共查询到20条相似文献,搜索用时 31 毫秒
1.
X. L. Xu V. Misra M. C. Öztürk J. J. Wortman G. S. Harris D. M. Maher L. Spanos E. A. Irene 《Journal of Electronic Materials》1993,22(11):1345-1351
An oxygen doped microcrystalline silicon (μc-Si) deposition process is developed by mixing small amounts of nitrous oxide
(N2O) with silane (SiH4) in a rapid thermal chemical vapor deposition (RTCVD) reactor. The effects of oxygen doping on the properties of RTCVD μc-Si
films are studied. Experimental results show that the RTCVD process provides high deposition rates for μc-Si and polycrystalline
silicon (polySi) films at elevated deposition temperatures and pressures. The surface roughness of the RTCVD μc-Si films can
be significantly reduced compared to that of conventional LPCVD polySi films. Steep side walls can be realized due to the
small grain size of the μc-Si films. The sheet resistance of BF2 doped μc-Si films is slightly higher than that of BF2 doped polySi films, whereas sheet resistances of P and As doped μc-Si films are much higher than those of the corresponding
P and As doped polySi films. Measurements of the catastrophic breakdown strength of metal-oxide-semiconductor (MOS) capacitors
indicate that the quality of gate electrodes fabricated using μc-Si is improved relative to that of MOS capacitors fabricated
using polySi gate electrodes. 相似文献
2.
P. Tiwari X. D. Wu S. R. Foltyn I. H. Campbell Q. X. Jia R. E. Muenchausen D. E. Peterson T. E. Mitchell 《Journal of Electronic Materials》1996,25(1):51-55
Highly crystalline SrRuO3 (SRO) and La0.5Sr0.5CoO3 (LSCO) thin films were deposited on (100) Pt/ MgO by pulsed laser deposition. The films were mainly (001) textured normal
to the substrate surface with a high degree of in-plane orientation with respect to the substrate’s major axes. These films
were characterized using x-ray diffraction, Rutherford backscattering, four-point probe resistivity measurement, and transmission
electron microscopy. The room temperature resistivity for LSCO and SRO films on Pt/MgO was found to be ∼35 and ∼40 μΩ-cm,
respectively. An ion beam minimum channeling yield of ∼43% and ∼33% was obtained for LSCO and SRO films, respectively. The
interface between Pt and oxide was found to be smooth and free from any interfacial diffusion. This result showed that high-quality
low resistivity oxide thin films can be deposited on Pt. 相似文献
3.
Byung Lyul Park Dae-Hong Ko Young Sun Kim Jung Min Ha Young Wook Park Sang In Lee Hyeon-Deok Lee Myoung Bum Lee U. In Chung Young Bum Koh Moon Yong Lee 《Journal of Electronic Materials》1997,26(2):L1-L5
We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier
material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure,
which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow ratio of 1 is about 160 μω-cm, which decreases to 50 μω-cm after an rapid thermal annealing treatment at 800°C.
In the contact holes with the size of 0.35 μm and aspect ratio of 3.5, the bottom step coverage of the tungsten nitride films
is about 60%, which is about three times higher than that of collimated-TiN films. We obtained contact resistance and leakage
current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. The contact resistance
and leakage current are stable upon thermal stressing at 450°C up to 48 h. 相似文献
4.
J. Irby D. Kinosky T. Hsu R. Qian A. Mahajan S. Thomas B. Anthony S. Banerjee A. Tasch C. Magee 《Journal of Electronic Materials》1992,21(5):543-547
In situ boron doping of Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition (RPCVD) has been studied
using secondary ion mass spectroscopy (SIMS), Hall effect measurements, defect etching in conjunction with Nomarski microscopy,
cross-sectional transmission electron microscopy (XTEM), and current-voltage measurements. Boron incorporation is shown to
be controllable and electrically active from 7 × 1017 to over 1020 cm-3, with no dependence on process parameters (temperature, rf power, and substrate bias) in the ranges studied, other than the
B2H6/SiH4 gas-phase ratio. No change in deposition rate upon introduction of B2H6 dopant gas is seen, contrary to what has been observed in several higher-temperature CVD processes. No defects such as stacking
faults are seen under Nomarski microscopy, but a visible haze covers some areas ofin situ B-doped wafers. This haze appears to consist of amorphous cone-shaped structures with their apexes at the substrate-epilayer
interface. The origin of the conical defects is believed to be related to some phenomenon at the initiation of growth. In
order to evaluate the electrical quality ofin situ B-doped epilayers,P
+/N mesa diodes have been fabricated using both homoepitaxial and heteroepitaxial (GexSi1-x)p-type epitaxial films. The electrical junction in these diodes coincides with the (epi-substrate)—interface in the grown films.
To avoid interdiffusion or annealing effects during diode fabrication, all processing temperatures were kept at or below 450‡
C. Ideality factors are 1.2-1.3 for all diodes, indicating diffusion-limited transport rather than recombination in the depletion
region. 相似文献
5.
Li-Wen Lai Hsin-Ying Lee Jun-Hung Cheng Ching-Ting Lee 《Journal of Electronic Materials》2008,37(2):167-171
SiGe films deposited by conventional plasma-enhanced chemical vapor deposition (PECVD) were compared with microcrystalline
SiGe (μc-SiGe) films deposited at a low temperature using a laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD).
In the LAPECVD system, a CO2 laser was used to assist the pyrolytic decomposition of SiH4 and GeH4 reactant gases. The μc-SiGe structure was identified using electron diffraction patterns from high-resolution transmission
electron microscopy images. Microcrystalline SiGe films were analyzed using various measurements. 相似文献
6.
O. Akpa S. Shoieb T. Thompson T. Isaacs-Smith P. Anderson S. Seraphin K. Das 《Journal of Electronic Materials》2010,39(11):2462-2466
Films of CuInSe2 (CIS) and CuGaSe2 (CGS) were deposited on (100) Si by radiofrequency (RF) magnetron sputtering from stoichiometric CIS and CGS targets. Rutherford
backscattering (RBS) analysis yielded a composition of Cu0.8In1.1Se1.9 for CuInSe2, which indicates that these films were Cu and Se poor. A composition of Cu0.3Ga1.5Se2.0 for CuGaSe2 shows Ga-rich and Cu-poor layers. Transmission electron microscopy (TEM) of cross-sectional samples established that the
films were polycrystalline in nature and free of pinhole defects that normally short-circuit devices fabricated on glass with
submicron absorber layers. From the electron and x-ray diffraction patterns, tetragonal chalcopyrite phases of the material
were identified. Circular diodes, with a diameter between 100 μm and 400 μm, were fabricated on the grown films with a common Au back-contact. Diodes on both CIS and CGS films exhibited rectifying
characteristics. From the polarity corresponding to the high and low currents, it was inferred that the grown films were p-type. These diodes exhibited photovoltaic response, and the forward-bias current increased by as much as two orders of magnitude
when illuminated by a 75-W halogen lamp. The open-circuit voltages (V
OC) for these devices are expected to approach the turn-on voltage of the diodes, 0.5 V and 0.7 V, for the CGS/Si and the CIS/Si
heterojunctions, respectively. Shunting caused by degenerate phases present in the CGS film is believed to have resulted in
the observed lower turn-on voltage for the CGS/n-Si heterojunction diode. 相似文献
7.
N. H. Karam R. Sudharsanan T. Parodos M. A. Dodd 《Journal of Electronic Materials》1996,25(8):1209-1214
Epitaxial In1-xTlxSb films with compositions up to x = 0.1 have been demonstrated using the metalorganic chemical vapor deposition technique
on InSb and GaAs substrates. A specially designed high-temperature source delivery system was used for the low vapor pressure
cyclopentadienylthallium source. Tl-compositions in the deposited films were measured by Rutherford backscattering spectroscopy
which confirmed the incorporation of up to 10% Tl. Room temperature infrared transmission spectra of InTISb exhibited considerable
absorption beyond 7 μm. Photoconductive detectors were fabricated in InTISb films grown on semi-insulating GaAs. Spectral
response measurements showed substantial photoresponse at 8.5 to 14 μm. In spite of the large lattice-mismatch (≈14%) between
InTISb and GaAs, photoconductive detectors exhibited black-body detectivities (D*
bb) of 5.0 × 108 cm-Hz1/2W−1 at 40K. 相似文献
8.
Aluminum oxide films (amorphous and γ-Al2O3) have been deposited by the oxidation of trimethy1aluminum. Process parameters have been evaluated and optimized to obtain
reasonable growth rates and film properties for deposition temperatures between 300 and 400° C. Values of the dielectric constant
(7.5 – 7.8), the dielectric strength (7.5 – 7.9 × 106 V/cm), the index of refraction (1.54 – 1.67), and the resistivity (> 10 ohm-cm) compare favorably with Al2O3, films grown with other processes at higher deposition temperatures. Film analysis by secondary ion mass spectrometry identified
a distribution of carbon and sodium impurities. 相似文献
9.
J.S. Fang J.H. Lin B.Y. Chen G.S. Chen T.S. Chin 《Journal of Electronic Materials》2012,41(1):138-143
Ru-Ta-C films deposited on silicon substrates were evaluated as barriers for copper metalization. The films were prepared
by magnetron cosputtering using a Ru target and a Ta-C target. Compositions and structure of resultant films were optimally
tuned by the respective deposition power of each target. The fabricated Ru-Ta-C films were characterized via four-point probe
measurement, x-ray diffractometry, field-emission electron probe microanalysis, and transmission electron microscopy. Failure
temperature was evaluated by the sudden rise in electrical resistivity after annealing the Cu/Ru-Ta-C/Si sandwich films, and
a reference bilayer Cu/(5 nm Ru)/(5 nm Ta-C)/Si scheme. The optimal compositions were 10 nm Ru77Ta15C7 and (5 nm Ru)/(5 nm Ta-C), both of which showed failure temperature of 650°C for 30 min and electrical resistivity less than
150 μΩ cm. Because of their high thermal stability and low electrical resistivity, both Ru-Ta-C and Ru/Ta-C films are promising
barriers for Cu metalization. 相似文献
10.
Nanocrystalline diamond (NCD) films were produced by microwave plasma-enhanced chemical vapor deposition (MPECVD) using gas
mixtures of Ar, H2, and CH4. The structural properties, electron emission, and electric discharge behaviors of the NCD films varied with H2 flow rates during MPECVD. The turn-on field for electron emission at a pressure of 2.66 × 10−4 Pa increased from 4.2 V μm−1 for the NCD films that were deposited using a H2 flow rate of 10 cm3 min−1 to 7 V μm−1 for films deposited at a H2 flow rate of 20 cm3 min−1. The NCD film with a low turn-on field also induced low breakdown voltages in N2. The grain size and roughness of the NCD films may influence both the electron emission and the electric discharge behaviors
of the NCD cathodes. 相似文献
11.
Pulsed laser deposition and processing of wide band gap semiconductors and related materials 总被引:1,自引:0,他引:1
R. D. Vispute S. Choopun R. Enck A. Patel V. Talyansky R. P. Sharma T. Venkatesan W. L. Sarney L. Salamancariba S. N. Andronescu A. A. Iliadis K. A. Jones 《Journal of Electronic Materials》1999,28(3):275-286
The present work describes the novel, relatively simple, and efficient technique of pulsed laser deposition for rapid prototyping
of thin films and multi-layer heterostructures of wide band gap semiconductors and related materials. In this method, a KrF
pulsed excimer laser is used for ablation of polycrystalline, stoichiometric targets of wide band gap materials. Upon laser
absorption by the target surface, a strong plasm a plume is produced which then condenses onto the substrate, kept at a suitable
distance from the target surface. We have optimized the processing parameters such as laser fluence, substrate temperature,
background gas pressure, target to substrate distance, and pulse repetition rate for the growth of high quality crstalline
thin films and heterostructures. The films have been characterized by x-ray diffraction, Rutherford backscattering and ion
channeling spectrometry, high resolution transmission electron microscopy, atomic force microscopy, ultraviolet (UV)-visible
spectroscopy, cathodoluminescence, and electrical transport measurements. We show that high quality AlN and GaN thin films
can be grown by pulsed laser deposition at relatively lower substrate temperatures (750–800°C) than those employed in metal
organic chemical vapor deposition (MOCVD), (1000–1100°C), an alternative growth method. The pulsed laser deposited GaN films
(∼0.5 μm thick), grown on AlN buffered sapphire (0001), shows an x-ray diffraction rocking curve full width at half maximum
(FWHM) of 5–7 arc-min. The ion channeling minimum yield in the surface region for AlN and GaN is ∼3%, indicating a high degree
of crystallinity. The optical band gap for AlN and GaN is found to be 6.2 and 3.4 eV, respectively. These epitaxial films
are shiny, and the surface root mean square roughness is ∼5–15 nm. The electrical resistivity of the GaN films is in the range
of 10−2–102 Θ-cm with a mobility in excess of 80 cm2V−1s−1 and a carrier concentration of 1017–1019 cm−3, depending upon the buffer layers and growth conditions. We have also demonstrated the application of the pulsed laser deposition
technique for integration of technologically important materials with the III–V nitrides. The examples include pulsed laser
deposition of ZnO/GaN heterostructures for UV-blue lasers and epitaxial growth of TiN on GaN and SiC for low resistance ohmic
contact metallization. Employing the pulsed laser, we also demonstrate a dry etching process for GaN and AlN films. 相似文献
12.
P. Tiwari Mary Longo G. Matera S. Sharan P. L. Smith J. Narayan 《Journal of Electronic Materials》1991,20(7):775-778
We have investigated the formation of TiSi2 and CoSi2 thin films on Si(100) substrates using laser (wave length 248 nm, pulse duration 40 ns and repetition rate 5 Hz) physical
vapor deposition (LPVD). The films were deposited from solid targets of TiSi2 and CoSi2 in vacuum with the substrate temperature optimized at 600° C. The films were characterized using x-ray diffraction, scanning
electron microscopy (SEM), transmission electron microscopy (TEM) and four point probe ac resistivity. The films were found
to be polycrystalline with a texture. The room temperature resistivity was found to be 16 μΩ-@#@ cm and 23 μΩ-cm for TiSi2 and CoSi2 films, respectively. We optimized the processing parameters so as to get particulate free surface. TEM results show that
the silicide/silicon interface is quite smooth and there is no perceptible interdiffusion across the interface. 相似文献
13.
Q. Xu J. W. P. Hsu E. A. Fitzgerald J. M. Kuo Y. H. Xie P. J. Silverman 《Journal of Electronic Materials》1996,25(6):1009-1013
The surface morphology of GaAs films grown on Ge substrates is studied by scanning force microscopy. We find a dramatic difference
arising from Ga as opposed to As prelayers in the formation of anti-phase boundaries (APBs), surface features near threading
dislocations, and surface roughness, for films as thick as 1 μm. Ga prelayer samples are smooth; thin films display some APBs
with predominantly one growth domain while the 1 μm thick film displays the morphology of a homoepitaxial GaAs film. In contrast,
As prelayer samples are rough with complicated APB structures, which can be attributed to the increase in single steps during
As2 deposition. 相似文献
14.
The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following
deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below
350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional
to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very
reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline
CrSi2 for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi2 was ≈600 μΩ·cm and independent of annealing temperature. 相似文献
15.
C. Navone M. Soulier M. Plissonnier A. L. Seiler 《Journal of Electronic Materials》2010,39(9):1755-1759
In major applications, optimal power will be achieved when thermoelectric films are at least 100 μm thick. In this paper we demonstrate that screen-printing is an ideal method to deposit around 100 μm of (Bi,Sb)2(Te,Se)3-based films on a rigid or flexible substrate with high Seebeck coefficient value (90 μV K−1 to 160 μV K−1) using a low-temperature process. Conductive films have been obtained after laser annealing and led to acceptable thermoelectric
performance with a power factor of 0.06 μW K−2 cm−1. While these initial material properties are not at the level of bulk materials, the complete manufacturing process is cost-effective,
compatible with large surfaces, and affords a mass-production technique. 相似文献
16.
Mark R. Davidson Balu Pathangey Paul H. Holloway Philip D. Rack S. S. Sun C. N. King 《Journal of Electronic Materials》1997,26(11):1355-1360
Thin film electroluminescent (TFEL) phosphors for flat panel displays have been produced by several different growth methods
including atomic layer epitaxy, chemical vapor deposition, and sputter deposition. There is a great deal of interest in sputter
deposition due to the extensive knowledge base and equipment from other existing thin film manufacturing. However, deposition
of sulfide-based TFEL phosphors by conventional radio frequency magnetron sputtering has proven to be difficult due to the
formation of negative sulfur ions near the target which are accelerated to the growing film by the self-bias developed on
the target. This negative-ion resputtering can result in amorphization or re-sputtering of the phosphor films. In severe cases,
a net sputtering of the substrate can result. In order to remedy this negative ion resputtering problem, modifications of
the magnetron geometry and ion-beam sputtering have been evaluated for production of CaxSr1−xGa2S4:Ce and SrS:Ce TFEL phosphors. Sputter deposited TFEL films also typically require a postdeposition anneal which adds to expense
and can cause other problems for the flat panel display. Ion-beam assist during deposition of undoped ZnS was studied as a
method to induce surface-atom mobility and a more crystalline as-deposited film for use in monochrome TFEL displays. 相似文献
17.
Thin films of the solid solutions CuIn(TexSe1−x
)2 (0<x<1) exhibiting chalcopyrite structure were obtained by the method of laser deposition. Using half-transmitting indium layers,
Schottky diodes were prepared on the basis of the films obtained. The spectral dependence of the sensitivity as a function
of the ratio between Te and Se was investigated by illuminating the structures through the In contact. Analysis of the experimental
results showed that the region of spectral sensitivity of such thin-film structures depends on the tellurium content in the
CuIn(TexSe1−x
)2 layers.
Fiz. Tekh. Poluprovodn. 32, 458–460 (April 1998) 相似文献
18.
Grebenshchikova E. A. Imenkov A. N. Kizhaev S. S. Golovin A. S. Yakovlev Yu. P. 《Semiconductors》2012,46(2):236-240
A series of light-emitting diodes (LEDs) (emission peak wavelength λmax = 3.6 μm) with cone-shaped mesas, which have concave lateral surfaces and heights between 10 to 130 μm, has been developed.
The dependence of the emission efficiency for these LEDs on mesa height has been studied at different injection currents at
the temperatures 77 and 298 K. The form of the dependence observed is in agreement with the results of theoretical calculations.
It is shown that the effective absorption coefficient, caused by emission extraction from the crystal, may be as large as
3 cm−1 for LEDs with the highest mesa (130 μm) among the diodes in this series. The emission extraction coefficient is close to
30% at the temperature 298 K and 94% at 77 K. 相似文献
19.
We report deposition of (GaAs)1_x(Ge2)x on GaAs substrates over the entire alloy range. Growth was performed by metalorganic chemical vapor deposition at temperatures
of 675 to 750°C, at 50 and 760 Torr, using trimethylgallium, arsine, and germane at rates of 2–10 μ/h. Extrinsic doping was
achieved using silane and dimethylzinc in hydrogen. Characterization methods include double-crystal x-ray rocking curve analysis,
Auger electron spectroscopy, 5K photoluminescence, optical transmission spectra, Hall-effect, and Polaron profiling. Results
achieved include an x-ray rocking curve full-width at half maximum as narrow as 12 arc-s, Auger compositions spanning the
alloy range from x = 0.03 to x = 0.94, specular surface morphologies, and 5K photoluminescence to wavelengths as long as 1620
nm. Undoped films are n type, with n ≈ 1 × 1017 cm−3. Extrinsic doping with silane and dimethylzinc have resulted in films which are n type (1017 to 1018 cnr−3) or p type (5 × 1018 to 1 × 1020 cm−3). Mobilities are generally ≈ 50 cm2/V-s and 500 cm2/V-s, for p and n films, respectively. 相似文献
20.
Alain E. Kaloyeros Aiguo Feng Jonathan Garhart Kenneth C. Brooks Sumanta K. Ghosh Arjun N. Saxena Fred Luehrs 《Journal of Electronic Materials》1990,19(3):271-276
Copper films for potential use in multilevel metallization in ULSIC’s were produced by low temperature (250–350° C) metal-organic
chemical vapor deposition (LTMOCVD) in atmospheres of pure H2 or mixture Ar/H2 from the β-diketonate precursor bis(1,1,1,5,5,5-hexafluoroacetylacetonato) copper(ll), Cu(hfa)2. The films were analyzed by x-ray diffraction (XRD), Rutherford backscattering (RBS), Auger electron spectroscopy (AES),
scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDXS). The results of these studies showed that
the films were uniform, continuous, adherent and highly pure—oxygen and carbon contents were below the detection limits of
AES. Four point resistivity measurements showed that the copper films had very low resistivity, as low as 1.9 μΩcm for the
films deposited in pure hydrogen atmosphere. Our preliminary results seem to indicate that LTMOCVD is a very attractive technique
for copper multilevel metallizations. 相似文献