超高频无源射频标签的射频接口设计

对射频标签能量供应原理进行了详细的理论分析,设计了一个超高频远距离无源射频标签芯片的射频接口电路,包括电源恢复电路、稳压电路及解调整形电路。解决了超高频无源射频标签远距离能量供应和信号获取的问题。射频接口电路采用UMC 0.18μm混合信号工艺流片验证。测试结果表明,射频接口电路的性能可满足超高频远距离无源射频标签芯片的要求。     

无源超高频RFID标签的模拟前端电路设计

设计完成了一款无源超高频RFID标签的低功耗模拟前端电路。采用了一种新的阈值消除技术,整流电路的能量转换效率可以达到30%以上;使用一种低功耗的稳压电路,为数字电路提供稳定的1 V电源电压的同时功耗为500 nA。此外提出了一种等效灵敏度的测试方法,可以简便地获得标签芯片的激活功率水平。该设计采用TSMC 0.18μm工艺,整个芯片面积为700μm×800μm。测试结果显示:稳压电路可以输出稳定的0.95 V电压,解调模块可以正确调解幅度大于150 mV的天线信号。根据等效灵敏度测试方法,测得本设计的灵敏度约为-14.9 dBm。     

适于UHF RFID标签芯片的高性能电源恢复电路

针对ISO 18000-6C标准,提出一种双电压输出稳压电路,有效降低了整体芯片功耗。基于Cadence Spectre设计仿真平台和TSMC 0.18μm CMOS混合信号工艺进行设计并流片。在-20℃～80℃温度范围内,工艺角从ff到ss变化,仿真得到整流电路的能量转换效率(PCE)为29.88%,稳压电路的温度系数为2.4×10-5/℃,电源噪声抑制比(PSRR)为91.4dB@10Hz和34.5dB@10MHz。同时对芯片进行测试,标签可以工作的最低输入射频功率为-9.5dBm,此时整流效率可达23.1%,稳压高低两路电压输出分别稳定在1.8±0.1V和1.0±0.05V,芯片面积约为0.166mm2。     

带新解调结构的UHF RFID标签低功耗模拟前端设计

基于ISO/IEC 18000-6C协议,对UHF无源电子标签模拟前端中的ASK解调电路、整流器、稳压电路等进行低功耗设计。解调电路中微分电路的加入扩大了解调电路工作范围,在解调电路近距离工作时,可以更有效地解调。整流电路采用了零阈值MOS管代替肖特基二极管,降低芯片成本。整流稳压电路可稳定地为芯片供电,供电电压2 V,建立时间仅为25μs。电路采用SMIC 0.18μm 2P4M CMOS工艺进行流片,芯片面积720μm×390μm。测试得到模拟前端整体工作电流仅2.4μA,标签工作距离大于7 m。     

无源高频RFID标签芯片电源产生电路

无源RFID标签芯片的能量来自读写器发射的射频能量.针对符合ISO/IEC15693标准的无源高频(13.56 MHz)RFID标签芯片,对NMOS栅交叉连接整流电路结构进行了研究与设计,实现的NMOS栅交叉连接整流电路的能量转换效率为34.46 9,6,并设计一种低成本、低功耗的芯片工作电源产生电路,设计工艺采用SMIC 0.35 pm 2P3M CMOS EEPROM工艺.最后,给出了芯片的测试结果.测试结果显示:所设计的电源产生电路能够很好地工作在IS015693标准定义的最小磁场Hmin(150 mA/m)和最大磁场Hmax(5 A/m)之间.     

超高频无源RFID标签的一些关键电路的设计

本文针对超高频无源RFID标签芯片的设计,给出了一些关键电路的设计考虑。文章从UHFRFID标签的基本组成结构入手,先介绍了四种电源恢复电路结构,以及在标准CMOS工艺下制作肖特基二极管来组成倍压电路的解决方案。然后针对电源稳压电路,提出了串联型和并联型两种稳压电路。文章针对ASK包络解调电路,提出了新的泄流源的设计。最后,文章介绍了启动信号产生电路的设计考虑。     

基于PCRAM的射频标签模拟前端关键电路设计

基于相变存储器,对无源超高频电子标签模拟前端四个关键电路进行低功耗设计。整流电路采用9级电荷泵,结合储能电容和过压保护电路,得到了很好的整流效果。上电复位电路在箝位电路的基础上利用简单的缓冲器及异或逻辑,得到性能良好的矩形脉冲复位信号PORB,通过PMOS栅交叉耦合,极大地降低了电路静态电流(<1nA)。在基准电源电路中,设计了双极晶体管和MOS晶体管,兼具功耗低和准确性高的优势。稳压电路采用串联稳压结构,电源抑制比达到28.2dB。仿真结果显示,功耗达到nA级,输出直流电压为3V。     

基于标准CMOS工艺的UHF无源通讯电源电路设计与实现

针对UHF射频无源通信系统中,无源射频接收端的电源电路设计难题,以提高其电源转换电路的能量转换效率和输出电压的稳定性为目标,研究了在标准CMOS工艺下实现肖特基二极管的方法,并从理论上推导了其传输特性,提出了一种新型的限压电路,改进了传统带隙结构。与传统结构相比,新的UHF射频无源通信接收端的电源电路的能量转换效率高,开启速度快,输出电压稳定性更好,能够大幅改善射频无源接收电路的工作性能。最后还给出了芯片实现的版图,以及模拟和测试结果。     

一种NCITS 256协议超高频无源射频识别标签

设计了一种符合NCITS 256协议的无源超高频射频识别标签.标签携带2kbit的标准商用EEPROM.在读卡器发射功率为915MHz 4W EIRP的情况下,芯片的读距离为1.5m,写距离为0.3m.芯片在SMIC 0.18μm EEPROM CMOS工艺下流片实现,面积为1mm×1mm.标签使用Dickson倍压电路从读卡器发射的电磁波中提取能量.Dickson倍压电路使用肖特基管实现,转换效率为25%.     

低功率场射频能量收集电路的仿真与验证

该文设计了一种低功率场射频能量收集电路,可收集中心频率为915 MHz的射频信号,并提供对外直流电源输出。该电路由阻抗匹配电路、倍压整流电路和电能存储电路组成。该文基于ADS仿真软件对电路进行设计,并对其性能进行检验,搭建了硬件电路进行实验验证。实验结果表明,当输入射频功率大于-5 dBm,整流倍压电路的负载电阻为10 kΩ时,输出电压高于0.8 V,空载时输出电压高于4.39 V;当输入功率为10 dBm,整流倍压电路的负载电阻为10 kΩ时,输出电压高达3.6 V,空载时输出电压高达7.7 V。为提高倍压整流电路输出电压,设计了谐振电路对倍压整流电路进行改进优化,并对其进行仿真实验验证。仿真实验结果表明,加入谐振回路的倍压整流电路的输出电压是传统倍压整流电路输出电压的2.5倍。该射频整流电路可用于无线传感器等低功耗电子设备的电能无线供应。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first