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激光晶化制备多晶硅薄膜技术 总被引:1,自引:0,他引:1
激光晶化是一种制作晶硅薄膜器件(如薄膜晶体管、太阳能电池)很有效的技术.展望了低温多晶硅薄膜的应用前景,详细介绍了近几年激光晶化制备多晶硅薄膜技术的研究成果,并就激光对非晶硅作用的原理作了简单讨论. 相似文献
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为了研究连续激光晶化非晶硅薄膜中激光功率密度对晶化效果的影响,利用磁控溅射法制备非晶硅薄膜,采用连续氩氪混合离子激光器对薄膜进行退火晶化,用显微喇曼光谱测试技术和场发射扫描电子显微镜研究了薄膜在5ms固定时间下不同激光功率密度对晶化效果的影响,并对比了普通玻璃片和石英玻璃两种衬底上薄膜晶化过程的差异。结果表明,在一定激光功率密度范围内(0kW/cm2~27.1kW/cm2),当激光功率密度大于15.1kW/cm2时,普通玻璃衬底沉积的非晶硅薄膜开始实现晶化;随着激光功率密度的增大,晶化效果先逐渐变好,之后变差;激光功率密度增大到24.9kW/cm2时,薄膜表面呈现大面积散落的苹果状多晶硅颗粒,晶粒截面尺寸高达478nm ;激光功率密度存在一个中间值,使得晶化效果达到最佳;石英衬底上沉积的非晶硅薄膜则呈现与前者不同的结晶生长过程,当激光功率密度为19.7kW/cm2时,薄膜表面呈现大晶粒尺寸的球形多晶硅颗粒,并且晶粒尺寸随着激光功率密度的增大而增大,在 27.1kW/cm2处晶粒尺寸达到最大5.38m。研究结果对用连续激光晶化法制备多晶硅薄膜的研究具有积极意义。 相似文献
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高温处理对镍诱导晶化硅上的薄膜晶体管性能的影响 总被引:1,自引:1,他引:0
采用标准双栅 CMOS工艺在镍诱导非晶硅横向晶化形成的多晶硅上制造了高性能的薄膜晶体管 ,并详细研究了器件制备前高温预处理对薄膜晶体管性能的影响 .实验发现不同的温度处理 ,将引起器件性能的显著变化 .在10 0 0℃预处理温度下获得了最好的器件性能 .10 0 0℃在 NMOS管中测得的电子迁移率达 314 cm2 / (V· s) ,分别比在 110 0℃和未做高温处理下的大 10 %和 2 2 % .10 0 0℃下器件的最大开关电流比也达到了 3× 10 8.对器件的进一步重复性研究证实了上述结果的可靠性 相似文献
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主要介绍1种用硅的微机械加工技术研制的硅电容式传感器,采用电容层析法(ECT)技术可检测尺寸为50μm左右的微小粒子。其中的主要技术有硅材料的微机械加工技术,特厚光刻胶的匀胶曝光技术,微集成电镀技术。 相似文献
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《中国集成电路》2014,(12)
正About SilicoN Creations Silicon Creations provides world class silicon IP for precision and general purpose timing(PLLs),SerDes and high-speed differential IOs.We have a deep commitment to our customer's success and to providing complete support.Our careful development procedures and strong QA result in robust and correct designs.And in our labs we comprehensively test all key blocks.As a 相似文献
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硅光子学 总被引:1,自引:1,他引:0
邱元武 《激光与光电子学进展》2006,43(9):36-41
硅光子学有六个主要研究领域,包括产生光、在硅中选择地引导和传输光、编码光、探测光、包装器件和智能地控制这一切光子功能。综述了以上各领域的研究进展。 相似文献
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《Components and Packaging Technologies, IEEE Transactions on》2006,29(3):570-576
We fabricated a silicon microrefrigerator on a 500-$mu$ m-thick substrate with the standard integrated circuit (IC) fabrication process. The cooler achieves a maximum cooling of 1$^circ$ C below ambient at room temperature. Simulations show that the cooling power density for a$hbox40times hbox40 muhboxm^2$ device exceeds 500$hboxW/cm^2$ . The unique three-dimensional (3-D) geometry, current and heat spreading, different from conventional one-dimensional (1-D) thermoelectric device, contribute to this large cooling power density. A 3-D finite element electrothermal model is used to analyze non-ideal factors inside the device and predict its limits. The simulation results show that in the ideal situation, with low contact resistance, bulk silicon with 3-D geometry could cool$sim hbox20 , ^circhboxC$ with a cooling power density of 1000$hboxW/cm^2$ despite the low thermoelectric figure-of-merit (ZT) of the material. The large cooling power density is due to the geometry dependent heat and current spreading in the device. The non-uniformity of current and Joule heating inside the substrate also contributes to the maximum cooling of silicon microrefrigerator, exceeding 30% limit given in one–dimensional thermoelectric theory$DeltaT_max=hbox0.5hboxZT_c^2$ , where$T_c$ is the cold side temperature. These devices can be used to remove hot spots on a chip. 相似文献
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《III》2003,16(8):30
Arroyo Optics, a flexible wavelength management solution manufacturer, and Lightcross Inc, a manufacturer of integrated, silicon-based optical products for telecoms equipment have agreed to merge. Arroyo Optics, the resulting company, will comprise technologies and products developed with over $50m of combined R&D capital provided by private equity investors. Both companies focus on products targeting fibre optics infrastructure applications.Visit www.three-fives.com for the latest advanced semiconductor industry news 相似文献
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Silicon Photonics 总被引:4,自引:0,他引:4
After dominating the electronics industry for decades, silicon is on the verge of becoming the material of choice for the photonics industry: the traditional stronghold of III-V semiconductors. Stimulated by a series of recent breakthroughs and propelled by increasing investments by governments and the private sector, silicon photonics is now the most active discipline within the field of integrated optics. This paper provides an overview of the state of the art in silicon photonics and outlines challenges that must be overcome before large-scale commercialization can occur. In particular, for realization of integration with CMOS very large scale integration (VLSI), silicon photonics must be compatible with the economics of silicon manufacturing and must operate within thermal constraints of VLSI chips. The impact of silicon photonics will reach beyond optical communication-its traditionally anticipated application. Silicon has excellent linear and nonlinear optical properties in the midwave infrared (IR) spectrum. These properties, along with silicon's excellent thermal conductivity and optical damage threshold, open up the possibility for a new class of mid-IR photonic devices 相似文献
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Brian Dipert 《电子设计技术》2004,11(1):68-70,72,74,75
看来您已认定,采取购买并组装现成的专用标准产品(ASSP),如嵌入式控制器、外设芯片等,然后再编写您自己的软件这种做法将不能使您设计的产品与您竞争对手的产品有足够大的差别.因此,您会决定选择芯片级设计.两大硅平台竞争对手及其各自的折衷方案已经在各种工业论坛上引起广泛的争论.不过如果您刚涉足这场争论,则很有必要了解下述有关争论的概要. 相似文献