Microstructure and electrical properties of ZnO-based varistors prepared by high-energy ball milling

ZnO-based varistor ceramics were prepared at sintering temperatures ranging from 900 °C to 1,300 °C, by subjecting the mixed oxide powders to high-energy ball milling (HEBM) for 0, 5, 10 and 20 h, respectively. Varistor ceramics prepared by HEBM featured denser body, better electrical properties sintered at low-temperature than at traditional high-temperature. The high density is due to the refinement of the crystalline grains, the enhanced stored energy in the powders coming from lattice distortion and defects as well as the promotion of liquid-phase sintering. Good electrical properties is attributed to proper microstructure formed at low-temperature and improved grain boundary characteristics resulting from HEBM. With increasing sintering temperatures, the electrical properties and density became worse due to the decrease in amount of Bi-rich phase. Temperature increased up to 1,200 °C or above, the Bi-rich phase vanished and the ceramics exhibited very low nonlinear coefficient.     

Nanostructured constituents of ZnO-based varistors prepared by mechanical attrition

Nanostructured powders, with crystallite size of ZnO, spinel and γ-Bi₂O₃ phases below 100 nm, were obtained by the mechanical attrition of ZnO varistor powders prepared by method of directed synthesis of the constituent phases. Powders were further sintered and the resulting varistors showed excellent electrical characteristics with the non-linearity coefficients reaching 45, low values of the leakage current and density reaching 99% of the theoretical value.     

Importance of oxygen atmosphere to recover the ZnO-based varistors properties

A methodology to recover the non-ohmic properties of ZnO based varistors after degradation with long and short duration pulses was proposed in this work. The basic idea consists in submitt the degraded ceramics at different temperatures and oxygen flows. Thermal treatment at 900 °C for 2 h with oxygen flow of 15 l/h allowed to obtain better non-linear coefficient (α = 52.5) compared to the standard sample. Rietveld refinement showed that with the thermal treatment, the oxygen species and the β-Bi₂O₃ phase, lost in the degradation process, are recovered in the grain boundary.     

Effect of spark plasma sintering on microstructure and electrical properties of ZnO-based varistors

Conditions for the elaboration of varistors by spark plasma sintering (SPS) are investigated, using 70 nm zinc oxide nano-particles. For this purpose, the system constituted of zinc oxide, bismuth oxide and other metal oxide is used. Material sintering has been performed by SPS at various temperatures and dwell times. Determination of the microstructure and chemical composition of the as-prepared ceramics are characterized by scanning electron microscopy and X-ray diffraction analysis. Micro-structural analysis revealed the presence of ZnO, spinel and bismuth rich phases. ZnO based Varistor samples sintered within climb speeds 100 and 400 °C/min are compared. The nonlinear electrical characteristics, current–voltage, are measured. The breakdown voltage of the varistors strongly depends on grain sizes. The results show that the best varistors are obtained by SPS at sintering temperatures ranging from 900 to 1200 °C.     

氢化燃烧合成镁基储氢合金的电化学性能的研究

研究了氢化燃烧合成Mg2NiH4产物的电化学性能，并探索了机械球磨处理对产物电化学性能的影响。电化学测试表明，HCS产物不经任何处理，最大放电容量仅为45.13mAh／g；产物球磨后最大放电容量和高倍率放电能力得到提高，如产物经球磨1h后，最大放电容量增至259．24mAh／g，产物添加3％（质量分数）的石墨球磨5h，最大放电容量增加了10倍以上，达到481．50mAh/g。     

Electrical properties and degradation phenomena of glass-doped ZnO chip varistors

Several glass additives with compositions in the PbO---B₂O₃---ZnO---SiO₂ system were applied to multilayer type ZnO ceramic chip varistors which had been manufactured using the ceramic green-sheet lamination technique. Measurements of capacitance-voltage (C-V), current voltage (I-V) and degradation behavior, as well as microstructural observations, were performed. It was found that specimens into which the above-mentioned glasses were incorporated had good surgewithstanding capability, with the exception of samples including Zn---B---Si glass. The electrical properties of speciments deteriorated gradually with increasing glass content. The addition of glasses improved the thermal stability of ZnO varistors except for G4 glass-doped sample (60 w/oPbO−12 w/oB₂O₃−605w/oZnO). Stable varistors with good nonlinearity parameters were obtained by combining the glass compositions and other additives.     

Microstructural and electrical properties of varistors prepared from coated ZnO nanopowders

This paper describes a solution-based technique for fabrication of varistor grade composite nanopowders. The method consists of coating major varistor dopants on the surface of the ZnO nanoparticles. As a result, a homogenous mixture of dopants and ZnO nanoparticles will be achieved. TEM results indicated that a composite layer of dopants with the average particle size of 9 nm on the surface of ZnO nanoparticles has been successfully prepared. Sintering of the coated powders was performed in temperatures as low as 850 °C and final specimens with average particle size of 900 nm and density of 98.5% were achieved. In comparison to conventional mixing, varistors prepared from coated nanopowders exhibited superior electrical properties and microstructure homogeneity. The improvement of electrical properties can be attributed to small grain size, homogenous distribution of dopants and elimination of large Bi-Pockets. In addition, the processing route of schottky barrier formation is quite different from what is generally considered as the method of barrier formation in ZnO grain boundaries.     

Microstructure, electrical properties, and dc aging characteristics of Tb4O7-doped ZnO-based varistors

The microstructure, electrical properties, and dc-accelerated aging characteristics of Tb₄O₇-doped ZnO-based varistors were investigated for different Tb₄O₇ amounts and sintering temperatures. The sintered density increased with increasing Tb₄O₇ amount and sintering temperature. The average grain size decreased with increasing Tb₄O₇ amount and increased with increasing sintering temperature. The varistor voltage and nonlinear coefficient increased with increasing Tb₄O₇ amount and decreased with increasing sintering temperature. The stability was worse with increasing Tb₄O₇ amount for the varistors sintered at 1,300 °C. The 0.5 mol% Tb₄O₇-doped varistors sintered at 1,350 °C exhibited a good stability for dc-accelerated aging stress of 0.95 V _{1 mA}/150 °C/24 h.     

Electrical and thermomechanical properties of materials based on nonstoichiometric titanium carbide prepared by self-propagating high-temperature synthesis

This paper examines the effect of the chemical and phase compositions of nonstoichiometric titanium carbide prepared by self-propagating high-temperature synthesis on the electrical and thermophysical properties of polymer compounds. Doping of titanium carbide with trace amounts of nitrogen raises the conductivity of the polymer compounds. The addition of epoxy to the polymer matrix markedly reduces the thermal expansion of the material. The proposed materials can be used at temperatures of up to 300–350°C.     

脉冲激光沉积氮化铝薄膜的电学性能研究

采用脉冲激光沉积(PLD)技术在硅片上合成了AlN薄膜.X射线衍射(XRD)结果证实制备的AlN薄膜具有(002)择优取向的六方纤锌矿晶体结构,并且结晶质量随Si衬底温度的提高而改善.电流-电压(I-V)、电容-电压(C-V)、极化曲线结果表明室温生长的AlN薄膜的击穿场强约2.5MV/cm,同时呈现明显的极化现象(类铁电),对应矫顽场强为150kV/cm,剩余极化为0.002C/m2.晶态AlN存在较强的自发极化,薄膜中可动电荷密度高,据此提出了动态电荷模型,指出较大的AlN薄膜极化回线是由于可动电荷在电场中的再分布形成的,因而有别于铁电材料.     

Electrical properties of silver selenide thin films prepared by reactive evaporation

The electrical properties of silver selenide thin films prepared by reactive evaporation have been studied. Samples show a polymorphic phase transition at a temperature of 403 ± 2 K. Hall effect study shows that it has a mobility of 2000 cm²V^?1s^?1 and carrier concentration of 10¹⁸ cm^?3 at room temperature. The carriers are ofn-type. X-ray diffraction study indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to bea= 4.353 Å,b= 6.929 Å andc = 7.805 Å.     

掺杂SnS薄膜的制备及电学性能

硫化锡（SnS）具有很高的光吸收系数和合适的禁带宽度，又无毒性，因此在太阳电池等光电器件中具有潜在应用价值。本文用真空蒸发法制备掺杂的SnS薄膜，掺杂源有Sb、Sb：O3、Se、Te、In、In2O3、Se和In2O3的混合物。对各种掺杂SnS薄膜的厚度、电流-电压（Ⅰ—Ⅴ）特性等进行了表征，并计算了其电阻率和光电导与暗电导的比值（Gphoto／Gdark）。结果表明较有效的掺杂源是Sb，Sb掺杂的薄膜电阻率比纯薄膜的电阻率降低四个数量级，Gphoto／Gdark增加约一倍。同时，研究了Sb掺杂量对SnS薄膜电学性能的影响，表明Sb的最佳掺入量约为1．3wt％～1．5wt％。     

TiC-xNi金属陶瓷的燃烧合成及其热物理性能

利用自蔓延高温燃烧民结合机械厂压力方法制备了TiC-Ni金属陶瓷,研究了ＴiC-Ni金属陶瓷材料的密度,比热度、比热容、热传导以及热膨胀性质随温度和组成的变化关系,结果表明：ＴiC-Ni材料的密度在w(Ni)为２０％时致密性达到最高,材料的比定压热容在浊试温度区内呈线性增加;ＴiC-Ni材料的热扩散率随度的升高基本呈增加趋势,热扩散率随Ｎi含量的增加而增加,热导率的变化与热扩散率的变化有相似的规律,材料的热膨胀系数随温度的升高单调递增,温度上升相同情况下,材料的热膨胀系数随Ｎi含量的增加而增加。     

Thermoelectric properties of ZnO-based materials

Abstracts are not published in this journal     

pH值对溶液燃烧法制备纳米LaFeO3的影响

以硝酸镧和硝酸铁为氧化剂,柠檬酸为燃料,采用溶液燃烧法制备了钙钛矿型LaFeO3.通过XRD和SEM研究了分别以氨水和NaOH溶液为pH调节剂,前驱物溶液pH值对制备的纳米LaFe03粉体的晶相组成和微观形貌的影响.结果表明不同的pH调节剂和前驱物溶液pH值对燃烧产物的晶相组成、晶粒大小和微观相貌都有显著的影响.氨水调...     

Optical properties of ZnO-based core-shell nanostructures

ZnO nanorods were prepared by electrodeposition, and the effect of different shells (MgO and TiO_x) on their optical properties has been studied. Shells have also been prepared using a simple solution based method. The two types of shells exhibited different effects on the optical properties of ZnO nanorods, mainly due to different annealing temperature required for synthesis process. The improvement in the emission intensity from the samples under optical excitation did not result in changes in the emission spectra or increase in emission intensity under electrical excitation for the same bias voltage. However, improved luminance for the same bias current was observed for most core-shell structures.     

Preparation and dielectric properties of B-doped SiC powders by combustion synthesis

The SiC(B) solid solution powders were synthesized via combustion reaction of Si/C system in Ar atmosphere, using boron powder as the dopant and polytetrafluoroethylene as the chemical activator, which were investigated by X-ray diffraction (XRD), scanning electronic microscope (SEM) and Raman spectra. Results show that the prepared powders are C-enriched SiC with C antisites and sp² carbon defects in which the sp² carbon is transformed to the sp³ carbon due to boron doping. The electric permittivities of the prepared powders were determined in the frequency range of 8.2-12.4 GHz. The dielectric real part ?′ and dielectric loss tan δ of undoped powder have maximum values (?′ = 5.5-5.3, tan δ = 0.23-0.20), and decrease with increasing boron content. The mechanism of dielectric loss by doping has been discussed.     

Electrical properties of new organic composites obtained by mechanochemical synthesis

We present new results on organic semiconductive and metallic composites obtained by direct solid-solid charge-transfer (CT) reaction. By this method, samples of arbitrarily large size are readily achievable. In the present study, we consider composites formed from the reaction between the following pairs of donors and acceptors: TTF and iodine, BEDT-TTF and TCNQ, BEDT-TTF and TCNE, BEDT-TTF and AuI as well as BEDT-TTF and AuI₃. Most of the composites show semiconducting properties only. Two of them, however, (BEDT-TTF)/(AuI) and (BEDT-TTF)₂/(AuI₃), exhibit a metallic behavior.     

Pressureless sintering of in-situ toughened Yb α-SiAlON ceramics by adding seed crystals prepared by combustion synthesis

Single-phase Yb α-SiAlON ceramics in-situ toughened by elongated grains were prepared by pressureless sintering, with the crystalline powder prepared by combustion synthesis used as seed crystals. The effects of seed addition on the densification, phase transformation, microstructure development, and mechanical properties of the samples were investigated in detail. From the experimental results, it was found that the added seed crystals could promote the phase transformation and facilitate the growth of elongated grains. By adding seed crystals the fracture toughness of the sintered α-SiAlON ceramics was considerably improved, with no obvious degradation in the bulk density and hardness at the same time.