In situ 3-hexylthiophene polymerization onto surface of TiO<Subscript>2</Subscript> based hybrid solar cells

A novel configuration of hybrid solar cells fabricated using TiO₂ and in situ polymerization of poly(3-hexylthiophene), or P3HT, on the surface of TiO₂ is reported. Comparison of UV–Vis absorption and current/voltage (I/V) characteristics of devices with or without in situ polymerized P3HT layer were discussed, and the surface morphology of TiO₂/in situ polymerized P3HT film was investigated by AFM in the contact mode. The short-circuit current density and energy conversion efficiencies of device with in situ polymerized P3HT layer were higher by 6 times and 3 times compared to that of device without the in situ polymerized P3HT layer. By adding poly (ethylene dioxythiophene)-poly (styrene sulfonic acid)(PEDOT-PSS) layer under the top contact, device showed a short-circuit current density of 1.27 mA cm⁻², an open-circuit voltage of 0.52 V, a fill factor of 0.24, and a energy conversion efficiency of 0.16% at AM 1.5 solar illumination (100 mW cm⁻²).     

Polymer solar cells with a TiO2:Ag layer

Photovoltaic (PV) polymer solar cells with Ag and titanium dioxide were fabricated to improve the PV performance by increasing the amount of Ag in TiO₂ (by 3, 5, 7, and 10%). Sol–gel method was used to obtain amorphous or crystalline form of titanium dioxide layers. The solar cells with poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester active layer in two various positions of titanium dioxide in device were tested. Higher PV performance was received by introducing TiO₂ with 5% of Ag between ITO and PEDOT:PSS in device and by heating the layer at 130 °C. The viscosity of applied PEDOT:PSS strongly influences the values of power conversion efficiency of the constructed polymer devices with titanium dioxide.     

Electrical and optical properties of poly(2-dodecanoylsulfanyl-<Emphasis Type="Italic">p</Emphasis>-phenylenevnylene) and its application in electroluminescent devices

We describe the optical and electrical characterization of a poly(p-phenylenevinylene) derivative: poly(2-dodecanoylsulfanyl-p-phenylenevinylene) (12COS-PPV). The electrical characterization was carried out on devices with the FTO\PEDOT:PSS\12COS-PPV/Al structure. Positive charge carrier mobility μ _h of ~1.0 × 10⁻⁶ cm² V⁻¹ s⁻¹ and barrier height φ of ~0.1 eV for positive charge carrier injection at the PEDOT:PSS/12COS-PPV interface were obtained using a thermionic injection model. FTO\PEDOT:PSS\12COS-PPV/Ca devices exhibited green-yellow electroluminescence with maximum emission at λ = 540 nm.     

Electrical characteristics and inhomogeneous barrier analysis of aniline green/p-Si heterojunctions

In this study, we identically prepared the aniline green/p-Si organic–inorganic devices (total 27 diodes) formed by direct evaporation of an organic compound solution on to a p-Si semiconductor wafer, and then studied the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of these devices. It was seen that the aniline green organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights (BHs) and ideality factors of all devices were extracted from the electrical characteristics. Mean BH and ideality factor were calculated as 0.582 eV and 2.999, respectively from the I–V characteristics. Additionally, the mean barrier height and mean acceptor doping concentration from C–V measurements were calculated as (0.61 ± 0.10) eV and (5.54 ± 0.68) × 10¹⁴ cm⁻³, respectively. The discrepancy in the BH values obtained from I–V and C–V characteristics has been attributed to different nature of the measurements. This can also be due to the existence of the interfacial native oxide and the organic aniline green thin layer between the semiconductor and contacting top metal.     

Aqueous Metal Oxide Inks for Modifying Electrode Work Function in Polymer Solar Cells

A method to prepare aqueous metal oxide inks for tuning the work function (WF) of electrodes is demonstrated. Thin films prepared from the metal oxide ink based on vanadium oxide (V₂O₅) nanoparticles are found to increase the WF of an indium‐tin‐oxide (ITO) electrode. ITO substrates modified with V₂O₅ films are applied as a hole selective layer (HSL) in polymer solar cells (PSCs) using a poly(3‐hexylthiophene) and [6,6]‐phenyl‐C61 butyric acid methyl ester blend as a photoactive layer. The PSCs prepared with V₂O₅‐modified ITO show better device performance, achieving a power conversion efficiency of 3.6%, demonstrating 15% enhancement compared to conventional ITO/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT‐PSS) based devices. Furthermore, ITO/V₂O₅‐modified devices exhibit better ambient stability with 60% improvement in device lifetime than those using PEDOT:PSS as an HSL. This solution‐processable and highly stable WF‐modifying metal oxide film can be a potential alternative material for engineering interfaces in optoelectronic devices.     

Phase-Modulated Multidimensional Perovskites for High-Sensitivity Self-Powered UV Photodetectors

2D Ruddlesden-Popper perovskites (PVKs) have recently shown overwhelming potential in various optoelectronic devices on account of enhanced stability to their 3D counterparts. So far, regulating the phase distribution and orientation of 2D perovskite thin films remains challenging to achieve efficient charge transport. This work elucidates the balance struck between sufficient gradient sedimentation of perovskite colloids and less formation of small-n phases, which results in the layered alignment of phase compositions and thus in enhanced photoresponse. The solvent engineering strategy, together with the introduction of poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS) and PC₇₁BM layer jointly contribute to outstanding self-powered performance of indium tin oxide/PEDOT:PSS/PVK/PC₇₁BM/Ag device, with a photocurrent of 18.4 µA and an on/off ratio up to 2800. The as-fabricated photodetector exhibits high sensitivity characteristics with the peak responsivity of 0.22 A W⁻¹ and the detectivity up to 1.3 × 10¹² Jones detected at UV-A region, outperforming most reported perovskite-based UV photodetectors and maintaining high stability over a wide spectrum ranging from UV to visible region. This discovery supplies deep insights into the control of ordered phases and crystallinity in quasi-2D perovskite films for high-performance optoelectronic devices.     

Application of ultra-thin CdS film as buffer layer in non-doped blue organic light-emitting diodes

The device inserted 0.5 nm thick cadmium sulfide (CdS) as buffer layer, prepared by vacuum thermal evaporation method, has been studied on the non-doped blue organic light-emitting diode. Compared to the device without ultra-thin CdS film, the maximum luminance of the device with ultra-thin CdS film was 11,370 cd/m² at 11 V, and the maximum current efficiency reached 3.10 cd/A, increased 1.5 times and 1.2 times, respectively. In the optimized devices with the structure of ITO/MoO₃ (10 nm)/TPABBI (35 nm)/Bphen (40 nm)/CdS (0, 0.1, 0.3 and 0.5 nm)/LiF (0.5 nm)/Al (100 nm), the effects of CdS layer on the photoelectric performance of the devices were investigated in detail. When the CdS thickness was 0.3 nm, the maximum luminance was 13,590 cd/m² at 9 V and the turn on voltage was only 3 V. The maximum current efficiency of 3.42 cd/A was obtained. It is indicated that the simple structure of the device with inserted ultra-thin CdS film, cheap and stable inorganic photoelectric material, may be a promising way to fabricate hybrid organic–inorganic LEDs with high performances.     

Application of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate in polymer heterojunction solar cells

In this study, p-type semiconducting polymer of acid, poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), has been employed as a hole-transporting electrode to fabricate organic polymer heterojunction photovoltaic cells. The results showed that the resultant poly(3-hexylthiophene): C₆₀ derivatives [6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PCBM)/PEDOT:PSS can significantly expand the light absorption range which was expected to enhance the sunlight excitation. The influences of annealing conditions and barrier layer on the photoelectric performances were investigated in detail, giving an optimized synthesis conditions: annealed temperature was at 120 °C for 90 min, the thickness of PEDOT:PSS film was approximately 3–4 μm, and the ratio of PCBM and P3HT was 1:2. The blended heterojunction consisting of PCBM and P3HT was used as charge carrier-transferring medium to replace I₃ ^?/I^? redox electrolyte, showing a short-circuit current of 4.30 mA cm^?2, an open-circuit voltage of 0.83 V, and a light-to-electric energy conversion efficiency of 2.37 % under a simulated solar light irradiation of 100 mW cm^?2. In addition, a solid-state polymer heterojunction photovoltaic cells with a short-circuit current of 3.59 mA cm^?2, an open-circuit voltage of 0.80 V, and a light-to-electric energy conversion efficiency of 1.9 % was successfully fabricated by simplifying the process.     

MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field‐Effect Transistors and Inverter Circuits

2D transition metal dichalcogenides are promising channel materials for the next‐generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS₂) few layers and organic crystal – 5,6,11,12‐tetraphenylnaphthacene (rubrene). In this work, ambipolar field‐effect transistors are successfully achieved based on MoS₂ and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm² V^?1 s^?1, respectively. The ambipolar behavior is explained based on the band alignment of MoS₂ and rubrene. Furthermore, being a building block, the MoS₂/rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of ?26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.     

Composite supercapacitor electrodes made of activated carbon/PEDOT:PSS and activated carbon/doped PEDOT

In this paper, we report on the high electrical storage capacity of composite electrodes made from nanoscale activated carbon combined with either poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) or PEDOT doped with multiple dopants such as ammonium persulfate (APS) and dimethyl sulfoxide (DMSO). The composites were fabricated by electropolymerization of the conducting polymers (PEDOT:PSS, doped PEDOT) onto the nanoscale activated carbon backbone, wherein the nanoscale activated carbon was produced by ball-milling followed by chemical and thermal treatments. Activated carbon/PEDOT:PSS yielded capacitance values of 640 F g^?1 and 26 mF cm^?2, while activated carbon/doped PEDOT yielded capacitances of 1183 F g^?1 and 42 mF cm^?2 at 10 mV s^?1. This is more than five times the storage capacity previously reported for activated carbon–PEDOT composites. Further, use of multiple dopants in PEDOT improved the storage performance of the composite electrode well over that of PEDOT:PSS. The composite electrodes were characterized for their electrochemical behaviour, structural and morphological details and electronic conductivity and showed promise as high-performance energy storage systems.     

Improved thermoelectric performance of PEDOT:PSS films prepared by polar-solvent vapor annealing method

To improve thermoelectric performance, polar-solvent vapor annealing (PSVA) method was introduced into the preparation of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films. The solvent vapors included dimethyl sulfoxide, ethylene glycol, N,N-dimethylformamide, N-methyl-2-pyrrolidone, and deionized water (H₂O). The PSVA-treated PEDOT:PSS films exhibited significantly enhanced electrical conductivity and the maximum value was up to 496 S cm^?1. Especially, utilizing the PSVA method, H₂O could also remarkably enhance the electrical conductivity of pristine PEDOT:PSS film from 0.2 to 57 S cm^?1. There was no distinct change for the Seebeck coefficient of PSVA-treated films with the significantly enhanced electrical conductivity, thereby a maximum power factor of 9.47 μW m^?1 K^?2 at room temperature was obtained. The effects of PSVA method on thermoelectric performance of PEDOT:PSS films were also investigated systematically by analyzing the changes in morphology, carrier mobility and carrier concentration. The results confirmed that PSVA-treated PEDOT:PSS films could obtain smoother morphologies and realize the simultaneous increase of carrier mobility and carrier concentration, which results in the improvement of the thermoelectric performance.     

Electroluminescence of zinc selenium (ZnSe) nanocrystals co-doped with poly[2-methoxy-5-(2'-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV)

We have synthesized water soluble zinc selenium (ZnSe) nanocrystals by using mercaotoacetic acid (TGA) as the stabilizer. The synthesized ZnSe nanocrystals were co-doped with poly[2-methoxy-5-(2'-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV) to fabricate an organic/ inorganic hybrid multilayer light-emitting device (LED). The structure of the device was indium-tin-oxide (ITO)/poly (ethylene-dioxythiophene):poly(styrenesul-fonate) (PEDOT:PSS)/MEH-PPV:ZnSe/bathocuproine (BCP)/tris-(8-hydroxylquinoline)-aluminum (Alq3)/Al. We demonstrate that the device has a lower driving voltage and increased current densities and power efficiencies owing to the co-doped ZnSe quantum dots. We obtained good efficiency of the devices when the quality ratio of MEH-PPV and ZnSe quantum dots was 1:1.     

PEDOT:PSS as back contact for CdTe solar cells and the effect of PEDOT:PSS conductivity on device performance

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was studied as the back contact of Cadmium telluride (CdTe) solar cells and was compared with conventional Cu-based back contact. A series of PEDOT:PSS aqueous solutions with different conductivities were spin coated onto the glass/SnO2:F/SnO2/CdS/CdTe structures as back contact, and the PEDOT:PSS conductivity dependence of device performance was studied. It was found that PEDOT:PSS back contact with higher conductivity produces devices with lower series resistance and higher shunt resistance, leading to higher fill factor and higher device efficiencies. As the conductivity of PEDOT:PSS increased from 0.03 to 0.24 S/cm, the efficiency of the solar cell increased from 2.7 to 5.1 %. Methanol cleaning also played an important role in increasing the device performance. The efficiency of our best device with PEDOT:PSS back contact has reached 9.1 %, approaching those with conventional Cu/Au back contact (12.5 %).     

Use of analytical techniques for identification of inorganic polymer gel composition

In the present experimental study, a number of analytical techniques were used to identify the composition of gel and thus elucidate to a certain extent the mechanisms involved during synthesis of inorganic polymers. The raw materials used, low calcium slag from a ferronickel plant and commercial glass, were alkali activated by Na₂SiO₃ and KOH solutions. X-ray diffraction (XRD) is used to identify new formed phases; deconvolution of the amorphous peaks in X-ray powder diffraction patterns enables the quantitative estimation of the amorphous phases present. The morphology and composition of the inorganic polymer gel may be defined by optical reflection microscopy (ORM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) is a useful tool for the identification of specific molecular structures including Si–O–Si and Al–O bonds, which define the degree of polysialation. Thermogravimetric analysis (TG) determines water evaporation rates in inorganic polymer structures by recording the weight loss under controlled heating. Finally, the effect of the presence in the starting mixture of heavy metals such as Pb or Cu and anions such as NO₃ ⁻ or SO₄ ²⁻ on the quality of the gel formed and subsequently on the compressive strength of inorganic polymers are studied and discussed.     

Fast-Response,Highly Air-Stable,and Water-Resistant Organic Photodetectors Based on a Single-Crystal Pt Complex

Organic semiconductors demonstrate several advantages over conventional inorganic materials for novel electronic and optoelectronic applications, including molecularly tunable properties, flexibility, low-cost, and facile device integration. However, before organic semiconductors can be used for the next-generation devices, such as ultrafast photodetectors (PDs), it is necessary to develop new materials that feature both high mobility and ambient stability. Toward this goal, a highly stable PD based on the organic single crystal [PtBr₂(5,5′-bis(CF₃CH₂OCH₂)-2,2′-bpy)] (or “Pt complex (1o)”) is demonstrated as the active semiconductor channel—a material that features a lamellar molecular structure and high-quality, intraligand charge transfer. Benefitting from its unique crystal structure, the Pt-complex (1o) device exhibits a field-effect mobility of ≈0.45 cm² V⁻¹ s⁻¹ without loss of significant performance under ambient conditions even after 40 days without encapsulation, as well as immersion in distilled water for a period of 24 h. Furthermore, the device features a maximum photoresponsivity of 1 × 10³ A W⁻¹, a detectivity of 1.1 × 10¹² cm Hz^1/2 W⁻¹, and a record fast response/recovery time of 80/90 µs, which has never been previously achieved in other organic PDs. These findings strongly support and promote the use of the single-crystal Pt complex (1o) in next-generation organic optoelectronic devices.     

Metal sulfide-polymer nanocomposite thin films prepared by a direct formation route for photovoltaic applications

Blends of conjugated polymers and inorganic semiconductors are an interesting class of materials with various applications in the field of plastic electronics. This work presents a direct approach to obtain composites consisting of a conjugated polymer, poly(3-(ethyl-4-butanoate)thiophene) (P3EBT), and a sulfur-based semiconductor (i.e. CdS, PbS or ZnS) using an in-situ formation route. The metal sulfide semiconductor is formed by reaction of the corresponding metal salt (cadmium acetate, zinc acetate or lead thiocyanate) dispersed within the conjugated polymer matrix with thiourea at temperatures below 200 °C. Nanoscaled networks are formed in the case of the CdS- and ZnS-P3EBT composites as shown by X-ray diffraction and transmission electron microscopy investigations, whereas the PbS-P3EBT blend exhibits inorganic structures on the μm-scale. The materials were used as active layer in bulk-heterojunction type hybrid solar cells. First photovoltaic devices containing an active layer of CdS- or ZnS-P3EBT show photovoltaic action, though efficiencies are low (≤ 0.06%).     

Electrohydrodynamic atomization approach to graphene/zinc oxide film fabrication for application in electronic devices

Graphene-based composites represent a new class of materials with potential for many applications. Metal, semiconductor, or any polymer properties can be tuned by attaching it to graphene. Here, a new route for fabrication of graphene based composites thin films has been explored. Graphene flakes (<4 layers) and a well-known semiconductor zinc oxide (ZnO) (<50 nm particle size) have been dispersed in N-methylpyrrolidone and ethanol, respectively. Thin film of graphene flakes is deposited and decorated with ZnO nanoparticles to fabricate graphene/ZnO composite thin film on silicon substrate by electro hydrodynamic atomization technique. Graphene/ZnO composite thin film has been characterized morphologically, structurally and chemically. To investigate electronic behavior of the composite thin film, it is deployed as cathode in a diode device i.e. indium tin oxide/poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate)/polydioctylfluorene-benzothiadiazole/(graphene/ZnO). The J–V analysis of diode device has shown that at voltage of 1 V, the current density in organic structure is at low value of 4.69 × 10^?3 A/cm² and when voltage applied voltage is further increased; the device current density has increased by the order of 200 that is 1.034 A/cm² at voltage of 12 V.     

Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly(3-hexylthiophene) thin-film transistors

We have investigated self-assembled monolayer (SAM) treatment on SiO₂ gate insulator of poly(3-hexylthiophene) (P3HT) thin-film transistor (TFT), and demonstrated a correlation between mobility and surface free energy of the insulator. The device with lower surface free energy shows higher mobility. The docosyltrichlorosilane (DCTS)-treated device exhibits the best performance among the various SAM-treated devices examined. Field-effect mobility, on/off ratio and threshold voltage of the DCTS-treated P3HT TFT were 0.015 cm²/Vs, >10⁵ and −14 V, respectively.     

Dual‐Phase CsPbBr3–CsPb2Br5 Perovskite Thin Films via Vapor Deposition for High‐Performance Rigid and Flexible Photodetectors

Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr₂, dual‐phase all‐inorganic perovskite composite CsPbBr₃–CsPb₂Br₅ thin films are prepared as light‐harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W^?1 and 10¹¹ Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb₂Br₅ provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual‐phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications.     

Comparison of performance parameters of poly(3,4 ethylenedioxythiophene) (PEDOT) based electrochromic device on glass with and without counter electrode

Conjugated polymers are promising materials for electrochromic device technology. Aqueous dispersions of poly(3,4-ethylenedioxythiophene)-(PEDOT) were spin coated onto transparent conducting oxide (TCO) coated glass substrates. A seven-layer electrochromic device was fabricated with the following configuration: glass/transparent conducting oxide (TCO)/PEDOT (main electrochromic layer)/gel electrolyte/prussian blue (counter electrode)/TCO/glass. The device fabricated with counter electrode (Prussian blue) showed a contrast of 18% and without counter electrode showed visible contrast of 5% at 632 nm at a voltage of 1.9 V. The comparison of the device is done in terms of the colouration efficiency of the devices with and without counter electrode.