Synthesis of Ba2NaNb5O15 Powders and Thin Films Using Metal Alkoxides

Transparent and highly oriented Ba₂NaNb₅O₁₅ (BNN) thin films have been prepared by using metal alkoxides. A homogeneous precursor solution was prepared by the controlled reaction of NaOC₂H₅, Nb(OC₂H₅)₅, and barium metal. The BNN precursor included a molecular-level mixture of NaNb(OC₂H₅)₆ and Ba[Nb(OC₂H₅)₆]₂ in ethanol. The alkoxy-derived powder crystallized to a low-temperature phase, and then transformed to orthorhombic BNN (tungsten bronze) at 600°C. BNN precursor films on substrates crystallized to orthorhombic BNN at 800°C via the low-temperature phase. Highly (002) oriented BNN films of tungsten bronze structure were successfully prepared on MgO (100) substrates at 700°C by using BNN underlayer.     

Preparation of Potassium Tantalate Niobate by Sol–Gel Method

Perovskite potassium tantalate niobate (KTN) powders and thin films were synthesized from a metal alkoxide solution. Homogeneous KTN coating solutions were prepared from KOC₂H₅, Ta(OC₂H₅)₅, and Nb(OC₂H₅)₅ in absolute ethanol. The precursor crystallized to pyrochlore at ∼ 650°C, and then to perovskite at ∼ 750°C, depending upon Ta:Nb ratio. H₂O vapor during calcination was found to play a prominent role in the direct and predominant crystallization of perovskite films with preferred orientation. Highly oriented KTN films of perovskite structure were successfully prepared on MgO (100) substrates at 675°C.     

Synthesis of Highly Oriented K(Ta,Nb)O3 (Ta:Nb = 65:35) Film Using Metal Alkoxides

Highly oriented K(Ta,Nb)O₃ (Ta:Nb = 65:35) (KTN) thin films of perovskite structure were synthesized successfully on Pt(100)/MgO(100) substrates from a metal alkoxide solution through reaction control. Homogeneous KTN coating solutions prepared from KOC₂H₅, Ta(OC₂H₅)₅, and Nb(OC₂H₅)₅ in ethanol were analyzed by ¹H, ¹³C, and ⁹³Nb NMR spectroscopy. The KTN precursor included a molecular-level mixture of K[M(OC₂H₅)₆] (M = Ta, Nb) units interacting in ethanol solution. X-ray pole figure measurement showed that perovskite KTN films crystallized on Pt(100)/MgO(100) substrates had not only a (100) orientation but also a three-dimensional regularity of grains. The remanent polarization and coercive field of the KTN film (thickness, 1.0 μm) crystallized at 700°C were 1.5 μC/cm² and 8.7 kV/cm, respectively, at 225 K.     

Processing and Microstructure of Mullite-Zirconia Composites Prepared from Sol-Gel Powders

A high-purity stoichiometric mullite precursor was obtained by hydrolysis of the alkoxides Al(OC₃H₇)₃ and Si(OC₂H₂)₄. Fully sintered mullite ceramics can be prepared from sol-gel powders by sintering them at 1600°C for 4 h in air with the addition of 15 to 20 Vol% ZrO₂ or 1 to 3 mol% Y₂O₃ or both. Introduction of 1 to 3 mol% Y₂O₃ aids the retention of tetragonal ZrO₂; the volume fraction of t -ZrO₂ retained increases with increasing Y₂O₃ content. The maximum t -ZrO₂ retained reaches 34% in a matrix of synthetic mullite with 3 mol% Y₂O₃, but most of this t -ZrO₂ does not undergo stress-induced transformation during grinding.     

Modified Sol-Gel Process for the Production of Lead Titanate Films

A modified sol-gel process has been developed for the production of thin films of PbTiO₃. The new route uses the mixed ligand complex titanium diisopropoxide bis(acetylacetonate), Ti(OC₃H₇)₂(CH₃COCHCOCH₃)₂, in place of titanium tetraisopropoxide, Ti(OC₃H₇)₄. For base-catalyzed conditions, the maximum thickness of crack-free PbTiO₃ films after one high-temperature firing cycle is 1 μm. This value represents a twofold increase in thickness over that obtained using existing sol-gel routes based on Ti(OC₃H₇)₄.     

Synthesis and Properties of Dielectric Ceramics from Metallo-Organic Precursors through the Solid-State Reaction of Mixed Gels

A perovskite structure of 0.4Pb(Mg_1/3Nb_2/3)O₃·0.3Pb(Mg_1/2W_1/2)O₃·0.3PbTiO₃ was prepared from metallo-organic precursors through the solid-state reaction of the mixed gels. Three types of mixed gels were crystallized to obtain PbTiO₃, MgNb₂O₆, and MgWO₄ powders. These powders were calcined at 900°C after mixing with a stoichiometric amount of Pb(CH₃COO)₂·3H₂O. The dielectric constant of the ceramic fired at 900°C was improved by adding an excess of 10 mol% Mg(OC₂H₅)₂, and the ceramic achieved X7T specification of the Electric Industries Association standard. The dielectric loss was reduced by adding an excess of 5 mol% Pb(CH₃COO)₂·3H₂O.     

Preparation by a Sol-Gel Process of Borosilicate Glasses Containing Microcrystals of Tellurium and Zinc Telluride

Borosilicate glasses, 5B₂O₃· 95SiO₂ (mol%), containing TeO₂ and ZnO nominally equivalent to 10 wt% Te and ZnTe were prepared by a solgel method from Si(OC₂H₅)₄, B(OCH₃)₃, H₆TeO₆, and Zn(NO₃)₂. A study by electron spectroscopy for chemical analysis (ESCA) showed that glasses heated at high temperature (450°C) in air contained both Te⁶⁺ and Te⁴⁺ ions on the surface layer, but that mainly Te⁴⁺ ions occurred inside the bulk glass. When solgel-derived borosilicate glasses containing the TeO₂ compound were reduced at elevated temperature in a hydrogen atmosphere, Te crystallites ranging in size from 4 to 15 nm were produced at a lower temperature, between 200° and 250°C. The absorption edge moved from the infrared to the visible wavelength region as the particle size decreased to about 4 nm. For glasses containing both TeO₂ and ZnO, ZnTe crystallites formed at high temperature—over 300°C—and existed along with the Te phase.     

Synthesis of 0.4Pb(Mg1/3Nb2/3)O3–0.3Pb(Mg1/2W1/2)O3–0.3PbTiO3 Ceramics by Metal Alkoxide Method, and Its Dielectric Properties

0.4Pb(Mg_1/3Nb_2/3)O₃–0.3Pb(Mg_1/2W_1/2)O₃–0.3PbTiO₃+ x MgO ( x = 0 to 0.04) were prepared by a metal alkoxide method. The percent of perovskite phase of the calcined powders increased with increased calcination temperatures. About 89% of perovskite phase was obtained at 1050°C. The dielectric constant of the pellets fired at 1100°C was increased by the addition of 10 wt% excess Mg(OC₂H₅)₂ and had a maximum value of 7532 at 1 kHz.     

Processing of Oriented K(Ta,Nb)O3 Films Using Chemical Solution Deposition

K(Ta,Nb)O₃ (KTN) thin films have been prepared by the chemical solution deposition method. KTN precursors consisted of a uniform mixture of K[Ta(OC₂H₅)₆] and K[Nb(OC₂H₅)₆] with interaction at the molecular level. Perovskite KTN thin films with the desired composition (Ta/Nb = 65/35, 50/50, and 35/65) were synthesized from the precursor solutions by the dip coating method. KTN thin films with (100) preferred orientation were successfully synthesized on MgO(100) and Pt(100)/MgO(100) substrates. X-ray pole figure measurements showed that grains of KTN films had a prominent three-dimensional regularity on MgO(100) and Pt(100)/MgO(100) surfaces. The Curie temperatures of KTN films decreased with increasing Ta/Nb ratio. Typical P-E hysteresis loops were observed for KTN thin films of three compositions on Pt(100)/MgO(100) substrates. The values of remanent polarization ( P _r) of KTN films increased as the Ta/Nb ratio changed from 65/35 to 35/65.     

Variation in In-Plane Stress during Densification and Crystallization of Titania Gel Coatings Deposited on Different Substrate Surfaces

Titania gel films were prepared from a coating solution with a starting mole ratio of Ti(OC₃H₇ⁱ)₄:H₂O:HNO₃:C₂H₅OH=1:1:0.2:30 on Si(100) wafers by spin coating, with and without sol–gel-derived, fired silica, and titania underlayers. In situ measurement was conducted on the in-plane stress in the titania gel films during heating up to 500°C at 5°C/min. Basically, for all the gel films, the in-plane, tensile stress increases once with increasing temperature, and then decreases around the temperature of crystallization. The increase in stress was thought to result from the capillary pressure due to solvent evaporation and from the densification of the coatings. The reduction in stress around the temperature of crystallization was ascribed to the accelerated atomic diffusion in the coatings and to the difference in thermal expansion coefficient between the coatings and the Si wafer. However, when the stress–temperature curves were examined more in detail, differences were found in the variation in stress, depending on the underlayers. Then, the question of how the underlayers could induce the crystallization and relax the strain in the coatings was discussed.     

Synthesis of Potassium Niobate from Metal Alkoxides

Preparation of potassium niobate from metal alkoxides was investigated. Potassium-niobium ethoxide, KNb(OC₂H₅)₆, and potassium-niobium propoxide, KNb(OC₃H₇)₆, were synthesized and subsequently hydrolyzed using several water concentrations (0.75 to 6.0 mol of water/(mol of alkoxide)). Rapid precipitation of potassium-deficient particles occurred when higher concentrations of water were used. This resulted in the formation of a multiphase material after calcination, as X-ray diffraction showed the presence of both KNbO₃ and potassium-deficient oxide phases(s). Single-phase KNbO₃ could be prepared by two methods: (1) hydrolysis of KNb(OC₃H₇)₆/propanol solutions using 1 mol of water (per mole of propoxide) added as a water/propanol solution and (2) hydrolysis of KNb(OC₂H₅)₆/ethanol solutions using 1 mol of water (per mole of ethoxide) added as a water/methanol solution. The latter method provided advantages of low calcination temperature for the formation of single-phase KNbO₃ and low weight loss after calcination.     

Microwave Characteristics of (Pb,Ca)(Fe,Nb,Sn)O3 Dielectric Materials

The dielectric properties of (Pb_{1− x} Ca _x ){(Fe_1/2Nb_1/2)_{1– y} Sn _y }O₃ solid solutions, where 0.4 lessthan equal tox ≤ 0.6, y = 0.05, 0.1, have been investigated at microwave frequencies. The replacement of Fe³⁺/Nb⁵⁺ by Sn⁴⁺ at the B–site of the perov-skite structure considerably improves the loss quality factor Q and does not remarkably affect the dielectric constant epsilon_r and the temperature coefficient of resonant frequency tau_f. The tau_f value of nearly 0 ppm/°C can be realized for x= 0.55. New high-quality dielectric ceramics having epsilon_r of 85.3-89.9,Qf values of 7510-8600 GHz, and τ_f of 0-9 ppm/°C were obtained at 1150°C for 3 h sintering in air. The influence of the sintering atmosphere on dielectric properties was also investigated.     

Formation of Sm2+ lons in Sol-Gel-Derived Glasses of the System Na2 O-Al2O3-SiO2

Samarium ions (Sm²⁺) incorporated into aluminosilicate glasses by a sol-gel process showed persistent spectral hole burning at room temperature. Gels of the system Na₂O-Al₂O₃SiO₂ synthesized by the hydrolysis of Si(OC₂H₅)₄, Al(OC₄H₉)₃, CH₃ COONa, and SmCl₃·6H₂O were heated in air at 500°C, then reacted with H₂ gas to form Sm²⁺ ions. Whereas Al³⁺ ions effectively dispersed the Sm³⁺ ions in the glass structure, Na⁺ ions were not effective. The Al₂O₃-SiO₂ glasses proved appropriate for reacting the Sm³⁺ ions with H₂ gas and exhibited the intense photoluminescence of Sm²⁺ ions. The reaction of Sm³⁺ ions with H₂ in the Al₂O₂-SiO₂ glasses was determined by first-order kinetics, and the activation energy equaled 95 kJ/mol. At 800°C, the maximum photoluminescence of the Sm²⁺ ions was achieved within 20 min.     

Phase Diagram and Oxygen-Ion Conductivity in the Y2O3-Nb2O5 System

The phase equilibria in the Y₂O₃-Nb₂O₅ system have been studied at temperatures of 1500° and 1700°C in the compositional region of 0-50 mol% Nb₂O₅. The solubility limits of the C-type Y₂O₃ cubic phase and the YNbO₄ monoclinic phase are 2.5 (±1.0) mol% Nb₂O₅ and 0.2 (±0.4) mol% Y₂O₃, respectively, at 1700°C. The fluorite (F) single phase exists in the region of 20.1-27.7 mol% Nb₂O₅ at 1700°C, and in the region of 21.1-27.0 mol% Nb₂O₅ at 1500°C, respectively. Conductivity of the Y₂O₃- x mol% Nb₂O₅ system increases as the value of x increases, to a maximum at x = 20 in the compositional region of 0 ≤ x ≤ 20, as a result of the increase in the fraction of F phase. In the F single-phase region, the conductivity decreases in the region of 20-25 mol% Nb₂O₅, because of the decrease in the content of oxygen vacancies, whereas the conductivity at x = 27 is larger than that at x = 25. The conductivity decreases as the value of x increases in the region of 27.5 ≤ x ≤ 50, because of the decrease in the fraction of F. The 20 mol% Nb₂O₅ sample exhibits the highest conductivity and a very wide range of ionic domain, at least up to log p _O2=−20 (where p _O2 is given in units of atm), which indicates practical usefulness as an ionic conductor.     

Effect of Phosphorus Ions on the Proton Conductivity in the Sol–Gel-Derived Porous Glasses

The effect of phosphorus ions on the proton conductivity was examined for the sol–gel-derived glasses. The porous glasses were prepared through hydrolysis of PO(OCH₃)₃ and Si(OC₂H₅)₄, in which the phosphorus ions consisted of the POH bonds and were dissolved into the silica matrix without any P-O-Si bond. The electrical conductivity increased in a humid atmosphere and reached ∼30 mS/cm at 50°C under 70% RH. High conductivity is achieved by both the POH bonds and the molecular water bonded to the POH bonds. The conductivity increased with a change in humidity from 40% to 80% RH. The phosphorus ions were selectively dissolved in water, resulting in a lower conductivity.     

Effects of Transition-Metal Substitution on the Catalytic Properties of Barium Hexaaluminogallate

The effects of the substitution of transition-metal ions and/or reductant gases on the catalytic properties of barium hexaaluminogallate were investigated. Transition-metal-substituted hexaaluminogallates (BaM(Al,Ga)₁₁O₁₉, M = transition metal, Al/Ga = 9/3) were synthesized from aqueous metal nitrates and ammonium carbonate by the coprecipitation followed by crystallization at 1100°C. The direct NO _x reduction was observed over BaM(Al,Ga)₁₁O₁₉ to be around 10%. The NO _x removal activity of BaM(Al,Ga)₁₁O₁₉ powders was improved by addition of C₃H₆ as a reductant gas. Co-, Ni- and Cu-substituted BaM(Al,Ga)₁₁O₁₉ catalysts exhibited about 40% NO _x reduction with C₃H₆ in excess oxygen at a high space velocity of 10 000 h⁻¹. The NO _x reduction on Mn- and Fe-substituted BaM(Al,Ga)₁₁O₁₉ catalysts was less than 10% even in the presence of C₃H₆. The temperature of the effective NO _x reduction on BaM(Al,Ga)₁₁O₁₉ catalysts could be adjusted from 350° to 500°C by the selection of the transition-metal substitution in the catalysts. The catalysts hold high activities for NO _x reduction even at 500°C in water vapor produced in the combustion system of reductant gases.     

Preparation of Small-Particle-Size, Semiconductor CdS-Doped Silica Glasses by the Sol–Gel Process

The sol–gel process has been applied successfully to the preparation of small-particle-size CdS-doped silica glasses with a significant quantum size effect. Gels prepared through the hydrolysis of a complex solution of Si(OC₂H₅)₄ and Cd(CH₃COO)₂·2H₂O were heated at 500°C, then reacted with H₂S gas to form fine, hexagonal, CdS-microcrystal-doped glasses. The optical absorption edge is blue shifted by ∼0.4 eV compared with the bulk absorption value of CdS crystal. This result is interpreted in terms of a quantum-confinement effect of small crystal size.     

Determination of the Pcmn/Ibm2 Phase Boundary at High Temperatures in the System Ca2Fe2O5-Ca2Al2O5

The crystals of Ca₂(Al _x Fe_{1− x} )₂O₅ with 0 ≤ x ≤ 0.4 were examined using powder XRD at temperatures between 25° and 1000°C. The Pcmn to Ibm 2 phase transition was readily detected by the disappearance of the 131 and 151 reflections ( h + k + l odd). Thus, the phase relationship has been determined as combined functions of the temperature and x -value. At 25°C, the space group changed from Pcmn (0 ≤ x ≤ 0.23) to Ibm 2 (0.24 ≤ x ≤ 0.40) across x = 0.235. With increased x -value, the cell dimensions of both phases steadily decreased, showing the nearly complete continuity at that phase boundary. For the crystal with x = 0 (Ca₂Fe₂O₅), the cell dimensions steadily increased during heating to 685°C, at which temperature the phase transition occurred. There was a slight discontinuous decrease in cell dimensions just after the transition. Subsequent heating to 1000°C of the Ibm 2 phase led to a steady thermal expansion along the b -axis and c -axis, while a slight contraction occurred along the a -axis up to 800°C.     

Preparation and Nonlinear Optical Properties of Quantum-Sized CuCl-Doped Silica Glass by the Sol–Gel Process

The sol–gel process has been applied successfully to the preparation of small-sized CuCl-doped silica glass with a significant quantum-sized effect. Gel synthesized by the hydrolysis of a complex solution of Si(OC₂H₅)₄ and CuCl with an HCl catalyst is heated to 900°C to form fine, cubic CuCl crystals. Above 700°C, absorption peaks observed at ∼370 and ∼380 nm are attributed to the excitation of confined Z_1,2 and Z₃ excitons, respectively, in the CuCl microcrystals. As the size of the CuCl crystals decreases, exciton energy shifts to the higher-energy side. The resonant third-order nonlinear susceptibility at 77 K is 1.1 × 10⁻⁸ esu, which originates from the enhancement by the quantum-sized effect of the exciton.     

Nitridation of the Sol–Gel-Derived Titanium Oxide Films by Heating in Ammonia Gas

Dip-coated sol–gel-derived TiO₂ films on an alumina substrate were converted to nonstoichiometric titanium nitride (TiN _x ( x ≦ 1)) films by heating at approxmately 1000°C in NH₃ gas. TiO₂ films made from TiO₂ sols prepared from Ti(O– i -C₃H₇)₄ and stabilized by diethanolamine were more easily nitrided than those from sols containing HCl as a deflocculant reagent. This appears to be a result of the more porous structure of the former films.