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1.
K. Maruyama H. Nishino T. Okamoto S. Murakami T. Saito Y. Nishijima M. Uchikoshi M. Nagashima H. Wada 《Journal of Electronic Materials》1996,25(8):1353-1357
(lll)B CdTe layers free of antiphase domains and twins were directly grown on (100) Si 4°-misoriented toward<011> substrates,
using a metalorganic tellurium (Te) adsorption and annealing technique. Direct growth of (lll)B CdTe on (100) Si has three
major problems: the etching of Si by Te, antiphase domains, and twinning. Te adsorption at low temperature avoids the etching
effect and annealing at a high temperature grows single domain CdTe layers. Te atoms on the Si surface are arranged in two
stable positions, depending on annealing temperatures. We evaluated the characteristics of (lll)B CdTe and (lll)B HgCdTe layers.
The full width at half maximum (FWHM) of the x-ray double crystal rocking curve (DCRC) showed 146 arc sec at the 8 |im thick
CdTe layers. In Hg1−xCdxJe (x = 0.22 to 0.24) layers, the FWHMs of the DCRCs were 127 arc sec for a 7 (im thick layer and 119 arc sec for a 17 (im
thick layer. The etch pit densities of the HgCdTe were 2.3 x 106 cm2 at 7 ^m and 1.5 x 106 cm-2 at 17 um. 相似文献
2.
Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy 总被引:4,自引:0,他引:4
T. J. De Lyon R. D. Rajavel J. E. Jensen O. K. Wu S. M. Johnson C. A. Cockrum G. M. Venzor 《Journal of Electronic Materials》1996,25(8):1341-1346
High-quality, single-crystal epitaxial films of CdTe(112)B and HgCdTe(112)B have been grown directly on Si(112) substrates
without the need for GaAs interfacial layers. The CdTe and HgCdTe films have been characterized with optical microscopy, x-ray
diffraction, wet chemical defect etching, and secondary ion mass spectrometry. HgCdTe/Si infrared detectors have also been
fabricated and tested. The CdTe(112)B films are highly specular, twin-free, and have x-ray rocking curves as narrow as 72
arc-sec and near-surface etch pit density (EPD) of 2 × 106 cm−2 for 8 μm thick films. HgCdTe(112)B films deposited on Si substrates have x-ray rocking curve FWHM as low as 76 arc-sec and
EPD of 3-22 × 106 cm−2. These MBE-grown epitaxial structures have been used to fabricate the first high-performance HgCdTe IR detectors grown directly
on Si without use of an intermediate GaAs buffer layer. HgCdTe/Si infrared detectors have been fabricated with 40% quantum
efficiency and R0A = 1.64 × 104 Ωm2 (0 FOV) for devices with 7.8 μm cutoff wavelength at 78Kto demonstrate the capability of MBE for growth of large-area HgCdTe
arrays on Si. 相似文献
3.
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications 总被引:1,自引:0,他引:1
T. J. de Lyon R. D. Rajavel J. A. Vigil J. E. Jensen O. K. Wu C. A. Cockrum S. M. Johnson G. M. Venzor S. L. Bailey I. Kasai W. L. Ahlgren M. S. Smith 《Journal of Electronic Materials》1998,27(6):550-555
Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance
at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si via
CdTe(112)B buffer layers, whose structural properties include x-ray rocking curve full width at half maximum of 63 arc-sec
and near-surface etch pit density of 3–5 × 105 cm−2 for 9 μm thick CdTe films. HgCdTe p+-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths
ranging from 3.5 to 5 μm. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum
interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors on CdZnTe and
Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the
I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited
current model for temperatures down to 110K. The performance of MBE-grown diodes on Si is also equivalent to that of typical
liquid phase epitaxy-grown devices on CdZnTe with R0A products in the 106–107 Θ-cm2 range for 3.6 μm cutoff at 125K and R0A products in the 104–105 Θ-cm2 range for 4.7 μm cutoff at 125K. 相似文献
4.
M. Niraula K. Yasuda T. Ishiguro Y. Kawauchi H. Morishita Y. Agata 《Journal of Electronic Materials》2003,32(7):728-732
The growth characteristics and crystalline quality of thick (100) CdTe-epitaxial layers grown on (100) GaAs and (100) GaAs/Si
substrates in a metal-organic vapor-phase epitaxy (MOVPE) system for possible applications in x-ray imaging detectors were
investigated. High-crystalline-quality epitaxial layers of thickness greater than 100 μm could be readily obtained on both
types of substrates. The full width at half maximum (FWHM) values of the x-ray double-crystal rocking curve (DCRC) decreased
rapidly with increasing layer thickness, and remained around 50–70 arcsec for layers thicker than 30 μm on both types of substrates.
Photoluminescence (PL) measurement showed high-intensity excitonic emission with very small defect-related peaks from both
types of epilayers. Stress analysis carried out by performing PL as a function of layer thickness showed the layers were strained
and a small amount of residual stress, compressive in CdTe/GaAs and tensile in CdTe/GaAs/Si, remained even in the thick layers.
Furthermore, the resistivity of the layers on the GaAs substrate was found to be lower than that of layers on GaAs/Si possibly
because of the difference of the activation of incorporated impurity from the substrates because of the different kinds of
stress existing on them. A heterojunction diode was then fabricated by growing a CdTe epilayer on an n+-GaAs substrate, which exhibited a good rectification property with a low value of reverse-bias leakage current even at high
applied biases. 相似文献
5.
W. Lei R. J. Gu J. Antoszewski J. Dell L. Faraone 《Journal of Electronic Materials》2014,43(8):2788-2794
In this work, GaSb is proposed as a new alternative substrate for the growth of HgCdTe via molecular beam epitaxy (MBE). Due to the smaller mismatch in both lattice constant and coefficient of thermal expansion between GaSb and HgCdTe, GaSb presents a better alternative substrate for the epitaxial growth of HgCdTe, in comparison to alternative substrates such as Si, Ge, and GaAs. In our recent efforts, a CdTe buffer layer technology has been developed on GaSb substrates via MBE. By optimizing the growth conditions (mainly growth temperature and VI/II flux ratio), CdTe buffer layers have been grown on GaSb substrates with material quality comparable to, and slightly better than, CdTe buffer layers grown on GaAs substrates, which is one of the state-of-the-art alternative substrates used in growing HgCdTe for the fabrication of mid-wave infrared detectors. The results presented in this paper indicate the great potential of GaSb to become the next generation alternative substrate for HgCdTe infrared detectors, demonstrating MBE-grown CdTe buffer layers with rocking curve (double crystal x-ray diffraction) full width at half maximum of ~60 arcsec and etch pit density of ~106 cm?2. 相似文献
6.
S. R. Rao S. S. Shintri J. K. Markunas R. N. Jacobs I. B. Bhat 《Journal of Electronic Materials》2010,39(7):996-1000
High-quality (211)B CdTe buffer layers on Si substrates are required to enable Hg1–x
Cd
x
Te growth and device fabrication on lattice-mismatched Si substrates. Metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe
on Si substrates using Ge and ZnTe interlayers has been achieved. Cyclic annealing has been used during growth of thick CdTe
layers in order to improve crystal quality. The best (211)B CdTe/Si films grown in this study display a low x-ray diffraction
(XRD) rocking-curve full-width at half-maximum (FWHM) of 85 arcsec and etch pit density (EPD) of 2 × 106 cm−2. These values are the best reported for MOVPE-grown (211) CdTe/Si and are comparable to those for state-of-the-art molecular
beam epitaxy (MBE)-grown CdTe/Si. 相似文献
7.
Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays 总被引:1,自引:0,他引:1
S. M. Johnson T. J. de Lyon C. A. Cockrum W. J. Hamilton T. Tung F. I. Gesswein B. A. Baumgratz L. M. Ruzicka O. K. Wu J. A. Roth 《Journal of Electronic Materials》1995,24(5):467-473
Direct epitaxial growth of high-quality 100lCdZnTe on 3 inch diameter vicinal {100}Si substrates has been achieved using molecular
beam epitaxy (MBE); a ZnTe initial layer was used to maintain the {100} Si substrate orientation. The properties of these
substrates and associated HgCdTe layers grown by liquid phase epitaxy (LPE) and subsequently processed long wavelength infrared
(LWIR) detectors were compared directly with our related efforts using CdZnTe/ GaAs/Si substrates grown by metalorganic chemical
vapor deposition (MOCVD). The MBE-grown CdZnTe layers are highly specular and have both excellent thickness and compositional
uniformity. The x-ray full-width at half-maximum (FWHM) of the MBE-grown CdZnTe/Si increases with composition, which is a
characteristic of CdZnTe grown by vapor phase epitaxy, and is essentially equivalent to our results obtained on CdZnTe/GaAs/Si.
As we have previously observed, the x-ray FWHM of LPE-grown HgCdTe decreases, particularly for CdZnTe compositions near the
lattice matching condition to HgCdTe; so far the best value we have achieved is 54 arc-s. Using these MBE-grown substrates,
we have fabricated the first high-performance LWIR HgCdTe detectors and 256 x 256 arrays using substrates consisting of CdZnTe
grown directly on Si without the use of an intermediate GaAs buffer layer. We find first that there is no significant difference
between arrays fabricated on either CdZnTe/Si or CdZnTe/GaAs/Si and second that the results on these Si-based substrates are
comparable with results on bulk CdZnTe substrates at 78K. Further improvements in detector performance on Si-based substrates
require a decrease in the dislocation density. 相似文献
8.
E. P. G. Smith G. M. Venzor M. D. Newton M. V. Liguori J. K. Gleason R. E. Bornfreund S. M. Johnson J. D. Benson A. J. Stoltz J. B. Varesi J. H. Dinan W. A. Radford 《Journal of Electronic Materials》2005,34(6):746-753
Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe
mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large
format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR)
double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The
HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared
detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching
demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using
wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy
and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication
of photolithographic mask dimensions. 相似文献
9.
Y. P. Chen J. P. Faurie S. Sivananthan G. C. Hua N. Otsuka 《Journal of Electronic Materials》1995,24(5):475-481
CdTe(lll)B layers have been grown on misoriented Si(001). Twin formation inside CdTe(lll)B layer is very sensitive to the
substrate tilt direction. When Si(001) is tilted toward [110] or [100], a fully twinned layer is obtained. When Si(001) is
tilted toward a direction significantly away from [110], a twin-free layer is obtained. Microtwins inside the CdTe(111)B layers
are overwhelmingly dominated by the lamellar twins. CdTe(111)B layers always start with heavily lamellar twinning. For twin-free
layers, the lamellar twins are gradually suppressed and give way to twin-free CdTe(111)B layer. The major driving forces for
suppressing the lamellar twinning are the preferential orientation of CdTe[11-2] along Si[1-10] and lattice relaxation. Such
preferential orientation is found to exist for the CdTe(111)B layers grown on Si(001) tilted toward a direction between [110]
and [100]. 相似文献
10.
J. K. Markunas R. N. Jacobs P. J. Smith J. Pellegrino 《Journal of Electronic Materials》2011,40(8):1809-1814
Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched
alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order
of 8 μm to 12 μm, have helped reduce dislocation densities in HgCdTe layers. In this study, the reduction of threading dislocation densities
in CdTe buffer layers grown on locally thinned Si substrates was examined. A novel Si back-thinning technique was developed
that maintained an epiready front surface and achieved Si thicknesses as low as 1.9 μm. Threading dislocation densities, acquired by defect decoration techniques, were reduced by as much as 60% for CdTe buffer
layers grown on these thinned regions when compared with unthinned regions. However, this reduction is inconsistent with prior
notions that threading dislocation propagation is dominated by image forces. Instead, the thickness gradient of thinned Si
may play a larger role. 相似文献
11.
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress 总被引:3,自引:0,他引:3
T. J. de Lyon J. E. Jensen M. D. Gorwitz C. A. Cockrum S. M. Johnson G. M. Venzor 《Journal of Electronic Materials》1999,28(6):705-711
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared
detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication
of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial
approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions
developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including
control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material
quality of HgCdTe/Si and the performance of HgCdTe detector structures grown on CdTe/Si(112) composite substrates is reviewed.
Finally, we discuss some of the challenges related to composition uniformity and defect generation encountered with scaling
the MBE growth process for HgCdTe to large-area Si substrates. 相似文献
12.
T. Fanning M. B. Lee L. G. Casagrande D. Di Marzio M. Dudley 《Journal of Electronic Materials》1993,22(8):943-949
The structural quality of CdTe(111)B substrates and MBE grown CdTe epilayers is examined with synchrotron white beam x-ray
topography (SWBXT). Reflection SWBXT indicates that CdTe substrates with comparable x-ray double crystal rocking curve full
width at half maximum values can have radically different defect microstructures, i.e. dislocation densities and the presence
of inclusions. Dislocation mosaic structures delineated by SWBXT are consistent with the distribution of etch pits revealed
by destructive chemical etch pit analysis. Direct one-to-one correspondence between distinct features of the topographic image
and individual etch pits is demonstrated. Clearly resolved images of individual dislocations are obtained by carrying out
transmission SWBXT. Our investigation demonstrates how, the extent of twinning in a CdTe epilayer is strongly influenced by
the quality of the defect microstructure, and how dislocations propagate from an inclusion. 相似文献
13.
H. Ebe T. Okamoto H. Nishino T. Saito Y. Nishijima M. Uchikoshi M. Nagashima H. Wada 《Journal of Electronic Materials》1996,25(8):1358-1361
CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition
(MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate.
The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior
to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when
Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown
directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A
CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure.
The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth
on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms. 相似文献
14.
Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates 总被引:2,自引:0,他引:2
P. Ballet F. Noël F. Pottier S. Plissard J. P. Zanatta J. Baylet O. Gravrand E. De Borniol S. Martin P. Castelein J. P. Chamonal A. Million G. Destefanis 《Journal of Electronic Materials》2004,33(6):667-672
In this paper, we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength
infrared (MWIR) band. High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on
CdZnTe and CdTe/Ge substrates. Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results
and dislocation density measurements are exposed in detail. These characterizations show some striking differences between
structures grown on the two kinds of substrates. Device processing and readout circuit for 128×128 focal-plane array (FPA)
fabrication are described. The electro-optical characteristics of the devices show that devices grown on Ge match those grown
on CdZnTe substrates in terms of responsivity, noise measurements, and operability. 相似文献
15.
Y. Selamet Y. D. Zhou J. Zhao Y. Chang C. R. Becker R. Ashokan C. H. Grein S. Sivananthan 《Journal of Electronic Materials》2004,33(6):503-508
High-quality HgTe/CdTe superlattices (SLs) and device structures incorporating them were grown by molecular beam epitaxy (MBE)
on CdTe/Si substrates. In-situ techniques, such as reflection, high-energy electron diffraction and spectroscopic ellipsometry,
were extensively used to rigorously control the growth parameters. The full width at half maximum (FWHM) of x-ray double-crystal
rocking curves (DCRCs) were 100–150 arcsec, comparable to those of HgCdTe alloys grown on the same type of substrates. The
room-temperature Fourier transform infrared (FTIR) spectrum exhibits two-dimensional features characteristic of SLs. Trial
devices in a p+-n−-n+ format were fabricated by diffusing gold in order to further evaluate the HgTe/CdTe SL performance. Gold diffusion was chosen
to fabricate photovoltaic junctions in order to preserve the structural integrity of the SLs during the device processing.
Though no attempt was made in the current study to optimize the junction properties by Au diffusion, this method has proven
to be very useful for rapid preliminary evaluation. The measured spectral-response and detectivity data indicate the possibility
to fabricate photovoltaic devices on an HgTe/CdTe SL, although further work is needed to optimize the p-n junction fabrication. 相似文献
16.
S. R. Rao S. S. Shintri J. K. Markunas R. N. Jacobs I. B. Bhat 《Journal of Electronic Materials》2011,40(8):1790-1794
High-quality (211)B CdTe buffer layers are required during Hg1−x
Cd
x
Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as
well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor
to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve
full-width at half-maximum of 64 arc-s and a best Everson etch pit density of 3 × 105 cm−2. These values are the best reported for MOVPE-grown (211)B CdTe/Si and match state-of-the-art material grown using molecular-beam
epitaxy. 相似文献
17.
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance 总被引:1,自引:0,他引:1
M. Carmody J. G. Pasko D. Edwall R. Bailey J. Arias S. Cabelli J. Bajaj L. A. Almeida J. H. Dinan M. Groenert A. J. Stoltz Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2005,34(6):832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications
is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon
substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical
challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for
LWIR HgCdTe detectors where the performance can be limited by the high (∼5×106 cm−2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared
(LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe
and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode
and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×106 cm2) typically measured when HgCdTe is grown on silicon substrates. 相似文献
18.
Epitaxial (100) CdTe and ZnTe layers with high crystalline quality have been grown on Si substrates by atmospheric pressure
organometallic vapor phase epitaxy (OMVPE). A thin Ge interfacial layer grown at low temperature was used as a buffer layer
prior to ZnTe and CdTe growth. The layers were characterized by Nomarski optical microscopy and double crystal x-ray diffraction.
Double crystal rocking curves with full width at half maximum of about 110 and 250 arc-sec have been obtained for a 7 μm thick
ZnTe layer and a 4 μm thick CdTe layer, respectively. The results presented demonstrate a novel method ofin-situ Si cleaning step without a high temperature deoxidation process to grow high quality CdTe and ZnTe on Si in a single OMVPE
reactor. 相似文献
19.
S. Gupta J. F. Whitaker S. L. Williamson G. A. Mourou L. Lester K. C. Hwang P. Ho J. Mazurowski J. M. Ballingall 《Journal of Electronic Materials》1993,22(12):1449-1455
GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (≈200°C) exhibits the desired properties of a high-speed
photoconductor: high resistivity, high mobility, high dielectric-breakdown strength, and subpicosecond carrier lifetime. The
unique material properties are related to the excess arsenic content in the MBE grown epilayers. Due to the combination of
the above properties, dramatically improved performance has been observed in photoconductive detectors and correlators using
submicron spaced electrodes. In addition to GaAs, low-temperature growth of InxGa1−xAs alloys also leads to the incorporation of excess arsenic in the layers, and therefore this material system exhibits many
beneficial photoconductor properties as well. In particular, the lattice-mismatched growth of LT-InxGa1−xAs on GaAs appears to be the most suited for high-speed detector applications in the near-infrared wavelength range used in
optical communications. The material issues and the photodetector characteristics required to optimize their performance are
discussed. 相似文献
20.
K. D. Maranowski J. M. Peterson S. M. Johnson J. B. Varesi A. C. Childs R. E. Bornfreund A. A. Buell W. A. Radford T. J. de Lyon J. E. Jensen 《Journal of Electronic Materials》2001,30(6):619-622
HgCdTe p-on-n double layer heterojunctions (DLHJs) for mid-wave infrared (MWIR) detector applications have been grown on 100
mm (4 inch) diameter (211) silicon substrates by molecular beam epitaxy (MBE). The structural quality of these films is excellent,
as demonstrated by x-ray rocking curves with full widths at half maximum (FWHMs) of 80–100 arcsec, and etch pit densities
from 1 106 to 7 106 cm−2. Morphological defect densities for these layers are generally less than 1000 cm−2. Improving Hg flux coverage of the wafer during growth can reduce void defects near the edges of the wafers. Improved tellurium
source designs have resulted in better temporal flux stability and a reduction of the center to edge x-value variation from
9% to only 2%. Photovoltaic MWIR detectors have been fabricated from some of these 100mm wafers, and the devices show performance
at 140 K which is comparable to other MWIR detectors grown on bulk CdZnTe substrates by MBE and by liquid phase epitaxy. 相似文献