密度泛函理论研究：高压对β-FeSi2 (100)/Si(001)界面光学性质影响

高压对半导体材料β-FeSi2带隙和光学性质具有很好的调节作用。在本工作中,我们利用密度泛函理论研究了高压对具有Si缺陷结构的β-FeSi2 (100)/Si(001) 界面光学吸收行为的影响。随着压强的增大,光学吸收峰首先减小到一个最小值,然后才慢慢的增大。电子轨道分析表明：电子从价带的最高占据态到导带的最低非占据态的跃迁过程主要发生在界面区域的Fe原子轨道。结构分析表明：这种新奇光吸收行为依赖于施加在β-FeSi2 (100)界面区域的压力,Si(001) 结构可以部分的抵消施加在β-FeSi2 (100) 界面区域的压力,从而造成光吸收峰的下移。但是,当施加的压力足够大时,这种抵消作用开始减弱,从而造成光学吸收峰缓慢的上移。本研究表明压力可以有效的修饰其光学吸收行为。     

量子环中电子的激发能量和跃迁谱线频率

在量子环中电子与体纵光学声子强耦合的情况下,通过求解能量本征方程,得出了电子的基态和第一激发态的本征能量及其波函数.数值计算结果表明:电子的激发能量和跃迁谱线频率随着电子-声子耦合强度的增大而增大,并且随着量子环内径(或外径)的增大而减小。     

两种偶氮苯化合物LB膜的光谱与非线性光学特性

两端具有推拉电子基团的偶氮化合物中的N=N双键提供了优异的电子通道,有利于产生非线性光学效应,并且推拉电子基团对偶氮化合物的非线性光学特性有较大的影响.采用紫外可见吸收和二次谐波产生(SHG)技术研究了两种推-拉"型偶氮苯分子Langmuir-Blodgett(LB)膜的光谱和二阶非线性光学特性.4-硝基-4′-氨基偶氮苯(NAA)和4-羧基-4′-氨基偶氮苯(CAA)分子在亚相表面可以形成稳定的单分子膜,并且能较好地转移到固体基板上形成LB多层膜;由于-NO2比-COOH具有更强的吸电子能力,电子在NAA分子内更容易转移,并形成较大分子偶极矩,分子具有更大的一阶超极化率.实验测得NAA和CAA的二阶非线性系数d33分别为40.8 pm/V和24.2 pm/V,一阶超极化率β分别为1.97×10-29esu和1.17×10-29esu,NAA分子的一阶超极化率约为CAA的1.7倍,实验与理论计算结果符合较好.     

掺杂对二维SiC材料光电性质的影响

利用第一性原理赝势平面波方法计算了Si-C邻 近元素(B、N、Al、P)掺杂二维SiC的几何结构、 电子结构和光学性质。结果表明:掺杂后的二维SiC晶格常数(a、b)、键长及角度均发生了明显变化;同时, 在禁带中引入了杂质能级,导带和价带均向低能方向发生了明显的移动,带隙发生变化,费 米能级附近引入了 杂质的2p及3p态电子。光学性质的计算表明:在低能端B、N、Al掺杂使二维SiC吸收电磁波 的能力明显增 强;静态介电常数增大而能量损失峰降低。以上结果说明可以根据需要利用B、N、Al、P掺 杂来调制二维SiC材料的光电性质。     

含偶氮基团的不对称弯曲型液晶分子的合成及其光谱特性

合成了6个含偶氮基团的具有不同苯环个数的不对称弯曲型液晶分子,用1 H NMR、HRMS表征其结构,采用差示扫描量热法(DSC)和偏光显微镜(POM)研究其液晶性能。考察结果表明:所有化合物均出现了液晶相,特别是含有3个苯环的分子在较低温度下出现了向列相;偶氮基团的吸收光谱在330～360nm出现了较强的由π-π*电子跃迁引起的吸收,在430～450nm出现了较弱的由n-π*电子跃迁引起的吸收,其吸收波长的变化表明分子的弯曲形状和电子分布使分子吸收波长有较大的变化。     

有机紫外半导体PMTC的制备及理论计算研究

进行了有机紫外半导体N-[5-甲基-1,3,4-噻二唑-2-取代]二硫代氨基甲酸钾(PMTC)的制备及FT-IR、Raman、UV-Vis及PL光谱实验表征。对实验测试FT-IR及Raman光谱的振动峰进行了归属,Raman光谱测试发现S-K在152 cm-1有v(S-K-S)伸缩振动。UV-Vis实验光谱表明PMTC在200～350nm波段有紫外吸收,PL实验光谱表明PMTC在340～400 nm波段有明显的紫外发光峰,峰值波长为373 nm,PL谱相对于吸收光谱有Stokes频移。采用密度泛函理论(DFT)方法对PMTC进行了B3LYP/6-31G水平上的分子结构优化、UV-Vis光谱、分子前线轨道、分子电子密度、Mulliken电荷等理论计算。理论研究结果表明:PMTC在UV-Vis波段有三个电子跃迁吸收。前线轨道计算表明PMTC的HOMO的电子主要分布在与K原子相连的两个S原子上,而LUMO轨道的电子主要集中在K原子上,PMTC吸收光子后,产生电子由HOMO至LUMO跃迁的实质是电子由配体(主要是配位S原子)向金属原子K的转移。     

一种新型有机金属化合物的三阶光学非线性研究

为了研究一种新型有机金属化合物(十六烷基三甲基铵)双(1,3-二硫杂环戊烯-2-硫酮-4,5-二硫基)-镍(简称CTNi)的三阶非线性光学性质,配制了浓度为1.0×10-4mol/L的丙酮溶液作为待测样品,采用Z扫描测试技术,在波长为1064 nm,脉宽为40 ps的条件下研究了该样品的三阶非线性光学性质.研究发现,该材料具有很强的饱和吸收特性,其激发态有效吸收截面为eσff=1.47×10-18cm2,相应的非线性吸收系数β=-4.36×10-12m/W.另外,Z扫描曲线显示该材料还具有较强的自散焦效应,其三阶非线性折射系数n2=-1.55×10-18m2/W.     

D-π-A型噁二唑衍生物多光子吸收和多光子荧光特性研究

研究了不对称型有机分子[4-(2-{4[5-(4-叔丁基苯基)-1,3,4-噁二唑2]苯基}-乙烯基)-苯基]-二苯胺的多光子吸收及其荧光特性.该分子具有典型的D-π-A型推拉电子结构,三苯胺基团作为给电子基通过苯乙烯共轭链桥接到吸电子基1,3,4-噁二唑基团.在远离线性吸收区的800～1 570 nm波长范围内,实验结果表明该化合物分子具有明显的双光子吸收、三光子吸收性质和较强的频率上转换荧光.根据非线性透过率法测得该化合物在800 nm的双光子吸收系数为3.95 cm/GW,在1 255 nm的三光子吸收系数为3×10-5cm3/GW2.     

吡啶盐衍生物分子非线性光学性质的理论研究

采用从头算HF/6-31G(d)方法优化吡啶盐衍生物分子,在优化构型的基础上,采用耦合微扰Hartree-Fock(CPHF)方法研究体系的非线性光学性质。通过对体系的电荷分布、前线分子轨道以及吸收光谱等性质的分析,发现给体的给电子能力与跃迁偶极矩以及基态和激发态之间的偶极矩差成正比关系,由二能级公式得到给体的给电子能力与静态一阶超极化率成正比关系。采用单激发组态相互作用方法(CIS)方法研究体系的激发态情况,发现给体的给电子能力和分子平面性共同决定激发能的大小。     

Sb掺杂ZnO电子结构和光学性质

为了研究ZnO掺Sb后电子结构和光学性质的变化,采用基于密度泛函理论对纯净ZnO和Sb掺杂ZnO两种结构进行第一性原理的计算。计算结果表明：随着Sb的掺入,体系的晶格常数变大,键长增加,体积变大,系统总能增大。能带中价带和导带数目明显变密,费米能级进入导带,体系逐渐呈金属性,带隙明显展宽。在光学性质方面,主吸收峰的左边出现了新的吸收峰,是由导带上的Zn-4s和Sb-5p轨道杂化电子跃迁所致;同时介电函数虚部波峰发生一定程度的升高,实部静态介电常数也明显增大。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks