Mg-2Zn-xCu合金的显微组织和热物性能（英文）

通过显微组织和热物性能表征、热处理及第一性原理计算,研究Mg-2Zn-xCu (x=0.5, 1.0, 1.5,摩尔分数,%)合金的显微组织和热物性能。结果表明,添加Cu元素对合金显微组织和热物性能有影响。随着Cu含量增加,铸态合金中MgCuZn相含量增加,铸态合金电导率和热导率增大。固溶处理后,合金中共晶组织部分溶解,Zn原子回溶进入基体,导致合金的电导率和热导率均降低。时效处理前期,溶质原子从基体中沉淀析出,合金电导率增大,时效24 h后,Mg-2Zn-1.5Cu合金的热导率最高达到147.1 W/(m·K)。合金中形成的热稳定MgCuZn相对合金的电导率和热导率起促进作用。Zn元素在基体中含量越低,晶格畸变程度越低,导热性能则越好。另外,第一性原理计算结果也表明MgCuZn三元相具有很好的导电和导热性能。     

Interfacial Microstructure and Its Influence on Resistivity of Thin Layers Copper Cladding Steel Wires

The interfacial microstructure and resistivity of cold-drawn and annealed thin layers copper cladding steel (CCS) wires have been systematically investigated by the methods of scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and resistivity testing. The results showed that the Cu and Fe atoms near interface diffused into each other matrixes. The Fe atoms diffused into Cu matrixes and formed a solid solution. The mechanism of solid solution is of substitution type. When the quantity of Fe atoms exceeds the maximum solubility, the supersaturated solid solution would form Fe clusters and decompose into base Cu and α-Fe precipitated phases under certain conditions. A few of α-Fe precipitates was observed in the copper near Cu/Fe interfaces of cold-drawn CCS wires, with 1–5 nm in size. A number of α-Fe precipitates of 1–20 nm in size can be detected in copper near Cu/Fe interfaces of CCS wires annealed at 850°C. When annealing temperature was less than 750°C, the resistivity of CCS wires annealed was lower than that of cold-drawn CCS wires. However, when annealing temperature was above 750°C, the resistivity of CCS wires was greater than that of cold-drawn CCS wires and increased with rising the annealing temperature. The relationship between nanoscale α-Fe precipitation and resistivity of CCS wires has been well discussed.     

Cu掺杂类金刚石薄膜应力降低机制的第一性原理研究

目的比较不同浓度Cu掺杂类金刚石薄膜的性能变化规律,并分析Cu掺杂对薄膜性能变化的作用机制。方法建立密度为2.03 g/cm^3、2.87 g/cm^3的不同Cu原子数分数(1.56%~7.81%)掺杂类金刚石薄膜(Cu-DLC)初始模型,采用NVT和NOSE温度调节法模拟熔融退火及淬火过程,以及基于广义梯度近似(GGA)的共轭梯度法优化几何模型,运用CASTEP计算Cu-DLC模型的径向分布函数(RDF)、sp3-C含量、体积模量、键长和键角分布等,并探讨Cu掺杂对DLC膜应力变化的影响机制。结果随Cu含量的增加,薄膜中sp3-C杂化比例增加。与DLC相比,Cu掺杂DLC的RDF中第一峰和第二峰的位置发生显著偏移,薄膜中残余应力随着Cu含量的增加先减小后增大,Cu含量为1.56%时,残余应力最小(7.2 GPa)。Cu含量增加导致总键角分布的峰值降低,峰宽向小键角移动,总键长分布峰值降低,在长键长方向产生小而宽的峰。结论C Cu的弱键特性及扭曲的键角、键长得到松弛,对薄膜残余压应力的降低有显著作用,在较高Cu浓度条件下,扭曲的C C键比例增加,形成了更多扭曲的C Cu和Cu Cu结构是导致残余应力增加的关键因素。     

Effect of substrate bias voltage on the texture and microstructure of Cu thin films deposited by ion beam deposition

Cu thin films deposited by non-mass separated ion beam deposition under various substrate bias voltages were investigated. The film textures and microstructure were analyzed by X-ray diffraction and field emission scanning electron microscopy, and the resistivity of the film was measured with the Van der Pauw method. It was found that the optimum negative substrate bias voltage for Cu films was −50 V. The Cu films deposited without substrate bias voltage showed a columnar grain structure with small grains and random orientation. However, when a substrate bias voltage of −50 V was applied, the Cu films had a non-columnar structure with a strong (111) texture and large grains. The electrical resistivity of the Cu films decreased remarkably with increasing negative substrate bias voltage, and reaching a minimum value of 1.8±0.13 μΩ cm at the substrate bias voltage of −50V.     

金属含量对Co-TiO2纳米颗粒复合薄膜微观结构及其性能的影响

目的使Co-TiO_2纳米颗粒复合薄膜同时具备高的磁化强度及电阻率,从而实现更好的高频软磁特性。方法通过磁控共溅射的方法,在不同金属靶功率下制备了Co-TiO_2纳米颗粒复合薄膜,并探究金属含量对薄膜的微观结构、表面形貌、电学和静态磁学性能的影响。结果薄膜中的金属颗粒被非晶态的TiO_2分散。金属含量的增加可以显著提高纳米颗粒薄膜中金属颗粒的结晶性,降低薄膜电阻率,并且通过改变金属含量,可使薄膜逐渐从超顺磁态向铁磁态转变,达到精确调控纳米颗粒复合薄膜的磁学和电学性能的目的。结论在金属含量达到54%时,实现了高电阻率和高饱和磁化强度共存,有望得到具有高频软磁特性的纳米颗粒复合薄膜。     

Deposition and properties of Al-containing diamond-like carbon films by a hybrid ion beam sources

Metal incorporation is one of the most effective methods for relaxing internal stress in diamond-like carbon (DLC) films. It was reported that the chemical state of the incorporated metal atoms has a significant influence on the film internal stress. The doped atoms embedding in the DLC matrix without bonding with C atoms can reduce the structure disorder of the DLC films through bond angle distortion and thus relax the internal stress of the films. In present paper, Al atoms, which are inert to carbon, were incorporated into the DLC films deposited by a hybrid ion beams system comprising an anode-layer ion source and a magnetron sputtering unit. The film composition, microstructure and atomic bond structure were characterized using X-ray photoelectron spectroscopy, transmission electron microscopy and Raman spectroscopy. The internal stress, mechanical properties and tribogoical behavior were studied as a function of Al concentration using a stress-tester, nanoindentation and ball-on-disc tribo-tester, respectively. The results indicated that the incorporated Al atoms were dissolved in the DLC matrix without bonding with C atoms and the films exhibited the feature of amorphous carbon. The structure disorder of the films tended to decrease with Al atoms incorporation. This resulted in the distinct reduction of the internal stress in the films. All Al-DLC films exhibited a lower friction coefficient compared with pure DLC film. The formation of the transfer layer and the graphitization induced by friction were expected to contribute to the excellent friction performance.     

A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering

A comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented. The crystallographic texture and structural evolution of these films are investigated as a function of thickness within a range of 30 to 230 nm using XRD and SEM. AVA deposited Cu films possess smaller grains with a lesser degree of crystallinity than dc-sputtered ones. Electrical resistivity, temperature coefficient of resistance and thermoelectric power of both as-deposited and annealed Cu films of AVA and dc-magnetron sputtering is measured and their dependence on the film thickness is investigated. AVA deposited Cu films having thickness less than 100 nm show much higher resistivity than dc-sputtered ones. AVA deposited Cu films possess lower temperature coefficient of resistance values than dc-sputtered ones. The observed thickness dependence of thermoelectric power is larger in AVA deposited Cu films than in dc-sputtered ones. These electrical measurements reveal that AVA deposited Cu films possess more vacancies than dc-sputtered ones.     

混杂增强(CNTs+TiB2)/Cu复合材料制备与性能

本文以碳纳米管（CNTs）和TiB2颗粒作为增强相,首先利用球磨、表面吸附和热压烧结相结合技术制备具有层叠结构的CNTs/Cu复合材料,改善了CNTs在铜基复合材料中易团聚问题。CNTs/Cu复合材料的致密度和导电率随CNTs含量增加而降低,抗拉强度和伸长率随CNTs含量增加先升高后降低,当含量为0.1 wt.%时综合性能最优,致密度、导电率和抗拉强度分别为97.57%、91.2 %IACS和252 MPa。而球磨后热压烧结的1 wt.% TiB2/Cu复合材料致密度、导电率和抗拉强度分别为97.61%、58.3 %IACS和436 MPa。在此基础上,将TiB2颗粒原位引入到具有层叠结构的CNTs/Cu复合材料,制备获得混杂增强(CNTs+TiB2)/Cu复合材料。相比单一CNTs（或TiB2）增强铜基复合材料,(CNTs+TiB2)/Cu复合材料的强度提升显著。其中,(0.1 wt.% CNTs+1 wt.% TiB2)/Cu复合材料的导电率和抗拉强度分别为56.4 %IACS和531 MPa,相比1 wt.% TiB2/Cu,其导电率仅降低3.3%,而抗拉强度则升高21.8%。这主要归因于片层间CNTs可起承担和传递载荷作用,同时片层间弥散分布的TiB2颗粒可以钉扎位错,两种强化机制共同作用使(CNTs+TiB2)/Cu复合材料的抗拉强度显著提升。     

氧化铱薄膜的制备及其导电机理研究

采用脉冲激光沉积技术在Si(100)衬底上制备了高导电的IrO2薄膜,重点研究了退火前后其电学性能和微观结构的变化规律。采用X射线衍射(XRD)、原子力显微镜(AFM)、光电子能谱(XPS)和四探针法对退火前后IrO2薄膜的结构和电性能进行了表征,并利用霍尔效应研究了IrO2薄膜的导电机理。结果表明:IrO2薄膜在空气中退火后,导电性能得到提高,其中在750℃退火的电阻率达到最小值37μΩ.cm。在25～500℃范围内,IrO2薄膜的高温电阻率随着温度的升高呈线性关系逐渐增大,呈现出类似金属的导电特征。在250～400℃沉积的IrO2薄膜载流子的类型为p型;沉积温度较高(500℃)或在更高温度退火处理后,IrO2薄膜载流子的类型为n型,其导电机理以电子导电为主。     

Ti-doped copper nitride films deposited by cylindrical magnetron sputtering

Pure and Ti-doped copper nitride films were prepared by cylindrical magnetron sputtering on glass substrates at room temperature. The preferred orientation for copper nitride films changes from [1 1 1] for undoped film to [1 0 0] for Ti-doped films. The variation of surface morphology correlates to that of preferred orientation resulting from the variation of Ti-doped content. The electrical resistivity and optical band gap increases as the Ti-doped content increases.     

Si、Cu和热处理工艺对Al-Si合金电导率的影响

通过电导率测量、金相观察、扫描电镜分析和X射线衍射分析,研究了Si含量、Cu含量和热处理工艺对Al-Si系铸造合金晶格常数和电性能的影响规律。结果表明:Si和Cu元素的添加会减小合金的电导率;当Si含量超过固溶极限后,Si含量的变化对晶格畸变程度影响不大,合金的电导率受Si相的体积百分数控制;而Cu在固溶极限内时,随其含量的增加,晶格畸变程度增大,合金的电导率可根据铝基体晶格常数的偏离量来评估;经过450℃,5 h+250,2 h热处理工艺,晶格畸变程度明显降低,合金的电导率有明显提高,增幅最高可达32%。     

MLCROSTRUCTURE AND PROPERTIES OF C-Cu NANOSTRUCTURE THIN FILM

1. IntroductionTlle filnls of dial11ol1d-Iike carboll (DLC) llave a smooth, chemically inert sllrface withhigh hardness, a sluall fri.ti.,1 coefficiellt, and a low threshold fOr electron emissioll. Theyllaxv lIlall}' applicatioIls ill differellt fields. T…     

单源低能离子束辅助沉积类金刚石薄膜结构及性能研究

用单源低能氩离子束辅助沉积（ＩＢＡＤ）法制备了非晶碳薄膜．氩离子能量为４００－１５００ｅＶ．膜面光滑致密，与衬底的结合力较高。用Ｒａｍａｎ，ＦＴＩＲ，ＨＲＴＥＭ，ＴＥＤ，ＳＥＭ，ＥＲＤ及ＲＢＳ研究了薄膜的形貌、结构和组分，测量了膜的电阻率、显微硬度及摩擦系数．薄膜为无定形的类金刚石（ＤＬＣ）．其中含氢约为２０５ａｔ．－％，碳原子与氢原子几乎没有形成Ｃ－Ｈ键．随着离子束能量及束流的增加，显微硬度、摩擦系数增加，电阻率减小．硬度增加是由于薄膜致密度的增加，而电阻率降低是由于膜中金刚石键（ｓｐ~３键）含量减少的缘故．     

MICROSTRUCTURE AND PROPERTIES OF C-Cu NANOSTRUCTURE THIN FILM

Nanostructured C-Cu thin films were deposited by reactive sputtering method and co-sputtering method. The relationships between microstructures, properties, and depo-sition parameters were studied and the results obtained from TEM, AFM, and XPS.indicate that the thin films are nanostructural, and have good in-depth uniformity. Theselected area electron diffraction (SAED) found that the nanosize Cu particles havethe fcc structure and the others are amorphous carbon or nanocrystallized graphiticcarbon. The peak positions of the Cu and C in XPS indicate them to be at the ele-mental state. In the IR transmission spectrum, diamond two-phonon absorption andgraphite Raman peaks were observed, which suggests microcrystal diamond particlesand graphite components exist in the C-Cu film. The higher electrical resistivity wasobtained.     

电子束物理气相沉积Cu-Mo复合材料微结构与性能

本文采用电子束物理气相沉积（EB-PVD）制备了纳米钼颗粒弥散强化铜基复合材料（Mo体积含量为 2.5%-10.8%）,对其材料微观结构、钼含量和硬度、电阻率关系进行了研究。结果表明：Cu-Mo复合材料基体由柱状晶铜组成,Mo颗粒平均直径为2.4-8.1nm;随着钼含量增加,铜基体柱状晶宽度逐渐减小,第二相Mo颗粒平均直径逐渐增加,硬度、电阻率逐渐增加;EB-PVD制备的Cu-Mo复合材料主要强化机制为Orowan机制。     

Thermal performance of sputtered Cu films containing insoluble Zr and Cr for advanced barrierless Cu metallization

Pure Cu films and Cu alloy films containing insoluble substances(Zr and Cr)were deposited on Si(100)substrates,in the presence of interfacial native suboxide(SiOx),by magnetron sputtering.Samples were vacuum annealed between 300℃and 500 ℃to investigate effects of Zr and Cr additions on the thermal performance of Cu films.After annealing,copper silicides were found in the Cu(Zr)films,while no detectable silicides were observed in Cu and Cu(Cr)films.Upon annealing,Zr accelerated the diffusion and reaction between the film and the substrate,and lowered the thermal stability of Cu(Zr)alloy films on Si substrates,which was ascribed to the‘purifying effect’of Zr on the Si substrates.Whereas,Cr prohibited the agglomeration of Cu films at 500℃and decreased the surface roughness.As a result,the diffusion of Cu in Si substrates for Cu(Cr)films was effectively inhibited.In contrast to the high resistivity of Cu(Zr)films,the final resistivity of about 2.76μΩ·cm was achieved for the Cu(Cr)film.These results indicate that Cu(Cr)films have higher thermal stability than Cu(Zr)films on Si substrates and are preferable in the advanced barrierless Cu metallization.     

Preparation and characterization of ZnO/Cu/ZnO transparent conductive films

ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The morphology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), UV/Vis spectrophotometer, and Hall effect measurement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conductive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance: resistivity of 2.3×10-4 Ω·cm, carrier concentration of 6.44×1016cm-2 , mobility of 4.51cm2·(V·s)-1 , and acceptable average transmittance of 80 % in the visible range. The transmittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.     

Effect of Low-Temperature Microwave Processing and Copper Content on the Properties of Ag-Cu Thin Film Binary Alloys

The effects of Cu content on the electrical and structural properties of Ag-Cu thin films were studied before and after microwave processing. Copper was chosen as the alloying element because of its low solubility in Ag, which enables it to segregate at the surface. After microwave annealing, enhanced electrical and structural properties were observed. The results from Rutherford backscattering spectrometry, x-ray diffraction, and four-point probe measurements suggested that the resistivity is controlled by the residual copper concentration and increased grain growth during the low-temperature microwave anneals. For each particular copper concentration, microwave annealing resulted in highest Hall mobility and lowest resistivity. These findings opened the possibility for novel materials structures based on low-temperature microwave processing schemes.     

非平衡磁控溅射离子镀Cu-Nb纳米晶薄膜的微观结构及性能

研究了Nb含量对纳米晶Cu-Nb薄膜微观结构和性能的影响。使用非平衡磁控溅射离子镀技术,在具有(100)晶面的单晶Si基体和玻璃基体上制备不同Nb含量的Cu-Nb纳米晶薄膜,研究Nb含量对纳米晶Cu-Nb薄膜微观结构和性能的影响。将样品置于卧式真空退火炉中进行400 ℃退火,用配备了能量色散X射线光谱仪的场发射扫描电镜、原子力显微镜、X射线衍射仪、纳米压痕仪和四探针电阻率测试仪等分析了退火前后薄膜的微观结构、力学性能与电学性能。结果表明,沉积态Cu-Nb薄膜表面由致密的纳米晶组成,表面粗糙度最高仅为8.54 nm,且无明显的孔洞和裂纹等缺陷。随着Nb含量的增加,薄膜的平均晶粒尺寸下降5 nm,薄膜的硬度也因细晶强化而有所增加,在靶电流为1.3 A时达到最大值4.9 GPa。退火态样品在硬度、弹性模量、平均晶粒尺寸和表面粗糙度方面与沉积态薄膜相比有较小的变化,Cu-Nb薄膜表现出优良的热稳定性。Nb的加入可有效细化晶粒,达到细晶强化的效果,同时Cu-Nb不互溶的特性使得纳米晶薄膜在高温下也可保持较好的热稳定性。Nb靶溅射电流为0.5 A 时薄膜综合性能最佳,此时沉积态Cu-Nb薄膜的电阻率最低,为3.798×10^-7 Ω/m,硬度和弹性模量高达4.6 GPa和139.5 GPa,薄膜厚度为1050 nm,粗糙度R_a为4.70 nm。     

15-5PH不锈钢表面类石墨碳基多层膜结构设计及摩擦学行为

针对马氏体沉淀硬化不锈钢15-5PH(0Cr15Ni5Cu4Nb)在海水环境中易腐蚀磨损的问题,采用直流磁控溅射的方法在15-5PH钢样片上制备调制周期分别为940、375和234nm的掺杂Cr的类石墨碳基多层膜（分别标记为Cr/GLC-S1、Cr/GLC-S2和Cr/GLC-S3）,采用扫描电子显微镜（SEM）、拉曼光谱仪（Raman）、MFT-5000多功能摩擦磨损试验机等仪器设备系统考察三种类石墨碳基多层薄膜的结构及摩擦学性能。研究结果表明：不同调制周期的类石墨多层膜表面均呈现“菜花状”形貌,随着调制周期的减小,“菜花状”颗粒逐渐减小,膜层变得致密;sp2键含量逐渐增大,石墨化程度加剧,机械性能更加优异。在干摩擦条件下,调制周期适中的Cr/GLC-S2薄膜具有良好的减摩耐磨性能,磨损形式以磨粒磨损为主,而调制周期较大的Cr/GLC-S1和调制周期较小的Cr/GLC-S3薄膜,在高载荷下均发生不同程度的脆性剥落,导致其摩擦学性能劣化。在人工海水环境中,Cr/GLC-S1和Cr/GLC-S2薄膜在中低载荷下的摩擦学性能较好,磨损形式仍以磨粒磨损为主,在高载荷下三种多层膜均发生不同程度...