一种GSM无线发射系统中的低功耗数模转换器

针对GSM标准无线发射系统中数模转换器(DAC)的要求,分析了影响其性能和功耗的限制因素,并在SMIC 0·13μm CMOS工艺1.2 V电源电压下设计了一款10位电流驱动型数模转换器(Current-steering DAC).使用最佳拟合线的算法衡量电流源匹配的随机误差对DAC静态非线性的影响,使得DAC的电流源...     

A self-trimming 14-b 100-MS/s CMOS DAC

A 14-b 100-MS/s CMOS digital-analog converter (DAC) designed for high static and dynamic linearity is presented. The DAC is based on a central core of 15 thermometer decoded MSBs, 31 thermometer decoded upper LSBs (ULSBs) and 31 binary decoded lower LSBs (LLSBs). The static linearity corresponding to the 14-b specification is obtained by means of a true background self-trimming circuit which does not use additional current sources to replace the current source being measured during self-trimming. The dynamic linearity of the DAC is enhanced by a special track/attenuate output stage at the DAC output which tracks the DAC current outputs when they have settled but attenuates them for a half-clock cycle after the switching instant. The DAC occupies 3.44 mm×3.44 mm in a 0.35-μm CMOS process, and is functional at up to 200 MS/s, with best dynamic performance obtained at 100 MS/s. At 100 MS/s, power consumption is 180 mW from a 3.3-V power supply, and 210 mW at 200 MS/s     

3V 10b 70 MHz CMOS D/A converter for video applications

This work describes a 10 b 70 MHz CMOS digital-to-analogue converter (DAC) for video applications. The proposed DAC is composed of a unit decoded matrix for 7 MSBs and a binary weighted array for 3 LSBs, considering linearity, power consumption, routing area and glitch energy. A new switching scheme for the unit decoded matrix is developed to further improve the linearity. Cascode current sources and differential switches with a new deglitching circuit improve the dynamic performance     

A 10-b 125-MHz CMOS digital-to-analog converter (DAC) withthreshold-voltage compensated current sources

This paper describes a 10-b high-speed COMS DAC fabricated by 0.8-μm double-poly double-metal CMOS technology. In the DAC, a new current source called the threshold-voltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources. In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The rise/fall time is 3 ns and the full-scale settling time to ±1/2 LSB is within 8 ns. The chip area is 1.8 mm×1.0 mm     

四位GaAs超高速D/A转换电路的研究

本文简要介绍了目前国际上GaAs超高速D/A转换器的研制情况。在详细分析了几种常用类型D/A转换电路工作原理的基础上,结合现有GaAs VHSIC的制作工艺条件,设计并制作了一种4位单片集成GaAs MESFET D/A转换电路。测试结果表明,该电路分辨率为4位,转换速率办1Gs/s,建立时间小于1.0ns,微分线性误差小于±1/2LSB,功耗约为20mW。     

A 10-bit 200-MHz CMOS video DAC for HDTV applications

This paper describes a 10-bit 200-MHz CMOS current steering digital-to-analog converter (DAC) for HDTV applications. The proposed 10-bit DAC is composed of a unit decoded matrix for 6 MSBs and a binary weighted array for 4 LSB’s, considering linearity, power consumption, routing area, and glitch energy. A new switching scheme for the unit decoded matrix is developed to improve linearity further. Cascade current sources and differential switches with deglitch latch improve dynamic performance. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.3 LSB and 0.2 LSB, respectively. The converter achieves a spurious-free dynamic range (SFDR) of above 55 dB over a100-MHz bandwidth and low glitch energy of 1.5 pVs. The circuit is fabricated in a 0.25 μm CMOS process and occupies 0.91 mm². When operating at 200 M Sample/s, it dissipates 82 mW from a 3.3 V power supply.     

A 12-bit 1-Gword/s GaAs digital-to-analog converter system

The circuitry for a 12-b 1-Gword/s digital-to-analog converter (DAC) IC is described. A DC linearity of /spl plusmn/1/8 LSB has been preserved with this all-depletion GaAs MESFET chip. Dynamic measurements in the frequency domain indicate nonlinearities of less than -62 dBc at a 1-GHz clock rate. The DAC uses a very fast FET analog current switch that exhibits sufficiently low leakage currents for a 12-b linearity. The limited on-chip matching capabilities require the precision DC currents to be generated external to the GaAs chip. A current-switching DAC that partitions the high-speed functions onto a single GaAs chip while the high-precision bit currents are realized off-chip is described. The GaAs chip contains 12 1-b cells, each of which switches an analog bit current into a single sampler circuit that is shared by all the switches. The sampler is used to increase the dynamic linearity in the DAC.     

A Heterogeneous 16-Bit DAC Using a Replica Compensation

A highly monotonic very low power 16-bit 2-MS/s digital-to-analog converter (DAC) for high-resolution control loop systems is proposed and demonstrated. Replica compensation is used in improving the monotonicity of a heterogeneous DAC composed of a coarse current steering DAC and a fine resistor-ladder DAC. A complete DAC, including an on-chip bandgap reference and an output buffer, consumes only 0.6 mA with a 2.7-V supply. The 2.19-mm $^{2}$ DAC with 10-I/O bonding pads implemented in 0.18- $mu$m Bi-CMOS process achieves ${pm} 0.8$ least significant bit (LSB) differential nonlinearity, ${pm} 4$ LSB integral nonlinearity, and ${pm} $ 3-mV offset error at 2-MS/s sample rate.      

A new technique for on-chip error estimation and reconfiguration of current-steering digital-to-analog converters

In this paper, we propose a reconfigurable current-steering digital-to-analog converter (DAC). The differential nonlinearity error (DNL) of the DAC is estimated on-chip. This is used to reconfigure the switching sequence to get a lower integral nonlinearity error (INL). We propose a novel technique for estimation of DNL based on a step-size measurement. This greatly reduces the linearity and dynamic range requirements of the measuring circuits. A 10-b segmented DAC, along with the associated circuits for DNL estimation and reconfiguration, was designed using 0.35-/spl mu/m CMOS technology and fabricated through Europractice. The paper includes theoretical analysis, simulation, and experimental results for the proposed technique.     

A complete high-speed voltage output 16-bit monolithic DAC

A new single-chip 16-bit monolithic digital/analog converter (DAC) with on-chip voltage reference and operational amplifiers has achieved /spl plusmn/0.0015% linearity, 10 ppm//spl deg/C gain drift, and 4-/spl mu/s settling time. Novel elements of the 16-bit DAC include: the fast settling open-loop reference with a buried Zener, a fast-settling output operational amplifier without the use of feedforward compensation, and a modified R-2R ladder network. Thermal considerations played a significant role in the design. The DAC is fabricated using a 20-V process to reduce device sizes and therefore die size. All laser trimming including temperature drift compensation is performed at the wafer level. The converter does not require external components for operation.     

An untrimmed D/A converter with 14-bit resolution

Describes a monolithic 14-bit DAC which uses a new compensation technique for the DAC linearity, the `self-compensation technique', originated through a new concept. Since this technique automatically compensates for linearity error in the DAC by referring to a ramp function with about 17-bit linearity, a high precision DAC can be produced in monolithic form without the trimming of analog components. An experimental 14-bit DAC chip has been fabricated using analog compatible IIL technology and two-level metalization. A linearity error of less that /spl plusmn/1/2 LSB and a settling time of 1-2 /spl mu/s has been achieved.     

A low-Voltage 10-bit CMOS DAC in 0.01-mm/sup 2/ die area

A low-voltage 10-bit digital-to-analog converter (DAC) for static/dc operation is fabricated in a standard 0.18-/spl mu/m CMOS process. The DAC is optimized for large integrated circuit systems where possibly dozens of such DAC would be employed for the purpose of digitally controlled analog circuit calibration. The DAC occupies 110 /spl mu/m/spl times/94 /spl mu/m die area. A segmented R-2R architecture is used for the DAC core in order to maximize matching accuracy for a minimal use of die area. A pseudocommon centroid layout is introduced to overcome the layout restrictions of conventional common centroid techniques. A linear current mirror is proposed in order to achieve linear output current with reduced voltage headroom. The measured differential nonlinearity by integral nonlinearity (DNL/INL) is better than 0.7/0.75 LSB and 0.8/2 LSB for 1.8-V and 1.4-V power supplies, respectively. The DAC remains monotonic (|DNL|<1 LSB) as INL reaches 4 LSB down to 1.3-V operation. The DAC consumes 2.2 mA of current at all supply voltage settings.     

A sixteen-bit monolithic bipolar DAC

Describes a fully monolithic 16-bit digital-analog converter (DAC) which is fabricated with dielectric isolation and thin film nichrome resistors. The design uses a straightforward extension of techniques successfully used in lower resolution DACs. To achieve the greater accuracy needed for a 16-bit DAC, special layout techniques are used. An auxiliary R-2R ladder is introduced to provide a ground current cancellation scheme. The experimental results show that 16-bit resolution is possible with a typical settling time of 1 /spl mu/s. Improved performance over a temperature range of 0/spl deg/C-75/spl deg/C is observed with units exhibiting one-half an LSB differential and integral linearity of 14-bit resolution. The initial 16-bit accuracy approaches that of expensive hybrid modules, while the accuracy over wide temperature ranges surpasses anything presently reported.     

An 8-bit, 5 ns monolithic D/A converter subsystem

Describes a 5 ns settling time digital-to-analog converter device, which has been designed for use in video speed successive approximation analog to digital converters. The chip includes a precision reference source with a 25 ppm per degree C average temperature coefficient and a high-speed comparator. The successive approximation approach, restricted to low-speed converters until now, has the advantages of low cost and straightforward drive requirements. The achievement of the operating speeds described is dependent both on the circuit techniques used and the process employed. The DAC circuit, unlike most other devices, uses a multiple-matched current source array technique, which leads to a very linear, low glitch output. Without any form of trimming, most functional devices meet a /spl plusmn//SUP 1///SUB 2/ LSB differential and integral linearity specification, and many are /spl plusmn//SUP 1///SUB 4/ LSB or better.     

BIST structure for DAC testing

A built-in self-test (BIST) structure for digital-to-analogue converter (DAC) testing is presented. The basic idea is to divide the input codes (0, 1, ..., 2ⁿ-1) of the DAC under test into a number of segments. The DAC output voltages corresponding to different codes in the same segment are amplified to the same voltage value. Such that one single reference voltage can be used to test all codes in the same segment. By this method, the number of reference voltages required for DAC testing can be greatly reduced. We show that offset error, gain error, integral nonlinearity (INL) and differential nonlinearity (DNL) are effectively detected in the proposed BIST structure     

面向高速应用的10位2GHz数模转换器

提出了一个刷新率达2GHz的10位电流驱动型数模转换器.在综合了精度与芯片面积等因素之后,该数模转换器使用6+4结构.采用电流型逻辑以提高转换器的速度,并采用Q2 random walk方法设计了一个双中心对称的电流矩阵,确保数模转换器的线性度.该数模转换器核心版图面积为2.2mm×2.2mm,在3.3V单电压供电的情况下,该芯片功耗为790mW.     

A 14-b, 100-MS/s CMOS DAC designed for spectral performance

A 14-bit, 100-MS/s CMOS digital-to-analog converter (DAC) designed for spectral performance corresponding more closely to the 14-bit specification than current implementations is presented. This DAC utilizes a nonlinearity-reducing output stage to achieve low output harmonic distortion. The output stage implements a return-to-zero (RZ) action, which tracks the DAC once it has settled and then returns to zero. This RZ circuit is designed so that the resulting RZ waveform exhibits high dynamic linearity. It also avoids the use of a hold capacitor and output buffer as in conventional track/hold circuits. At 60 MS/s, DAC spurious-free dynamic range is 80 dB for 5.1-MHz input signals and is down only to 75 dB for 25.5-MHz input signals. The chip is implemented in a 0.8-μm CMOS process, occupies 3.69×3.91 mm ² of die area, and consumes 750 mW at 5-V power supply and 100-MS/s clock speed     

面向高速应用的10位2GHz数模转换器

提出了一个刷新率达2GHz的10位电流驱动型数模转换器.在综合了精度与芯片面积等因素之后,该数模转换器使用6 4结构.采用电流型逻辑以提高转换器的速度,并采用Q2 random walk方法设计了一个双中心对称的电流矩阵,确保数模转换器的线性度.该数模转换器核心版图面积为2.2mm×2.2mm,在3.3V单电压供电的情况下,该芯片功耗为790mW.     

Kink-free SOI analog circuit design with floating-body/NFD MOSFETs

A novel design approach to ensure general kink-free operation of floating-body/nonfully depleted (NFD) SOI analog circuits is described. The approach involves optimization of the bias and aspect ratios of all transistors that determine gain and current in a circuit such that they operate only in their kink-free voltage windows. The approach is demonstrated via a simulation-based design of the current cells of a 10-b floating-body/NFD DAC that shows good linearity and resolution at dc and frequencies up to 1 GHz. In contrast, the floating-body/NFD DAC without proper optimization shows poor and prohibitive performance     

A 100-MHz CMOS DAC for video-graphic systems

A 6-b weighted-current-sink video digital-to-analog converter (DAC) with 10-90% rise/fall time of 4 ns, integrated with a double-metal 3-μm CMOS technology, is described. Current-source matching, glitch reduction, and differential switch driving aspects are considered. A circuit solution and a nonconventional layout technique yield a high conversion rate with a standard CMOS technology. Experimental results show that a conversion rate of 100 MHz is achievable. The power consumption is 150 mW and the active chip area is 0.5×1.0 mm² . The differential of 0.1 LSB demonstrates that 8 b of accuracy can be achieved. The integral linearity is 0.5 LSB