MTRF技术在CSFB语音解决方案中的应用

CSFB是一种LTE语音解决方案,其基本思想是LTE用户通过从LTE网络回落到2G￥3G电路域以进行语音业务接续。本文首先介绍CSFB语音解决方案的关键技术,重点分析用户被叫流程时回落的重点和难点。其次介绍MTRF关键技术及其应用场景。最后提出通过MTRF技术可解决CSFB方案的被叫回落异常问题,并分析部署MTRF技术对GSM-TD-SCDAM-TD-LTE融合网络影响。     

MTRF技术在CSFB话音解决方案中的应用

CSFB是一种TD-LTE话音解决方案,其基本思想是TD-LTE用户通过从TD-LTE网络回落到GSM/TDSCDMA电路域以进行话音业务接续。本文首先介绍了CSFB话音解决方案的关键技术,重点分析了用户被叫流程时回落的重点和难点。其次介绍了MTRF关键技术及其应用场景。最后提出通过MTRF技术可解决CSFB方案的被叫回落异常问题,并分析部署MTRF技术对GSM/TD-SCDMA/TD-LTE融合网络影响。     

跨MSC边界导致CSFB呼叫失败的解决方案分析

简要介绍了被叫漫游前转技术（MTRF）在4G网络中的实现方案和原理。针对LTE网络中存在4G用户在跨MSC边界时CSFB呼叫失败的问题,通过信令流程分析查找出问题发生的根本原因,提出在核心网侧CS域通过MSC改造方式部署MTRF功能的解决方案,为后期中国联通在LTE网络建设中存在类似的问题提供参考。     

电路域回落组网策略研究

电路域回落技术是解决LTE/EPC网络过渡期间语音呼叫连续性的解决方案之一,通过重用2G/3G网络资源降低业务部署成本。本文探讨了CSFB架构以及技术要求,讨论了用户回落至非注册MSC方案和CSFB组网方案,并对上述技术方案进行比较,最后针对现网部署给出CSFB组网策略建议。     

CSFB技术原理及部署

CSFB(电路域回落)作为LTE网络在建设初期的语音解决方案之一,受到运营商的一定关注,尤其是3GPP运营商。文章首先介绍CSFB的技术原理,针对GMS/UMTS运营商及CDMA运营商分别进行阐述;同时介绍CSFB的主流语音回落机制及语音业务结束后的返回机制,最后就部署CSFB需要注意的问题进行分析并给出一定建议。     

LTE CSFB网络部署研究

目前,电信运营商正在紧锣密鼓地建设LTE网络,其语音业务的目标是Vo LTE,但实现这一目标有一个长期的过程。为此,基于CSFB(电路域回落)技术的语音解决方案应运而生,它将在网络演进过渡阶段发挥重要作用。文章简单介绍CSFB基本原理,对关键技术进行对比分析,对CSFB网络部署过程中关键技术方案的选择给出建议,并对CSFB组网方案及其他问题进行探讨研究。     

LTE CSFB语音方案与性能分析

调查了业界关注的几种LTE语音方案现状,重点对目前运营商比较关注的CSFB语音方案进行了研究,包括CSFB信令流程和关键技术,例如联合附着、回落机制和MTRF等。最后针对各种回落机制对CSFB的性能影响进行了分析研究,结果表明当LTE回落到UMTS时,PS HO是最优方案,而当LTE回落到GSM网络时,R9 RRC Release with SIB是最优方案。     

一种实现CSFB的方法研究

探讨了一种电路域回落(CSFB)的实现方法,该方法可以避免对现网已经部署的访问移动交换中心服务器(VMSC)、网关移动交换中心(GMSC)升级改造,易于在现网部署。在本CSFB解决方案中,由归属用户服务器(HSS)执行呼叫重试功能,从组网来看,只需要增加一个Proxy移动交换中心(MSC)服务器,对现网已经部署的VMSC、GMSC没有改造要求。     

基于LTE网络的CSFB语音业务设计与实现

针对LTE建网初期覆盖不足的现状,提出了基于LTE网络的CSFB语音业务方案和实现办法。目前,CSFB回落方案采用3GPP R8重定向回落方案,同时要求终端支持缓读System Information 13系统消息功能以缩短呼叫建立时延、优化方案性能。总体来说,CSFB呼叫建立过程包括三个阶段:UE在LTE网络发起呼叫/被叫接收寻呼、UE在LTE网络指引下回落并搜索合适的W小区接入、UE读取W小区系统广播消息并建立语音通话。在CSFB部署过程中,因参数配置或者设备功能缺陷,将导致CSFB呼叫建立过程出现异常情况。解决了被叫语音用户由4G网络回落到3G网络过程中出现的"被叫关机"问题,对于今后的网络优化具有参考价值。     

爱立信演示全球首例增强型TD-LTE话音回落

基于3GPP Release 9标准,从TD-LTE到GSM的增强型电路交换回落(CSFB)使LTE设备能够利用广泛部署的GSM网络,实现对语音和短信业务的支持在爱立信TD-LTE网络和高通芯片组的支持下,爱立信在2012中国国际信息通信展览会上进行了电路交换回落的实时公开演示     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.