Sensitized anti-stokes luminescence centers in AgCl crystals

In the AgCl microcrystals with adsorbed methylene blue dye molecules, sensitized anti-Stokes luminescence centers formed as a result of a photostimulated low-temperature (77 K) process are observed. The emission is recorded on excitation of the samples by radiation with the flux density 10¹⁴?10¹⁵ photon cm^?2 s^?1 in the spectral range 620–750 nm corresponding to optical absorption in the adsorbed dye molecules and adsorbed Ag₁, Ag₂, and Ag₃ clusters. It is shown that the anti-Stokes luminescence centers formed by photo-stimulation present (adsorbed dye molecule)—(silver subnanocluster) hybrid nanostructures, in which the bonding between the components is weak but sufficient to provide the possibility for two-photon interband transitions that occur due to transfer of the electron’s excitation energy from the dye molecule to the silver cluster with subsequent photoionization of the cluster.     

A DLTS analysis of electron and hole traps in VPE grown n-GaAs using schottky barrier diodes

Capacitance lock-in amplifier deep level transient spectroscopy (DLTS) using Schottky barrier diodes (SBD’s) was used to characterize the electron and hole traps in VPEn-GaAs (N_D - N_A = 1 - 2 x 10¹⁵/cm³) layers grown on n⁺ (10¹⁸/cm³) GaAs substrates. The main electron traps observed were the EL2 atE _c - 0.81 eV and a level atE _c - 0.48 eV. The use of large forward bias electrical injection pulses (and no optical excitation) facilitated the detection of hole traps, of which the defect with an energy level atE _v + 0.42 eV, speculated to be Cu-related, was present in the highest concentration.     

Electroluminescence from porous silicon in the cathodic reduction of persulfate ions: Degree of reversibility of the tuning effect

The temporal evolution of the spectra of cathodic electroluminescence from porous silicon in an electrolyte containing persulfate ions S₂O ₈ ^2? was studied in the galvanostatic mode. It was shown that irreversible changes in luminescence properties of porous silicon occur under cathodic polarization. These changes are manifested in a decrease in the signal intensity and a long-wavelength shift of the electroluminescence (EL) spectrum when the substrate potential remains virtually unchanged (pseudo-tuning). The irreversibility of the change in luminescence parameters is related to a concurrent electrochemical oxidation of the surface of porous silicon, which hinders the bipolar injection of carriers into luminescence-active crystallites. The results obtained suggest that the degradation phenomena observed under cathodic polarization are due to those same processes which are responsible for EL excitation, which casts doubt on the interpretation of the tuning effect, known in the literature, as a consequence of a purely electronic process in porous silicon.     

Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells

The photoelectric properties of thin-film ZnO/CdS/Cu(In,Ga)Se₂ solar cells were studied by polarization photoactive absorption spectroscopy. It was shown that the thin-film solar cells have a high efficiency relative to the intensity of unpolarized radiation in the photon energy range from 1.2 to 2.5 eV. The induced photopleochroism coefficient P _I increases with the angle of incidence of the incident radiation as P _I ∼θ ² and at 70° it reaches 17–20% with photon energy 1.3 eV. Oscillations of the photopleochroism were also observed. These results are discussed taking into account the antireflection effect. The results obtained by us make it possible to use such solar cells as wide-band photosensors for linearly polarized radiation and for monitoring the production of high-efficiency, thin-film solar cells based on ternary semiconductors. Fiz. Tekh. Poluprovodn. 31, 806–810 (July 1997)     

Reversible electrical properties of LEC GaAs

Undoped, low-pressure, liquid-encapsulated Czochralski GaAs can be reversibly changed from conducting (ρ ∼ 1Ω-cm) to semi-insulating (ρ ∼ 10⁷Ω-cm) by either slow or fast cooling, respectively, after a 5 hr, 950° C soak in an evacuated quartz ampoule. The semi-insulating wafers are very uniform and lead to tight threshold-voltage control in direct-implant MESFET’s. We have studied crystals in both states by temperature-dependent Hall effect, photoluminescence, IR absorption, mass spectroscopy, and DLTS. It is shown that donor and acceptor concentrations are typically more than an order of magnitude greater than the C and Si concentrations, which are both less than 3 × 10¹⁴ cm⁻³. The EL2 concentration remains relatively constant at about 1.0 × 10¹⁶ cm⁻³. Thus, the normal EL2-Si-C compensation model does not apply. The most likely explanation for the reversibility involves a delicate balance between native-defect donors and acceptors in equilibrium at 950° C, but with the donors dominating after a slow cool, and the acceptors after a fast cool. A consistent model includes a dominant donor at E_c 0.13eV, probably V_As – As_Ga, and a dominant acceptor at E_v + 0.07eV, probably V_Ga Ga_As. In this model, vacancy motion is very important during the slow cool. Such processes must be strongly considered in the growth of bulk, high-purity GaAs.     

NIR‐II Light Activated Photosensitizer with Aggregation‐Induced Emission for Precise and Efficient Two‐Photon Photodynamic Cancer Cell Ablation

Near infrared (NIR) light excitable photosensitizers are highly desirable for photodynamic therapy with deep penetration. Herein, a NIR‐II light (1200 nm) activated photosensitizer TQ‐BTPE is designed with aggregation‐induced singlet oxygen (¹O₂) generation for two‐photon photodynamic cancer cell ablation. TQ‐BTPE shows good two‐photon absorption and bright aggregation‐induced NIR‐I emission upon NIR‐II laser excitation. The ¹O₂ produced by TQ‐BTPE in an aqueous medium is much more efficient than that of commercial photosensitizer Ce6 under white light irradiation. Upon NIR‐II excitation, the two‐photon photosensitization of TQ‐BTPE is sevenfold higher than that of Ce6. The TQ‐BTPE molecules internalized by HeLa cells are mostly located in lysosomes as small aggregate dots with homogeneous distribution inside the cells, which favors efficient photodynamic cell ablation. The two‐photon photosensitization of TQ‐BTPE upon NIR‐I and NIR‐II excitation shows higher ¹O₂ generation efficiency than under NIR‐I excitation owing to the larger two‐photon absorption cross section at 920 nm. However, NIR‐II light exhibits better biological tissue penetration capability after passing through a fresh pork tissue, which facilitates stronger two‐photon photosensitization and better cancer cell ablation performance. This work highlights the promise of NIR‐II light excitable photosensitizers for deep‐tissue photodynamic therapy.     

Does Excess Energy Assist Photogeneration in an Organic Low‐Bandgap Solar Cell?

The field dependence of the photocurrent in a bilayer assembly is measured with the aim to clarify the role of excess photon energy in an organic solar cell comprising a polymeric donor and an acceptor. Upon optical excitation of the donor an electron is transferred to the acceptor forming a Coulomb‐bound electron–hole pair. Since the subsequent escape is a field assisted process it follows that photogeneration saturates at higher electric fields, the saturation field being a measure of the separation of the electron–hole pair. Using the low bandgap polymers, PCDTBT and PCPDTBT, as donors and C₆₀ as acceptor in a bilayer assembly it is found that the saturation field decreases when the photon energy is roughly 0.5 eV above the S₁–S₀ 0–0 transition of the donor. This translates into an increase of the size of the electron‐hole‐pair up to about 13 nm which is close to the Coulomb capture radius. This increase correlates with the onset of higher electronic states that have a highly delocalized character, as confirmed by quantum‐chemical calculations. This demonstrates that accessing higher electronic states does favor photogeneration yet excess vibrational energy plays no role. Experiments on intrinsic photogeneration in donor photodiodes without acceptors support this reasoning.     

A Guideline to Mitigate Interfacial Degradation Processes in Solid-State Batteries Caused by Cross Diffusion

Diffusion of transition metals across the cathode–electrolyte interface is identified as a key challenge for the practical realization of solid-state batteries. This is related to the formation of highly resistive interphases impeding the charge transport across the materials. Herein, the hypothesis that formation of interphases is associated with the incorporation of Co into the Li₇La₃Zr₂O₁₂ lattice representing the starting point of a cascade of degradation processes is investigated. It is shown that Co incorporates into the garnet structure preferably four-fold coordinated as Co²⁺ or Co³⁺ depending on oxygen fugacity. The solubility limit of Co is determined to be around 0.16 per formula unit, whereby concentrations beyond this limit causes a cubic-to-tetragonal phase transition. Moreover, the temperature-dependent Co diffusion coefficient is determined, for example, D_{700 °C} = 9.46 × 10⁻¹⁴ cm² s⁻¹ and an activation energy E_a = 1.65 eV, suggesting that detrimental cross diffusion will take place at any relevant process condition. Additionally, the optimal protective Al₂O₃ coating thickness for relevant temperatures is studied, which allows to create a process diagram to mitigate any degradation with a minimum compromise on electrochemical performance. This study provides a tool to optimize processing conditions toward developing high energy density solid-state batteries.     

Yellow and Red Electrophosphors Based on Linkage Isomers of Phenylisoquinolinyliridium Complexes: Distinct Differences in Photophysical and Electroluminescence Properties

We report the synthesis and organic light‐emitting devices (OLEDs) made from a series of 1‐phenyl‐ and 3‐phenylisoquinolinyliridium complexes in which the phenyl group is linked to the C1 and C3 carbons of isoquinoline, respectively. These linkage isomers show distinct differences in their photophysical and electroluminescence (EL) properties, including the magnitude of phosphorescent lifetimes and photoluminescence (PL) and EL emission wavelengths, as well as the phenomenon of triplet–triplet (T–T) annihilation. Complexes of these two families show a strong absorption band in the region 440–490 nm assignable to spin‐forbidden ³MLCT (metal–ligand charge‐transfer) bands. The extinction coefficients of these bands are similar to those of spin‐allowed ¹MLCT bands, indicative of an anomalously strong spin–orbital coupling. Upon excitation, 1‐phenylisoquinolinyliridium complexes exhibit a single phosphorescent emission band in the red region (595–631 nm). All of these red phosphors show outstanding EL performance with negligible T–T annihilation because of short phosphorescent lifetimes (1.04–2.46 μs in CH₂Cl₂) and good emission quantum yields. One representative, [Ir(5‐f‐1piq)₂(acac)] (acac = acetylacetonate) ( 3 ) (5‐f‐1piqH = 5‐fluoro‐1‐phenylisoquinoline), is not only the brightest at low voltages (1883 cd m^–2 at 7.1 V; 8320 cd m^–2 at 9.0 V) but also shows a η_ext value of. 6.50 % at high current (J = 400 mA cm^–2). The maximum brightness is 38 218 cd m^–2 (x = 0.68, y = 0.31) with the full width at half maximum (FWHM) only 50 nm at 8 V. In contrast, 3‐phenylisoquinolinyliridium complexes show phosphorescent emissions in the yellow region (534–562 nm) but with a long phosphorescent lifetime (3.90–15.6 μs in CH₂Cl₂)_. Most of these yellow phosphors suffer T–T annihilation in the EL performance. The exception is [Ir(3‐piq)₂(acac)] ( 5 ) (3‐piqH = 3‐phenylisoquinoline), which has a relatively short lifetime 3.90 μs in CH₂Cl₂. Complex 5 achieves an external efficiency (η_ext) value of 5.27 % at J = 20 mA cm^–2 and maintains a η_ext value of 3.58 at J = 400 mA cm^–2 with a maximum brightness of 65 448 cd m^–2 (x = 0.49, y = 0.51).     

Improved Efficiency of Single‐Layer Polymer Light‐Emitting Devices with Poly(vinylcarbazole) Doubly Doped with Phosphorescent and Fluorescent Dyes as the Emitting Layer

We demonstrate novel organic light‐emitting diode (LED) materials that contain a green phosphorescent dye (dmbpy)Re(CO)₃Cl (dmbpy = 4,4′‐dimethyl‐2,2′‐bipyridine), and a red fluorescent dye 4‐dicyanomethylene‐6‐(p‐dimethylaminostyryl)‐2‐methyl‐4H‐pyran (DCM) as dopants and polyvinylcarbazole (PVK) as the host. The photoluminescence (PL) and electroluminescence (EL) properties of these complex materials were studied. The energy transfer efficiency from PVK host to DCM is increased by the (dmbpy)Re(CO)₃Cl co‐dopant, which has an emission energy between that of PVK and DCM. The (dmbpy)Re(CO)₃Cl, which emits a long‐lived phosphorescence, is used as an energy coupler, providing the possibility to harvest both singlet and triplet energy in the devices. The pure red emission from DCM was observed from PL and EL spectra of (dmbpy)Re(CO)₃‐Cl(> 2.0 wt.‐%):DCM(> 0.5 wt. %) doped PVK films, demonstrating an efficient energy transfer from PVK and (dmbpy)Re(CO)₃‐Cl to DCM. By optimizing the concentration of DCM and (dmbpy)Re(CO)₃Cl in PVK, a maximum EL quantum efficiency of 0.42 cd A^–1 at a current density of 9.5 mA cm^–2 was obtained. The EL quantum efficiency of the doubly doped device is significantly enhanced in comparison with both a DCM‐only doped PVK device and a DCM‐doped PVK device with the green fluorescent dye Alq₃ as co‐dopant. The improvement in the operating characteristics of the phosphorescent and fluorescent dye doubly doped device is attributed to efficient energy transfer in the system, in which both triplet and singlet excitons are used for resultant emission in the polymer device.     

Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-SnGa(SiGa) complexes in GaAs produced as a result of resonant polarized excitation

The excitation and induced polarization spectra of the photoluminescence band with the maximum near a photon energy of 1.18 eV in Sn-or Si-doped n-GaAs with an electron density ∼ 10¹⁸ cm⁻³ are measured at various temperatures. It is shown that the temperature dependence of the induced polarization of this photoluminescence due to V _GaSn_Ga or V _GaSi_Ga complexes in the temperature range 77–230K is close to the corresponding dependence for V _GaTe_As complexes. In addition, a slight decrease in the induced polarization as the temperature is increased, not observed for V _GaTe_As complexes, is observed in the range 77–125 K for the investigated complexes. It is hypothesized that the difference is attributable to the existence of excited configurations in the absorbing and emitting states of the V _GaSn_Ga and V _GaSi_Ga complexes, where the populations of these configurations in the absorbing state increase with the temperature. The difference between the total energies of the excited and ground configurations of the absorbing state is 10–20 meV for V _GaSn_Ga complexes and 15–30 meV for V _GaSi_Ga complexes. Fiz. Tekh. Poluprovodn. 33, 42–46 (January 1999)     

A Quantum‐Splitting Phosphor Exploiting the Energy Transfer from Anion Excitons to Tb3+ in CaSO4:Tb,Na

Wide‐bandgap materials doped with rare‐earth ions are currently of great interest as new vacuum ultraviolet (VUV) phosphors for lighting and displays. This paper reports the development of a highly sensitive green phosphor, CaSO₄:Tb,Na, which exhibits a quantum efficiency higher than 100 % by exploiting the energy‐transfer mechanism from anion excitons to the activator ions, Tb³⁺. The VUV excitation spectra of CaSO₄:Tb³⁺ with Na⁺ as a charge compensator show two prominent excitation bands at 147 and 216 nm. The former band is attributed to the charge‐transfer excitations within SO₄^2– complexes while the latter was assigned to the 4f⁸ → 4f⁷5d transitions on Tb³⁺. The energy‐transfer mechanism from anion excitons to Tb³⁺ strongly raises the possibility of two‐photon emission via a second‐order down‐conversion under the VUV excitation, which is basically a new approach in the goal of achieving a quantum‐splitting phosphor.     

Enhanced cooperative near-infrared quantum cutting in Pr3+-Yb3+ co-doped phosphate glass

Pr3+and Yb3+co-doped phosphate glasses are prepared to study their optical properties.Excitation and emission spectra and decay curves are used to characterize their luminescence.We demonstrate that upon excitation of Pr3+ion with one high energy photon at 470 nm,two near-infrared(NIR)photons are emitted at 950-1100 nm(Yb3+:2F 5/2 →2F 7/2)through an efficient cooperative energy transfer(CET)from Pr3+to Yb3+.The maximum energy transfer efficiency(ETE)and the corresponding quantum efficiency approach up to 90.17%and 190.17%,respectively.The glass materials might find potential application for improving the efficiency of silicon-based solar cells.     

Photoluminescence of CuGaTeAs and CuGaSnGa complexes in n-GaAs under resonance polarized excitation

Photoluminescence (PL) of n-type GaAs:Te:Cu and GaAs:Sn:Cu with an electron density of about 10¹⁸ cm^?3 was studied at 77 K. A broad band with a peak at the photon energy near 1.30 eV (GaAs:Te:Cu) or 1.27 eV (GaAs:Sn:Cu) was dominant in the PL spectrum under interband excitation. This band arose from the recombination of electrons with holes trapped by Cu_GaTe_As or Cu_GaSn_Ga complexes. It has been found that the low-energy edge of the excitation spectrum of this PL band at photon energies below ～1.4 eV is controlled by the optical ejection of electrons from a complex into the conduction band or to a shallow excited state. The PL polarization factors upon excitation by polarized light from this spectral range suggest that the complexes have no additional distortions caused by an interaction of a hole bound at the center in the light-emitting state with local phonons of low symmetry. This feature makes Cu_GaTe_As and Cu_GaSn_Ga complexes different from those with the Ga vacancy (V _Ga) instead of Cu_Ga. The dissimilarity arises from the difference in the intensity of interaction of a hole localized at the orbital of an isolated deep-level acceptor in the state corresponding to its preemission state in the complex (Cu _Ga ^? and V _Ga ^2? ) with low-symmetry vibrations of atoms. The perturbation of the hole orbital induced by the donor in the complex practically does not affect this interaction.     

Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation

Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×10²⁰ and 1×10²¹ cm⁻³, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si_1−xGe_x and Si_1−yC_y layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54 μm associated with the intra-4f transition of Er³⁺ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p–i–n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×10²⁰ cm⁻³ we find that Er/O ratios of 1 : 2 or 1 : 4 give higher intensity than 1 : 1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400–575°C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed.     

Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation

Distribution of interface states at the emitter–base heterojunctions in heterostructure bipolar transistors (HBTs) is characterized by using current–voltage characteristics using sub-bandgap photonic excitation. Sub-bandgap photonic source with a photon energy E_ph which is less than the energy bandgap E_g (E_g,GaAs = 1.42, E_g,AlGaAs = 1.76 eV) of emitter, base, and collector of HBTs, is employed for exclusive excitation of carriers only from the interface states in the photo-responsive energy range at emitter–base heterointerface. The proposed method is applied to an Al_0.3Ga_0.7As/GaAs HBT (A_E = W_E × L_E = 250 × 100 μm²) with E_ph = 0.943 eV and P_opt = 3 mW. Extracted interface trap density D_it was observed to be D_it,max  4.2 × 10¹² eV⁻¹ cm⁻² at emitter–base heterointerface.     

A Europium Complex With Excellent Two‐Photon‐Sensitized Luminescence Properties

We report the synthesis and excellent two‐photon‐sensitized luminescence properties of a new complex [Eu(tta)₃dmbpt] (tta = henoyltrifluoroacetonate; dmbpt = 2‐(N,N‐diethyl‐2,6‐dimethylanilin‐4‐yl)‐4,6‐bis(3,5‐dimethylpyrazol‐1‐yl)‐1,3,5‐triazine) that exhibits the highest efficiency of lanthanide luminescence when excited by near‐infrared (NIR) laser pulses (action cross section of two‐photon‐excited fluorescence δ × Φ_F: 85 GM at 812 nm and 56 GM at 842 nm; 1 GM = 10^–50 cm⁴ s photon^–1 molecule^–1). Compared to a previously reported [Eu(tta)₃dpbt] complex, (dpbt = 2‐(N,N‐diethylanilin‐4‐yl)‐4,6‐bis(3,5‐dimethylpyrazol‐1‐yl)‐1,3,5‐triazine), [Eu(tta)₃dmbpt] has two excess methyl groups at the 2,6‐positions of the phenyl ring. Crystallographic data of dmbpt show that the 2,6‐dimethyl substitutes bring about a significant twist in the conformation of the diethylamino group compared to that in dpbt, which severely influences the conjugation in the ground state between the electron lone pair of N in the –N(CH₂–)₂ moiety and the aromatic electron system in dmbpt. The large two‐photon absorption (TPA) cross section of dmbpt is mainly derived from its large static dipole moment difference between the S₀ and the S₁ states, which is partly responsible for the high capability of two‐photon‐sensitized luminescence of [Eu(tta)₃dmbpt]. The broader two‐ and single‐photon excitation windows and the superior two‐photon‐sensitized luminescent properties in the long‐wavelength NIR region of [Eu(tta)₃dmbpt] compared to [Eu(tta)₃dpbt] are also explained according to the calculated results and twisted structure.     

Optical absorption in PbGa2Se4 single crystals

Optical measurements are performed in a PbGa2Se4 single crystal. The nature of the optical transitions is determined in the interval of photon energies 2.24–2.46 eV in the temperature range 77–300 K. It is shown that indirect and direct optical transitions take place in the energy intervals 2.28–2.35 eV and 2.35–2.46 eV, corresponding to E _gi =2.228 eV and E _gd =2.35 eV, respectively, at 300 K. The temperature coefficients of E _gi and E _gd are equal to −0.6×10⁻⁴ eV/K and −4.75×10⁻⁴ eV/K, respectively. Fiz. Tekh. Poluprovodn. 33, 39–41 (January 1999)     

Structural and Luminescent Properties of SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>(Si) Nanocomposite Films

With a view to creating Si LEDs, the structural and luminescent properties of SiO _x N _y films containing Si nanocrystals in the SiO _x N _y matrix are studied experimentally. It is found that the film structure (nanocrystal size and concentration, the presence of an amorphous phase, etc.) and the spectrum and intensity of photoluminescence (PL) and electroluminescence (EL) are strongly dependent on the Si stoichiometric excess δ and annealing conditions. At δ≈ 10%, unannealed films are amorphous and contain Si clusters of size < 2 nm, as deduced from the TEM and microdiffraction data obtained. Annealing at 800–1000°C for 10–60 min produces Si crystals 3–5 nm in size with a concentration of ≈10¹⁸ cm^?3. The annealed films exhibit room-temperature PL and EL over the wavelength range 400–850 nm with intensity peaks located at 50–60 and 60–70 nm, respectively. The PL and EL spectra are found to be qualitatively similar. This suggests that both the PL and the EL should be associated with the formation of luminescent centers at nanocrystal–matrix interfaces and in boundary regions. However, the two phenomena should differ in the mechanism by which the centers are excited. With the EL, excitation should occur by impact processes due to carrier heating in high electric fields. It is found that as δ increases, so does the proportion of large amorphous Si clusters with a high density of dangling bonds. This enhances nonradiative recombination and suppresses luminescence.     

Laser-induced desorption of atomic and molecular fragments from a tin dioxide surface modified by a thin organic covering of copper phthalocyanine

The systematic features of laser-induced desorption from an SnO₂ surface exposed to 10-ns pulsed neodymium laser radiation are studied at the photon energy 2.34 eV, in the range of pulse energy densities 1 to 50 mJ/cm². As the threshold pulse energy 28 mJ/cm² is achieved, molecular oxygen O₂ is detected in the desorption mass spectra from the SnO₂ surface; as the threshold pulse energy 42 mJ/cm² is reached, tin Sn, and SnO and (SnO)₂ particle desorption is observed. The laser desorption mass spectra from the SnO₂ surface coated with an organic copper phthalocyanine (CuPc) film 50 nm thick are measured. It is shown that laser irradiation causes the fragmentation of CuPc molecules and the desorption of molecular fragments in the laser pulse energy density range 6 to 10 mJ/cm². Along with the desorption of molecular fragments, a weak desorption signal of the substrate components O₂, Sn, SnO, and (SnO)₂ is observed in the same energy range. Desorption energy thresholds of substrate atomic components from the organic film surface are approximately five times lower than thresholds of their desorption from the atomically clean SnO₂ surface, which indicates the diffusion of atomic components of the SnO₂ substrate to the bulk of the deposited organic film.