微波功率放大器非线性特性分析

为判断微波功率放大器非线性失真的主要影响因素,首先,在传统幂级数模型的基础上对功率放大器的非线性幅度失真和相位失真进行拟合,基于包络分析法给出了功率放大器非线性失真与幅度和相位失真间的解析关系;其次,对幅度失真和相位失真引起的非线性失真进行了分析,给出了两者之间的等效失真关系式,据此可对任意给定的功率放大器进行分析,以确定非线性失真的主要影响因素,并用于指导模拟预失真线性化器的设计与调试;最后,通过对一Ka频段行波管放大器的非线性测试及模拟预失真线性化,验证了所提出的功率放大器非线性分析的正确性及幅相等效失真关系式的有效性。     

外调制光发射机非线性补偿技术研究

讨论了外调制光传输系统中非线性补偿技术,分析了外调制光发射机存在的非线性失真问题:包括功率放大器引起的失真以及外调制器引起的失真。重点讨论了预失真补偿技术,寻找一种针对整个外调制发射机端非线性失真的补偿方案,设计出适用于外调制光发射机的预失真电路。     

多频率合成信号包络优化的初相搜索方法

基于对多频率合成信号通过非线性器件产生非线性失真的分析,推导了通过优化输入信号包络减小非线性失真的理论,并提出了实现输入信号包络优化的快速初相搜索算法,对使用该方法进行输入信号包络优化前后的非线性失真进行了仿真比较,结果表明对输入信号使用快速初相搜索算法优化后可以减小非线性失真。     

卫星通信中的数字基带预失真技术研究

数字基带预失真技术是克服高功率放大器非线性失真最有效的方法之一。早期对预失真技术的研究大多局限与无记忆非线性，但对于宽带和多载波应用。记忆非线性失真将不能再被忽略，无记忆预失真非线性补偿机制可能失效。文中研究了卫星通信系统中大功率记忆非线性功放的自适应基带预失真线性化技术，提出了一种基于记忆多项式的非直接学习结构的自适应基带预失真方案，给出了自适应算法。仿真结果表明，该方案能有效抑制带外频谱扩散，减小带内失真，降低误比特率，实现有记忆非线性大功率放大器的自适应预失真。     

微型扬声器谐波失真分析

总谐波失真(THD)是评价一个扬声器好坏的主要参数,而谐波失真产生的原因是来自于扬声器振膜的非线性振动。针对一类典型的微型扬声器的谐波失真问题进行了研究。首先根据扬声器的结构特点和力学分析建立了振膜非线性振动的数学模型。其次,应用四阶龙格-库塔法和傅里叶变换法给出了此扬声器总谐波失真的数值计算结果。并且采用KLIPPEL声学测量仪器,在消声试验室中测试测得此扬声器样品的总谐波失真数据。总谐波失真的数值计算结果与实验测量值符合较好,佐证了本文理论模型和数值方法的正确性。最后,通过数值模拟讨论了减小扬声器谐波失真优化设计的可能性。     

降低扬声器调制失真的方法研究

作为评价扬声器单元非线性失真的重要指标之一,调制失真越来越引起研究者的重视;以驱动力因数剧变化所引起的幅度调制失真（AMD）为主要研究目标,通过实际测量,进一步阐明了AMD大小、音圈初始位置及尉分布三者之间的对应关系,并以此为依据对降低扬声器单元的调制失真给出了一些建议。     

MQAM 功放器件非线性失真均衡器

本文给出了一种具有记忆能力的自适应非线性失真预均衡器,用于补偿MQAM高功率放大器在非线性区域工作时引入的具有记忆的3阶非线性失真,采用Volterra级数模型分析并补偿这种非线性失真,系统模拟证明这种结构简单的预均衡器对系统的非线性失真具有较好的校正作用。     

发射机中非线性失真补偿系统的设计与实现

分析了短波功率放大器非线性失真的产生原因,介绍了改善放大器非线性失真指标的各种技术（包括功率回退和预失真）,提出了一种采用预补偿电路来消除由谐波和互调产生的各种非线性干扰的补偿系统设计方法。     

非线性失真的预失真校正分析

本文中利用Volterra级数对用预失真方法校正非线性失真的原理进行了分析。开发的一套自动失真校正装置已用于彩色电视发射机的非线性失真校正,试验结果表明利用该装置可显著降低输出的互调失真电平。     

基于STM32的非线性失真放大器设计与测试分析

非线性失真放大器装置主要由晶体管、模拟开关等元器件所构成的非线性失真信号发生放大器和基于STM32的总谐波失真度测量仪组成,可以用于产生在模拟电子电路中常见的4种非线性失真信号,即顶部、底部、双向和交越失真信号,测试仪可以用于对上述4种非线性失真信号进行总谐波失真度的测量.在软硬联调测试中,该非线性失真放大器装置可以输...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.