用^252Cf裂片源研究单粒子烧毁和栅穿效应的方法

建立了＾２５２Ｃｆ裂片源模拟空间重离子的单粒子烧毁和单粒子栅穿效应的实验方法和测试装置,并利用该装置进行了功率ＭＯＳ场效应晶体管的ＳＥＢ、ＳＥＧＲ效应研究,给出了被测试器件ＳＥＢ、ＳＥＧＲ效应的损伤阈值。结果表明,该测试系统和实验方法是可行、可靠的。     

用~(252)Cf裂片源研究单粒子烧毁和栅穿效应的方法

建立了2 5 2 Cf裂片源模拟空间重离子的单粒子烧毁 (SEB)和单粒子栅穿 (SEGR)效应的实验方法和测试装置 ,并利用该装置进行了功率MOS场效应晶体管的SEB、SEGR效应研究 ,给出了被测试器件SEB、SEGR效应的损伤阈值。结果表明 ,该测试系统和实验方法是可行、可靠的。     

功率MOS、IGBT单粒子烧毁、栅穿效应模拟实验研究

建立了利用^252Gf裂片源,模拟空间重离子引起的单粒子烧毁、栅穿效应的实验方法和测试装置,开展了功率MOS器件、IGBT的单粒子烧毁、栅穿效应的模拟试验研究,给出了被试器件单粒子烧毁、栅穿效应的损伤阈值,以及随器件偏置的变化规律。     

n沟VDMOSFET单粒子烧毁的二维数值模拟

应用半导体器件二维模拟软件Medici对功率MOSFET器件单粒子烧毁SEB(Single Event Burnout)效应开展了理论模拟研究。理论模拟与以往的实验结果比较吻合,证明采取的物理模型的正确性。得到了SEB灵敏度与载流子浓度、基区宽度和发射结掺杂浓度等参数的变化关系,提出了改善SEB的几种加固措施。该模型对于评估器件SEB效应提供了理论方法。     

Burn-in对SRAM器件电离总剂量效应的影响

针对辐照前高温老练(Burn-in)影响SRAM器件的抗总剂量辐射能力问题,进行了实验研究。选取了3种不同工艺尺寸SRAM存储器,利用60 Co放射源对经过高温老炼和不经过高温老炼(No Burnin)的样品进行了总剂量辐照实验,测量了辐照引起的SRAM器件的数据位翻转数,得到了Burn-in对不同工艺尺寸SRAM器件总剂量效应的影响规律。针对0.25μm工艺SRAM器件开展了不同Burn-in温度影响器件抗辐射能力的实验研究,得到了器件抗辐射性能与Burn-in温度之间的关系。结果表明,SRAM器件的工艺尺寸越小,抗总剂量能力越强,且受Burn-in的影响越小;Burn-in时的温度越高,对器件的抗总剂量水平影响越大。     

模拟数字转换器AD574总剂量和单粒子翻转的协合效应

以美国亚德诺半导体技术有限公司bipolar/I2L工艺的12位模拟数字转换器AD574为研究对象,在60Coγ辐照条件下累积400 Gy(Si)的电离剂量(Total ionizing dose,TID),对累积总剂量前后的样品进行激光单粒子翻转(Single-event upset,SEU)试验,获得了0 V、1 ...     

反熔丝FPGA的电离总剂量效应与加固技术

简要叙述了商用FPGA用于空间领域时面临的抗电离总剂量加固总是，对Actel公司反熔丝FPGA的电离总剂量效应进行了较为详细的分析，包括制造了工艺，偏置条件，电泵对总剂量效应的影响，并特别指出，电泵的退化可能会对系统造成较为严重的后果，因此，必须重视加电后的瞬态变化，提出了可以采取的加固措施。     

功率MOS器件单粒子栅穿效应的PSPICE模拟

建立了功率ＭＯＳ器件单粒子栅穿效应的等效电路模型和相应的模型参数提取方法,对ＶＤＭＯＳ器件的单粒子栅穿效应的机理进行了模拟和分析,模拟结果与文献中的实验数据相符合,表明所建立的器件模型和模拟方法是可靠的。     

双极运算放大器LM158电离总剂量与重离子协同辐射效应研究

为研究双极运算放大器电离总剂量与单粒子瞬态的协同效应,选取双极运算放大器LM158分别在高剂量率0.1 Gy·s?1(Si)和低剂量率1×10?4 Gy·s?1(Si)条件下进行60Coγ射线辐照试验,累积电离总剂量至1000 Gy(Si)后,再进行重离子类型为钽(Ta)离子的协同辐照试验.试验结果表明:电离总剂量会导...     

一种抗辐照功率MOSFET器件

报道了一种抗辐射功率MOSFET,通过与国外同类产品的锎源以及钴辐照试验对比,其抗总剂量水平和抗单粒子能力均已达到国际领先水平,并深入研究了单粒子烧毁、单粒子栅穿以及总剂量辐照的机理,提出了大功率MOSFET抗总剂量及单粒子辐射的加固方法。     

Total ionizing dose effects in high voltage devices for flash memory

The effect of size and substrate bias conditions after irradiation on the total ionizing dose response of high voltage devices for flash memory has been investigated. Different sensitivity of transistors with different gate width was observed, which is well known as the radiation induced narrow channel effect. A charge sharing model was used to explain this effect. The negative substrate bias voltage after irradiation showed considerable impact on the parasitic transistor’s response by suppressing leakage current.     

4000系列CMOS器件的电离辐射感生漏电流

研究分析了４０００系列ＣＭＯＳ器件电离辐射感生漏电流的产生机制、变化特性及其与加固水平的关系，探讨了辐射感生静态功耗电流，其中特别是场氧化层漏电流的加固抑制方法。     

Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter

The influence of combined total ionization dose(TID) and radiated electromagnetic interference(EMI) in a commercial analog-to-digital converter(ADC) was studied. The degradation of the direct-current response, the static parameters, and the dynamic parameters caused by the TID and EMI separately and synergistically is presented. The experimental results demonstrate that the increase in TID intensifies data error and the signal-tonoise ratio(SNR) degradation caused by radiated EMI. The cumulative...     

偏置条件对NPN型锗硅异质结双极晶体管电离辐射效应的影响

本文研究了不同偏置条件下国产商用NPN型锗硅异质结双极晶体管(Silicon germanium hetero-junction bipolar transistors,SiGe HBTs)在60Coγ辐射环境中电离辐照响应特性和变化规律。实验结果表明,在0.8 Gy(Si)·s-1剂量率辐照下,总累积剂量达到1.1×104 Gy(Si)时,发射结反向偏置条件下60Coγ射线辐照对SiGe HBTs造成的损伤最大,零偏次之,正偏损伤最小;经过一定时间的退火后,零偏恢复程度最小,而正偏和反偏时的恢复趋势以及程度相同。分析了不同偏置状态下其电离辐照敏感参数随累积总剂量以及退火时间的变化关系,讨论了引起电参数失效的潜在机理。     

Modeling of high-dose-rate transient ionizing radiation effects inbipolar devices

We have developed a dynamic model for photoelectric effect in bipolar devices exposed to a wide range of ionizing radiation intensities. We represent the stationary and dynamic photocurrents by current sources in parallel with each p-n junction. These sources include the prompt photocurrent of the depletion regions and the delayed response associated with the buildup and discharge of excess charge carriers in the quasi-neutral (q-n) regions adjacent to the junctions. The latter are described in terms of dynamic delay times for each q-n region, which can be represented by RC equivalent delay circuits. The model has been implemented in the circuit simulator AIM-Spice and has been verified by numerical simulations     

典型CMOS器件总剂量加速试验方法验证

应用美军标试验方法1019．5和1019．4分别对两种典型（Complementary Metal-Oxide—Semiconductor Transistor,CMOS）器件进行试验验证,论述了试验原理,对试验现象进行了详细的分析,了解实验室条件下评估空间氧化物陷阱电荷和界面陷阱电荷的可行性和保守性。实验表明,两种不同工艺的CC4069器件没有通过1019．5所做出的试验验证,从实验现象观察认为是由于界面陷阱电荷大量建立所引起的。加固LC4007-RHA NMOS却通过了与1019．5相比过分保守的1019．4的试验验证。     

Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

The total dose effect of ~(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.     

Total ionizing dose and synergistic effects of magnetoresistive random-access memory

A magnetoresistive random-access memory(MRAM) device was irradiated by ~(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.