60 Gbit/s宽带电路交换ASIC芯片设计

文章提出了一种60 Gbit/s宽带电路交换专用集成电路(ASIC)芯片的设计实现方案.针对设计芯片速度快、规模大和功耗大等特点,给出了采用流水线设计思想和优化结构处理技术的电路设计解决方案.同时还给出了采用现场可编程门阵列(FPGA)芯片对设计电路进行功能验证的结果和ASIC流片的基本数据.     

射频宽带低噪声放大器的设计与仿真

介绍了一种射频宽带低噪声放大器的设计过程,包括稳定性分析、偏置电路设计和匹配电路设计等内容.设计采用E-PHEMT晶体管(ATF-55143)器件模型和其他元件模型.通过采用ADS技术进行电路和电磁仿真,结果表明设计的放大器完全满足性能指标要求.     

无线传感网络中低功耗处理器的设计和优化

采用90nm工艺设计实现了应用于无线传感网络中的低功耗处理器.为了减小功耗,采用了以下两种方法:(1)采用门控时钟技术来降低动态功耗;(2)采用多阈值电压单元库来减小漏电功耗.通过比较给出了设计优化结果.     

无线传感网络中低功耗处理器的设计和优化

采用90nm工艺设计实现了应用于无线传感网络中的低功耗处理器.为了减小功耗,采用了以下两种方法:(1)采用门控时钟技术来降低动态功耗;(2)采用多阈值电压单元库来减小漏电功耗.通过比较给出了设计优化结果.     

基于CPU和FPGA/CPLD结构设计电子系统

介绍应用CPU和现场可编程逻辑阵列(FPGA)/复杂可编程逻辑器件(CPLD)结合设计电子系统的优势.基于AT89C51单片机系统实现FLEK10K的在线可重配置(ICR),PC机和AT89C51串行通信实现在线升级,PC机下载配置实现在线调试.采用直接数字频率合成(DDS)技术,实现波形发生器.应用电子设计自动化(EDA)技术,以FPGA/CPLD器件为核心,采用FPGA设计的DDS不仅可方便地实现各种比较复杂的调频、调相和调幅功能,而且具有良好的实用性.文中给出了系统的工作原理和设计方法.     

平面一体化集成Ka频段卫星通信终端ODU设计

介绍了一个Ka频段卫星通信终端室外单元(ODU)的平面一体化集成设计技术.通过采用电路和结构的平面一体化集成技术、整体水密性设计和基于热仿真的散热优化设计,实现了设备的小型化、轻重量和低功耗.最终完成了两套样机研制.测试样机的技术指标满足设计要求,发射功率大于33 dBm,噪声系数小于2.4dB(常温),体积小于130...     

"龙腾"S2微处理器测试结构设计

介绍了"龙腾"52微处理器测试结构设计方法,详细讨论了采用全扫描测试、内建自测试(BIST)等可测性设计(DFT)技术.该处理器与PC104全兼容,设计中的所有寄存器采用全扫描结构,设计中的存储器采用内建自测试,整个设计使用JTAG作为测试接口.通过这些可测性设计,使芯片的故障覆盖率达到了100%,能够满足流片后测试需求.     

MEMS陀螺驱动数字闭环ASIC设计

针对MEMS陀螺,基于四阶机电结合∑△调制器技术设计了一款驱动数字闭环电路.其中电容/电压转换电路(C/V转换电路)采用了开关电容电路.为了降低C/V转换电路的噪声,采用了相关双采样(CDS)技术和斩波开关技术.仿真结果表明,采用这两项技术后,C/V转换电路的噪声在1 ～ 10 kHz附近达到了约20 zF/√Hz.数字信号处理部分的时钟由锁相环路(PLL)提供,并且片上PLL对陀螺驱动模态谐振频率进行了倍频.采用0.18 μm CMOS工艺制作设计的专用集成电路(ASIC).实验结果表明,驱动闭环电路能够成功起振,电路输出信号的信噪比达到112 dB,1h的稳定性达到2.08×10-4.     

改进型主成份分析外插脉冲响应滤波器设计

外插脉冲响应(EIR)滤波器设计技术是一种低复杂度有限冲击响应(FIR)滤波器设计技术,而基于主成份分析(PCA)的EIR(PCA-EIR)滤波器设计技术是一种有效(算法执行简单,效果较好)的EIR滤波器设计技术.PCA-EIR技术通过对由原型FIR滤波器系数组成的系数矩阵采用PCA技术进行降维来近似合成原型FIR滤波器,以达到降低原型滤波器硬件执行复杂度的目的.本文提出了一种简单有效的改进型PCA-EIR技术,其基本思想是将系数矩阵的前若干列向量保持不变,对剩余部分列向量组成的矩阵采用PCA技术进行降维来合成原型FIR滤波器.所提出改进型PCA-EIR技术的算法执行复杂度与传统PCA-EIR技术相当,且在滤波器频率响应指标基本相等的前提下,改进型PCA-EIR技术节省3.5％-17.5％乘法器和25.6％-51.6％加法器,从而进一步降低了FIR滤波器的硬件执行复杂度.     

PFM开关电源集成电路的抗电磁干扰设计

针对脉冲频率调制(PFM)开关电源(SMPS)集成电路,提出了抗电磁干扰(EMI)设计的两种方法.通过采用零电流检测电路,控制开关电源集成电路中的开关金属氧化物半导体场效应晶体管(MOSFET)在第一个谷底导通,从而降低导通电流的尖峰值.通过采用恒压和恒流设计技术,使开关电源集成电路中的电压和电流得到限制,有助于降低电流纹波.采用CSMC lμm 40 V高压工艺设计了PFM开关电源集成电路SX1618,将以上两种抗电磁干扰设计方法应用在该电路的设计中,并设计了针对性的保护结构.完成SX1618整体仿真和版图设计后进行了流片和封装,并将其应用在实际的开关电源中,经测试,开关电源的抗电磁干扰能力符合标准.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.