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1.
A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate in a wide-band frequency range, a switched-capacitors bank LC tank voltage-controlled oscillator (VCO) and an adaptive frequency calibration (AFC) technique are used. The measured VCO tuning range is as wide as 600 MHz (40%) from 1.15 to 1.75 GHz with a tuning sensitivity from 5.2 to 17.5 MHz/V. A 3-bit fourth-order /spl Sigma/-/spl Delta/ modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz as well as agile switching time. The experimental results show -80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and -129 dBc/Hz out-of-band phase noise at 400-kHz offset frequency. The fractional spurious is less than -70 dBc/Hz at 300-kHz offset frequency and the reference spur is -75 dBc/Hz. The lock time is less than 150 /spl mu/s. The proposed synthesizer consumes 19.5 mA from a single 2.8-V supply voltage and meets the requirements of GSM/GPRS/WCDMA applications.  相似文献   

2.
This paper presents the design and experimental results of a low-power 300–960 MHz I/Q signal generator for low-IF receivers. The circuit is based on phase-tunable dividers and uses delay-locked loops, which provide phase accuracy for the quadrature signals as well as low-sensitivity of the phase error against temperature and power supply variations. Thanks to the adopted technique, the phase error can be further reduced by trimming the reference voltage of the delay-locked loops through a calibration digital word, which can be stored in a non-volatile memory during manufacturing. The I/Q generator exhibits an absolute phase error before calibration that is lower than 1.5°. The I/Q phase drift due to temperature variations from ?40 to 85 °C and power supply variations from 1.1 to 1.3 V is 0.3° and 0.2°, respectively. By dividing the overall frequency range into four 165-MHz wide sub-bands and using only four 5-bit calibration words, the I/Q phase variation with respect to frequency, temperature, and power supply is lower than 1° in the 300–960 MHz operating band. The I/Q generator is implemented in a 90-nm CMOS technology and exhibits a current consumption as low as 0.5 mA.  相似文献   

3.
A CMOS analog baseband transceiver with a 13-bit, 180 MSPS pipelined ADC and dual 12-bit, 180 MSPS current-steering DACs is presented. The ADC is implemented without a dedicated track-and-hold stage, utilizes a front-end 2.5-bit stage with matched MDAC/comparator tracking circuits, and demonstrates an ENOB of 10.6 bits at 15 MHz and 9.7 bits at 100 MHz, employing a low-jitter delay-lock loop for its phasing. The dual I/Q DACs show over 62 dB SFDR over the Nyquist band by utilizing a dynamic linearity enhancing architecture.  相似文献   

4.
A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35μm SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +/- 5% bandwidth accuracy, 30 nV/Hz1/2 input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f0 = 20 MHz) from 5 V supply, and occupy 0.5 mm2.  相似文献   

5.
A multi-band frequency synthesizer for In-phase and Quadrature (I/Q) LO signal generation in Digital TV tuners is presented. Using divisor numbers other than powers of 2 (2 n ) for quadrature generation, reduces the required frequency range of the VCO, hence the number of VCO circuits, in multi-band frequency synthesizers. In the proposed synthesizer, VHF, UHF and L-band frequencies are covered with only one VCO. This is achieved by using a novel divide-by-3 circuit which produces precise I/Q LO signals. The VCO tuning range in this design is 2,400–3,632 MHz which is covered by a 6-bit switched-capacitor bank. A fast adaptive frequency calibration block selects the closest VCO frequency to the target frequency by setting the coarse-tuning code prior to the start of phase lock. A programmable charge pump is used to reduce variations in PLL characteristics over the frequency range. The synthesizer has been fabricated in a 0.18 μm CMOS technology and the die area is 1.7 × 1.6 mm2. It consumes 27 mA from a 1.8 V power supply. Measurement results show operation of the proposed divide-by-3 circuit over the entire VCO frequency range. The synthesizer quadrature output phase noise for UHF and VHF bands is <−131dBc/Hz at 1.45 MHz offset.  相似文献   

6.
A complex analog-to-digital converter (ADC) intended for digital intermediate frequency (IF) receiver applications digitizes analog signals at IFs with excellent power/bandwidth efficiency. However, it is vulnerable to mismatches between its in-phase and quadrature (I/Q) paths that can dramatically degrade its performance. The proposed solution mitigates I/Q mismatch effects using a complex sigma-delta (SigmaDelta) modulator cascaded with 9-bit pipeline converters in each of the I and Q paths. The quantization noise of the first stage complex modulator is eliminated using an adaptive scheme to calibrate finite-impulse response digital filters in the digital noise-cancellation logic block. Although low-pass SigmaDelta cascade ADCs are widely used because of their inherent stability and high-order noise shaping, the complex bandpass cascade architecture introduced herein maintains these advantages and doubles the noise shaping bandwidth. Digital calibration also reduces the effects of analog circuit limitations such as finite operational amplifier gain, which enables high performance and low power consumption with high-speed deep-submicrometer CMOS technology. Behavioral simulations of the complex SigmaDelta/pipeline cascade bandpass ADC using the adaptive digital calibration algorithm predict a signal-to-noise ratio (SNR) of 78 dB over a 20-MHz signal bandwidth at a sampling rate of 160 MHz in the presence of a 1% I/Q mismatch.  相似文献   

7.
A 14-bit intrinsic accuracy Q2 random walk CMOS DAC   总被引:1,自引:0,他引:1  
In this paper, a 14-bit, 150-MSamples/s current steering digital-to-analog converter (DAC) is presented. It uses the novel Q2 random walk switching scheme to obtain full 14-bit accuracy without trimming or tuning. The measured integral and differential nonlinearity performances are 0.3 and 0.2 LSB, respectively; the spurious-free dynamic range is 84 dB at 500 kHz and 61 dB at 5 MHz. Running from a single 2.7-V power supply, it has a power consumption of 70 mW for an input signal of 500 kHz and 300 mW for an input signal of 15 MHz. The DAC has been integrated in a standard digital single-poly, triple-metal 0.5-μm CMOS process. The die area is 13.1 mm2  相似文献   

8.
陈慧芳  王显泰  陈晓娟  罗卫军  刘新宇 《半导体学报》2010,31(7):074012-074012-4
A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...  相似文献   

9.
基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器(VCO)。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。  相似文献   

10.
In this paper a dual operating mode 8-bit, 1.1-V pipeline ADC for Gigabit Ethernet applications is presented. In the two operating modes, the ADC features different sampling frequency (125 and 250 MHz) and power consumption (9.4 and 22.8 mW). Considering a signal bandwidth of 60 MHz in both operating modes, as required by the Gigabit Ethernet standard, the ADC achieves a SNDR always larger than 39.4 dB at 125 MHz and 38.7 dB at 250 MHz (6.25-bit and 6.13-bit ENOB, respectively), with a FoM of 0.84 pJ/conv at 125 MHz and 2.2 pJ/conv at 250 MHz. The ENOB achieved is mainly limited by clock jitter. The ADC is fabricated with a 90-nm CMOS technology, with an active area of 1.25 × 0.65 mm2.  相似文献   

11.
This paper describes a 4 GHz fractional-N frequency synthesizer for a 3.1 to 5 GHz IR-UWB transceiver.Designed in a 0.18μm mixed-signal & RF 1P6M CMOS process, the operating range of the synthesizer is 3.74 to 4.44 GHz. By using an 18-bit third-order ∑-△ modulator, the synthesizer achieves a frequency resolution of 15 Hz when the reference frequency is 20 MHz. The measured amplitude mismatch and phase error between I and Q signals are less than 0.1 dB and 0.8° respectively. The measured phase noise is -116 dBc/Hz at 3 MHz offset for a 4 GHz output.Measured spurious tones are lower than -60 dBc. The settling time is within 80 μs. The core circuit conupSigmaes only 38.2 mW from a 1.8 V power supply.  相似文献   

12.
A fully symmetrical integrated quadrature LC oscillator with a wide tuning range of 1.2GHz is presented. The quadrature voltage-controlled oscillator (QVCO) is implemented using a symmetrical coupling method which has been used to produce the large tuning range with a low control voltage and to achieve good phase noise performance in 0.18/spl mu/m complementary metal oxide semiconductor technology. The measured phase noise at 1MHz offset from the center frequency (5.5GHz) is -115 dBc/Hz. The QVCO draws 3.2mA from a 1.8V supply. The equivalent phase error between I and Q signal was at most 0.5/spl deg/.  相似文献   

13.
A 16-bit digitally controlled BiCMOS ring oscillator (DCO) is described. This BiCMOS DCO design provides improved frequency stability under thermal fluctuations. Simulations of a 5-stage DCO using 1μm BiCMOS process parameters achieved a controllable frequency range of 90-640MHz with a linear/quasi-linear range of around 300MHz. A tiny test chip was fabricated using MOSIS Orbit 2μm low-cost analogue CMOS process technology that provides a lateral NPN bipolar device option. Monotone frequency gain (frequency vs control-word transfer function) with fine stepping (tuning) over several kHz was verified experimentally, thus auguring the prospect of accurate frequency lock in an all-digital phase-locked loop (ADPLL) application. Worstcase jitter due to digital control transitions at pathological control-word boundaries for the BiCMOS DCO was observed to be less than 50 ps. This BiCMOS design would thus provide performance enhancement in PLL applications such as clock recovery and frequency synthesis.  相似文献   

14.
A fully integrated CMOS phase-locked loop (PLL) which can synthesize a quadrature output frequency of 7.656 GHz is presented.The proposed PLL can be employed as a building block for an MB-OFDM UWB frequency synthesizer.To achieve fast loop settling,integer-N architecture operating with 66 MHz reference frequency and wideband QVCO are implemented.I/Q carriers are generated by two bottom-series cross-coupled LC VCOs.Realized in 0.18μm CMOS technology,this PLL consumes 16 mA current (including buffers) from a 1.5 V supply and the phase noise is-109.6 dBc/Hz at 1 MHz offset.The measured oscillation frequency shows that the QVCO has a range of 6.95 to 8.73 GHz.The core circuit occupies an area of 1×0.5 mm2.  相似文献   

15.
A 2.1-GHz 1.3-V 5-mW fully integrated Q-enhancement LC bandpass biquad programmable in f/sub o/, Q, and peak gain is implemented in 0.35-/spl mu/m standard CMOS technology. The filter uses a resonator built with spiral inductors and inversion-mode pMOS capacitors that provide frequency tuning. The Q tuning is through an adjustable negative-conductance generator, whereas the peak gain is tuned through an input G/sub m/ stage. Noise and nonlinearity analyses presented demonstrate the design tradeoffs involved. Measured frequency tuning range around 2.1 GHz is 13%. Spiral inductors with Q/sub o/ of 2 at 2.1 GHz limit the spurious-free dynamic range (SFDR) at 31-34 dB within the frequency tuning range. Measurements show that the peak gain can be tuned within a range of around two octaves. The filter sinks 4 mA from a 1.3-V supply providing a Q of 40 at 2.19 GHz with a 1-dB compression point dynamic range of 35 dB. The circuit operates with supply voltages ranging from 1.2 to 3 V. The silicon area is 0.1 mm/sup 2/.  相似文献   

16.
A pseudo-exponential capacitor bank structure is proposed to implement a wide-band CMOS LC voltage-controlled oscillator (VCO) with linearized coarse tuning characteristics. An octave bandwidth VCO employing the proposed 6-bit pseudo-exponential capacitor bank structure has been realized in 0.18-mum CMOS. Compared to a conventional VCO employing a binary weighted capacitor bank, the proposed VCO has considerably reduced the variations of the VCO gain (K VCO) and the frequency step per a capacitor bank code (f step/code) by 2.7 and 2.1 times, respectively, across the tuning range of 924-1850 MHz. Measurement results have also shown that the VCO provides the phase noise of - 127.1 dBc/Hz at 1-MHz offset for 1.752-GHz output frequency while dissipating 6 mA from a 1.8-V supply.  相似文献   

17.
A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.  相似文献   

18.
A feedback loop employing the change in discharge impedance with output power is used to stabilize the frequency of a CO2waveguide laser. The relatively high operating pressure of the laser combined with a zero offset feature in the feedback loop allows continuous tuning of the stabilized frequency over a 300-400 MHz range.  相似文献   

19.
A technique for setting the absolute frequency of a 1.5-μm two-section distributed Bragg reflector (DBR) laser using an Er:YAG optical filter as a frequency discriminator is described. The absolute frequency of the laser was controlled with an accuracy better than 300 MHz over a tuning range of several hundred gigahertz. The frequency drift with laser temperature was -130 MHz/°C, and the tuning rate with current in the active region was 40 MHz/mA  相似文献   

20.
Quadrature sampling of intermediate frequency (IF) signals is subject to the well-known problem of gain and phase mismatches between the in-phase (I) and quadrature (Q) channels. This paper presents an IF-input quadrature-sampling switched-capacitor (SC) /spl Sigma//spl Delta/ modulator that circumvents the I/Q mismatch problem by time-sharing between the I and Q channels the critical circuit components, namely, the sampling capacitor and the capacitor of the first-stage feedback digital-to-analog converter (DAC). In addition, a clocking scheme that is insensitive to I/Q phase imbalance is used. A third-order single-loop 1-bit low-pass modulator has been designed and fabricated in a 0.35-/spl mu/m CMOS process with an active area of 0.57mm/sup 2/. The experimental results show that the modulator achieves an image-rejection ratio (IRR) of greater than 75dB throughout a 200-kHz signal bandwidth.  相似文献   

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