Characterization of CuInSe2/CdS thin-film solar cells prepared using CBD

CuInSe₂/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J−V characteristics of the devices prepared with different thicknesses of CdS and CuInSe₂ were studied. The typical solar cell parameters obtained for the best cell are: V_oc = 365 mV, J_sc = 12 mA/cm², FF = 61%, and η = 3.1% under an illumination of 85 mW/cm² on a cell of active area 0.1 cm². The J−V and C−V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7.     

Influence of electrolytes on the photovoltaic performance of organic dye-sensitized nanocrystalline TiO2 solar cells

We have studied the influence of electrolytes on the photovoltaic performance of mercurochrome-sensitized nanocrystalline TiO₂ solar cells using LiI, LiBr, and tetraalkylammonium iodides as the electrolyte. Short-circuit photocurrent density (J_sc) and open-circuit photovoltage (V_oc) depended strongly on the electrolyte. J_sc of 3.42 mA cm⁻² and V_oc of 0.52 V were obtained for the LiI electrolyte and J_sc of 2.10 mA cm⁻² and V_oc of 0.86 V were obtained for the Pr₄NI electrolyte. This difference in photovoltaic performance was due to the change in the conduction band level of the TiO₂ electrode. Large V_oc of 0.99 V was obtained for the LiBr electrolyte due to the large energy gap between the conduction band level of TiO₂ and the Br/Br₂ redox potential. Solar cell performance also depended strongly on organic solvent, suggesting that the physical properties of solvents such as Li ion conductivity and donor number affect photovoltaic performance.     

Photovoltaic effect in single-layer organic solar cell devices fabricated with two new imidazolin-5-one molecules

Organic solar cells were fabricated with two new imidazolin-5-one molecules as active layers. The use of imidazolin-5-ones, derivatives of a biomolecule chromophore, for photovoltaic applications is particularly attractive due to its biodegradable nature and tunable properties. Single-layer devices with two analogues of imidazolin-5-ones were prepared and characterized. Devices fabricated with one of the molecules as the active layer showed a maximum J_sc of 0.52 μA cm⁻² and V_oc of 0.68 V at an incident power of 20.32 mW cm⁻², while the other set of devices showed a maximum J_sc of 0.63 μA cm⁻² and V_oc of 0.57 V at the same incident power.     

Blue sensitizers for solar cells: Natural dyes from Calafate and Jaboticaba

Blue-violet anthocyanins from Jaboticaba (Myrtus cauliflora Mart) and Calafate (Berberies buxifolia Lam) were employed as TiO₂ dye-sensitizers. Solar cells sensitized by Jaboticaba extracts achieved up to J_sc=9.0 mA cm⁻², V_oc=0.59 V, P_max=1.9 mW cm⁻² and ff=0.54, while for Calafate sensitized cells the values determined were up to J_sc=6.2 mA cm⁻², V_oc=0.47 V, P_max=1.1 mW cm⁻² and ff=0.36. Other natural dyes were evaluated without significant photocurrent, demonstrating that only selected extracts are capable of converting sunlight in electricity. The results obtained with extracts of Jaboticaba and Calafate show a successful conversion of visible light into electricity by using natural dyes as wide band-gap semiconductor sensitizers in dye-sensitized solar cells. It also represents an environmentally friendly alternative for dye-sensitized solar cells with low cost production and an excellent system for educational purposes.     

Performance of p-type silicon-oxide windows in amorphous silicon solar cell

a-SiO_x films have been prepared using silane and pure oxygen as reactive gases in plasma CVD system. Diborane was introduced as a doping gas to obtain p-type conduction silicon oxide. Infrared absorption spectra show the incorporation of Si–O stretch mode around 1000 cm⁻¹. The optical bandgap increases with the oxygen to silane gas ratio, while the electrical conductivity decreases. Hydrogenated amorphous silicon solar cells have been fabricated using p-type a-SiO_x with around 1.85 eV optical bandgap and conductivity greater than 10⁻⁷ S/cm. The measured current–voltage characteristics of the solar cells under 100 mW/cm² artificial light are V_oc=0.84 V, J_sc=14.7 mA/cm², FF=0.635 with a conversion efficiency of 7.84%.     

Effect of a redox electrolyte in mixed solvents on the photovoltaic performance of a dye-sensitized solar cell

The effect of the iodide/triiodide redox electrolyte in various organic solvents on the photoelectrochemical properties of bis(tetrabutylammonium) cis-bis(thiocyanato)bis(4-carboxy-2,2′-bipyridine-4′-carboxylato)ruthenium(II)-sensitized nanocrystalline TiO₂ solar cells was studied. Solvents with large donor numbers dramatically enhanced the open-circuit voltage (V_oc), but usually reduced the short-circuit photocurrent density (J_sc). For a mixed solvent of tetrahydrofuran (THF) and acetonitrile, V_oc increased and the fill factor decreased with increasing THF concentration, but J_sc remained relatively constant. As the partial charge of the N or O atom of the solvent molecule increased, V_oc increased, but J_sc was unchanged up to a certain value of the partial charge (for THF, −0.46). For cells using 0.3 M 4-tert-butylpyridine and 20 vol% THF in the electrolyte, a short-circuit photocurrent density of 18.23 mA cm⁻², an open-circuit voltage of 0.73 V, a fill factor of 0.73, and an overall conversion efficiency of 9.74% were obtained.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique

CdS/CdTe solar cells have been prepared by periodic pulse electrodepositionmethod. 10.8% efficient cell was made with open circuit voltage (V_oc)≈753mV, short-circuit current (J_sc)≈23.6 mA/cm² and fill factor (FF)≈0.61. Current-voltage-temperature measurments showed the variation of ideality factor (A) from 1.88 at 344 K to 4.49 at 202 K whereas voltage factor (α) was almost constant above 276 K. The junction transport is possibly dominated by a tunneling mechanism. Capacitance measurements gave the value of diffusion potential as 1.2 eV, ionized charged density as 5.9 × 10¹⁵ cm⁻³ and number of interface states (N_IS) as 2.8 × 10¹¹ cm⁻² eV⁻¹ at zero volt bias. Measurements of open circuit voltage (V_oc) with temperature gave the value of barrier height as 1.42 eV.     

High-efficiency CIGS solar cells with modified CIGS surface

CIGS films were treated in In–S aqueous solution for high-efficiency CIGS solar cells. The In–S aqueous solution contained InCl₃ and CH₃CSNH₂ (thioacetamide). The In–S treatment modified the CIGS surface favorably for high-efficiency CIGS solar cells as evidenced by the increase in V_oc, J_sc and FF. The In–S treatment formed thin CuInS₂ layer on the CIGS surface which contributes to the high efficiency and stable performance of the CIGS solar cell. The best cell showed an efficiency of 17.6% (V_oc=0.649 V, J_sc=36.1 mA/cm² and FF=75.1%) without any annealing and light soaking before I–V measurement.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.     

Photosensitization of nanocrystalline TiO2 films by a polymer with two carboxylic groups, poly (3-thiophenemalonic acid)

Photovoltaic devices were assembled using a conducting polymer; poly (3-thiophenemalonic acid) sensitized TiO₂ electrodes and an electrolyte containing I₃⁻/I⁻ redox couple. This cell exhibited a short-circuit photocurrent (J_sc) of 6.65 mA cm⁻², an open circuit voltage (V_oc) of 355 mV and an efficiency of 1.5% under the illumination of 100 mW cm⁻² (AM 1.5). Addition of an ionic liquid, 1-methyl 3-n-hexylimidazolium iodide, into the electrolyte led to an improvement in the cell performances, achieving an overall efficiency of 1.8% under the same illumination. The average cell characteristics of the later devices are , with a fill factor of 0.65.     

Boron-doped diamond-like amorphous carbon as photovoltaic films in solar cell

In this paper, the photovoltaic feature of metal-boron carbide-silicon (MCS) solar cell was reported. The boron-doped diamond-like carbon thin film on n-silicon substrate has been prepared using arc-discharge plasma chemical vapor deposition (PCVD) technique. The conductivity and the resistivity of the film were measured by Bio-Rad Hall5500PC system to be p-type semiconductor and 3–12 Ω cm/□, respectively. The boron content in the films was about 0.8–1.2%, obtained from Auger electron spectroscopy (AES), and some microcrystalline diamond grains (0.5–1.0 μm) embedded in the mainly amorphous network were revealed through scanning electron microscope (SEM) and Raman spectrum. The performance of Au/C(B)/n-Si heterojunction solar cells has been given under dark I–V rectifying curve and I–V working curve (with 100 mW cm⁻² illumination). A measurement of open-circuit voltage V_oc=580 mV and short-circuit current density J_sc=32.5 mA cm⁻² was obtained. Accordingly, the energy conversion efficiency of the device was tentatively determined to be about 7.9% in AM 1.5, 100 mW/cm² illuminated.     

Characterisation of CdCl2 treated electrodeposited CdS/CdTe thin film solar cell

An over 10% efficient electrodeposited CdS/CdTe solar cell has been prepared after CdCl₂ treatment. The open circuit voltage, V_oc, short-circuit current, J_sc and fill factor, FF were 758 mV, 21 mA cm⁻² and 0.65 respectively. The diode factor calculated from current-voltage-temperature measurements changed from 1.54 at 324 K to 2.64 at 146 K. The voltage factor, α ranged from 22.83 at 324 K to 29.46 at 146 K. Data from current-voltage-temperature measurements agrees with the model of Miller and Olsen and indicates that the current transport was a combination of tunneling and interface recombination. Capacitance-voltage-temperature measurements showed that capacitance decreased with increasing frequency and increased with temperature. Capacitance was insensitive to temperature indicating an intrinsic or low-doped depletion layer. The density of interface states was found to be 6.4 × 10¹⁰ cm⁻² eV⁻¹ at 293 K. The carrier concentration of CdTe calculated from Mott-Schottky plot was 1.5 × 10¹⁶ cm⁻³.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Influence of pyrazole derivatives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized TiO2 solar cell performance

The influence of pyrazole additives in an I⁻/I₃⁻ redox electrolyte solution on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics of the cell were measured using 18 different pyrazole derivatives. All of the pyrazole additives enhanced the open-circuit photovoltage (V_oc) and the solar energy conversion efficiency (η), but reduced the short-circuit photocurrent density (J_sc). Most of the pyrazoles improved fill factor (ff). The physical and chemical properties of the pyrazoles were computationally calculated in order to elucidate the reasons for the additive effects on cell performance. The greater the partial charge of the nitrogen atom at position 2 in the pyrazole group, the larger the V_oc, but the smaller the J_sc values. As the dipole moment of the pyrazole derivatives increased, the V_oc value increased, but the J_sc value decreased. The V_oc of the cell also increased as the ionization energy of the pyrazoles decreased. These results suggest that the electron donicity of the pyrazole additives affected the interaction with the nanocrystalline TiO₂ photoelectrode, the I⁻/I₃⁻ electrolyte, and the acetonitrile solvent, which changed the Ru(II)-dye-sensitized solar cell performance.     

Highly efficient 1 μm thick CdTe solar cells with textured TCOs

Thickness reduction of CdTe absorption layer down to 1 μm has been achieved by controlling the temperature profile used during the close-spaced sublimation (CSS) growth. Transparent conducting oxides, such as indium tin oxide (ITO) and textured fluorine doped tin oxide (SnO₂:F) films have been investigated as transparent electrodes for such 1-μm-thick CdTe absorption layers to increase the incident light confinement and thus to achieve higher conversion efficiency. The contribution in solar cell performance has been found in the case of textured TCOs with optimum haze ratio (roughness). Conversion efficiencies of 10.6% (V_oc: 0.75 V, J_sc: 22.02 mA/cm², FF: 0.64, area: 1 cm²) and 11.2% (V_oc: 0.78 V, J_sc: 22.6 mA/cm², FF: 0.63) have been achieved for only 0.6-μm-thick CdTe absorption layers with SnO₂:F-TCO of 11% and 3% of haze ratios, respectively.     

Tungsten diselenide heterojunction photoelectrodes

Tungsten diselenide intercalated with indium p-In_0.5WSe₂ as the semiconducting base layer has been used in the film photocell ITO/WO₃/In_0.5WSe₂. The short-circuit current I_sc of that photocell equals 19.20 mA cm⁻², the open-circuit voltage V_oc = 0.57 V, and the photovoltaic conversion efficiency η = 7.52%.     

Photovoltaic characteristics of CuInS2/CdS solar cell by electron beam evaporation

When a CuInS₂/CdS solar cell was fabricated by depositing CdS thin film with dopant In of 1.0 at% on ternary compound CuInS₂ thin film with the lowest resistivity of 5.59 × 10⁻² Ωcm, its best result was as follows: V_oc = 461 mV, I_sc = 26.9 mA, FF = 0.685, η = 5.66% under the illumination of 100 mW/cm². And its series resistance and lattice mismatch was 5.1 Ω and 3.2%, respectively.Besides, a 4 layer structure solar cell of -CuInS₂/high -CuInS₂/high -CdS/low - CdS has been fabricated. When thickness of high - CuInS₂ was 0.2 μm, its best result was as follows: V_oc = 580 mV, I_sc = 30.6 mA, FF = 0.697, η = 8.25%. An its series resistance and lattice mismatch were 4.3 Ω and 2.8%, respectively.     

Influence of alkyl dihalide gelators on solidification of dye-sensitized solar cells

Quasi-dye-sensitized solar cells were prepared by using ionic liquid-type electrolytes and gelators consisting of polyvinylpyridine and alkyl dihalides. Gelation occurred by the reaction of polyvinylpyridine and alkyl dihalides. When the chain length of the dihalides was varied, the short-circuit current (J_sc) increased with an increase in the chain length. However, the open-circuit voltage (V_oc) and fill factor (ff) slightly decreased. The increase in J_sc was brought about by the decrease in the interfacial resistances between the gel electrolyte and the counter electrode. In addition, the increase in the J_sc was explained by increases in the apparent diffusion coefficient of I⁻/I₃⁻ when the chain length increased. Decreases in V_oc and ff were explained by back-electron transfers from TiO₂ to iodine in the electrolytes. V_oc of the cells solidified by alkyldiiodide was lower than that solidified by alkyldichloride or alkyldibromide. It was explained by negatively shifted redox potential of I⁻/I₃⁻, compared with those for Cl⁻/Cl₂ or Br⁻/Br₂.     

Large-area high efficiency single crystalline silicon solar cells

This paper reports on a 100 cm² single crystalline silicon solar cell with a conversion efficiency of 19.44% (J_sc = 37.65 mA/cm², V_oc = 638 mV, FF = 0.809). The cell structure is as simple as only applying the textured surface, oxide passivation, and back surface field by the screen printing method. The comparison between cell performances of the CZ (Czochralski) and FZ (Floating zone) silicon substrates was investigated. The higher efficiency cells were obtained for the FZ substrate rather than the CZ substrate. The influence of the phosphorus concentration of the emitter on the cell efficiency has also been investigated. A good result was obtained when the surface concentration of phosphorus was 3 × 10²⁰ cm⁻³ and the junction depth was about 0.6 μm.