Low temperature ordering of FePt films by in-situ heating deposition plus post deposition annealing

FePt thin films with 40 nm thickness were prepared on thermally oxidized Si (001) substrates by dc magnetron sputtering at the nominal growth temperature 375 °C. The effects of annealing on microstructure and magnetic properties of FePt thin films were investigated. The as-deposited FePt thin films show soft magnetic properties. After the as-deposited FePt thin films were annealed at various temperatures and furnace cooled, it is found that the ordering temperature of L1₀ FePt phase could be reduced to 350 °C. For FePt thin films annealed at 350 °C, the in-plane and out-of-plane coercivities of the films increased to 510 and 543 kA/m, respectively, and the films had hard magnetic properties. A highly (001) orientation was obtained, when FePt thin films were annealed at 600 °C. And the hysteresis loops of FePt thin films annealed at 600 °C show out-of-plane magnetic anisotropy.     

Ion sputter etching of ZnO:Ga thin film surfaces

In this article the modification of surface morphology of ZnO:Ga (GZO) thin films by ion sputter etching is presented. GZO thin films were prepared at room temperature on Corning glass substrates by both normal and oblique angle RF diode sputtering from ZnO:2%Ga ceramic target in Ar gas. Ion sputter etching was performed by RF re-sputtering of GZO thin films on substrates. During RF sputter etching, Ar pressure of 1.3 Pa and RF power of 250 W were kept constant, only the time of sputter etching was changed. Ion sputter etching had remarkable influence on surface morphology of GZO thin films: increase of roughness R_q and the “homogenization” of film surfaces, i.e. skewness (R_sk) and spikiness (R_ku) parameters (R_sk ≈ 0/R_ku ≈ 3).Surface root-mean-square roughness (R_q) increased from 15.3 nm (after sputter deposition) to 29.1 nm (after ion sputter etching). For obliquely thin films increased from 16.5 nm (after sputter deposition) to 38.2 nm. Changes of these parameters R_q, R_sk, R_ku influenced optical properties of GZO films, increased Haze parameter up to values 7.7% and width of optical band gap 3.44 eV, respectively.     

Effect of AlN layer thickness on structure and magnetic properties of FePt/AlN multilayers

FePt (50 nm) and [FePt(xnm)/AlN(1, 2, 3 nm)]₁₀ (x=2, 3 nm) films were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of AlN layer thickness on structure and magnetic properties of FePt/AlN multilayers. Superlattice (0 0 1) peaks can be found in the grazing incidence X-ray diffraction of FePt and [FePt (3 nm)/AlN (1, 2, 3 nm)]₁₀ films, which indicate that the FCC phase has been partially transformed into ordered L1₀ phase. Compared with the single layer FePt film, superlattice (0 0 1) peaks of FePt/AlN multilayers are weak and wide, which indicates that the introducing of AlN hinders the growth of FePt particle, and also shows the introducing of AlN is not beneficial to the transformation from FCC phase to L1₀ phase. In addition, the low-angle XRD spectra show the layered structure of FePt/AlN has been broken after annealing. The coercivities, particle size, intergrain exchange interactions of FePt/AlN films are decreased with increasing AlN layer thickness.     

Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al₂O₃ and SiO₂ additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1₀ FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11¯0]//FeSi(100)[11¯0]//MgO(100)[001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54° to the surface. Films with SiO₂ addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al₂O₃ addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al₂O₃ composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed.The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media.     

Structure and dielectric properties of sputtered bismuth magnesium niobate thin films

The Bi_1.5MgNb_1.5O₇ (BMN) thin films were prepared on platinum coated sapphire by rf magnetron sputter deposition. Effects of substrate temperature, sputter pressure and O₂/(O₂ + Ar) mixing ratio on phase structures and dielectric properties of thin films were investigated. The results indicated that sufficiently high substrate temperature and low sputter pressure would facilitate the formation of cubic pyrochlore in BMN thin films. Meanwhile, the appropriate O₂/(O₂ + Ar) mixing ratio of sputter atmosphere was required. The deposited Bi_1.5MgNb_1.5O₇ cubic pyrochlore thin films with (222) oriented texture exhibited large tunability of ~ 50% at a maximum applied bias field of 1.5 MV/cm, with low dielectric loss of ~ 0.007. The temperature and frequency dependent dielectric measurements indicated that no noticeable dielectric dispersion was detected in BMN cubic pyrochlore thin films.     

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

Alumina (Al₂O₃) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al₂O₃-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed.     

Microstructural enhancement of high coercivity L1(0)-FePt films for next-generation magnetic recording media

The effects of substrate Ar-ion milling and Ta adhesion layer on the microstructural and magnetic properties of L1(0)-FePt films prepared on Si, SiO2, and glass substrates were investigated. It was discovered that the relatively large in-plane surface roughness of CrRu/MgO/FePt films deposited on Si substrates was due to the deformation of the CrRu layer when the composition was heated to 550 degrees C. More than an order of magnitude improvement for the in-plane surface roughness was achieved when substrate Ar-ion milling or Ta adhesion layer was incorporated into the process. While the Ta adhesion layer proved to be detrimental to the (200) growth of the CrRu layer, optimal FePt film properties with coercivity values larger than 2 Tesla and out-of-plane roughness less than 1 nm were achieved when only substrate Ar-ion milling was implemented.     

Granular L10 FePt nanocomposite films fabricated by rapid thermal annealing

Granular (FePt)_100−x-(NiO)_x nanocomposite thin films with x = 0 − 42 vol% were fabricated on a natural-oxidized Si(100) substrate. It is found that both the coercivity and FePt domain size decrease with increasing NiO content for the (FePt)_100−x-(NiO)_x films. When the FePt-NiO composite film with NiO content of 10.4 vol% is post-annealed at 750 °C with a high heating ramp rate of 100 °C/s, the in-plane coercivity (H_c//) and perpendicular coercivity (H_c⊥) of the FePt films are 513 and 430 kA/m, respectively. On the other hand, we used conductive atomic force microscope (CAFM) to confirm that the NiO compound is distributed at boundary of FePt particles that will constrain the domain size of FePt and decrease the exchange coupling interactions between FePt magnetic particles.     

Optical and dielectric properties of CuAl2O4 films synthesized by solid-phase epitaxy

The synthesis and properties of CuAl₂O₄ thin films have been examined. The CuAl₂O₄ films were deposited via reactive direct current magnetron sputter using a CuAl₂ target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl₂O₄ was determined to be ∼ 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be ∼ 20-23 at 1-100 kHz.     

Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 °C. When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 °C. The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 °C to 350 °C), though the ordering degree and coercivity of the films increased with increased substrate temperature.     

Growth and characterization of Ba(Cd1/3Ta2/3)O3 thin films

We have synthesized stoichiometric Ba(Cd_1/3Ta_2/3)O₃ [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial [BCT (100) || MgO (100) and BCT (010) || MgO (010)] when grown with an elevated substrate temperature of 635 °C, an enhanced oxygen pressure of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. A dielectric constant of 32 was inferred from low-frequency capacitance measurements of a planar interdigital metal pattern. Analysis of ultra violet optical absorption results indicates that BCT has a bandgap of 4.9 eV; while the interference pattern in the visible range is consistent with a refractive index of 2.1. Temperature-dependent electrical measurements indicate that the BCT films have a room temperature conductivity of 3 × 10^− 12 Ω^− 1 cm^− 1 with a thermal activation energy of 0.7 eV. A mean particle size of ~ 100 nm and a root mean square surface roughness of 5 to 6 nm were measured using Atomic Force Microscopy.     

Film thickness dependence of microstructures and magnetic properties in single-layered FePt films by in-situ annealing

The FePt films with various thicknesses (t) of 5 to 50 nm are deposited on Si(100) substrate without any underlayer by in-situ annealing at substrate temperature (Ts) of 620 °C. A strong (001) texture of L1₀ FePt film is obtained and presents high perpendicular magnetic anisotropy as the film thickness increases to 30 nm. By further increasing the thickness to exceed 30 nm, the (111) orientation of L1₀ FePt is enhanced greatly, indicating that the quality of perpendicular magnetic anisotropy degrades when the thickness of the FePt film is greater than 30 nm. The single-layered FePt film with thickness of 30 nm by in-situ depositing at 620 °C shows good perpendicular magnetic properties (perpendicular coercivity of 1033 kA/m (13 kOe), saturation magnetization of 1.08 webers/m² and perpendicular squareness of 0.91, respectively), which reveal its significant potential for perpendicular magnetic recording media.     

Self-assembled nano-size FePt islands for ultra-high density magnetic recording media

To find a method to form nano-size FePt alloy for ultra-high density magnetic recording media, this work concentrated on the formation mechanisms of nano-island FePt films on amorphous glass substrates. FePt films of different thicknesses (1-10 nm) were deposited on amorphous glass substrates and post-annealed at 700 °C for 10 and 30 min. The configuration of the film changed during the annealing process due to the surface energy difference between the glass substrate and FePt alloy. Investigation of the microstructures and magnetic properties of the ordered L1₀ FePt films revealed that the 1 nm FePt film annealed at 700 °C for 10 min had perpendicular magnetic anisotropy and good reproducibility of forming well-separated FePt nano-size islands for ultra-high density magnetic recording media.     

Coercivity variation in exchange-coupled Fe/FePt bilayer with perpendicular magnetization

The soft/hard Fe/FePt film with perpendicular magnetization has been deposited on a glass substrate. The (001) oriented L1₀ FePt film was obtained when annealed by rapid thermal process at 800 °C and a Fe layer was deposited at room temperature with thicknesses of 2 nm to 20 nm. Controlling the Fe layer thickness allowed modification of the hysteresis loops from out-of-plane rigid magnet to in-plane exchange-spring like magnet due to the nanometer scale interface coupling. When the Fe layer thickness increased to 2 nm, the out-of-plane coercivity is reduced to 5.9 kOe but the remanence ratio (0.98) is still high. The Fe (2 nm)/FePt film shows perpendicular magnetization with linear in-plane hysteresis loop. The remanence ratio is reduced to 0.85 when the Fe layer thickness increased to 5 nm. When the Fe layer thickness was varied up to 10-20 nm, the in-plane hysteresis loop shows exchange-spring like behavior with two-step magnetization reversal processes. The films with perpendicular coercivity were moderated by the thickness of soft magnetic layer.     

Etch characteristics of FePt magnetic thin films using inductively coupled plasma reactive ion etching

Etch characteristics of L10 FePt thin films masked with TiN films were investigated using an inductively coupled plasma (ICP) reactive ion etching in a CH₃OH/Ar plasma. As the CH₃OH gas was added to Ar, the etch rates of FePt thin films and TiN hard mask gradually decreased, and the etch profile of FePt films improved with high degree of anisotropy. With increasing ICP rf power and dc-bias voltage to substrate and decreasing gas pressure, the etch rate increased and the etch profile becomes vertical without any redepositions or etch residues. Based on the etch characteristics and surface analysis of the films by X-ray photoelectron spectroscopy, it can be concluded that the etch mechanism of FePt thin films in a CH₃OH/Ar gas does not follow the reactive ion etch mechanism but the chemically assisted sputter etching mechanism, due to the chemical reaction of FePt film with CH₃OH gas.     

The fabrication of ZnO/MgO multilayer films on Si (1 1 1) by PLD

ZnO/MgO multilayer thin films were fabricated on Si (1 1 1) substrates by pulsed laser deposition (PLD) at 600 °C for 30 min. The oxygen pressure and laser repetition were kept at 20 Pa and 5 Hz, respectively. The PL measurements suggest that the UV peaks have a blue excursion of 4 nm from 379 to 375 nm, compared with ZnO films. The XRD analysis indicates that the position of ZnO (0 0 2) peaks from ZnO/MgO multilayer films have about 0.12° shift from 34.421°, that of ZnO films, to 34.545°. From TEM images, the thickness of the films is about 200 nm. By HRTEM and SAD images, the crystal phases and the polycrystalline state were observed in the multilayer films.     

Effect of substrate on processing of multi-gun sputter deposited, near-stoichiometric Ni2MnGa thin films

Near-stoichiometric Ni₂MnGa thin films were sputter deposited with a multi-gun sputter deposition system onto sapphire, silicon dioxide and silicon substrates and exposed to heat treatments in vacuum. The multi-gun setup was proven to be feasible for switching compositions quickly and reliably. Using chemical, morphological, magnetic and structural characterisation methods the effects of the different substrates on the Ni₂MnGa film properties as a function of heat treatment temperature were studied: sapphire and silicon dioxide provided a metallurgically inert substrate for Ni₂MnGa thin films and resulted in films showing room temperature magnetizations of up to  ~ 350 kA/m and austenitic/martensitic structures upon heat treatments at 700 °C. The highest mechanical stability of Ni₂MnGa occurred on sapphire substrates, due to the closest match of the thermal expansion coefficients. Silicon substrates led to silicide formation for heating temperatures of 550 °C and above, leading to the loss of ferromagnetism and the austenite/martensite structure in the films.     

Structural and discharging properties of MgO thin films prepared by pulsed laser deposition

In this work, pulsed laser-deposited thin films of MgO were studied for application in plasma display panels. The firing voltage (FV) of discharge cells with MgO films was measured and the film structure was investigated as a function of film deposition conditions. MgO thin films were deposited at oxygen pressure and substrate temperature between 0.02-5 Pa and 260-600 °C, respectively. The structure of thin films was investigated by using X-ray diffraction, X-ray reflection and atomic force microscopy methods. It was found that the FV is strongly correlated with the film deposition conditions and structural properties. In general, the FV values were smaller for the films with higher crystallinity and density. The crystallinity and the density of the films increased when the deposition temperature was raised and the O₂ pressure was reduced. The lowest FV values (~ 120 V) were obtained at the growth temperature of 550 °C and at O₂ pressures below 1 Pa.     

Deposition of amorphous carbon nitride films using Ar/N2 supermagnetron sputter

Amorphous carbon nitride (a-CN_x) films were formed by supermagnetron sputter deposition using N₂ and/or Ar gases. Supplying rf power with a substrate-holding electrode (bias sputter) and lowering the gas pressure were found to be effective at decreasing the optical band gap and increasing the hardness. Nitrogen concentrations of bias sputtered films were about 32-35 mass% (30-100 mTorr). The a-CN_x films deposited for electron field emission showed a low-threshold electric field (E_TH). With the decrease of gas pressure, admixture of Ar to N₂ or the use of pure Ar, and the use of bias sputter, the E_TH of a-CN_x films largely decreased to 11 V/μm (30 mTorr Ar/N₂ bias sputter).     

L10 ordered FePt based double-layered perpendicular recording media with (002) oriented FeCo films as a soft magnetic underlayer

The introduction of the soft magnetic underlayer (SUL) in perpendicular recording technology is to further increase the recording areal density. However, problems such as growth of the uncontrollable recording layer and additional media noise contributed from the SUL could be resulted. In this work, a synthetic antiferromagnetically (SAF) coupled (002) oriented Fe₆₅Co₃₅ film as an SUL was developed for L1₀ ordered FePt based double-layered recording media. The crystallography of hetero-epitaxially grown double-layered media CrRu/(Ru/FeCo)₂/Pt/FePt/Ru was demonstrated. The L1₀ ordered FePt based double-layered perpendicular recording media with SAF coupled FeCo films as the SUL were developed.