Densification, microstructural evolution and microwave dielectric properties of fluxed sintered 12R-Ba(Ti0.5Mn0.5)O3 ceramics

Doped hexagonal BaTiO₃ (h-BaTiO₃) ceramics have recently been identified as potential candidates for use in microwave dielectric resonators. However, similar to other common microwave ceramics, doped h-BaTiO₃ ceramics require a sintering temperature higher than 1400 °C. In this study, the effects of Bi₂O₃ and Li₂CO₃ on the densification, microstructural evolution and microwave properties of hexagonal 12R-Ba(Ti_0.5Mn_0.5)O₃ ceramics were examined. Results indicate that Bi₂O₃ and Li₂CO₃ are able to effectively reduce the sintering temperature of 12R-Ba(Ti₀₅Mn_0.5)O₃ ceramics through liquid phase sintering while retaining the hexagonal structure and the microwave dielectric properties. The best results were obtained for the 12R-Ba(Ti_0.5Mn_0.5)O₃ with the additions of 5 wt% Bi₂O₃ sintered at 1200 °C (?_r: 36.0, Qf_r: 6779 GHz, and τ_f: 25.3 ppm/°C), and 5 wt% Li₂CO₃ sintered at 1200 °C (?_r: 28.1, Qf_r: 5304 GHz, and τ_f: 35.3 ppm/°C).     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Transparent polycrystalline MgAl2O4 ceramic fabricated by spark plasma sintering: Microwave dielectric and optical properties

The optical properties and microwave dielectric properties of transparent polycrystalline MgAl₂O₄ ceramics sintered by spark plasma sintering (SPS) through homemade nanosized MgAl₂O₄ powders at temperatures between 1250 °C and 1375 °C are discussed. The results indicate that, with increasing sintering temperatures, grain growth and densification occurred up to 1275 °C, and above 1350 °C, rapid grain and pore growth occurred. The in-line light transmission increases with the densification and decreases with the grain/pore growth, which can be as high as 70% at the wavelength of 550 nm and 82% at the wavelength of 2000 nm, respectively. As the sintering temperature increases, Q×f and dielectric constant ε_r values increase to maximum and then decrease respectively, while τ_f value is almost independent of the sintering temperatures and remains between −77 and −71 ppm/°C. The optimal microwave dielectric properties (ε_r=8.38, Q×f=54,000 GHz and τ_f=−74 ppm/°C) are achieved for transparent MgAl₂O₄ ceramics produced by spark plasma sintering at 1325 °C for 20 min.     

Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature

The preparation and dielectric properties of 3ZnO·B₂O₃ ceramics were investigated. Dense 3ZnO·B₂O₃ ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B₂O₃ structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?_r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τ_f ∼ −80 ppm/°C. The dependences of relative density, ?_r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B₂O₃ ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate.     

Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

Low-temperature firing and microwave dielectric properties of 16CaO–9Li2O–12Sm2O3–63TiO2 ceramics with V2O5 addition

The sintering behaviors and microwave dielectric properties of the 16CaO–9Li₂O–12Sm₂O₃–63TiO₂ (abbreviated CLST) ceramics with different amounts of V₂O₅ addition had been investigated in this paper. The sintering temperature of the CLST ceramic had been efficiently decreased by nearly 100 °C. No secondary phase was observed in the CLST ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLST ceramics with small amounts of V₂O₅ addition could be well sintered at 1200 °C for 3 h without much degradation in the microwave dielectric properties. Especially, the 0.75 wt.% V₂O₅-doped ceramics sintered at 1200 °C for 3 h have optimum microwave dielectric properties of Kr = 100.4, Q × f = 5600 GHz, and TCF = 7 ppm/°C. Obviously, V₂O₅ could be a suitable sintering aid that improves densification and microwave dielectric properties of the CLST ceramics.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Effects of aqueous gelcasting and dry pressing on the sinterability and microwave dielectric properties of ZnAl2O4-based ceramics

The effects of aqueous gelcasting and dry pressing on the sinterability and microwave dielectric properties of 90 wt.% (0.75ZnAl₂O₄-0.25TiO₂)-10 wt.% MgTiO₃(ZTM) ceramics have been investigated. It is found that aqueous gelcasting could effectively decrease the sintering temperature of ZTM ceramics by 100 °C and acquire more excellent microwave dielectric properties of ZTM ceramics compared with conventional dry pressing. X-ray diffraction (XRD), environment scanning electron microscope (ESEM) and energy-dispersive X-ray spectroscopy (EDX) were used to analyze the phase compositions and microstructures of ZTM ceramics. The results illustrate that the phase compositions are completely uniform no matter what sintering temperature and forming method are adopted. However, the densities, ?_r and Q × f values are greatly affected by different forming methods, whereas there are few effects on the τ_f values. It is observed that ZTM ceramics prepared by aqueous gelcasting exhibit greater densities, more excellent and stable microwave dielectric properties compared with that prepared by dry pressing at the relative low sintering temperatures. However, when the sintering temperature becomes higher, the opposite phenomenon would gradually appear.     

Microwave dielectric properties and structure of ZnO-Nb2O5-TiO2 ceramics

Ceramic samples based on ZnO-Nb₂O₅-TiO₂ compositions have been prepared using solid state ceramic route. The work was carried out over a wide range of initial ZnNb₂O₆ and Zn_0.17Nb_0.33Ti_0.5O₂ compounds concentration. The crystal structure and microstructure developments were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was shown that the phase compositions of the samples present itself a columbite type and mixture of two phases—solid solutions of columbite and rutile types.The sintering behavior, permittivity, its temperature coefficients and quality factor had been characterized for ceramic samples in depending on compositions. The permittivity of the samples in this system is within the limits from 24 to 80, τ_? from 150 to −560 ppm/°C. For the samples with τ_? ∼ 0, ?_r ∼ 43.8 and Q·f = 35000 GHz at f = 9 GHz. The comparatively low sintering temperature (≤1080 °C) and high dielectric properties in microwave range make these ceramics promising for application in electronics.     

Temperature compensating ZnAl2O4-Co2TiO4 spinel-based low-permittivity microwave dielectric ceramics

TiO₂, CaTiO₃ and SrTiO₃ were added to the 0.79ZnAl₂O₄-0.21Co₂TiO₄ (ZACT in abbreviation) system to control its temperature coefficient of resonant frequency (τ_f). The effects of these additions on sinterability, phase compositions and microwave dielectric properties of the ceramics synthesized by the solid-state reaction were investigated. The results show that TiO₂, CaTiO₃ and SrTiO₃ can all reduce the densification temperature of the ZACT ceramics within the scope from 75 to 150 °C. CoTi₂O₅ second-phase with negative τ_f value appears in the TiO₂ doped ZACT system, which inhibits TiO₂ addition's function for adjusting τ_f value of ZACT ceramics. While, CaTiO₃ and SrTiO₃ can both tune effectively τ_f value to obtain temperature-stable materials.     

Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics

The microwave dielectric properties of (Ba_xMg_1−x)(A_0.05Ti_0.95)TiO₃ (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q×f value decreased. The sintered (Ba_xMg_1−x)(Zr_0.05Ti_0.95)TiO₃ (called B_xMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (Ba_xMg_1−x)(Sn_0.05Ti_0.95)TiO₃ (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τ_f value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_0.1Mg_0.9)(Sn_0.05Ti_0.95)TiO₃ ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τ_f value of −3.3 ppm/°C sintered at 1210 °C for 4 h.     

Synthesis of Zn3Nb2O8 ceramics using a simple and effective process

Synthesis of Zn₃Nb₂O₈ ceramics using a simple and effective reaction-sintering process was investigated. The mixture of ZnO and Nb₂O₅ was pressed and sintered directly without any prior calcination. Single-phase Zn₃Nb₂O₈ ceramics could be obtained. Density of these ceramics increased with soaking time and sintering temperature. A maximum density 5.72 g/cm³ (99.7% of the theoretical density) was found for pellets sintered at 1170 °C for 2 h. Pores were not found and grain sizes >20 μm were observed in pellets sintered at 1170 °C. Abnormal grain growth occurred and grains >50 μm could be seen in Zn₃Nb₂O₈ ceramics sintered at 1200 °C for 2 h and 1200 °C for 4 h. Reaction-sintering process is then a simple and effective method to produce Zn₃Nb₂O₈ ceramics for applications in microwave dielectric resonators.     

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Ba₄Nd_9.33Ti₁₈O₅₄·x wt%Al₂O₃ (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of Al₂O₃ on the microstructure and microwave dielectric properties of Ba₄Nd_9.33Ti₁₈O₅₄ (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al₂O₃ additive gave rise to a second phase BaAl₂Ti₅O₁₄ (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al₂O₃ additive had improved the dielectric properties of the BNT ceramics: increased the Q×f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q×f=12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al₂O₃ added after sintering at 1320 °C for 4 h.     

Sintering behavior and microwave dielectric properties of a new low-permittivity ceramic system Ca(Mg1−xAlx)(Si1−x/2Alx/2)2O6

The diopside ceramics with a formula of Ca(Mg_1−xAl_x)(Si_1−x/2Al_x/2)₂O₆ (x=0.01–0.3) were synthesized via a traditional solid-state reaction method, and their solid solubility, sintering behavior and microwave dielectric properties were investigated. The results revealed that the solubility limit of Al₂O₃ in Ca(Mg_1−xAl_x)(Si_1−x/2Al_x/2)₂O₆, which is defined as x, was between 0.15 and 0.2, and a second phase of CaAl₂SiO₆ presented when the x value reached 0.2. Appropriate Al³⁺ substitution for Mg²⁺ and Si⁴⁺ could promote the sintering process and lower the densification temperature, and a broadened densification temperature range of 1250–1300 °C was obtained for the compositions of x=0.08–0.15. With the increase of the x value, the dielectric constant (ε_r) increased roughly linearly, and the temperature coefficient of frequency (τ_f) showed a rising trend. The Q×f values increased from 57,322 GHz to 59,772 GHz as the x value increased from 0.01 to 0.08, and then they were saturated in the range of x=0.08–0.2. Further increase of the x value (x≥0.25) deteriorated the microwave dielectric properties. Good microwave dielectric properties of ε_r=7.89, Q×f=59,772 GHz and τ_f=−42.12 ppm/°C were obtained for the ceramics with the composition of x=0.08 sintered at 1275 °C.     

Electrochemical performance of the carbon coated Li3V2(PO4)3 cathode material synthesized by a sol-gel method

A carbon coated Li₃V₂(PO₄)₃ cathode material for lithium ion batteries was synthesized by a sol-gel method using V₂O₅, H₂O₂, NH₄H₂PO₄, LiOH and citric acid as starting materials, and its physicochemical properties were investigated using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), transmission electron microscope (TEM), and electrochemical methods. The sample prepared displays a monoclinic structure with a space group of P2₁/n, and its surface is covered with a rough and porous carbon layer. In the voltage range of 3.0-4.3 V, the Li₃V₂(PO₄)₃ electrode displays a large reversible capacity, good rate capability and excellent cyclic stability at both 25 and 55 °C. The largest reversible capacity of 130 mAh g⁻¹ was obtained at 0.1C and 55 °C, nearly equivalent to the reversible cycling of two lithium ions per Li₃V₂(PO₄)₃ formula unit (133 mAh g⁻¹). It was found that the increase in total carbon content can improve the discharge performance of the Li₃V₂(PO₄)₃ electrode. In the voltage range of 3.0-4.8 V, the extraction and reinsertion of the third lithium ion in the carbon coated Li₃V₂(PO₄)₃ host are almost reversible, exhibiting a reversible capacity of 177 mAh g⁻¹ and good cyclic performance. The reasons for the excellent electrochemical performance of the carbon coated Li₃V₂(PO₄)₃ cathode material were also discussed.     

Effects of CaSiO3 addition on sintering behavior and microwave dielectric properties of Al2O3 ceramics

The effects of CaSiO₃ addition on the sintering behavior and microwave dielectric properties of Al₂O₃ ceramics have been investigated. The addition of CaSiO₃ into Al₂O₃ ceramics resulted in the emergence of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which acting as liquid sintering aids can effectively lower the sintering temperature of Al₂O₃ ceramic. The Q × f value of Al₂O₃-CaSiO₃ ceramics decreased with the CaSiO₃ addition increasing because of the lower Q × f value of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈. Compared with the pure CaSiO₃ ceramic, the Al₂O₃-CaSiO₃ ceramic with 20 wt% CaSiO₃ addition possessed good dielectric properties of ?_r = 9.36 and Q × f = 13,678 GHz at the similar sintering temperature.     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Effects of heating rate on microstructures and microwave dielectric properties of (1 − x)ZnAl2O4–xTiO2 (x = 0.21) ceramics

(1 − x)ZnAl₂O₄–xTiO₂ (x = 0.21) ceramics were synthesized at 1500 °C for 3 h using the solid-state reaction at a heating rate from 1 to 7 °C/min. The effects of heating rate on the microstructure, phase composition and oxidation state of titanium in the ceramics were investigated. The XRD results show that this system is composed of two phases, i.e. ZnAl₂O₄ spinel and rutile. The “black core” phenomenon resulting from reduction of Ti⁴⁺ ion valence appears after the ceramics are sintered at the speed of 1 and 3 °C/min. As the heating rate increases, the density and quality factor (Q·f) increase initially and reach the maximum value when the heating rate is 5 °C/min, and then reduce quickly to the minimum, while the dielectric constant (?_r) and temperature coefficient of resonator frequency (τ_f) nearly do not change. The optimal microwave dielectric properties can be achieved in (1 − x)ZnAl₂O₄–xTiO₂ (x = 0.21) ceramics sintered at a heating rate of 5 °C/min with an ?_r value of 11.6, a Q·f value of 74,000 GHz (at about 6.5 GHz), and a τ_f value of −0.4 ppm/°C.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

ZnLi2/3Ti4/3O4: A new low loss spinel microwave dielectric ceramic

A new low loss spinel microwave dielectric ceramic with composition of ZnLi_2/3Ti_4/3O₄ was synthesized by the conventional solid-state ceramic route. The ceramic can be well densified after sintering above 1075 °C for 2 h in air. X-ray diffraction data show that ZnLi_2/3Ti_4/3O₄ ceramic has a cubic structure [Fd-3m (227)] similar to MgFe₂O₄ with lattice parameters of a = 8.40172 Å, V = 593.07 Å³, Z = 8 and ρ = 4.43 g/cm³. The best microwave dielectric properties can be obtained in ceramic with relative permittivity of 20.6, Q × f value of 106,700 GHz and τ_f value of −48 ppm/°C. The addition of BaCu(B₂O₅) (BCB) can effectively lower the sintering temperature from 1075 °C to 900 °C and does not induce much degradation of the microwave dielectric properties. Compatibility with Ag electrode indicates that the BCB added ZnLi_2/3Ti_4/3O₄ ceramics are good candidates for LTCC applications.