共查询到17条相似文献,搜索用时 765 毫秒
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使用Murakami溶液和王水预处理高钴硬质合金刀片,并用直流磁控溅射(DCS)技术在此硬质合金上溅射铝过渡层,在热丝化学气相沉积(HFCVD)设备里沉积金刚石薄膜;分析了金刚石形核机理,并利用SEM以及Raman等方法表征试样。结果表明:与未溅射过渡层的样品相比,在过渡层上的金刚石形核密度更高,金刚石颗粒尺寸更加细小。 相似文献
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负偏压形核法增强金刚石薄膜附着力研究 总被引:5,自引:0,他引:5
在微波等离子体化学气相沉积装置中 ,研究了负偏压形核对金刚石薄膜与WC 6 %硬质合金刀具附着力的影响。结果表明 ,负偏压形核不仅能增加金刚石的核密度 ,还能改善金刚石核在WC晶粒上分布的均匀性 ,增加膜基有效结合面积 ,从而增加金刚石薄膜附着力。因负偏压形核时含碳离子被偏压电场加速 ,对刀具表面产生溅射作用 ,采用铜替代置换钴的刀具 ,使用负偏压形核反而降低薄膜附着力 ;而采用磁控溅射镀铜的刀具 ,使用负偏压形核则能进一步提高金刚石薄膜的附着力。 相似文献
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硬质合金表面化学镀Ni-P-金刚石粉沉积金刚石膜的研究 总被引:2,自引:0,他引:2
利用直流等离子射流装置在以化学镀Ni-P-金刚石粉为过渡层的硬质合金上沉积金刚石薄膜。采用SEM、EDS和X射线衍射仪(XRD)初步探讨了金刚石薄膜的表面形貌和物相组成。结果表明硬质合金刀片表面化学镀Ni-P后沉积金刚石薄膜,金刚石成核密度小、晶形差,难以得到结晶质量良好的金刚石膜。而在硬质合金刀片表面化学镀Ni-P-金刚石粉后沉积金刚石薄膜,成核密度比较高,晶形多为(100),但结合力较差。 相似文献
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以甲烷和氢气为气源,用热丝CVD法,在WC-6%Co的硬质合金基体上沉积金刚石薄膜。研究了基体表面经抛光、腐蚀、脱碳及镀中间层等不同的预处理对金刚石薄膜与基体的随着性的影响。试验结果表明:基体表面经抛光、腐蚀再经脱碳或镀TiN中间层,可改善和提高随着性,金刚石薄膜的形核率沉积速率有所降低;基体表面只经抛光、腐蚀预处理,金刚石薄膜的形核率和沉积速率较高,结晶性好,但随着性较差;采用分段沉积,可以提高 相似文献
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提高CVD金刚石薄膜刀具膜—基附着力的工艺方法评述 总被引:7,自引:2,他引:5
提高金刚石薄膜与硬质合金基底之间的附着力是CVD金刚石薄膜刀具得以推广应用的关键因素。本文介绍了国内外采用CVD法制备金刚石薄膜刀具时提高膜—基附着力的典型工艺方法 ,评述了WC Co基底预处理及沉积工艺对CVD金刚石薄膜与基底之间附着力的影响 相似文献
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Cr过渡层沉积粘附型CVD金刚石膜的机理研究 总被引:3,自引:1,他引:3
研究了电沉积层作为过渡层沉积CVD金刚石膜的工艺,在硬质合金的Cr电沉积层上用热丝法沉积出CVD金刚石膜。利用SEM分析了电沉积层的形貌,利用EPMA分析了H等离子处理后电沉积层的断面,利用SEM和Raman分析了金刚石膜的表面形貌、成分,利用XRD分析了过渡层和CVD金刚石膜的结合面.利用压痕法研究了金刚石薄膜与基体的结合力。结果表明,H等离子处理使得硬质合全与Cr镀层成为冶金结合,提高了电沉积层的结合强度;在Cr过渡层与金刚石膜之间形成的Cr3C2和Cr7C3等碳化物有利于金刚石的成核和膜基结合强度的提高。 相似文献
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提高金刚石薄膜的表面质量和附着力是实现CVD金刚石涂层在耐磨器件领域中广泛应用的关键因素.本文通过优化沉积工艺参数,采用直拉丝化学气相沉积法在WC- Co硬质合金拉丝模内孔表面沉积金刚石薄膜.检测了该涂层的表面形貌、薄膜质量以及表面粗糙度,并把所制备的CVD金刚石薄膜涂层拉丝模具在拉拔铜线材生产线上进行了应用试验,结果... 相似文献
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高性能CVD金刚石薄膜涂层刀具的制备和试验研究 总被引:10,自引:0,他引:10
采用电子增强热丝EACVD法,以WC-Co硬质合金刀具为衬底制备金刚石涂层刀具,研究了提高涂层附着力的衬底预处理新方法,探讨了抑制Co催石墨化作用的有效措施,提出了改善金刚石薄膜表面粗糙度CVD后处理新工艺。研究结果表明,采用了Ar-H2微波等离子体刻蚀脱碳预处理方法对于提高金刚石薄膜涂层的附着力有明显效果,添加适量粘结促进剂,可有效地抑制CVD沉积过程中钴向表层扩散引起的催石墨化作用。采用分步沉积新工艺是减小金刚石薄膜表面粗糙度的有效方法。所制备的高附着力和低粗糙度的金刚石薄膜涂层刀具切削性能明显改善,对实现高效高精度切削加工具有十分重要的意义。 相似文献
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Abrasion resistance of nanostructured and conventional cemented carbides 总被引:10,自引:0,他引:10
The abrasion resistance of nanostructured WC-Co composites, synthesized by a novel spray conversion method, is determined and compared with that of conventional materials. Scratching by diamond indenter and abrasion by hard (diamond), soft (zirconia) and intermediate (SiC) abrasives was investigated. The size of the scratch formed by the diamond is simply related to the hardness of the composite. Plastic deformation, fracture and fragmentation of the WC grains increase with their size. Nanoscale composites show purely ductile scratch formation. Nanocomposites possess an abrasion resistance approximately double that of the most resistant conventional material: this is a higher gain than the increase in hardness which is at most 23%. This large gain is due to a specific grain size effect on abrasion resistance in the case of diamond and SiC abrasive and to a very rapid increase of abrasion resistance with hardness in the case of the softer (SiC and ZrO2) abrasives. The observation of the abraded surfaces of conventional composites reproduced the known mechanisms: plastic deformation and fracture of WC grains by hard abrasives; removal of binder phase and fall-out of WC by soft abrasives. Magnetic fields from the ferromagnetic Co prevent the observation of abrasion mechanisms in the very fine-structured nanocomposites. 相似文献
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The purpose of this study is to synthesize diamond onto Si, Cu, and Fe (SUS632J2) substrates and to analyze the effect of carbon diffusion on their surfaces. Diamond was synthesized using the in-liquid microwave plasma chemical vapor deposition (IL-MPCVD) as a novel method for synthesizing diamond on various base materials. The IL-MPCVD method is superior one due to its efficiency in terms of cost, space and speed as compared to a conventional gas phase microwave plasma CVD (MPCVD). Microwaves of 2.45 GHz generated plasma in a solution which was comprised of methanol: ethanol (M:E = 97:3). Evaluation of deposited diamond films was done by a Scanning Electron Microscope (SEM) and Raman spectroscopy. Results shows that the IL-MPCVD method can form diamond films on Cu, Si and Fe substrates. The minimum time of film formation of Cu, Si and Fe are 2.5, 3.5 and 5 min, respectively. The material that forms carbide layers such as Si is a better substrate to form diamond film by the IL-MPCVD than other metal substrates such as Cu and Fe. Synthesizing diamond directly on the Fe substrate results in poor quality layers. The effect of carbon diffusion influences diamond film nucleation and diamond growth. In order to alleviate the carbon diffusion and improve the quality of the diamond film on the Fe substrate, Si has been sputtered on the Fe substrate as an interlayer. It is found that the diamond film can be formed on a Fe substrate using a Si interlayer and that heat treatment and thickening the interlayer improve its quality. 相似文献
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为了探讨频率对硬质合金基体上TiN/TiSiN复合涂层组织结构及性能的影响,选择了几个不同频率来制备TiN/TiSiN复合涂层。研究结果表明:不同频率制备TiN/TiSiN复合涂层的表面形貌都呈圆盘状颗粒,频率在30kHz-70kHz变化时,复合涂层颗粒尺寸随频率的增加而增大,均匀性随频率的增加而变差;复合涂层频率在30kHz-70kHz变化时,TiN始终在(200)方向上择优取向;硬质合金基体上,TiN/TiSiN复合涂层比单一TiN涂层的硬度提高更大,从1973 HV0.05增加到3417 HV0.05;30kHz时TiN/TiSiN复合涂层的硬度、涂层结合力和耐磨性能明显优于其他两种TiN/TiSiN复合涂层。故在硬质合金基体上,30kHz制备的TiN/TiSiN复合涂层工艺最佳。 相似文献