共查询到4条相似文献,搜索用时 0 毫秒
1.
G. Molas M. Bocquet H. Grampeix J.P. Colonna P. Brianceau C. Bongiorno G. Pananakakis B. De Salvo 《Microelectronic Engineering》2008,85(12):2393-2399
In this paper, we evaluate the potentiality of hafnium aluminium oxide (HfAlO) high-k materials for control dielectric application in non-volatile memories. We analyze the electrical properties (conduction and parasitic trapping) of HfAlO single layers and SiO2/HfAlO/SiO2 triple layer stacks as a function of the HfAlO thickness and Hf:Al ratio. A particular attention is given to the electrical behaviour of the samples at high temperature, up to 250 °C. Experimental results obtained on silicon nanocrystal memories demonstrate the high advantage of HfAlO based control dielectrics on the memory performances for Fowler-Nordheim operation. Then an analytical model is presented, to simulate the program erase characteristics in the transient regime and at saturation, depending on the high-k control dielectric properties. A very good agreement is obtained between the experimental data and the simulation results. 相似文献
2.
The effects of low temperature annealing,such as post high-k dielectric deposition annealing(PDA),post metal annealing(PMA)and forming gas annealing(FGA)on the electrical characteristics of a metal–oxide–semiconductor(MOS)capacitor with a TiN metal gate and a HfO2dielectric are systematically investigated.It can be found that the low temperature annealing can improve the capacitance–voltage hysteresis performance significantly at the cost of increasing gate leakage current.Moreover,FGA could effectively decrease the interfacial state density and oxygen vacancy density,and PDA could make the flat band positively shift which is suitable for P-type MOSs. 相似文献
3.
Chang-Ta Yang Kuei-Shu Chang-Liao Hsin-Chun Chang Tzu-Chen Wang Wen-Fa Wu 《Microelectronic Engineering》2007,84(12):2916-2920
Interaction of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics has been extensively studied. Metal-oxide-semiconductor (MOS) device formed with SiO2 gate dielectric and HfxTayN metal gate shows satisfactory thermal stability. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis results show that the diffusion depths of Hf and Ta are less significant in SiO2 gate dielectric than that in HfOxNy. Compared to HfOxNy gate dielectric, SiO2 shows better electrical properties, such as leakage current, hysteresis, interface trap density and stress-induced flat-band voltage shift. With an increase in post metallization annealing (PMA) temperature, the electrical characteristics of the MOS device with SiO2 gate dielectric remain almost unchanged, indicating its superior thermal and electrical stability. 相似文献
4.
Chihoon Lee Sang Yong No Da Il Eom Cheol Seong Hwang Hyeong Joon Kim 《Journal of Electronic Materials》2005,34(8):1104-1109
In order to examine the electrical and physical properties of Al2O3 layers with dual thickness on a chip, Pt gate/Al2O3 with dual thickness/p-type Si (100) samples were fabricated using atomic-layer deposition, separation photolithography, and
100:1 HF wet etching to remove the first Al2O3 layer. Dual metal-oxide-semiconductor (MOS) capacitors with thin (physical thickness, ∼4.5 nm, equivalent oxide thicknesses
(EOT): 2.8 nm) and thick (physical thickness, ∼8.2 nm, EOT: 4.3 nm) Al2O3 layers showed a good leakage current density of −5.4×10−6 A/cm2 and −2.5×10−9 A/cm2 at −1 V, respectively; good reliability characteristics as a result of the good surface roughness; low capacitance versus
voltage measurements (C-V) hysteresis; and a good interface state density (∼7×1010 cm−2eV−1 near the midgap) as a result of pre-rapid thermal annealing (pre-RTA) after depositing the Al2O3 layer compared with the single MOS capacitors without the pre-RTA. These results suggest that dual Al2O3 layers using the dual gate oxide (DGOX) process can be used for the simultaneous integration of the low power transistors
with a thin Al2O3 layer and high reliability regions with a thick Al2O3 layer. 相似文献