TD站点GPS类故障告警处理简

文章介绍了TD-SCDMA网络中GPS天线系统安装时的注意事项。在日常的TD站点GPS类维护工作中出现的故障有很多种,如星卡天线故障告警,时钟参考源异常告警,系统时钟失锁告警,星卡维护链路异常告警,星卡时钟输出异常告警,GPS状态告警,时钟源状态或锁相环告警等,文章对这些常见故障告警产生的原因进行分析,并提出了故障告警的解决方法。     

TD站点GPS类故障告警处理

文章介绍了TD-SCDMA网络中GPS天线系统安装时的注意事项。在日常的TD站点GPS类维护工作中出现的故障有很多种,如星卡天线故障告警,时钟参考源异常告警,系统时钟失锁告警,星卡维护链路异常告警,星卡时钟输出异常告警,GPS状态告警,时钟源状态或锁相环告警等,文章对这些常见故障告警产生的原因进行分析,并提出了故障告警的解决方法。     

FMX(故障管理专家)应用初探

FMX原理爱立信公司开发的故障管理专家(FaultManagementExpert，FMX)是在TMOS故障管理器（FM）里面一种可选择的产品（图1）。FMX具有将专家经验知识结合到故障管理器中的功能，提高了工作效率和网络安全。FMX可以为使用者提供对网络工作状态更加清晰和更加准确的理解，提高故障管理效率。在TMOS故障管理器里面，为了减少或改进告警信息，通过FMX，故障管理系统可以自动运行已预先编好的规则，隐藏不重要的告警，改变告警级别，对告警做相关性处理，对频繁出现的告警可以产生新的告警，突出网络中存在的问题，引起重视，或自动…     

MD110交换机中继故障的分析与处理

MD110交换机中继故障可引起整个专网双向或单向、全部或部分中继电路通信中断，使全部分机或某一LIM分机不能出入局以及出入局话务时断时续。出现这种情况时，要具体分析，查找出故障原因，再按排除故障的方法和步骤进行有效的处理。1中继电路常见故障（1）程控交换机中继设备本身故障交换机中继设备本身故障现象比较明显，其告警多集中为268～274（不包括272）告警码中的某一个，且告警记录删除不掉；相应故障端口被长时间闭锁，不能自动恢复。这时可按照维护手册中相应的流程进行测试，更换相应的插件设备。（2）程控数据出现了问题（如…     

CATV干线系统供电检修一例

1　故障现象在有线电视网络中,曾出现过机房供给主放大器及干线放大器的ＰＳ6Ａ电源供给器自动告警,但前端主放大器及干线系统还能正常运行的不正常现象。2　故障处理在排除该故障过程中,从查找ＰＳ6Ａ电源供给器自动告警原因入手。首先检查ＰＳ6Ａ电源供给器是否出现故障,将供电器的电源切断,此时前端主放大器及干线系统运行仍较正常,用表测得主放大器电源电压正好是60Ｖ,呈现一种奇特的状态。根据前端主放大器ＰＳ6Ａ电源供给器发生故障或网络干线及放大器发生短路都会导致不能正常供电的原理,可判定此种故障不是ＰＳ6Ａ电源供给器自身故…     

新品推介

TL-R4000 双WAN口企业级路由器 TL-R4000 双WAN口企业级路由器提供两个WAN口,可同时接两条进线,出口带宽成倍增加,下载速度大大提高;全自动负载均衡与实时备份,依据带宽自动分配流量;线路故障自动屏蔽,故障时流量自动重分配并自动告警;根据源或目的地址指定优     

城镇燃气调压装置故障智能诊断适用性研究

利用信号处理和人工智能诊断方法[1]，进行调压器的故障判断研究，根据检测所获得的信息数据，对不同类型的数据进行特征提取。基于中低压管网燃气调压器的出口压力数据，利用小波包频带能量法提取各个数据类型所对应的特征向量，作为神经网络的输入样本，构造含有多种故障信息的BP神经网络模型[2]。通过大量的学习建立了不同数据类型和原始数据之间的关系，实现了对数据的智能判断。该方法可有效地指导维修人员进行调压装置运行维护，及时地发现调压器故障，对于提高调压装置安全性与稳定性具有重要的意义。     

电视发射机自动调压系统的原理与改进

电视发射机对供电电压的要求比较高,供电电压的波动,特别是在一些电网电压波动较大的地区,会严重影响机器的稳定工作,缩短电子管寿命,甚至会造成重大的机器故障,因此电视发射机都配备了自动调压器,将不稳定的市电调整到发射机的要求范围.3 kW以上的发射机配备的都是油冷调压器与调压控制器组成的自动调压器,我台选用的是上海电压调整器厂的ZK3-380型台式自动控制器和沈阳生产的50 kW油冷调压器,该类设备在全国拥有量较大,但是由于设计上的原因,在使用过程中经常出现误保护现象,我们经过认真分析和研究,对该系统进行了改进,实际使用效果良好.     

基于BCM的汽车发电机调节器设计

为了使车辆电气系统具有更好的稳定性,在汽车发电机电压调节器有故障,系统状态电压出现过大波动时,能利用车载智能BCM进行调压工作,设计了基于BCM的汽车发电机调节器。介绍了系统的整体结构、设计要求、工作原理及模拟测试。所设计系统实现了对发电机输出电压的监测,并在其过高或过低时进行调节,同时具有切断原调压电路功能,达到保护作用,使车辆电气系统能更安全地工作。     

UPS故障排除一例

ＵＰＳ故障排除一例赵辉呼和浩特地球站使用的ＵＰＳ为ＥＸＩＤＥ公司的产品，型号为２０４５（该机１９８５年投入使用）。在１９９３年１月发生的一次故障较有特点。出现故障时ＵＰＳ告警，告警显示为：ＩＮＶＬＥＧＯＴＥＭＰ（逆变器插件温度过高）从告警显示来看，是...     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.