Optical and photoelectric properties of Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>As<Subscript>2</Subscript> single crystals

The optical absorption, photoconductivity, and short-circuit photocurrent spectra of structurally perfect Cd_{1 - x} Zn_xAs₂ (x = 0.03, 0.05, 0.06) single crystals are studied for the first time near the intrinsic edge in the range 80–300 K. The results demonstrate that the intrinsic edge in the solid solutions is due to indirect transitions involving the formation of excitons for both the E c and E c polarizations. The indirect gaps _g ⁱ of the solid solutions are determined. In the range 80–300 K, the data for x = 0–0.06 and both polarizations are well fitted by _g ⁱ (x) = _g ⁱ (0) + 0.0866x + 2.35x ². The introduction of 6 mol % ZnAs₂ into CdAs₂ increases its _g ⁱ by 14 meV.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 268–272.Original Russian Text Copyright © 2005 by Morozova, Marenkin, Mikhailov, Koshelev.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Effective permittivity of layered dielectric sphere composites

A straightforward model is presented for analysing the effective permittivities of layered dielectric sphere composites. Using the present model, the effective permittivity, _eff, of layered dielectric sphere composites can be deduced using classical two-phase dielectric mixture formulae in two steps: first, the effective permittivity, _incl, of the inclusions is calculated by taking the layered dielectric sphere inclusions as sub-composites; and second, the effective permittivity, eff, of the composites is found by substituting the layered dielectric sphere inclusions with homogeneous spheres whose permittivity is equal to _incl. The present model is applicable to multi-layer sphere composites. Experiments on resin-based hollow bead composites show that the present model accurately predicts the effective permittivity of layered dielectric sphere composites.     

Optical investigation of SnS2 single crystals

The optical properties of the layered compound SnS₂ have been studied. Reflectivity spectra were measured at room temperature, in the energy region 1.8–5.6 eV. Optical transmission measurements were carried out in the temperature range 13–300 K, in order to evaluate the energy gaps and their temperature dependences. The spectra of the optical constantsn, , ₁ and ₂ versus photon energyh have also been presented.     

Dynamic scaling and ultrasonic attenuation in 4He near the superfluid transition point

Attenuation of first sound has been measured in ⁴He under saturated vapor pressure near the lambda temperature T at frequencies /2 ranging from 10.2 to 271 MHz. The frequency dependence of the critical part of the attenuation is determined and the dynamic scaling hypothesis is examined. Above the lambda point, it is found that the critical attenuation is described by a scaling function (, ) = ^1+y F(), where = ₀^–x and = T/T – 1, with the results x = 1.02±0.05 and y = 0.33±0.03. The characteristic frequency of the order-parameter fluctuation with the wave number k equal to the inverse correlation length is then proportional to ^x , which is in an excellent agreement with the prediction of dynamic scaling. Below the lambda point, a characteristic relaxation time or times shorter than previously expected at lower frequencies appears to exist in the present frequency range.Based on a Ph.D dissertation submitted by K. Tozaki to the University of Tokyo (1977).     

Study of dielectric and electrical properties of mortar in the early hydration period at microwave frequencies

The dielectric constant, , and electrical conductivity, , of mortars with various sand-cement ratios,s/c, were measured for the first 30 h hydration using microwave techniques in the frequency range 8.2–12.4 GHz. The and of the mortars were found to increase linearly with increasing water-solid ratiow/(s + c), but decrease with increasings/c. It was found that as long as thes/c values were the same, the rate of changes in and of the mortars were the same. It appears that thes/c is the key factor controlling the rates of changes in dielectric and electrical parameters of cement hydration in mortar. The relationship between compressive strength and dielectric and electrical properties of mortars was also discussed.     

High-field electrical conduction in m Hgl2

The electrical and dielectric properties of illuminated Hgl₂ were studied at room temperature under various a.c.-signal amplitudes in the frequency range 1 Hz to 10 kHz. Below 40 H, We real part of the dielectric constant, ,was found to vag slightly with voltege for low electric fields (E < 10³V cm^–1, above which it showed a steady increase with the applied voltage. At higher frequencies, no voltage dependence of (or the geometrical capacitance) of the crystal was observed. On the other hand, the imaginary part of the dielectric constant, or the a.c. conductivity, (=_o) was found to decrease considerably with the applied voltage forE < 10³V cm^–1 at all frequencies. For higher fields (E > 10³V cm^–1), exp [C(E/)^1/2], whereC is e constant. Above 40 Hz, this variation was in good agreement with the behaviour of the bulk, resistance of the crystal. Such behaviour is discussed in the view of Richardnon-Schottky and Poole-Frenkel conduction mechanisms, which seem to be operative in Hgl₂ at room temperature.     

Longitudinal dielectric function and collective surface oscillations in superconductors

The electrodynamic approach to the problem of collective oscillations in superconductors is considered. The kinetic equation for quasiparticles is used to find the longitudinal dielectric function ₁ (, k) of a pure superconductor at ( is the collision frequency). With the help of the evaluated ₁ (, k) the existence of collective oscillations localized near the boundary of the superconductor is investigated.     

Theory of dielectric polarization of a substance. Calculation of dielectric permittivity of water,ammonia, and chlorine

A theory of dielectric polarization of a substance is developed. The theory is verified by experiment and by phenomenological relations that follow from the determination of polarization, molar polarization, and dielectric permittivity.Notation _s static dielectric permittivity - high-frequency dielectric permittivity - _s permittivity perpendicular to the acisC - _s permittivity in the direction of the axisC - a average molecular polarizability - dielectric susceptibility - _i molecular hyperpolarizability - p ⁰ constant dipole moment of a molecule - p dipole moment of a molecule in condensed state - p _add additional dipole moment of a molecule - P polarization of a substance - P _m molar polarization - k Boltzmann constant - T Kelvin temperature - t Celsius temperature - angle between the vectors and - F internal electric field strength - Û internal interaction energy, J·mol^–1 - û internal interaction energy per molecule - N ₀ Avogacro number - V ₀ molar volume - a _t total molecular polarizability - H ⁰ (H) enthalpy as a function of temperature - l(x) Langevin function - n molecular concentration Murmansk State Academy of Fish Fleet. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 68, No. 5, pp. 767–773, September–October, 1995.     

Thermal boundary resistance in superfluid4He nearT λ

New measurements of the boundary resistivity in superfluid⁴He (2ppb³He) nearT are reported as a function of ¦¦ ( =T/T (Q) — 1) and of heat flux Q in a cell with parallel polished copper surfaces. Here we call T(Q) the temperature where the superfluid state abruptly disappears. In this design, the sidewall gaps between the copper pieces and the stainless steel spacer were eliminated. In contrast to several previous experiments but in agreement with those of Li and Lip a, no largeQ-dependent boundary resistivity anomaly was detected. However, as ¦¦ 0 the small weakly divergent resistivity was observed and its dependence onQ over the experimental range 1 <Q < 80 W/cm² was found to be very small. These new results are compared with previous experiments and predictions. An explanation of the previously observed anomalous transport phenomena is presented in terms of a heat flow through the sidewall gaps in these cells, and its limitation by a critical flow value _c. This phenomenological model can be fit satisfactorily to the observations. In the appendix we calculate _c from mutual friction.     

Low endurance fatigue in metals and polymers

The fatigue behaviour of commercially pure aluminium and of nylon under sequentially varying strain amplitudes is compared with a damage law of the type suggested by Miner. Aluminium obeys such a law for both cyclic and uniaxial prestrains but the behaviour of nylon is significantly affected by microcracking, which produces a marked effect of loading sequence.Appendix N Number of strain cycles at a given time - N _f Value of N at failure - True tensile stress - True stress range for a strain cycled specimen - _h Value of at half the life of the specimen - True tensile strain - Total true strain range - _p True plastic strain range (= the breadth of the hysteresis loop at = 0) - _d True diametral strain range - E Young's modulus - Linear strain hardening rate when tested at a particular value of _p - D Damage due to cycling - D _p Damage due to prestrain - _p Prestrain. C, K, K₁, , are constants     

High-frequency dielectric behaviour of polycrystalline zinc substituted cobalt ferrites

The dielectric constant () and complex dielectric constant () of zinc substituted cobalt ferrites have been measured at room temperature in the high frequency range 100 kHz to 1 MHz. The values of dielectric loss tangent (tan ) have been computed from and . Plots of dielectric constant () versus frequency show a normal dielectric behaviour of the spinel ferrites. The frequency dependence of dielectric loss tangent (tan ) is found to be abnormal, giving a peak at certain frequency for all the ferrites under investigation. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. The dielectric constant for these mixed ferrites is approximately inversely proportional to the square root of the resistivity. A plot of dielectric constant versus temperature shows a transition near the Curie temperature. An attempt is made to explain the possible mechanism for this observation.     

The dielectric properties of aluminium nitride substrates for microelectronics packaging

The dielectric behaviour of sintered polycrystalline aluminium nitride substrates has been examined over the frequency range 500 Hz to 10 MHz and correlated with composition and microstructure. For pure, white AlN at 20 ° C both the permittivity () and dielectric loss () are frequency independent giving = 9.2±0.05 and tan = (2.1±0.1) × 10^–3. The permittivity is less than for pure alumina substrates ( = 10.2) but tan compares favourably, with that (1.4 × 10^–3) of alumina, which though used more widely has a thermal conductivity some eight times less than that of AlN. The addition of impurities, particularly iron, to give opaque black AlN causes large, frequency dependent increases in ; at 500 Hz the loss is seven times that of pure white AlN and is two times greater above 100 kHz. The temperature coefficient of permittivity [( – 1)( + 2)]^–1 [/T]_p between –180 and +180 ° C for pure white AlN is 1.05×10^–5 K^–1 which is similar to the value of 9×10^–6 K^–1 for pure Al₂O₃. For impure black AlN the coefficient below 20 ° C is the same but above 20 ° C there is a rapid, non-linear increase of with temperature. Below 180 ° C for pure white AlN and 20 ° C for impure black AlN the values of temperature coefficient are frequency independent at least up to 200 kHz.     

Environmental stress cracking of glassy polymers and solubility parameters

The use of solubility parameters to predict critical stress ( _c ^* ) or strains (_c) for environmental cracking/crazing in several glassy polymers (e.g. PMMA, PPO, PS, PVC, PSF and PC) is re-examined. It is shown that the enthalpic component ( _H ) of the Flory-Huggins semi-interaction parameter () does not always give a good correlation between _c and _H even though solvent molar volume and polymer-solvent molecular interactions have already been considered. Re-analysis of available experimental data using Gent's theory shows that there is a general trend for _c ^* (or _c) to increase with . These results, therefore, support Gent's proposed mechanism of environmental stress crazing/cracking. It is finally concluded that unless a definite relationship can be established between _c or _c ^* with _H it is not possible to predicta priori _c or _c ^* , given the empirical solubility parameters of a solvent. Unfortunately, there are not many such relationships as discovered in this paper.     

Calculation of mixed-mode stress field at a sharp notch tip using <Emphasis Type="Italic">M</Emphasis><Subscript>1ɛ</Subscript>-integral

Direct computation of the mixed-mode stress field at a sharp notch tip appears to be difficult in that the mode I and mode II asymptotic stresses are in general governed by different orders of singularity. In this paper, we first present a path-independent integral termed M₁. The relation between M₁ and the generalized stress intensity factors is then derived and expressed as function of the notch angle. Once the M₁-integrals are accurately computed, the generalized SIF's and, consequently, the asymptotic mixed-mode stress field can thus be properly determined. No extra complementary solutions are required in the formulation. Further, no particular singular elements are required when the integration is performed by using finite elements. This work has been partially supported by National Science Council Grant No. NSC90-2211-E-008-040 to National Central University.     

Synthesis of the mineral geikielite MgTiO3

The preparation of pure geikielite, MgTiO₃, is carried out by precipitation with NaOH solution at pH 12 from solutions Ti⁴⁺/Mg²⁺ in molar ratio 1/1 M and calcination of the precipitate at 600°C in a dynamic atmosphere: heating rate 300°Ch^–1.At room temperature and a 1 KHz of frequency the dielectric constant () and the electric resistivity () were measured. The values were = 1 5.0 and = 1.1×10¹⁰ cm^–1.     

Dielectric behaviour of hot pressed AlN ceramic exposed to inorganic acid vapours

Dielectric behaviour of hot pressed AIN ceramic is studied before and after exposing the samples to inorganic acid (HCl and HNO₃) vapours with a specific aim to study the effect of these vapours on the dielectric constant () and dissipation factor (tan ). Four samples having different volume percentage of porosity (0.2 to 15%) are selected for this study. Dielectric dispersion increases after exposing the samples to the above acid vapours. Tan also increases quite appreciably; the increase being more at higher porosity. Recovery studies show that the exposure effect is reversible. The exposure time dependence of and tan indicates that these parameters show a maxima at a particular exposure time. However, no such maxima is observed in the gravimetric measurements. The increase in dielectric parameters after exposure to acid vapours is explained in terms of the ionic conduction due to the dissociation of these vapours in the presence of moisture. The porosity dependence of this effect is discussed in terms of closed and open porosity reported by other workers.     

Characterization of lead zirconate titanate thin film deposition onto Pt/Ti/SiO2/Si substrates

Lead zirconate titanate, (Pb(Zr_0.52Ti_0.48)O₃PZT) thin films were deposited onto a Pt/Ti/SiO_2/Si substrate using radio frequency (r.f.) planar magnetron sputtering in this study. The deposited PZT thin films were almost amorphous before the annealing processes and developed a perovskite structure after the annealing process. If the annealing temperature was too low or annealing time too short, pyrochlore would form. However, if the annealing temperature was too high or annealing time too long, the thin film structure would degrade due to the volatilization of PbO. The significant finding in this experiment is that high quality perovskite PZT thin films on Pt/Ti/SiO_2/Si substrates can be obtained by adjusting the annealing temperature to a range of 650 °C to 850 °C and annealing time to a range from 5 to 80 min. In this experiment, the optimal annealing condition was an annealing temperature of 650 °C and time of 20 min. The properties of PZT thin film annealed at 650 °C for 20 min were dielectric constant _r = 869 free dielectric constant ^T ₃₃ = 893 piezoelectric constant d₃₃ = 2.03p m V^-1 piezoelectric constant g₃₃ = 2.57 x 10^-4 V m N^-1, remanent polarization P₁ = 112.5 nC cm^-2 and coercive field E_c= 0.061 kV cm^-1.     

Study on the dielectric properties of oxide-doped Ba(Ti,Sn)O3 ceramics prepared from ultrafine powder

Ultrafine BaTiO₃ and BaSnO₃ powders were prepared by thermal decomposition of oxalates through synthesis by the method of co-precipitation; Dy₂O₃, Nb₂O₅ and ZnO, used as dopants, were added to the main constituents, known as the tailor-made Ba(Ti, Sn)O₃, according to the indicated compositions, then the batches were mixed until they became homogeneous. Careful treatment was necessary in later stages of the process of ceramic making. The dielectric properties of the ceramics were measured. It was found that high , low tan and low d/dt were characteristics of these ceramics. The results could be explained by the effects of peak shifting, broadening and grain-size inhibition. The relationship between composition, structure and properties is discussed.     

Dielectric properties of thin solid films formed on silicon

We report on the measurement of the frequency-dependent complex permittivity, ()=()-i(), over the frequency range, 30 MHz to 6 GHz, of silicon wafers and of thin dielectric films formed on silicon. Measurements, as a function of temperature and time treatments, were obtained by means of an HP Network Analyzer and dielectric probe and the resulting ()and()plots for the silicon wafers are shown to have a Debye-type [1] profile, thereby indicating that the associated polarization mechanism is of the orientational variety.     

Effect of mica on the dielectric relaxation of polyvinyl chloride (PVC) films

Dielectric constant () and dielectric loss () have been measured on polyvinyl chloride (PVC) and PVCs containing different weight ratio of mica at different temperatures and frequencies. It has been found that the dielectric constant and dielectric loss increases with the increasing amount of mica in the composite until a certain percentage of mica. The activation energy values were calculated for these materials. It was observed that the activation energy values go on decreasing with the increasing amount of mica in the composites. The results have been explained on the basis of the space charge effect and increase in the free volume of PVC with the addition of mica in it.