrator singly balanced diode mixer was simulated using the developed models. The mixer was fabricated using the in-house developed diodes, and measurements on the mixer show good agreement with the CAD simulations. A conversion loss of 5.2 dB was achieved at 850 MHz, and an excellent IIP/sub 3/ of 31 dBm at 850-MHz RF was measured, at 30-dBm P/sub LO/. These results verify the enhanced properties of the SiC Schottky diode compared to other nonwide bandgap diodes. 相似文献
16.
碳化硅功率器件及其应用的最新研发进展 总被引:1,自引:0,他引:1
本文基于最近几年发现的新效应和创新设计,综合评述了4H-SiC功率器件:MOSFET、IGBT、SiCGT和PiN二极管的最新研发进展,包括研发过程遇到的主要技术难题,器件特性和初步应用。实验初步验证,SiC功率器件具有高效节能和实现高功率密度的能力。 相似文献
17.
We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency. 相似文献
18.
Hang Zhou Jingrong Yan Jialin Li Huan Ge Tao Zhu Bingke Zhang Shucheng Chang Junmin Sun Xue Bai Xiaoguang Wei Fei Yang 《半导体学报》2023,44(11):113101-1-113101-10
The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension (JTE) structures for power devices. However, achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon. Many previously reported studies adopted many new structures to solve this problem. Additionally, the JTE structure is strongly sensitive to the ion implantation dose. Thus, GA-JTE, double-zone etched JTE structures, and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage. They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes. This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad. Presently, the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes. 相似文献
19.
The performance of the DI segmented collector (SC)-LIGBT is compared to the collector shorted (CS)-LIGBT. The SC-LIGBT allows for adjusting the tradeoff between switching speed and on-state voltage drop by simply changing the P+ collector segment width during device layout. In contrast to previously reported junction isolated (JI) devices, the DI SC-LIGBT was observed to have a turnoff speed similar to the CS-LIGBT with a higher forward drop than the conventional LIGBT. The on-state performance of the integral diodes of the SC-LIGBTs was found to be superior to the integral diode of the CS-LIGBT. The integral diodes of both the CS and the SC-LIGBTs were found to have much superior switching characteristics compared to a lateral PiN diode at the expense of a higher on-state voltage drop. Thus, the superior switching characteristics of the integral diode in the SC-LIGBT complements its fast switching behavior making this device attractive for compact, high frequency, high efficient, power ICs. 相似文献