共查询到20条相似文献,搜索用时 31 毫秒
1.
Cha-Yang Chu Jitendra P. Singh Jules L. Routbort 《Journal of the American Ceramic Society》1993,76(5):1349-1353
The high-temperature flexural strength of hot-pressed silicon nitride (Si3 N4 ) and Si3 N4 -whisker-reinforced Si3 N4 -matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si3 N4 . Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si3 N4 and its whisker composites. The origin of the nonelastic failure behavior of Si3 N4 -whisker composite at 1400°C was not positively identified but several possibilities are discussed. 相似文献
2.
High-density Si3 N4 +6% CeO2 composites with 5 to 50% BN were fabricated by hot-pressing. BN remained as a discrete phase. Dielectric constants were 4 to 8 and loss tangents were 0.0008 to 0.06 for the room temperature to 1100°C range for compositions with 10 to 50% BN. Thermal-expansion values perpendicular to the hot-pressing direction were somewhat less than those of hot-pressed Si3 N4 +6% CeO2 . Flexure strengths at room temperature were considerably lower than those of hot-pressed Si3 N4 +6% CeO2 but values at 1000°, 1250°, and 1400°C in air were only slightly lower. Young's modulus values were found to decrease with increasing BN content at all temperatures. Better thermal shock resistance was found than for commercial hot-pressed Si3 N4 . 相似文献
3.
L. K. V. LOU T. E. MITCHELL A. H. HEUER 《Journal of the American Ceramic Society》1978,61(9-10):392-396
Impurity phases in commercial hot-pressed Si3 N4 were investigated using transmission electron microscopy. In addition to the dominant, β-Si3 N4 phase, small amounts of Si2 N2 O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si3 N4 grains and ∼ 30 Å thick between Si2 N2 O and β-Si3 N4 grains. 相似文献
4.
Koji Watari Kiyoshi Hirao Motohiro Toriyama Kozo Ishizaki 《Journal of the American Ceramic Society》1999,82(3):777-779
Polycrystalline Si3 N4 samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si3 N4 resulted in the formation of a large amount of ß-Si3 N4 grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si3 N4 materials were 80 and 102 Wm−1 K−1 , respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm−1 K−1 ). The calculated phonon mean free path of sintered Si3 N4 was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si3 N4 at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations. 相似文献
5.
The compressive creep behavior and oxidation resistance of an Si3 N4 /Y2 Si2 O7 material (0.85Si3 N4 +0.10SiO2 +0.05Y2 O3 ) were determined at 1400°C. Creep re sistance was superior to that of other Si3 N4 materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10−11 kg2 ·m-4 ·s−1 indicates excellent oxidation resistance. 相似文献
6.
John J. Petrovic Maria I. Pena H. Harriett Kung 《Journal of the American Ceramic Society》1997,80(5):1111-1116
Details of the fabrication and microstructures of hot-pressed MoSi2 reinforced–Si3 N4 matrix composites were investigated as a function of MoSi2 phase size and volume fraction, and amount of MgO densification aid. No reactions were observed between MoSi2 and Si3 N4 at the fabrication temperature of 1750°C. Composite microstructures varied from particle–matrix to cermet morphologies with increasing MoSi2 phase content. The MgO densification aid was present only in the Si3 N4 phase. An amorphous glassy phase was observed at the MoSi2 –Si3 N4 phase boundaries, the extent of which decreased with decreased MgO level. No general microcracking was observed in the MoSi2 –Si3 N4 composites, despite the presence of a substantial thermal expansion mismatch between the MoSi2 and Si3 N4 phases. The critical MoSi2 particle diameter for microcracking was calculated to be 3 μm. MoSi2 particles as large as 20 μm resulted in no composite microcracking; this indicated that significant stress relief occurred in these composites, probably because of plastic deformation of the MoSi2 phase. 相似文献
7.
F. F. LANGE S. C. SINGHAL R. C. KUZNICKI 《Journal of the American Ceramic Society》1977,60(5-6):249-252
Composite powders were hot-pressed to determine the phase relations in the Si3 N4 -SiO2 -Y2 O3 pseudoternary system. Four quaternary compounds, Si3 Y2 O3 N4 , YSiO2 N, Y10 Si7 O23 N4 , and Y4 Si2 O7 N2 , were identified. Studies of polyphase and single-phase materials in this system showed that these 4 compounds are unstable under oxidizing conditions. Materials within the Si3 N4 -Si2 N2 O-Y2 Si2 O7 compatibility triangle precluded the unstable compounds, and are extremely resistant to oxidation. 相似文献
8.
The rate of dissolution of β-Si3 N4 into an Mg-Si-O-N glass was measured by working with a composition in the ternary system Si3 N4 -SiO2 -MgO such that Si2 N2 O rather than β-Si3 N4 was the equilibrium phase. Dissolution was driven by the chemical reaction Si3 N4 (c)+SiO2 ( l )→Si2 N2 O(c). Analysis of the kinetic data, in view of the morphology of the dissolving phase (Si3 N4 ) and the precipitating phase (Si2 N2 O), led to the conclusion that the dissolution rate was controlled by reaction at the crystal/glass interface of the Si3 N4 , crystals. The process appears to have a fairly constant activation energy, equal to 621 ±40 kJ-mol−1 , at T=1573 to 1723 K. This large activation energy is believed to reflect the sum of two quantities: the heat of solution of β-Si3 N4 hi the glass and the activation enthalpy for jumps of the slower-moving species across the crystal/glass interface. The data reported should be useful for interpreting creep and densification experiments with MgO-fluxed Si3 N4 . 相似文献
9.
Juergen Heinrich Eberhard Backer Manfred Böhmer 《Journal of the American Ceramic Society》1988,71(1):28-C-
Hot isostatically pressed silicon nitride was produced by densifying Si3 N4 powder compacts and reaction-bonded Si3 N4 (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si3 N4 starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase. 相似文献
10.
Detailed microstructural analysis of a 10 mol% Y2 O3 fluxed hot-pressed silicon nitride reveals that, in addition to the yttrium-silicon oxynitride phase located at the multiple Si3 N4 grain junctions, there is a thin boundary phase 10 to 80 Å wide separating the silicon nitride and the oxynitride grains. Also, X-ray microanalysis from regions as small as 200 Å across demonstrates that the yttrium-silicon oxynitride, Y2 Si(Si2 O3 N4 ), phase can accommodate appreciable quantities of Ti, W, Fe, Ni, Co, Ca, Mg, Al, and Zn in solid solution. This finding, together with observations of highly prismatic Si3 N4 grains enveloped by Y2 Si(Si2 O3 N4 ), suggests that densification occurred by a liquid-phase "solution-reprecipitation" process. 相似文献
11.
F. F. LANGE 《Journal of the American Ceramic Society》1973,56(10):518-522
A fracture mechanics approach was used to investigate the high strength of hot-pressed Si3 N4 . Room-temperature flexural strengths, fracture energies, and elastic moduli were determined for material fabricated from α- and β-phase Si3 N4 powders. When the proper powder preparation technique was used, α-phase powder resulted in a high fracture energy (69,000 ergs/cm2 ), a high flexural strength (95,000 psi), and an elongated (fiberlike) grain morphology, whereas β-phase powder produced a low fracture energy (16,000 ergs/cm2 ), a relatively low strength (55,000 psi), and an equiaxed grain morphology. It was hypothesized that the high strength of Si3 N4 hot-pressed from α-phase powder results from its high fracture energy, which is attributed to the elongated grains. High-strength Si3 N4 has directional properties caused, in part, by the elongated grain structure, which is oriented preferentially with respect to the hot-pressing direction. 相似文献
12.
John J. Petrovic Maria I. Pena Ivar E. Reimanis Michael S. Sandlin Samuel D. Conzone H. Harriet Kung Darryl P. Butt 《Journal of the American Ceramic Society》1997,80(12):3070-3076
The mechanical behavior of MoSi2 reinforced–Si3 N4 matrix composites was investigated as a function of MoSi2 phase content, MoSi2 phase size, and amount of MgO densification aid for the Si3 N4 phase. Coarse-phase MoSi2 -Si3 N4 composites exhibited higher room-temperature fracture toughness than fine-phase composites, reaching values >8 MP·am1/2 . Composite fracture toughness levels increased at elevated temperature. Fine-phase composites were stronger and more creep resistant than coarse phase composites. Room-temperature strengths >1000 MPa and impression creep rates of ∼10−8 s−1 at 1200°C were observed. Increased MgO levels generally were deleterious to MoSi2 -Si3 N4 mechanical properties. Internal stresses due to MoSi2 and Si3 N4 thermal expansion coefficient mismatch appeared to contribute to fracture toughening in MoSi2 -Si3 N4 composites. 相似文献
13.
The effects of fabrication variables on the high-temperature strength of hot-pressed Si3 N4 containing 5 wt% Y2 O3 were studied. Materials containing a crystalline grain-boundary phase, formed as a consequence of a high-temperature presintering heat treatment and identified as Si3 N4 ·Y2 O3 , had high-temperature strengths significantly superior to those observed for materials containing a glass phase. 相似文献
14.
Jow-Lay Huang Hung-Liang Chiu Ming-Tung Lee 《Journal of the American Ceramic Society》1994,77(3):705-710
The effects of TiC addition to Si3 N4 on microstructure and the chemical aspects of Si3 N4 –TiC interphase reaction were investigated in samples hot-pressed at 1800°C in Ar and N2 . Composition of a TiC1–x Nx solid solution was predicted based on thermodynamic calculation, with titanium carbonitride taken to be an ideal solid solution. The predicted value of x = 0.7 is slightly higher than that derived from the measured lattice parameter and Vegard's law (x = 0.67). Four distinguishable areas were observed in samples hot-pressed in nitrogen atmosphere. They were identified as β-Si3 N4 , mixtures of TiC and titanium carbonitride solid solution, SiC with twins, and iron silicide. As the duration of hot-pressing increased, more titanium carbonitride was formed, while less TiC phase remained. Thermodymanic calculations indicate one source of nitrogen gas came from the decomposition of Si3 N4 . The TiC particles also became more irregular, and reactants were found inside or between TiC as the hot-pressing time was extended. Silicon carbide was not detected in samples which were hot-pressed in argon atmosphere; however, numerous pores were found around TiC. 相似文献
15.
Sintering studies of Si3 N4-Y2 O3/Al2 O3 compositions indicated that increased densification could be produced using a dual N2 pressure process. RT modulus of rupture values and microstructures were found to be similar to hot-pressed material. The technique should be adaptable to complex shaped Si3 N4 bodies where high density and strength are required . 相似文献
16.
The phase relations in the Si3 N4 -rich portion of the Si3 N4 –AlN–Y2 O3 rystem were investigated using hot-pressed bodies. The one-phase fields of β3 and α, the twophase fields of β+α, β+M (M=melilite), and α+M, and the three-phase fields of β+α+M were observed in the Si3 N4 -rich portion. The α- and β-sialons are not two different compounds but an allotropic transformation phase of the Si–Al–O–N system, and an α solid solution expands and stabilizes with increasing Y2 O3 content. Therefore, the formulas of the two sialons should be the same. 相似文献
17.
J. J. PETROVIC L. A. JACOBSON P. K. TALTY A. K. VASUDEVAN 《Journal of the American Ceramic Society》1975,58(3-4):113-116
Surface flaws of controlled size and shape were produced in high-strength hot-pressed Si3 N4 with a Knoop microhardness indenter. Fracture was initiated at a single suitably oriented flaw on the tensile surface of a 4-point-bend specimen, with attendant reduction in the measured magnitude and scatter of the fracture strength. The stress required to propagate the controlled flaw was used to calculate the critical stress-intensity factor, K IC , from standard fracture-mechanics formulas for semielliptical surface flaws in bending. After the bend specimen had been annealed, the room-temperature K IC values for HS-130 Si3 N4 increased to a level consistent with values obtained from conventional fracture-mechanics tests. It was postulated that annealing reduces the residual stresses produced by the microhardness indentation. The presence of residual stresses may account for the low K IC , values. Elevated-temperature KIC values for HS-130 Si3 N4 were consistent with double-torsion data. Controlled flaws in HS-130 Si3 N4 exhibited slow crack growth at high temperatures. 相似文献
18.
Linus U. J. T. Ogbuji 《Journal of the American Ceramic Society》1992,75(11):2995-3000
The results of two-step oxidation experiments on chemically-vapor-deposited Si3 N4 and SiC at 1350°C show that a correlation exists between the presence of a Si2 N2 O interphase and the strong oxidation resistance of Si3 N4 . During normal oxidation, k p for SiC was 15 times higher than that for Si3 N4 , and the oxide scale on Si3 N4 was found by SEM and TEM to contain a prominent Si2 N2 O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k p increases over 55-fold for Si3 N4 , and 3.5-fold for SiC; the Si3 N4 and SiC oxidize with nearly equal k p 's; and, most significant, the oxide scale on Si3 N4 is found to be lacking an inner Si2 N2 O layer. The implications of this correlation for the competing models of Si3 N4 oxidation are discussed. 相似文献
19.
C. Greskovich 《Journal of the American Ceramic Society》1981,64(2):31-C-
The development of microstructure in hot-pressed Sia N4 was studiehd for a typical Si3 N4 powder with and without BeSiN2 as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si3 N4 conversion and specific surface area showed that BeSiN2 appears to increase the mobility of the system by enhancing densification, α- to β-Si3 N4 transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase. 相似文献
20.
IRVIN C. HUSEBY† HANS L. LUKAS GÜNTER PETZOW 《Journal of the American Ceramic Society》1975,58(9-10):377-380
The 1780°C isothermal section of the reciprocal quasiternary system Si3 N4 -SiO2 -BeO-Be3 N2 was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be6 Si3 N8 , Be11 Si5 N14 , Be5 Si2 N6 , Be9 Si3 N10 , Be8 SiO4 N4 , Be6 O3 N2 , Be8 O5 N2 , and Be9 O6 N2 . Large solid solubility occurs in β-Si3 N4 , BeSiN2 , Be9 Si3 N10 , Be4 SiN4 , and β-Be3 N2 . Solid solubility in β-Si3 N4 extends toward Be2 SiO4 and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be2 SiO4 at 1880°C. A 4-phase isotherm, liquid +β-Si3 N4 ( ss )Si2 ON2 + BeO, exists at 1770°C. 相似文献