Circuit Analysis of Waveguide-Cavity Gunn-Effect Oscillator

A simple equivalent circuit using lumped constant elements is developed for the post-coupled-waveguide-cavity Gunn effect oscillator. The circuit is used to predict with high accuracy the tuning characteristics, loaded Q, and mode-switching frequencies for the oscillator. Characteristic capacitance and negative-resistance values for low-n/sub 0/L-product CW devices are also presented.     

High-power wide-bandwidth TRAPATT circuits

TRAPATT devices show great potential in the area of pulsed amplifiers for phased array radar systems. In order to simultaneously achieve high peak power and large bandwidths, however, careful attention must be focused on the circuit needs of these devices. General circuit conditions consistent with the requirements of high peak power and broad bandwidth are described in this paper. The operation of two especially promising circuits-lumped element and coupled bar-are discussed and the results presented. Finally, it is shown that class-C operation, aside from its advantage of hardware simplification, offers significant bandwidth enhancement.     

A triple-channel micropower operational amplifier

One method of increasing the amount of circuit functions using bipolar devices is to simplify the design of the monolithic chip. This paper describes such a new integrated circuit. The circuit has three independent, micropower, high- gain operational amplifiers on the monolithic chip. Open-loop voltage gain as high as 100 dB has been achieved with a power dissipation of under 300 /spl mu/W. The gain and power dissipation are externally controlled byout board components. Complete performance characteristics along with analysis are presented.     

Design of adaptive dead-time control circuit for resonant half-bridge driver

To decrease the switching loss and the dead-time effect of resonant half-bridge inverter, a novel adaptive dead-time control circuit of resonant half-bridge driver Integrated Circuit (IC) is presented. Without increasing the pin number of IC, this circuit takes a novel strategy to adaptively regulate dead time to a temperate range between high and low thresholds. The high and low thresholds are adaptive to the fall time of output signal in a half-bridge clock cycle. The IC of the designed circuit is suitable for high-voltage applications. The dead-time regulation range of this circuit achieves 0–3.5?µs. The range of temperate dead-time state is 300?ns. The failure signal of this circuit can protect the IC and peripheral power devices by regulating operation in three clock cycles. Both simulation and measurement of the proposed circuit in a half-bridge driver IC with an operating frequency at 50?kHz are presented based on the 0.5?µm 700?V BCD process. The results of simulation and measurement show that the presented circuits’ performance is perfect.     

基于连续逻辑的十值十进制算术运算电路的设计

本文提出了用ＤＹＬ系列器件构成的直接用十进制进行运算的十值电路。ＤＹＬ器件是一种线性元件,它可以工作于０－３Ｖ范围内的任意信号电压,对信号的分辨率极高,为实现高信息密度的十值电路提供了方便条件。本文提出的电路其工作原理是基于一种我们称之为“赋值－选通”的方法,将可能的输出值全部赋予电路,根据输入信息,通过选通电路直接将计算结果输出,这种赋值－选通法对多值电路的设计有普遍意义。     

一种适用于锁式铁氧体器件的驱动电路

分析了锁式铁氧体器件的等效负载特性,在此基础上给出了专用驱动电路的设计,并分析了其原理以及应用结果。从中可以看出,该电路能用于驱动所有锁式铁氧体器件,特别适用于驱动锁式铁氧体移相器。     

An equivalent circuit for charge-transfer devices

A new equivalent circuit for charge-transfer devices (CTD) is proposed. Results of circuit simulations of a string of CTD's, using the transient analysis program ASTAP, are presented. These show, among other details, incomplete transfer caused by high pulse repetition rates and backward transfer caused by excessive input charge.     

Circuit applications of Ovonic switching devices

A review of application circuits for two-terminal amorphous semiconductor switching devices encompassing both the threshold and memory switches is presented, including brief discussions of device electrical and structural characteristics. The most useful electrical properties of these devices are seen to be the threshold turn-on characteristic and the high on-to-off impedance ratio, in the range 10³to 10⁷. Particular emphasis is placed on those applications requiring the versatility of thin-film processing techniques to show feasibility. Also, recent device and circuit developments utilizing a thin-film four-terminal switching structure to obtain input/ output circuit isolation are discussed.     

一种用于电源管理IC的电流采样电路

利用高压集成功率集成器件,设计了一种用于电源管理IC的电流采样电路.此采样电路具有结构简单、精度高、耐高压(＞800 V)、低损耗等特点;同时实现了功率芯片的自供电功能,无需外加芯片供电电源.     

Floating memristor emulator with subthreshold region

Memristor which is recently discovered and known as missing circuit element is an important for memory, nonlinear and neuromorphic circuit designs. Modeling of memristor devices is essential for memristor based circuit design. In this paper, compact memristor which has high memristance value is introduced. The simulations are completed in LTspice program and expected results are obtained applying sinusoidal. Two memristor emulators are connected in serial, in parallel and promising results presented. The simulation results of applying positive pulse train to both of terminals of memristor are showed. The simulations of the proposed emulator showed the expected memristor characteristics.     

Finite-difference time-domain analysis of microwave circuit deviceson high performance vector/parallel computers

In this paper, an efficient finite-difference time-domain algorithm for high performance distributed memory vector/parallel computers is presented. The algorithm is developed in a manner which requires only one interprocessor communication per time step. Illustrated examples based on the analysis of microwave circuit devices are presented demonstrating the efficiency and scalability of the finite-difference time-domain algorithm     

Zero-Voltage Transition Current-Fed Full-Bridge PWM Converter

In this paper, a new zero-voltage transition current-fed full-bridge converter with a simple auxiliary circuit is introduced for high step-up applications. In this converter, for the main switches, zero-voltage switching condition is achieved at wide load range. Furthermore, all semiconductor devices of the employed simple auxiliary circuit are fully soft switched. The proposed converter is analyzed and a prototype is implemented. The experimental results presented confirm the validity of the theoretical analysis. Finally, the proposed auxiliary circuit is applied to other current-fed topologies such as current-fed push-pull and half-bridge converters to provide soft switching.     

A Monolithically Integrated 12V/5V Switch-Capacitor DC-DC Converter

A monolithically integrated 12V/SV switch capacitor DC-DC converter with structure-simplified main circuit and control circuit is presented. Its topological circuit and basic operating principle are discussed in detail. It is shown that elevated operating frequency, increased capacitance and reduced turn-on voltage of the diodes can make the converter's output characteristics improved. Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher. As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial-parallel capacitance is optimized for the maximum output power. The device selection and its fabrication method are presented. A feasible integration process and its corresponding layout are designed. All active devices including switching transistors and diodes are integrated together with all passive cells including capacitors and resistor on a single chip based on BiMOS process,as has been verified to be correct and practical by simulation and chip test.     

基于CPLD的脉冲计数器设计

介绍了用CPLD HDL的EDA技术作为开发手段,实现对16通道脉冲信号计数的脉冲计数器的设计。该方法具有设计周期短,内部电路模块可移植的特点,解决了以往数字电路小规模多器件组合的设计瓶颈,经实际电路测试,该系统性能可靠。     

Low Cost Gate Drive Circuit for MOSFETs and IGBTs

This work presents the design and implementation of a general purpose low cost drive circuit for insulated gate electronic power devices such as MOSFET and IGBT. The proposed drive circuit implementation is explained in detail and the results and waveforms obtained when the drive circuit is used in a chopper circuit with IGBT are presented.     

一种基于BCD工艺的高速低功耗电平位移电路

提出了一种基于0.25 μm BCD工艺、适用于高压降压型DC-DC转换器的新型电平位移电路.该电路使用了耐压60 V的高压DMOS器件(HVNMOS、HVPMOS)、耐压5V的低压CMOS器件(LVNMOS、LVPMOS),以及耐压5V的三极管器件(BJT).分析了降压型DC-DC转换器对电平位移电路的特殊要求;基于对两种常见电平位移电路的分析,提出了一种新型的电平位移电路.电路仿真结果显示,与之前的电路相比,新型电路结构具有响应快速、功耗低、输出电平精确、可靠性高等优点.     

A NOVEL PASSIVE DUAL ENERGY RECOVERY SNUBBER FOR HIGH POWER GTO CONVERTERS

A novel passive dual energy recovery snubber circuit is presented where energy trapped in the snubber inductor and capacitor is recovered into the both DC rail and load, without any active devices or resistors. The maximum over-shoot voltage on the switch is fixed, peak switch current is low, circuit reset is fast and the operational range of load current is wide. This circuit is suitable for use in high frequency, single ended power gate turn-off (GTO) thyrister choppers. Main design equations, some simulations and practical results are included.     

基于半导体器件的仿真系统显示驱动电路的研究

为了提高基于半导体器件的红外动态景像仿真系统的工作效率,根据仿真系统的工作特点设计了一种驱动电路.首先简述红外动态景像仿真系统的技术要求,其次给出基于半导体器件的动态红外仿真系统的工作原理,最后通过分析半导体器件的特点给出系统显示驱动电路的设计及时序图,并指出使用该驱动电路可使系统具有低功耗、高占空比、无闪烁和良好的均匀性等优点.     

一种电机驱动芯片的欠压保护电路设计

基于先进的0.35um BCD工艺,对传统欠压保护电路缺点进行分析,设计实现了一种可应用于电机驱动芯片的欠压保护电路。电路结构简单,不需要额外的带隙基准电路,同时也省去了电压比较器电路。特别地,电路考虑了器件的温度特性,减少温度变化对电路的翻转阈值和迟滞量的影响。通过使用Cadence Spectre工具进行电路仿真,结果表明电路工作正常,当电源电压降低到2.7V时,输出低电平,当电压重新上升到2.83V时,输出恢复到高电平,迟滞量为0.13V,具有迟滞功能。     

A Monolithically Integrated 12V/5V Switch-Capacitor DC-DC Converter

Motivated by the battery-operated applications that demand compact,lightweight andefficient DC-DC converters,many kinds of converter circuits have been published.Amongthem,resonantconverters and the soft-switching convertershave greatl...