共查询到19条相似文献,搜索用时 78 毫秒
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日本三洋电机公司功能材料研究所的大西及桑野,最近研制出转换效率为9.6%的10cm正方形集成结构非晶硅太阳电池。这是目前世界上大面积非晶硅太阳电池达到的最高转换效率(他们曾在1cm正方形非晶硅太阳电池上达到11.7%的效率)。该电池结构示于图1,电池特性列于表1。为了提高电池效率,他们首先分析了电池能量的 相似文献
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Cu(In,Al)Se2(CIAS)化合物薄膜太阳电池属于Ⅰ-Ⅲ-Ⅵ2族化合物薄膜太阳电池,由同族的Al来替代CuInSe2(CIS)中的In,及Cu(In,Ga)Se2(CIGS)中的Ga和In。具有黄铜矿结构的Ⅰ-Ⅲ-Ⅵ2族化合物半导体材料可作为吸收层用于光伏电池。用渗入CIS中得到具有黄铜矿结构的CIGS,并且可根据Ga/(In+Ga)调节禁带宽度提高转化效率,但Ga的掺入调节禁带宽有限。以Al替代Ga,不仅可大幅降低成本,同时由于形成CuAlSe2相的能隙为2.7eV,因此调节Al/(In+Al)的比例可更宽泛地调节Cu(In,Al)Se2(CIAS)能禁带宽度。目前CIAS制备工艺以真空镀膜方法为主,包括真空蒸镀、磁控溅射、脉冲激光等。在非真空方法中,研究者们尝试了电沉积的方法成功制得单相的CIAS吸收层薄膜,而用如丝网印刷等低成本工艺CIAS薄膜尝试还少见报导。本文详细介绍了CIAS制备方法及工艺,并提出CIAS研究的一些建议。 相似文献
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CIGS films were prepared on Mo-coated glass by sputtering and selenization processes. The metallic precursors were selenized under higher pressure in selenium vapor instead of H2Se. In order to improve the performance of CIGS thin film solar cells, the morphologies of CIGS thin films were studied carefully by various temperature profiles. The relationship between temperature decrease rate and fill factor (FF) of solar cells was investigated thoroughly. On the other hand the value of open circuit voltage (Voc) was improved by increasing the gallium content near the surface of CIGS thin film. A glass/Mo/CIGS/CdS/ZnO cell was fabricated and the conversion efficiency of 9.4% was obtained without antireflective film. 相似文献
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研究了光、热和湿气对CdS/Cu2S电池效率及电池成结、结电容、二极管特性和光谱响应特性的影响。结果表明,对未成结电池光加速成结作用,对成结电池光引起电池性能下降,这种衰降是不可逆过程。 相似文献
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Chanwit Chityuttakan Panita Chinvetkitvanich Kajornyod Yoodee Somphong Chatraphorn 《Solar Energy Materials & Solar Cells》2006,90(18-19):3124-3129
Thin films of Cu(In,Ga)Se2 were grown by co-evaporation process in a conventional vacuum coating system at the base pressure of 10−5 mbar. The controllable of the two-stage growth process was developed. During the growth process, substrate temperature, graphite heater temperature, heating output power and temperature of the CIGS surface were monitored simultaneously. In this setup, we use the change in the thermal behavior of the substrate due to the variations in emissivity of CIGS film during the transition of Cu-rich to Cu-poor in the second stage corresponding to the change of power fed into the substrate heater as the control signal. By observing the variation of control signals, the desired final composition of the film can be obtained. Using our device fabrication, Al/ZnO(Al)/CdS/CIGS/Mo/SLG solar cells with efficiency over 14% (without AR) were achieved. 相似文献
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采用共蒸发法制备了ZnTe:Cu和Cd1-xZnxTe多晶薄膜,研究了薄膜的结构和性能。获得了Cd1-xZnxTe多晶薄膜的光能隙与锌含量的关系,ZnTe:Cu多晶薄膜光能隙随着掺Cu浓度的增加,光能隙减小。分别用ZnTe/ZnTe:Cu和Cd1-xZnxTe/ZnTe:Cu复合层作为背接触层,既能修饰异质结界面,改善电池的能带结构,又能防止cu原子向电池内部扩散。获得了面积0.5cm^2,转换效率为13.38%的CdTe多晶薄膜太阳电池。 相似文献
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对在重掺杂抛光单晶硅衬底上用RTCVD法形成硅薄膜太阳电池进行了研究。衬底为〈100〉晶向p+ + 型重掺硅片,电阻率为5×10- 3Ωcm 。主要工艺过程为:在衬底上生长一层硅薄膜同时掺硼,膜厚38μm ,扩磷制备p-n 结,背面蒸Al及Ti/Pd/Ag 制背电极,正表面在扩散后生长一层SiO2 ,前面用光刻剥离法制备Ti/Pd/Ag 电极,制成的1cm 2 太阳电池,开路电压VOC= 612.8m V,短路电流ISC= 29.3m A,填充因子FF= 0.7579,效率η= 13.61。对一些影响电池特性的因素进行了研究,发现硅薄膜的掺杂浓度、发射层的掺杂浓度以及减反射层都对太阳电池的特性有较大影响。 相似文献
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Jean Rousset 《Solar Energy Materials & Solar Cells》2011,95(6):1544-1549
The possibility to reach up to 14.7% efficiency with Cu(In,Ga)Se2 (CIGS) solar cell, using a cadmium free buffer layer (indium sulphide:In2S3) and an electrodeposited front contact (chloride doped ZnO:ZnO:Cl) is demonstrated in this article. This is the first time that costly gas phase deposition processes for ZnO, by high vacuum sputtering, can be replaced by an efficient low cost atmospheric technology, representing an important breakthrough in further cost reduction for photovoltaic application. In addition, the compatibility with cadmium free buffer layers brings this new approach at the cutting edge of strategic evolution of the CIGS technology. In this study the influences of the In2S3 buffer layer thickness, the presence of an intrinsic ZnO layer and a soft annealing treatment are studied. It is shown that the growth behavior of the electrodeposited ZnO:Cl is controlled by nucleation phenomena on different surfaces, with a unique morphology on indium sulphide. Finally the best performances have been achieved with a cell annealed at 150 °C under atmospheric conditions containing a very thin In2S3 layer (15 nm) but without intrinsic ZnO (CIGS/In2S3/ZnO:Cl). 相似文献
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S. Merdes R. MainzJ. Klaer A. MeederH. Rodriguez-Alvarez H.W. SchockM.Ch. Lux-Steiner R. Klenk 《Solar Energy Materials & Solar Cells》2011,95(3):864-869
A Cu(In,Ga)S2-based solar cell with a confirmed efficiency of 12.6% together with an open circuit voltage of 879 mV, prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor, is reported. The performance of the new cell is superior to those obtained previously with multi-source evaporated absorbers. We show that by carefully adjusting the temperature profile, good absorber properties could be transferred from a long process to a rapid thermal process. The improved efficiency is due to an appropriate degree of gallium diffusion toward the surface, which could be achieved despite the short sulfurization time. Absorber and solar cell characteristics are presented. 相似文献
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在含有ZnSO4、SC(NH2)2、NH4OH的水溶液中采用CBD法沉积ZnS薄膜,研究了沉积时间、水浴温度、搅拌等工艺条件对沉积薄膜的影响。薄膜的厚度与搅拌的强度有很大关系,表明扩散传质是薄膜生长的控制步骤。XRF和XRD测试表明沉积的薄膜中含有ZnS和Zn(OH)2,SEM测试表明薄膜颗粒大小相近,但不致密。随着沉积时间的增加,薄膜厚度增加,透过率减小。当前采用CBD-ZnS薄膜制备的无镉CIGS太阳电池转换效率达到8.54%。 相似文献