Ionicity Versus Covalency in MgB2: The Hidden Role of Mg

The discovery of superconductivity in MgB₂ at T _c = 39 K has initiated great efforts to identify its microscopic origin. A superconducting two-gap structure has been firmly established experimentally. However, the importance of the smaller gap which is essential in pushing T _c above the BCS value of a one-gap superconductor has mostly been ignored. Our results based on ab initio calculations and a newly introduced k, j-dependent bonding indicator show that Mg contributes significantly to states from which the small gap originates. In addition, it is revealed that Mg—B covalent bonding is an important factor in limiting the substitution of Mg in MgB₂.     

Two-Dimensional Superconducting Fluctuations in MgB2 Films

The origin of the resistive transition broadening for superconducting MgB₂ films is investigated experimentally. The crucial role of two-dimensional weak and critical fluctuations is demonstrated.     

Superconducting single crystalline MgB2 nanotubes

Large-scale single crystalline MgB₂ tubelike nanostructures were successfully prepared by thermal evaporation of MgB₂ particles precursors without involvement of template or patterned catalyst. The inner diameter, outer diameter and length of the as-fabricated single MgB₂ nanotube (NT) are respectively about 30 nm, 90 nm and several tens of microns. Existence of superconductivity within the products is confirmed by AC and DC magnetic susceptibility at low temperatures. The work represents the achievement to produce the bulk superconductivity with the hollow-structured morphology. Synthesis of MgB₂ NTs with bulk superconductivity may open up new possibilities for the fundamental understanding of the effect of dimensionality on superconductivity.     

Superconductivity in High-Pressure Synthesized Pure and Doped MgB2 Compounds

Dense pure and doped (Mg_{1 – x} A _x )B₂ samples with A = Na, Ca, Cu, Ag, Zn, and Al were synthesized at high pressure–high temperature in a multi-anvils press (3.5–6 GPa, 900–1000°C) for 0 < x 0.20. They were studied by X-ray diffraction, scanning electron microscopy and their superconducting properties were investigated by AC susceptibility, magnetization, and transport measurements. Only Al is really substituted on the Mg site. The other elements form secondary phases with B or Mg. No large effect is observed on the superconducting properties T _c, j _c critical current, H _irr, and H _c2.     

Electroless deposition of superconducting MgB2 films on various substrates

The superconducting properties of magnesium diboride (MgB₂) films prepared by electroless deposition on various substrates including silver, gold and silicon are reported. In this study, MgB₂ films were fabricated on silver, gold, and silicon using an electroless plating technique, while controlling the redox potential to improve the deposition quality. The structure, morphology, and superconducting properties of the samples were investigated using X-ray diffraction, magnetometry, scanning electron microscopy, and Raman spectroscopy. X-ray diffraction and Raman spectroscopy confirmed that the films are polycrystalline MgB₂ but also contain some impurity phases. All the MgB₂ films show superconducting transitions near 39 K, the value for bulk MgB₂, with the superconducting volume fraction ranging from approximately 1 to 2%. We find a strong dependence of film quality with the oxidation potential of the bath.     

Excellent Jc in the low-temperature sintered MgB2 superconductors consisted of uncompleted MgB2 phase and residual Mg

Though low-temperature sintering of MgB₂ superconductors below Mg melting point can effectively depress volatility of Mg and increase sintering density, its development was limited in recent years for the reason that it usually took very long time to form complete MgB₂ phase with excellent J_c at low temperature. In present work, significantly improved J_c was surprisingly obtained in the MgB₂ samples sintered at 575 °C for only 5 h after short-time ball milling, even though formation of MgB₂ phase is not completed and lots of residual Mg is still present in these samples. The grain connectivity in prepared samples is obviously improved compared to referred MgB₂ sample sintered at high temperature, which is responsible for the improvement of J_c. The method developed in present work seems bring a new opportunity for the development of low-cost practical MgB₂ superconductors with improved J_c without using expensive nanometer-size dopants or high-temperature sintering.     

Material characteristics of sputter-deposited Zr-doped In2O3/ZnO heterostructures on sapphire (0001) substrates

5 wt.% Zr-doped In₂O₃ (Zr-In₂O₃) films with thicknesses from 95 to 220 nm were grown on 90 nm-thick ZnO-buffered sapphire (0001) substrates by radio-frequency magnetron sputtering in an oxygen-deficient atmosphere. The dependence on thickness of the structural information and electrical properties of the Zr-In₂O₃ films on the ZnO-fuffered sapphire substrates was studied. The X-ray diffraction patterns show that the (002)-textured ZnO buffer-layer is a good template for the growth of the highly (222)-textured In₂O₃ films on the sapphire substrate. The surface of the Zr-In₂O₃ film becomes rougher as the film thickness increases, perhaps because of the formation of larger mounds on the film surface as the thickness of Zr-In₂O₃ increases. The carrier concentration increased markedly from 5.8 × 10²⁰ to 1.83 × 10²¹ cm^− 3 with film thickness from 95 to 220 nm, because more growth-induced defects are formed in the thick Zr-In₂O₃ film. The large increase in the number of charge carriers and the improvement in the crystalline quality in the film reduce the resistivity of the thicker Zr-In₂O₃ film.     

MgB2 Superconducting Tips for Scanning Tunneling Microscopy Study

We report a simple method for the fabrication of reproducible, clean, and stable MgB₂ superconducting tips. The quality of these tips has been verified by imaging the surface of a thin Au(111) film sample, using a low temperature scanning tunneling microscopy (STM). Using the MgB₂ superconducting tip, high-quality semiatomically resolved STM surface images of the thin Au(111) film sample have been observed, which unambiguously indicates that the fabrication of relatively superconducting MgB₂, suitable for use as STM tips, is feasible.     

Direct STM mapping of the superconducting energy gap in single crystal BI2SR2CACU2O8+x

Scanning tunneling spectroscopy applied to BiO cleavage planes of 90 KT _c BSCCO 2212 at 4.2 K simultaneously provides topography and localdI/dV spectra (superconducting DOS). The spectra, which are similar to recent photoemission spectra, confirm a large gap parameter (x, y) associated with an apparently gapless DOS on the uppermost layer. Transverse spatial variations of on a 100 Å scale are attributed to variations in BiO metallicity, presumably originating in oxygen stoichiometry variations in an unannealed crystal. We identify two characteristicdI/dV spectral shapes with regions of metallic and nonmetallic BiO layers, and can relate these by the McMillan model of the superconducting proximity effect. A sharply peaked spectral shape, similar to that observed in photoemission, is predicted for the metallic BiO layer induced superconducting by its proximity to the underlying CuO₂ planes. The short mean free path and short coherence length imply that both tunneling and photoemission spectra are heavily weighted toward contributions from the BiO layer in fully metallic 2212. The present results and analysis thus suggest that the superconducting proximity effect influences the lineshapes seen by both techniques.     

Degradation of Superconducting Properties in MgB2 by Formation of the MgB4 Phase

Superconducting MgB₂ polycrystalline samples have been fabricated under two different conditions in order to determine the effect of MgB₄ phase. A series of samples was placed in an -alumina container closed with a cup and fired under high purity argon gas. The other series of samples was placed in an -alumina boot without any lid and fired under similar conditions. For the first series of samples, we have found pure MgB₂ phase formation and a narrow transition width at 0.4 K. For the second series of samples, significant amount of MgB₄ phase were formed and the T _zero was decreased to 27 K. For both the group of samples magnetization hysteresis loops obtained at various temperature range and applied field up to 2 T. The best J _cmag for the first series of samples was 1.9 × 10⁵ A/cm² at 10 K and 0 T, and for the second series of samples was 0.7 × 10⁴ A/cm² at 10 K and 0 T.     

Microstructure and superconducting properties of MgB2 films prepared by solid state reaction of multilayer precursors of the elements

Surface morphology and superconducting properties of MgB₂ superconducting thin films prepared by ex-situ annealing of multilayer Mg/B precursors in Mg vapor are studied.Depending on the precursor structure different physical and microstructural properties of the superconductor evolve. Structure and composition of the films are analyzed by scanning electron microscopy and wavelength dispersive x-ray spectroscopy. It is found that certain precursor structures can lead to high quality superconducting films, however, in specific precursor structures mechanical stress leads to the formation of wrinkles strongly affecting the superconducting homogeneity of the films. A correlation between microstructure and superconducting properties, such as pinning or critical current density, can be provided via magneto-optical Faraday microscopy.     

Contact resistance simulations and measurements of MgB2–MgB2 lap joints

Resistive joints are found in many systems using superconductors. Joints are used to connect the superconductor to a normal conducting current terminal or to connect two superconductors, for example in pancake type windings. Knowing the resistance between the contacts is important in studying the heat balance of a superconducting system. We performed several experiments with MgB₂–MgB₂ lap joints to determine the relation between the contact resistance and solder joint length. Also, the effect of the outer sheath material on the contact resistance was studied. To support the experiments, a computational model using Finite Element Method was created. The measured and computed results showed adequate correlation. In the experiments, the soldered joint length was varied from 3 to 20 mm resulting in contact areas between 2.5 and 16.6 mm². The results indicated that the outer sheath material has significant effect on the contact resistance. For a Monel sheathed conductor the measured contact resistances varied between 4 and 16 μΩ and if a copper sheath was used, the resistances were an order of magnitude smaller.     

Visible light degradation of Orange II using xCuyOz/TiO2 heterojunctions

Cu₂O/TiO₂, Cu/Cu₂O/TiO₂ and Cu/Cu₂O/CuO/TiO₂ heterojunctions were prepared and studied for their potential application as photocatalysts able to induce high performance under visible light. Orange II was used as a representative dye molecule. The effect of the amount and composition of the photosensitizers toward the activation of TiO₂ was studied. In each case, the global mechanism of Inter Particle Electrons Injection (IPEI) was discussed. The highest photocatalytic activity was observed for the system Cu/Cu₂O/CuO (MB2 catalyst) under visible light (t_1/2 = 24 min, k = 159.7 × 10⁻³ min⁻¹) and for the heterojunction cascade Cu/Cu₂O/CuO/TiO₂ (MB2 (50%)/TiO₂) under UV–vis light (t_1/2 = 4 min, k = 1342 × 10⁻³ min⁻¹). In the last case, the high performance was attributed firstly to the electromotive forces developed under this configuration in which CuO energy bands mediate the electrons transfer from Cu₂O to TiO₂. The formation of monobloc sensitizers also accounts for the decrease of the probability of the charges lost. It was demonstrated that “Cu₂O/CuO” governs the capability of the heterojunction cascade and Cu does not play a significant role regardless of the heterojunction cascade efficiency. The electrical energy consumption per order of magnitude for photocatalytic degradation of Orange II was investigated for some representative catalytic systems. Visible/MB2 and UV/vis MB2 (50%)/TiO₂ exhibited respectively 0.340 and 0.05 kWh m⁻³ demonstrating the high efficiency of the systems.     

Microwave direct synthesis of MgB2 superconductor

Intermetallic compound superconductor MgB₂ was synthesized from spherical magnesium powder and lower purity amorphous boron powder by microwave direct heating. Powder X-ray diffraction (XRD) analysis indicates that the phases of the synthesis sample are MgB₂ (major phase) and a small amount of MgO. Scanning electron microscope (SEM) observation shows that the MgB₂ grain size is homogeneous and the particle size is about several hundreds of nanometers. The onset superconducting transition temperature of the MgB₂ sample measured by the temperature dependence of magnetization measurement is about 37.6 K. The critical current density J_c calculated according to the Bean model are about 2.0 × 10⁵ A/cm² at 20 K in self-field and 1.0 × 10⁵ A/cm² at 20 K in 1 T applied field.     

Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas

N-type nanocrystalline 3C-SiC films were prepared by hot-wire chemical vapor deposition from SiH₄/CH₄/H₂ and N₂ as a doping gas and the structural and electrical properties were investigated. The gas flow rates of SiH₄, CH₄ and H₂ were 1, 1 and 200 sccm, respectively. As the N₂ gas flow rate was increased from 0 to 10 sccm, the conductivity and the activation energy improved from 0.05 to 0.3 S/cm and from 45 to 28 meV, respectively. The Hall Effect measurement proved that the improvement of the electrical properties was caused by the increase in the carrier concentration. On the other hand, in the N₂ gas flow rate between 10 and 50 sccm, the conductivity and the activation energy remained unchanged. The crystallinity deteriorated with increasing N₂ gas flow rate. This gave rise to the unchanged electronic properties in spite of the increase in the intake of N atoms.     

基于Si掺杂增强光吸收提升Li2SnO3 光催化降解四环素的研究

在Li₂SnO₃中掺杂Si,研究了Si掺杂Li₂SnO₃对四环素的光催化降解性能。结果表明,对Li₂SnO₃进行等电子Si掺杂使其光学吸收带隙减小和光吸收系数增大,提高了对四环素的光催化降解效率。等电子Si掺杂Li₂SnO₃为纯相不规则块状固体,随着Si掺杂量的增加其晶格参数呈减小的趋势。Si掺杂使样品的光催化性能显著提高。Si掺杂量为10%的样品,在紫外光照射25 min后光催化降解效率为75.8%,约为母体的2倍。Si掺杂Li₂SnO₃的光催化降解行为满足赝一级动力学模型,拟合速率常数为0.02464 min^-1。在Si掺杂Li₂SnO₃的价带顶形成的Si-O键减少了光学吸收带隙,使其光吸收能力增强。Si掺杂Li₂SnO₃的光催化降解机制,属于空穴主导型。     

Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system

We investigated an influence of gas pressure on low-temperature preparation of nanocrystalline cubic silicon carbide (nc-3C-SiC) films by hot-wire chemical vapour deposition (HW-CVD) using SiH₄/CH₄/H₂ system. X-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectra revealed that the films prepared below 1.5 Torr were Si-nanocrystallite-embedded hydrogenated amorphous SiC. On the other hand, nc-3C-SiC films were successfully prepared at gas pressure above 2 Torr. The high gas pressure plays two important roles in low-temperature preparation of nc-3C-SiC films: (1) leading to sufficient decomposition of CH₄ molecules through a gas phase reaction and an increase in the incorporation of carbon atoms into film and (2) promoting a creation of H radicals on the heated filament, allowing the sufficient coverage of growing film surface and a selective etching of amorphous network structure and/or crystalline-Si phase. It was found that total gas pressure is a key parameter for low-temperature preparation of nc-3C-SiC films.     

Raman spectroscopic study of structure of WO3La2O3B2O3 glasses with no color and crystallization of LaBWO6

Glasses with the nominal compositions of xWO₃25La₂O₃(75 − x)B₂O₃ (mol%) with x = 15, 25, and 50 were prepared using a conventional melt quenching method, and their structure and crystallization behavior were examined from Raman scattering spectra and X-ray diffraction analyses. The glasses are colorless in the visible light region and give the optical band gap energy of 3.49-3.61 eV. The glass transition and crystallization temperatures and the thermal stability against crystallization decrease with increasing WO₃ content. The strong Raman bands at 840 and 940-960 cm⁻¹ suggest that the main coordination state of W⁶⁺ ions in the glasses is isolated (WO₄)²⁻ tetrahedral units. The formation of WO₆ octahedral units is also suggested in the glasses with high WO₃ contents. The main crystallization mechanism in the glasses is the surface crystallization, and the glass of 50WO₃25La₂O₃25B₂O₃ shows the crystallization of LaBWO₆ single phase. The present study proposes that WO₃La₂O₃B₂O₃ glasses and crystallized glasses are very interesting as optical functional materials.     

Current noise in MgB2 superconducting thin films

In this paper we present some experimental results concerning the current noise produced during the resistive transition in MgB₂ thin films. Preliminary investigations evidenced the presence of electrical noise whose power spectrum has a region of the 1/fⁿ type with n 3. We suggest that the noise may originate from abrupt rearrangement of the current distribution inside the specimen during the percolative process of a diphasic system. Experimental measurements of the spectral components of the current noise taken during the resistive transition will be given and discussed.