高功率脉冲磁控溅射电源的研制

高功率脉冲磁控溅射(HPPMS)因其高离化率而得到广泛关注.高压大电流脉冲电源是实现该技术的重要环节之一.本论文介绍了一种HPPMS电源,该电源由充电电源、斩波输出两部分组成,给出了主电路框图.分析了大电流对斩波开关过电压的影响,采用RC吸收和续流有效地抑制了电压过冲,用所研制的电源进行HPPMS镀膜试验,结果表明电源运行稳定可靠,制备的薄膜表面清洁、致密,其平均表面粗糙度很低.可以预见HPPMS技术将会促进镀膜技术的发展.     

高脉冲功率密度复合磁控溅射电源研制及放电特性研究

高功率脉冲磁控溅射技术(HPPMS)由于能够产生较高的离化率而受到人们的重视。为了提高离化率/沉积速率协同效应,基于直流和脉冲耦合叠加技术我们研制了高功率密度复合脉冲磁控溅射电源,并对高功率复合脉冲磁控溅射放电特性进行研究。结果表明脉冲峰值电流随脉冲电压的增加而增加,但随着脉冲宽度的增加而减小。在高功率脉冲期间工件上获得的电流可以增加一个数量级以上,表明磁控离化率得到显著增强。     

可调脉冲功率(MPP)磁控溅射电源研制及放电特性的研究

可调脉冲电源MPP(modulated pulsed power)磁控溅射技术是一种新型的高功率磁控溅射技术.基于STC12C5A60S2单片机为控制单元研制了MPP电源.电源可以输出多种脉冲波形,能够实现优化的高功率脉冲磁控溅射工艺.MPP放电模式表现为初始的弱放电和随后的高功率大电流放电行为.MPP放电电压影响着高功率放电电流和脉冲宽度,而放电气压主要影响起辉时刻,但对放电电流大小影响不大.引入引燃脉冲可实现低气压下的高功率大电流放电.     

高功率脉冲磁控溅射试验平台设计及放电特性研究

高功率脉冲磁控溅射(HPPMS)因其高离化率而得到广泛关注,是目前的热点研究方向,为此我们搭建了试验平台并对HPPMS的放电特性进行了研究.结果表明:脉冲峰值电流随脉冲电压的增加而增加,随着气压的增加而增加.本文为进一步研究高功率脉冲磁控溅射提供了硬件条件和参考.     

高功率脉冲磁控溅射复合电源及其电弧特性研究

高功率脉冲磁控溅射因其高离化率得到广泛关注,是磁控溅射领域的新方向。随着对高功率脉冲磁控溅射放电和等离子特性的深入研究,制约高功率脉冲磁控溅射应用的主要不足有:沉积速率低,容易进入电弧放电影响膜层品质。本文从电源角度出发,针对高功率脉冲磁控溅射的高功率大电流特点,采用复合直流/脉冲电源提升高功率脉冲磁控溅射的沉积速率,采用电弧抑制电路避免电弧对膜层品质的危害。结果表明,复合高功率脉冲磁控溅射电源的设计有利于改善沉积速率;电弧抑制电路可快速检测,并通过电弧抑制回路快速释放残存能量,避免了电弧对高功率脉冲磁控溅射的影响。     

新型双极性高功率脉冲磁控溅射电源及放电特性研究

独立设计研制了新型两段式双极性脉冲高功率脉冲磁控溅射电源,本电源具备3种工作模式:(1)传统高功率脉冲磁控溅射(HiPIMS)放电模式,(2)双极性脉冲高功率脉冲磁控溅射(BP-HiPIMS)放电模式和(3)两段式双极性脉冲高功率脉冲磁控溅射(DBP-HiPIMS)放电模式。特别是新提出的第三种工作模式,两段式双极性脉冲较传统的单段双极性脉冲具有较大的优势。本文研究了在传统BP-HiPIMS和新DBP-HiPIMS条件下,正向脉冲对Cr靶在Ar气气氛下的放电特性的影响。研究发现:随着正向脉冲电压的增加,BP-HiPIMS和DBP-HiPIMS基体净离子平均电流均明显提高,且相比传统BP-HiPIMS模式,新型DBP-HiPIMS放电模式在不同正向脉冲电压时均具有更高的基体净离子平均电流。正向脉冲电压为100V时,在基体偏压为0V和60V条件下,DBP-HiPIMS模式的基体净离子平均电流较传统BP-HiPIMS模式分别提高47.0%和30.3%。表明新型DBP-HiPIMS放电模式能够进一步提高正向脉冲对离子的推动加速作用,这将有利于膜层质量的提高。     

高功率脉冲磁控溅射制备TiNx涂层研究

采用高功率复合脉冲磁控溅射技术(HPPMS)在316不锈钢、硬质合金基体上沉积了TiN薄膜,研究不同N2流量下TiNx膜层的沉积速率、硬度、晶体生长取向、摩擦磨损等性能,并在相同的平均靶电流下与直流磁控溅射制备的TiN薄膜对比.结果表明:HPPMS制备的膜层更加致密,在氩氮流量比为7.4∶1时膜层显微硬度达2470 HV,晶粒尺寸也明显小于直流磁控溅射制备的TiN,摩擦磨损性能也得到了改善.     

复合高功率脉冲磁控溅射放电等离子体特性

高功率脉冲磁控溅射具有高的金属离化率,在薄膜制备表现出巨大的优势,成为当前磁控溅射技术领域一个新的发展趋势。高功率脉冲磁控溅射的放电特性、等离子体特性等微观参数对薄膜质量控制具有决定性作用,分析宏观参数如何影响微观参数,有利于提高薄膜质量,稳定工艺。因此,本文研究了脉冲与直流电源并联模式的复合高功率脉冲磁控溅射过程中,脉冲电压(400~800 V)对Ti、Cr靶在Ar气氛中的放电特性、等离子体参数(等离子体电势、电子温度、电子密度)、基体电流的影响。结果表明:复合高功率脉冲磁控溅射Ti、Cr靶放电过程中,脉冲电压的增加有利于脉冲作用期间的靶电压、靶电流、基体电流增加;当Ti靶脉冲电压为600 V或Cr靶脉冲电压为700 V时,电子密度出现较大值。Cr靶与Ti靶放电相比,前者的靶电流、基体电流、等离子体电势、电子温度比后者更高,而电子密度却更低。     

高功率脉冲磁控溅射技术的发展与研究

高功率脉冲磁控溅射技术(HPPMS)作为一种溅射粒子离化率高、可以沉积致密、高性能薄膜的新技术已经在国外广泛研究,但在国内尚未见研究报道.本文介绍了近十年来HPPMS技术在电源、脉冲形式、放电行为和薄膜沉积等方面的研究进展.在HPPMS过程中,粒子随脉冲开关通过电子冲击和电荷交换电离,并按照双极扩散理论向基体附近传输,离子能量分布随工作气压的不同而呈现不同的分布特征.这些放电特征有利于获得更宽的工艺范围和优异的膜层性能,最后介绍了我们实验室在HPPMS方面的研究工作.     

脉冲电压对HPPMS制备CrN薄膜的组织结构与力学性能的影响

采用复合高功率脉冲磁控溅射技术在单晶Si片、高速钢和玻璃上制备CrN薄膜。分别研究了脉冲电压在500,600,700,750 V时对薄膜的组织结构和力学性能的影响。结果表明,随着脉冲电压的增加,靶材离化率增加,靶电流以及溅射原子离子数量级能量均增大,使得沉积的薄膜组织结构更加致密,晶粒逐渐细化,表面更加光滑,硬度提高。高功率脉冲磁控溅射技术具备了磁控溅射技术制备的薄膜表面光滑优势,以及电弧离子镀高离化率特点,获得了结构性能优异的CrN薄膜。     

基于FPGA的数字化中频磁控溅射电源设计

介绍了一种全数字控制的中频磁控溅射电源设计.主电路前级采用直流斩波调压,后级采用全桥逆变的电路结构.控制电路由现场可编程门阵列(FPGA)计算产生高分辨率的数字脉宽调制信号(DPWM)实现.电源工作于恒流模式,通过PID算法调节Buck斩波电路的驱动DPWM来实现闭环控制.全桥逆变电路的驱动信号由FPGA计算产生,通过按键可设置驱动的DPWM,输出所需的固定频率和占空比的矩形波.对于靶面微打弧和强打弧,FPGA采取不同的保护措施.最后制作了5kW的样机进行验证,实验证明,方法可行,具有好的应用前景.     

Auxiliary subsystems of a General-Purpose IGBT Stack for high-performance laboratory power converters

A PWM converter is the prime component in many power electronic applications such as static UPS, electric motor drives, power quality conditioners and renewable-energy-based power generation systems. While there are a number of computer simulation tools available today for studying power electronic systems, the value added by the experience of building a power converter and controlling it to function as desired is unparalleled. A student, in the process, not only understands power electronic concepts better, but also gains insights into other essential engineering aspects of auxiliary subsystems such as start-up, sensing, protection, circuit layout design, mechanical arrangement and system integration. Higher levels of protection features are critical for the converters used in a laboratory environment, as advanced protection schemes could prevent unanticipated failures occurring during the course of research. This paper presents a laboratory-built General-Purpose IGBT Stack (GPIS), which facilitates students to practically realize different power converter topologies. Essential subsystems for a complete power converter system is presented covering details of semiconductor device driving, sensing circuit, protection mechanism, system start-up, relaying and critical PCB layout design, followed by a brief comparison to commercially available IGBT stacks. The results show the high performance that can be obtained by the GPIS converter.     

多元气体大电流MAG焊试验系统

本文研制开发了一套多元气体大电流MAG焊试验系统 ,它包括一元化控制的IGBT逆变电源 ,电枢电压与速度反馈双闭环控制的双驱动送丝系统 ,双水冷焊枪以及质量流量闭环控制的精密气体配比供给系统。多元气体大电流MAG焊接试验证明 ,该系统具有焊接电源动态响应速度快 ;送丝速度稳定 ,调速范围宽 ,气体配比精密的特点 ,实现了1.2mm焊丝大电流MAG焊接高效的目标 ,其熔敷速率为普通MAG焊的2～ 3倍。     

A modified circuit topology for inductive pulsed power supply based on HTSPPTs

High temperature superconducting pulsed power transformer (HTSPPT) provides an efficient method for inductive energy storage and current multiplication. The primary inductor of HTSPPT used for energy storage is made of high temperature superconducting coils, and the secondary inductor used for current pulse generation is made of normal conductor coils. In the initial circuit, the secondary inductor generates current pulse by switching out the coupled primary superconducting inductor. However, during the switching period, the leakage flux caused by imperfect coupling and the sudden change in primary current induce a voltage across the opening switch which exceeds the affordability of modern solid-state switches. In previous studies, a half-cycle oscillatory discharge circuit is proposed to mitigate these problems by using a capacitor to recapture the energy in the leakage flux and to slow down the turnoff of current in the primary. However, there are still some problems should be settled. For example, the output pulse cannot be adjusted, the residual energy cannot be recovered and the capacitor branch circuit may have an impact on the charging process. In the paper, a modified discharge circuit topology is introduced to solve these problems. A multi-module system comprising of several HTSPPTs charging in series connection and discharging in parallel is also designed and simulated. This system can be used to power an electromagnetic emission device.     

逆变GMAW焊机短路过渡波形控制研究

为了实现对GMAW焊短路过渡过程精确和优化控制,首先研究短路过渡不同阶段的熔滴过渡过程,在充分利用IGBT逆变GMAW焊机优异的动态响应性能的基础上,研究了多种不同的短路过渡波形控制方式,并提出一种短路燃弧状态控制法.当短路发生后,电流先保持在一较低值,然后以斜率可以调节的双折线规律上升.在燃弧阶段,调节控制回路参数,控制燃弧电流的变化速度,保证充足的燃弧能量.实验表明,采用该种控制方式的GMAW电源可以有效的减少焊接飞溅,改善工艺性能.     

新型微束等离子弧焊接电源的研制

鉴于高频电弧具有较强的自收缩作用及较好的电弧稳定性的特点 ,研制了调制型脉冲微束等离子弧电源 .本电源可通过对高频电流的低频脉冲调制调节电弧对焊缝的热输入 ,同时具有电弧能量密度大、主弧空载电压低及起始电流递增和熄弧电流递减等功能 ,适用于铜、钛、不锈钢等金属薄件、微细件的焊接 .     

Effect of various pulse wave forms for pulse-type magnetic flux pump

The excitation current of magnetic pole windings in magnetic flux pump needs to be generated by a control system. In this paper, the control system of pulse-type high temperature superconducting magnetic flux pump is discussed in detail. The control system consists of a control circuit and a drive circuit. A direct current power supply is the unique power supply of the drive circuit. The control circuit is powered by a computer through a USB interface of the computer. The control circuit receives commands from the computer and controls the drive circuit to generate different pulse waves. Each pulse wave generates a unique pulse-type traveling magnetic field and will pump magnetic flux into the superconducting loop. Experiments have been performed to examine the pumping effect of different pulse waves on both MgB₂ and Bi-2223 superconducting loops using the proposed control system, and the best pulse wave has been found. The experimental results show that the magnetic flux pump can compensate current decay up to 32.5 A for MgB₂ loop and 129 A for Bi-2223 loop. It indicates that the control system of the pulse-type magnetic flux pump is effective and feasible.     

基于模型预测的三电平PWM变流器直接功率控制

为了满足脉宽调制型变流器功率响应速度快以及绝缘栅双极型晶体管开关频率恒定等要求,提出了基于模型预测的直接功率控制策略用于三电平PWM变流器。该控制策略采用电压外环、功率内环的双闭环控制,外环省略了锁相环环节,简化了控制系统结构;内环无需PI调节器,参数设计简单,响应速度快。利用MATLAB/SIMULINK仿真平台搭建了三电平中性点箝位型PWM变流器模型,对比分析了提出的控制策略与传统PI控制的效果。仿真结果表明,新的控制策略有效降低了交流侧电流总谐波失真率,提高了交流侧功率因数,具有良好的动态和稳态性能。     

Inductive coupler for contactless power transmission

To provide power to a moving vehicle without using contacts, a transformer is presented, consisting of a fixed primary winding inductively coupled to a moving secondary winding. The primary winding along the whole trajectory of motion is configured such that its magnetic stray field and its self inductance are limited. This winding transfers power to the moving coupler containing the yoke and the secondary winding. The secondary winding is a resonant circuit, with a rectifier and the motor of the vehicle as load. To describe the energy transmission system, a numerical model is developed that combines an electrical circuit with a 2D nonlinear finite element model. This model is used for an optimisation of the design. For the optimised configuration, an experimental setup is built to validate the model by measurements. A sensitivity analysis is carried out concerning the primary current, the supply frequency, the position of the secondary winding relative to the primary winding and the number of vehicles coupled with the primary winding.     

Design and comparative study of discrete and module-based IGBT power converters

This paper discusses concepts of a 20 kVA power converter design and key differences between discrete IGBT and module-based design approaches. Module-based power converters have been typically employed in academic and research institutes for power levels of 10 kVA and more. However, with advancement in IGBT technologies and the growing need to minimize system size and weight, designs based on discrete devices are now an attractive alternative for such power levels. A simple procedure is presented for power converter design that includes power loss evaluation, heat-sink thermal characterization, thermal model of overall system and sizing of DC link capacitor. Using the same, a state-of-the-art discrete device and module-based power converters are designed. A comparison is subsequently made, where it is shown that discrete approach yields a compact and economic design up to a power level of 20 kVA. A key objective of this work is to lay emphasis on laboratory design of power converters. This enables a graduate level student to build a converter from start and in the process gain insights into the underlying engineering design aspects.