Compositional dependence of phase structure and electrical properties in (K0.50Na0.50)0.97Bi0.01(Nb1−xZrx)O3 lead-free ceramics

(K_0.50Na_0.50)_0.97Bi_0.01(Nb_1-xZr_x)O₃ (KNBNZ) lead-free ceramics were prepared by the conventional solid-state sintering process. Their phase structure is dependent on the Zr content in the investigated range, and the ceramics endure a phase transition from pseudocubic to orthorhombic with increasing Zr content. Improved piezoelectric properties have been observed when the poling temperature is located at ~100 °C because of the coexistence of orthorhombic and tetragonal phases. Their dielectric and piezoelectric properties were enhanced by doping Zr, the ceramic with x=0.02 showing optimal electrical properties, i.e., d₃₃~161 pC/N, k_p~0.41, Q_m~81, T_c~370 °C, and T_o−t~130 °C. These results show that the KNBNZ ceramic is a promising lead-free piezoelectric material.     

Adjustable dielectric properties of Li2CuxZn1−xTi3O8 (x=0 to 1) ceramics with low sintering temperature

Single-phase dielectric ceramics Li₂Cu_xZn_1−xTi₃O₈ (x=0–1) were synthesized by the conventional solid-state ceramic route. All the solid solutions adopted Li₂MTi₃O₈ cubic spinel structure in which Li/M and Ti show 1:3 order in octahedral sites whereas Li and M are distributed randomly in tetrahedral sites with the degree of Li/M cation mixing varying from 0.5 to 0.3. The substitution of Cu for Zn effectively lowered the sintering temperatures of the ceramics from 1050 to 850 °C and significantly affected the dielectric properties. As x increased from 0 to 0.5, τ_f gradually increased while the dielectric constant (ε_r) and quality factor value (Q×f) gradually decreased, and a near-zero τ_f of 1.6 ppm/°C with ε_r of 25.2, Q×f of 32,100 GHz could be achieved for Li₂Cu_0.1Zn_0.9Ti₃O₈ ceramic sintered at 950 °C, which make it become an attractive promising candidate for LTCC application. As x increases from 0.5 to 1, the dielectric loss significantly increases with AC conductivity increasing up to 2.3×10⁻⁴ S/cm (at 1 MHz).     

Microwave dielectric properties of BaO-2(1 − x)ZnO-xNd2O3-4TiO2 (x = 0-1.0) ceramics

Microwave dielectric properties of (1 − x)BaZn₂Ti₄O₁₁-xBaNd₂Ti₄O₁₂ (x = 0-1.0) ceramics were investigated by the solid-state reaction with the purpose of finding a microwave ceramics with high dielectric constant (?_r), high quality factor (Q × f) and low temperature coefficient of resonant frequency (τ_f). A two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ was formed and SEM photographs show equiaxed BaZn₂Ti₄O₁₁ grains and columnar BaNd₂Ti₄O₁₂ grains. The microwave dielectric properties were strongly determined by the chemical composition. As increasing x from 0 to 1.0, the phase composition varied from pure BaZn₂Ti₄O₁₁, to the two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ and then to pure BaNd₂Ti₄O₁₂. Therefore, the ?_r raised from 29.1 to 82.0 and the Q × f values decreased from 54,630 GHz to 8110 GHz, and the τ_f values increased from −29 ppm/°C to 94 ppm/°C. 0.8BaZn₂Ti₄O₁₁-0.2BaNd₂Ti₄O₁₂ ceramics sintered at 1250 °C for 2.5 h had ?_r = 39.1, Q × f = 37,850 GHz and τ_f = −9 ppm/ °C.     

Effect of Nb-doping on dielectric, ferroelectric and conduction behaviour of lead free Bi0.5(Na0.5K0.5)0.5TiO3 ceramic

Bi_0.5(Na_0.5K_0.5)_0.5TiO₃ + y wt.% Nb (y = 0-1) piezoelectric ceramics were synthesized by solid state reaction. The effect of varying Nb concentration on various properties of BNKT ceramic has been investigated in detail. The effect of Nb-doping on dielectric and ferroelectric property has been presented. An increase in its depolarization temperature and Curie temperature with Nb concentration was observed. The electrical properties of pure and Nb-doped BNKT ceramic over a wide range of frequencies (20 Hz to 2 MHz) and temperature (30-430 °C) were studied using impedance spectroscopic technique.     

ZnLi2/3Ti4/3O4: A new low loss spinel microwave dielectric ceramic

A new low loss spinel microwave dielectric ceramic with composition of ZnLi_2/3Ti_4/3O₄ was synthesized by the conventional solid-state ceramic route. The ceramic can be well densified after sintering above 1075 °C for 2 h in air. X-ray diffraction data show that ZnLi_2/3Ti_4/3O₄ ceramic has a cubic structure [Fd-3m (227)] similar to MgFe₂O₄ with lattice parameters of a = 8.40172 Å, V = 593.07 Å³, Z = 8 and ρ = 4.43 g/cm³. The best microwave dielectric properties can be obtained in ceramic with relative permittivity of 20.6, Q × f value of 106,700 GHz and τ_f value of −48 ppm/°C. The addition of BaCu(B₂O₅) (BCB) can effectively lower the sintering temperature from 1075 °C to 900 °C and does not induce much degradation of the microwave dielectric properties. Compatibility with Ag electrode indicates that the BCB added ZnLi_2/3Ti_4/3O₄ ceramics are good candidates for LTCC applications.     

Investigation of ternary system Pb(Sn,Ti)O3-Pb(Mg1/3Nb2/3)O3 with morphotropic phase boundary compositions

(1 − x)Pb(Sn_1−yTi_y)O₃-xPb(Mg_1/3Nb_2/3)O₃ (x = 0.1-0.4, y = 0.45-0.65) ternary system was prepared using two-step columbite precursor method. Phase structure of the synthesized ceramics was studied by using X-ray powder diffraction and the morphotropic phase boundary (MPB) curve of the ternary system was confirmed. The isothermal map of Curie temperature (T_C) in the phase diagram was obtained based on the dielectric-temperature measurements. The coercive field E_C and internal bias field E_i were found to increase with increasing PT content, while decrease with increasing PMN content. The optimum properties were achieved in the MPB composition 0.8Pb(Sn_0.45Ti_0.55)O₃-0.2Pb(Mg_1/3Nb_2/3)O₃, with dielectric permittivity ?_r, piezoelectric coefficient d₃₃, planar electromechanical coupling k_p, mechanical quality factor Q_m and T_C of being on the order of 3040, 530pC/N, 55.5%, 320 and 190 °C, respectively, exhibiting potential usage for high power application.     

Sintering and electrical properties of La-modified (Na0.52K0.45Li0.03)1−3xLax(Nb0.88Sb0.09Ta0.03)O3 lead-free ceramics

(Na_0.52K_0.45Li_0.03)_1−3xLa_x(Nb_0.88Sb_0.09Ta_0.03)O₃ (NKLL_xNST) lead-free ceramics were prepared by normal sintering and their dielectric and piezoelectric properties were investigated. The X-ray methods indicate that the NKLL_xNST ceramics with x≤0.003 present a pure perovskite phase at room temperature. The bulk density of NKLL_xNST ceramics increases with proper amount of La₂O₃ contents, and reaches its highest value of 4.544 g/cm³ with the addition of 0.3 mol% La₂O₃. At x=0.003, remnant polarization P_r, piezoelectric constant d₃₃ and planar mode electromechanical coupling factor k_p of NKLL_xNST ceramics reach the highest values of 37.80 μC/cm², 346 pC/N and 40%, respectively, exhibiting excellent “soft” piezoelectric characteristics, demonstrating a tremendous potential of the compositions studied for device applications.     

Microwave dielectric properties of the (1 − x)Mg2TiO4-xCaTiO3-y wt.% ZnNb2O6 ceramics system

Composite ceramics based on (1 − x)Mg₂TiO₄-xCaTiO₃-y wt.% ZnNb₂O₆ (x = 0.12-0.16, y = 0-8) were prepared by a conventional mixed-oxide route. Zn²⁺ partially replaced Mg²⁺ in Mg₂TiO₄ and formed the spinel-structured (Mg_1−δZn_δ)₂TiO₄ phase. Nb²⁺, is known to be solid soluble in CaTiO₃, was found to change its shape from cubic to pliable. A bi-phase system (Mg_1−δZn_δ)₂TiO₄ and CaTiO₃ exhibited in all samples, where a small amount of second phase Mg_1−δZn_δTiO₃ was also detected. The microwave dielectric properties of specimens were strongly related to ZnNb₂O₆ and CaTiO₃ content. As y increased, ?_r and τ_f decreased, however, Q × f decreased to a minimum value and started to increase thereafter. It was also found that ?_r and τ_f increased and Q × f decreased with increasing x. The optimized microwave dielectric properties with ?_r = 18.37, Q × f = 31,027 GHz (at 6 GHz), and τ_f = 0.51 ppm/°C were achieved for (1 − x)Mg₂TiO₄-xCaTiO₃-y wt.% ZnNb₂O₆ (x = 0.12, y = 4) sintered at 1360 °C for 6 h.     

Phase composition and properties of solid solutions of GdFeO3–GdInO3 bulks

Solid solutions of the GdFeO₃–GdInO₃ system were prepared at 1550 °C by ceramic powder processing. The formulated composition was Gd(Fe_1−xIn_x)O₃ (GFI) with the indium contents at x = 0, 0.25, 0.5, 0.75, and 1.0. A stable phase of Gd(Fe_1/3In_2/3)O₃ in our system was identified by X-ray diffraction and phase composition analysis. Multi-phase morphologies were observed for GFI bulks with x = 0.5 and 0.75. Dielectric and electrical properties of the GFI bulks were investigated. The addition of 25% In³⁺ in GdFeO₃ had an obvious enhancement in polarization and led to an elevated resonance frequency. Dielectric properties of GFI bulks except GdInO₃ were strongly dependent upon the test frequency, which corresponded to the response of polarization mechanism. GdInO₃ displayed as a stable dielectric, which was frequency- and temperature-insensitive. GdInO₃ was thermally activated and became leaky until above 600 °C.     

Lanthanum-doped Bi4Ti3O12 prepared by the soft chemical method: Rietveld analysis and piezoelectric properties

Bi_4−xLa_xTi₃O₁₂ (BLT) thin films and powders with x ranging from 0 to 0.75 were prepared by the polymeric precursor solution. The effect of lanthanum on the structure of BIT powders was investigated by Rietveld Method. The increase of lanthanum content does not lead to any secondary phases. Orthorhombicity of the bismuth titanate (BIT) crystal lattice decreased with the increase of lanthanum content due the reduction of a/b ratio. The BLT films show piezoelectric coefficients of 45, 19, 16 and 10 pm/V for x = 0, 0.25, 0.50 and 0.75, respectively. The piezoelectric response is strongly reduced by the amount of lanthanum added to the system.     

Microwave dielectric properties of PTFE/CaTiO3 polymer ceramic composites

CaTiO₃ ceramic powder filled polytetrafluoroethylene (PTFE) composites with various filler volume fractions up to 60 vol.% were prepared. The effects of volume fraction of the ceramic filler on the microstructure and microwave dielectric properties of the composites were investigated in detail. As the volume fraction of the ceramic filler increases, the dielectric constant (?_r) and the temperature coefficient of resonant frequency (τ_f) of composites increase, while the product of quality factor and frequency (Q × f) decreases. Composites with 40 vol.% CaTiO₃ exhibited good microwave dielectric properties: ?_r = 13 at ∼5 GHz, Q × f = 930 GHz, and τ_f = 260 ppm/°C. Different mixing rules were used to predict the dielectric constant of composites, and it was found that the dielectric constants predicted by Effective Medium Theory (EMT) were in good agreement with experimental data.     

High energy-storage properties of [(Bi1/2Na1/2)0.94 Ba0.06] La(1−x) ZrxTiO3 lead-free anti-ferroelectric ceramics

Energy-storage properties of [(Bi_1/2Na_1/2)_0.94Ba_0.06]La_(1−x)Zr_xTiO₃ (BNT-BLZT, x=0, 0.02, 0.04, and 0.06) lead-free anti-ferroelectric ceramics fabricated via the conventional sintering technique were first investigated. Calculation from the X-ray diffraction results reveals that BNT-BLZT ceramic possesses a single perovskite structure phase. In addition, the P–E hysteresis loops measured at room temperature show that the BNT-BLZT (x=0.02) ceramics obtain the maximum P value of 37.5 μC/cm² and the largest energy-storage density W_max is 1.58 J/cm³. The temperature dependence of dielectric permittivity ε_r and dielectric loss tanδ illustrate that the addition of Zr can improve the piezoelectric properties of BT-BLZT ceramics. These properties indicate that BNT-BLZT ceramics might be a promising lead-free anti-ferroelectric material for energy storage application.     

Low temperature sintering and microwave dielectric properties of Ce2(WO4)3 ceramics

Ce₂(WO₄)₃ ceramics have been synthesized by the conventional solid-state ceramic route. Ce₂(WO₄)₃ ceramics sintered at 1000 °C exhibited ?_r = 12.4, Qxf = 10,500 GHz (at 4.8 GHz) and τ_f = −39 ppm/°C. The effects of B₂O₃, ZnO–B₂O₃, BaO–B₂O₃–SiO₂, ZnO–B₂O₃–SiO₂ and PbO–B₂O₃–SiO₂ glasses on the sintering temperature and microwave dielectric properties of Ce₂(WO₄)₃ were investigated. The Ce₂(WO₄)₃ + 0.2 wt% ZBS sintered at 900 °C/4 h has ?_r = 13.7, Qxf = 20,200 GHz and τ_f = −25 ppm/°C.     

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Ba₄Nd_9.33Ti₁₈O₅₄·x wt%Al₂O₃ (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of Al₂O₃ on the microstructure and microwave dielectric properties of Ba₄Nd_9.33Ti₁₈O₅₄ (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al₂O₃ additive gave rise to a second phase BaAl₂Ti₅O₁₄ (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al₂O₃ additive had improved the dielectric properties of the BNT ceramics: increased the Q×f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q×f=12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al₂O₃ added after sintering at 1320 °C for 4 h.     

The effect of Ga addition on the sinterability and microwave dielectric properties of RE3Al5O12 (Tb,Y, Er and Yb) garnet ceramics

The RE₃Al₅O₁₂ (RE=Tb, Y, Er, Yb) ceramics have been prepared by the mixed oxide route and the influence of Ga³⁺ doping on their properties is investigated. The intrinsic Y₃Al₅O₁₂ (YAG) ceramic sintered at 1650 °C for 4 h showed good dielectric properties; (ε_r=10.1, Q_u×f=65,000 GHz, τ_f=−45 ppm/°C). Addition of Ga₂O₃ was found to be beneficial in improving the densification of Tb₃Al₅O₁₂, Er₃Al₅O₁₂ and Yb₃Al₅O₁₂ except Y₃Al₅O₁₂ where Nb₂O₅ is the better choice. Among Ga³⁺ added samples, the composition Yb₃Al₅O₁₂+1 wt% Ga₂O₃ showed good microwave dielectric properties: ε_r=10.3, Q_u×f=50,000 GHz, τ_f=−58 ppm/°C. The Y₃Al₅O₁₂ doped with 1 wt% Nb₂O₅ has ε_r=10.7, Q_u×f=120,000 GHz and τ_f=−45 ppm/°C. The ceramics have good thermal properties (CTE=2–3 ppm/°C, λ=2–12 W/m K).     

Dielectric properties of Sm, Nd and Fe doped Bi1.5Zn0.92Nb1.5O6.92 pyrochlores

New pyrochlore ceramics have been produced by doping Sm and Nd into the Bi site and Fe into the Nb site in the Bi_1.5Zn_0.92Nb_1.5O_6.92 (BZN) pyrochlore. Doped pyrochlore ceramics were produced by conventional solid state mixing of oxides at different doping levels using the compositions of Bi_1.5−xSm_xZn_0.92Nb_1.5O_6.92, Bi_1.5−xNd_xZn_0.92Nb_1.5O_6.92 and Bi_1.5Zn_0.92Nb_1.5−xFe_xO_6.92−x. The solubility limit of cations was determined as x = 0.13, 0.18 and 0.15 for Sm, Nd and Fe, respectively. While Sm and Nd increased the dielectric constant (?), Fe doping led a decrease in ?. Dielectric constant of Sm and Nd doped BZN increased to 199 at x = 0.13 (Sm) and to 219 at x = 0.18 (Nd). At low Fe dopings (x = 0.05), the dielectric constant of BZN increased to 242 but decreased to 211 at x = 0.15. The dielectric losses were lower for Sm and Nd dopings than Fe but in all cases it was lower than 0.006. The dielectric constant of Sm, Nd and Fe doped BZN ceramics was nearly independent of frequency within the frequency range between 1 kHz and 2 MHz, but decreased considerably with temperature between 20 and 200 °C. Temperature coefficient of Sm doped BZN (−354 ppm/°C) was lower than Nd and Fe doped BZN ceramics at solubility limits (−538 ppm/°C for Nd and −565 ppm/°C for Fe).     

Phase diagram and properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 polycrystalline ceramics

yPb(In_1/2Nb_1/2)O₃-(1 − x − y)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (yPIN-(1 − x − y)PMN-xPT) polycrystalline ceramics with morphotropic phase boundary (MPB) compositions were synthesized using columbite precursor method. X-ray diffraction results indicated that the MPB of PIN-PMN-PT was located around PT = 0.33-0.36, confirmed by their respective dielectric, piezoelectric and electromechanical properties. The optimum properties were found for the MPB composition 0.36PIN-0.30PMN-0.34PT, with dielectric permittivity ?_r of 2970, piezoelectric coefficient d₃₃ of 450 pC/N, planar electromechanical coupling k_p of 49%, remanent polarization P_r of 31.6 μC/cm² and T_C of 245 °C. According to the results of dielectric and pyroelectric measurements, the Curie temperature T_C and rhombohedral to tetragonal phase transition temperature T_R-T were obtained, and the “flat” MPB for PIN-PMN-PT was achieved, indicating that the strongly curved MPB in PMN-PT system was improved by adding PIN component, offering the possibility to grow single crystals with high electromechanical properties and expanded temperature usage range (limited by T_R-T).     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics

The microwave dielectric properties of (Ba_xMg_1−x)(A_0.05Ti_0.95)TiO₃ (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q×f value decreased. The sintered (Ba_xMg_1−x)(Zr_0.05Ti_0.95)TiO₃ (called B_xMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (Ba_xMg_1−x)(Sn_0.05Ti_0.95)TiO₃ (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τ_f value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_0.1Mg_0.9)(Sn_0.05Ti_0.95)TiO₃ ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τ_f value of −3.3 ppm/°C sintered at 1210 °C for 4 h.