V2O4-PEPC composite based pressure sensor

In this study, V₂O₄-PEPC based pressure sensor was designed and fabricated by drop-casting the blend of V₂O₄-PEPC microcomposite thin films of vanadium oxide (V₂O₄) micropowder (10 wt.%) and poly-N-epoxypropylcarbazole, PEPC (2 wt.%) in benzol (1 ml) on steel substrates. The thickness of the V₂O₄-PEPC films was in the range of 20-40 μm. The DC resistance of the sensor was decreased in average by 24 times as the pressure was increased up to 11.7 kNm⁻². The resistance-pressure relationships were simulated.     

Thermally grown vanadium oxide films and their electrical properties

A metal–insulator transition (MIT) occurring in vanadium oxide films prepared in different ways has been widely studied in many laboratories. It consists of a resistive change of various orders of magnitude taking place while traversing a temperature close to 67 °C. In this work the properties of VO_x films synthesized by thermal treatment of vanadium films which were vacuum-evaporated on an oxidized silicon substrate are shown. Such thermal oxidizing treatment was performed under atmospheric air at different temperatures during distinct times. Ellipsometry measurements allowed determining the thickness and optical constants of the layers after the oxidation process. From XRD, Raman and FTIR measurements, several phases with distinct oxygen content, V₂O₃, V₃O₅, VO₂ and V₂O₅, were found in the films, depending on the oxidation time and temperature. Current–temperature measurements across the films were carried out by using sandwich-type metal–insulator–metal structures. Unlike former studies on similar structures, no MIT was observed from these measurements. On the other hand, from room-temperature current–voltage measurements a well defined memristive behavior was found as a regular result in most of our structures. This memristive behavior is ascribed to the complex defect structure in the films, including the variable amount of oxygen vacancies in the lattice, rather than to the above-mentioned metal–insulator transition in vanadium oxide.     

二氧化钒薄膜的退火组分变化及光学特性研究

为得到高纯度的VO2薄膜,对其制备参数进行了探索。VO2薄膜用磁控溅射法制备。对不同条件下制备的VO2薄膜用X射线电子能谱仪(XPS)测试,并通过拟合来得到3,4,5价钒在薄膜中所占的比例。为提高4价钒的含量对薄膜进行了退火处理,分析了退火对氧化钒薄膜中4价钒含量的影响。结果表明,VO2薄膜对10.6μm激光的透过率从60℃时的74%变到78℃时的11.93%,发生了相变。     

Electrochemically Triggered Metal–Insulator Transition between VO2 and V2O5

Distinct properties of multiple phases of vanadium oxide (VO_x) render this material family attractive for advanced electronic devices, catalysis, and energy storage. In this work, phase boundaries of VO_x are crossed and distinct electronic properties are obtained by electrochemically tuning the oxygen content of VO_x thin films under a wide range of temperatures. Reversible phase transitions between two adjacent VO_x phases, VO₂ and V₂O₅, are obtained. Cathodic biases trigger the phase transition from V₂O₅ to VO₂, accompanied by disappearance of the wide band gap. The transformed phase is stable upon removal of the bias while reversible upon reversal of the electrochemical bias. The kinetics of the phase transition is monitored by tracking the time‐dependent response of the X‐ray absorption peaks upon the application of a sinusoidal electrical bias. The electrochemically controllable phase transition between VO₂ and V₂O₅ demonstrates the ability to induce major changes in the electronic properties of VO_x by spanning multiple structural phases. This concept is transferable to other multiphase oxides for electronic, magnetic, or electrochemical applications.     

Influence of N2 introduction on structural and optical properties of V-doped ZnO thin films grown by low-temperature reactive RF magnetron sputtering

The influences of N₂ introduction to a sputtering gas on structural and optical properties of vanadium-doped ZnO (VZO) films, grown by using reactive RF magnetron sputtering on a quartz substrate at room temperature, were investigated. In the VZO films, V doping caused to form a large number of O vacancies (V_O) and degraded both the c-axis orientation and optical transmittance. While, on the contrary, the ZnO(002) diffraction intensity of 3.5-at.% VZO films increased adding N₂ with a partial pressure ratio (α_N2) >2% reaching a maximum at α_N2 =5%. The average optical transmittance (wavelengths: 450−800 nm) of the 3.5-at.% VZO films was also improved by the N₂ introduction and reached 74% at α_N2 =5%. As a result of the analyses of the chemical binding states of the incorporated N atoms via the Raman spectroscopy and XPS, it was confirmed that the O sites were substituted by the N atoms and the amount of incorporated N increased by the high V doping. From the above, the N₂ introduction was effective to suppress the V_O formation even in room-temperature-grown VZO films, so it enables to improve both the c-axis orientation and optical transmittance.     

A Lyotropic Liquid‐Crystal‐Based Assembly Avenue toward Highly Oriented Vanadium Pentoxide/Graphene Films for Flexible Energy Storage

A novel lyotropic liquid‐crystal (LC) based assembly strategy is developed for the first time, to fabricate composite films of vanadium pentoxide (V₂O₅) nanobelts and graphene oxide (GO) sheets, with highly oriented layered structures. It is found that similar lamellar LC phases can be simply established by V₂O₅ nanobelts alone or by a mixture of V₂O₅ nanobelts and GO nanosheets in their aqueous dispersions. More importantly, the LC phases can be retained with any proportion of V₂O₅ nanobelts and GO, which allows facile optimization of the ratio of each component in the resulting films. Named VrGO, composite films manifest high electrical conductivity, good mechanical stability, and excellent flexibility, which allow them to be utilized as high performance electrodes in flexible energy storage devices. As demonstrated in this work, the VrGO films containing 67 wt% V₂O₅ exhibit excellent capacitance of 166 F g^?1 at 10 A g^?1; superior to those of the previously reported composites of V₂O₅ and nanocarbon. Moreover, the VrGO film in flexible lithium ion batteries delivers a high capacity of 215 mAh g^?1 at 0.1 A g^?1; comparable to the best V₂O₅ based cathode materials.     

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

A study of the growth parameters governing the nucleation of metastable superconducting A15 V₃Si on Si and A1₂O₃ is presented. Nominally, 500Å films of V_1-xSi_x were produced through codeposition of V and Si onto heated (111) Si and (1102) A1₂O₃ substrates. Samples were prepared in a custom-built ultrahigh vacuum (UHV) chamber containing dual e-beam evaporation sources and a high temperature substrate heater. V and Si fluxes were adjusted to result in the desired average film composition. V_0.75Si_0.25 films prepared at temperatures in excess of 550° C on Si show significant reaction with the substrate and are nonsuperconducting while similar films grown on A1₂O₃ exhibit superconducting transition temperatures(@#@ T_c @#@) approaching bulk values for V₃Si (16.6-17.1 K). Codeposition at temperatures between 350 and 550° C results in superconducting films on Si substrates while growth at lower temperatures results in nonsuperconducting films. Lowering the growth temperature to 400° C has been shown throughex situ transmission electron microscopy (TEM) and Auger compositional profiling to minimize the reaction with the Si substrate while still activating the surface migration processes needed to nucleate A15 V₃Si. Variation of film composition aboutx = 0.25 is shown to result in nonsuperconducting films for highx and superconducting films with T_c approaching the bulk V value (5.4 K) for lowx. Finally, lowering the V_0.75Si_0.25 deposition rate is shown to raise T_c.     

The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography

Amorphous (Al₂O₃)_x–(TiO₂)_1−x composite films are prepared using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen at room temperature. The optical constants of (Al₂O₃)_x–(TiO₂)_1−x composite films are linearly dependent on the Al₂O₃ mole fraction in the Al₂O₃–TiO₂ composite film. The optical constants of these Al₂O₃–TiO₂ composite films can be made to meet the optical requirements for a high transmittance attenuated phase shift mask (HT-APSM) blank by tuning the Al₂O₃ mole fraction. The Al₂O₃ mole fraction range that would allow the films to meet the optical requirements of an HT-APSM blank for ArF immersion lithography is calculated to be between 76% and 84%. One π-phase-shifted Al₂O₃–TiO₂ composite thin film to be used as an HT-APSM blank for ArF immersion lithography is fabricated and is shown to satisfy the optical requirements.     

Fast and Reversible Li Ion Insertion in Carbon‐Encapsulated Li3VO4 as Anode for Lithium‐Ion Battery

Carbon‐encapsulated Li₃VO₄ is synthesized by a facile environmentally benign solid‐state method with organic metallic precursor VO(C₅H₇O₂)₂ being chosen as both V and carbon sources yielding a core–shell nanostructure with lithium introduced in the subsequent annealing process. The Li₃VO₄ encapsulated with carbon presents exceeding rate capability (a reversible capability of 450, 340, 169, and 106 mAh g^?1 at 0.1 C, 10 C, 50 C, and 80 C, respectively) and long cyclic performance (80% capacity retention after 2000 cycles at 10 C) as an anode in lithium‐ion batteries. The superior performance is derived from the structural features of the carbon‐encapsulated Li₃VO₄ composite with oxygen vacancies in Li₃VO₄, which increase surface energy and could possibly serve as a nucleation center, thus facilitating phase transitions. The in situ generated carbon shell not only facilitates electron transport, but also suppresses Li₃VO₄ particle growth during the calcination process. The encouraging results demonstrate the significant potential of carbon encapsulated Li₃VO₄ for high power batteries. In addition, the simple generic synthesis method is applicable to the fabrication of a variety of electrode materials for batteries and supercapacitors with unique core–shell structure with mesoporous carbon shell.     

Effect of post-growth annealing on the structural,optical and electrical properties of V2O5 nanorods and its fabrication,characterization of V2O5/p-Si junction diode

We report the synthesis of V₂O₅ nanorods by utilizing simple wet chemical strategy with ammonia meta vanadate (NH₄VO₃) and polyethylene glycol (PEG) exploited as precursor and surfactant agent, respectively. The effect of post-annealing on structural, optical and electrical properties of V₂O₅ nanorods was characterized by XRD, HRSEM-EDX, TEM, FT-IR, UV (DRS), PL, TG–DTA and DC conductivity studies. The X-ray diffraction analysis revealed that the prepared sample annealed at 150 °C for 5 h which exhibited anorthic phase of V₅O₉ and annealed at 300–600 °C showed the anorthic phase change to orthorhombic phase of V₂O₅ due to the post-annealing effect. The surface morphology results indicated that increasing temperature caused a change from microrods to a nanorods shape in the morphology of V₂O₅. FT-IR spectrum confirmed that the presence of V₂O₅ functional groups and the formation of V–O bond. The optical band gap was found in the range 2.5–2.48 eV and observed to decreases with various annealed temperature. The DC electrical conductivity was studied as a function of temperature which indicated the semiconducting nature. Further, the potential of V₂O₅ nanostructures were grown on the p-Si substrate using the nebulizer spray technique. The junction properties of the V₂O₅/p-Si diode were evaluated by measuring current (I)–voltage (V) and AC characteristics.     

Effects of Growth Temperature and Annealing on Properties of Zn3Sn2O7 Thin Films and Application in TFTs

The effects of growth temperature and annealing on the physical properties of Zn₃Sn₂O₇ thin films were investigated in this work. The Zn₃Sn₂O₇ thin films were deposited on glass substrates by radio frequency (rf) magnetron sputtering. It is found that the films are amorphous regardless of the growth temperature. The film grown at room temperature shows the highest mobility of 8.1 cm² V^?1 s^?1 and the lowest carrier concentration of 2.0 × 10¹⁵ cm^?3. The highest carrier concentration of 1.6 × 10¹⁹ cm^?3 is obtained at the growth temperature of 250°C. Annealing treatment of the Zn₃Sn₂O₇ thin films resulted in increases of carrier concentration and mobility. The average transmittance of the as-deposited and annealed films reaches 80%. By using a Zn₃Sn₂O₇ thin film as the channel and a Ta₂O₅ thin film as the insulating layer, we fabricated transparent Zn₃Sn₂O₇ thin-film transistors with field-effect mobility of 21.2 cm² V^?1 s^?1, on/off current ratio of 10⁵, threshold voltage of 0.8 V, and subthreshold swing of 0.8 V/decade.     

Properties of V–Ce mixed-oxide thin films deposited by RF magnetron sputtering

Thin films of vanadium cerium mixed oxides are good counter-electrodes for electrochromic devices because of their passive optical behavior and very good charge capacity. We deposited thin films of V–Ce mixed oxides on glass substrates by RF magnetron sputtering under argon at room temperature using different power settings. The targets were pressed into pellets of a powder mixture of V₂O₅ and CeO₂ at molar ratios of 2:1, 1:1, and 1:2. For a molar ratio of 2:1, the resulting crystalline film comprised an orthorhombic CeVO₃ phase and the average grain size was 89 nm. For molar ratios of 1:1 and 1:2, the resulting films were completely amorphous in nature. Scanning electron microscopy images and energy-dispersive X-ray spectroscopy data confirmed these results. The optical properties of the films were studied using UV-Vis-NIR spectrophotometry. The transmittance and indirect allowed bandgap for the films increased with the RF power, corresponding to a blue shift of the UV cutoff. The average transmittance increased from 60.9% to 85.3% as the amount of CeO₂ in the target material increased. The optical bandgap also increased from 1.94 to 2.34 eV with increasing CeO₂ content for films prepared at 200 W. Photoacoustic amplitude (PA) spectra were recorded in the range 300–1000 nm. The optical bandgap was calculated from wavelength-dependent normalized PA data and values were in good agreement with those obtained from UV-Vis-NIR data. The thermal diffusivity calculated for the films increased with deposition power. For thin films deposited at 200 W, values of 53.556×10⁻⁸, 1.069×10⁻⁸, and 0.2198×10⁻⁸ m²/s were obtained for 2:1, 1:1, and 1:2 V₂O₅/CeO₂, respectively.     

Tailoring Vanadium Dioxide Film Orientation Using Nanosheets: a Combined Microscopy,Diffraction, Transport,and Soft X‐Ray in Transmission Study

Vanadium dioxide (VO₂) is a much‐discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of VO₂ is realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X‐ray transparent silicon nitride membranes. The out‐of‐plane orientation of the VO₂ thin films is controlled at will between (011)_M1/(110)_R and (?402)_M1/(002)_R by coating the bulk substrates with Ti_0.87O₂ and NbWO₆ nanosheets, respectively, prior to VO₂ growth. Temperature‐dependent X‐ray diffraction and automated crystal orientation mapping in microprobe transmission electron microscope mode (ACOM‐TEM) characterize the high phase purity, the crystallographic and orientational properties of the VO₂ films. Transport measurements and soft X‐ray absorption in transmission are used to probe the VO₂ metal–insulator transition, showing results of a quality equal to those from epitaxial films on bulk single‐crystal substrates. Successful local manipulation of two different VO₂ orientations on a single substrate is demonstrated using VO₂ grown on lithographically patterned lines of Ti_0.87O₂ and NbWO₆ nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet‐templated VO₂ films for advanced lensless imaging of the metal–insulator transition using coherent soft X‐rays is discussed.     

Investigation on a source of dominant donor in vanadium-doped ZnO films grown by reactive RF magnetron sputtering

The influences of O₂ gas addition in argon plasma on reactive RF magnetron sputtering deposition of vanadium-doped ZnO (VZO) films were examined. ZnO or VZO films with vanadium concentration of 2 at% were deposited on a quartz substrate. Vanadium doping caused oxygen deficiency in ZnO and formed a large number of zinc interstitials (Zn_i), oxygen vacancies (V_O), and zinc vacancies (V_Zn). Carrier density of VZO decreased from 9×10²⁰ to 9×10¹⁸ cm⁻³ between O₂ partial pressure ratio (α_O2) of 0.6% and 1.0% in spite of the increase in valence number of vanadium. This result suggests that Zn_i is the dominant donor in VZO since Zn_i is a shallow-level defect. Average optical transmittance (T_v) at wavelength between 450 and 800 nm of VZO was 61% while that of ZnO was 82% without oxygen addition. Although the optical transmittance of VZO was largely deteriorated by optical absorption of V_O, T_v of VZO improved by oxygen addition and reached 85% at α_O2 of 1.0% via suppression of V_O formation.     

Resistive humidity sensor based on vanadium complex films

A resistive-type relative humidity （RH） sensor based on vanadium complex （VO2（3-f[）） film is reported in this study. Gold electrodes were deposited on the glass substrates in a co-planar structure. A thin film of vanadium complex was coated as a humidity-sensing material on the top of the pre-patterned electrodes. The humidity-sensing principle of the sensor was based on the conductivity change of coated sensing element upon adsorption/desorption of water vapor. The resistance of the humidity sensor measured at 1 kHz decreased linearly with increasing the humidity in the range of 35%-70% RH. The overall resistance of the sensor decreases 11 times. An equivalent circuit for the VO2（3-fl） based resistive-type humidity sensor was developed. The properties of the sensor studied in this work make it beneficial for use in the instruments for environmental monitoring of humidity.     

A Family of High‐Performance Cathode Materials for Na‐ion Batteries,Na3(VO1−xPO4)2 F1+2x (0 ≤ x ≤ 1): Combined First‐Principles and Experimental Study

Room‐temperature Na‐ion batteries (NIBs) have recently attracted attention as potential alternatives to current Li‐ion batteries (LIBs). The natural abundance of sodium and the similarity between the electrochemical properties of NIBs and LIBs make NIBs well suited for applications requiring low cost and long‐term reliability. Here, the first successful synthesis of a series of Na₃(VO_1?x PO₄)₂F_1+2x (0 ≤ x ≤ 1) compounds as a new family of high‐performance cathode materials for NIBs is reported. The Na₃(VO_1?x PO₄)₂F_1+2x series can function as high‐performance cathodes for NIBs with high energy density and good cycle life, although the redox mechanism varies depending on the composition. The combined first‐principles calculations and experimental analysis reveal the detailed structural and electrochemical mechanisms of the various compositions in solid solutions of Na₃(VOPO₄)₂F and Na₃V₂(PO₄)₂F₃. The comparative data for the Na _y (VO_1?x PO₄)₂F_1+2x electrodes show a clear relationship among V³⁺/V⁴⁺/V⁵⁺ redox reactions, Na⁺?Na⁺ interactions, and Na⁺ intercalation mechanisms in NIBs. The new family of high‐energy cathode materials reported here is expected to spur the development of low‐cost, high‐performance NIBs.     

Influence of annealing on the structural,optical and electrical properties of indium oxide films deposited on c-sapphire substrate

Indium oxide (In₂O₃) films were prepared on Al₂O₃ (0001) substrates at 700 °C by metal-organic chemical vapor deposition (MOCVD). Then the samples were annealed at 800 °C, 900 °C and 1 000 °C, respectively. The X-ray diffraction (XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment. Triangle or quadrangle grains can be observed, and the corner angle of the grains becomes smooth after annealing. The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm²·V^-1·s^-1. The average transmittance for the films in the visible range is over 90%. The optical band gaps of the samples are about 3.73 eV, 3.71 eV, 3.70 eV and 3.69 eV corresponding to the In₂O₃ films deposited at 700 °C and annealed at 800 °C, 900 °C and 1 000 °C, respectively.     

Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells

Nanocrystal V₂O₅ dispersion processed thin films are introduced as efficient hole extraction interlayer in normal architecture P3HT:PCBM solar cells. Both thin and rather thick interlayers are studied and demonstrated to work properly in organic photovoltaic. Nanocrystal V₂O₅V₂O₅ layers effectively block electrons and effectively extract holes at the ITO anode. Very constant and high V_OC (above 0.56 V) are easily achieved. Comparable J_SC and PCE are demonstrated for nanocrystal dispersion-processed devices when compared with amorphous sol–gel processed devices. The excellent functionality of nanocrystal V₂O₅ interlayers in Si-PCPDTBT:PCBM devices further demonstrates the broad application potential of this material class for photovoltaic applications.     

Phase relations in Cu- RO1.5- O (R < Ho,Er, Yb) and gibbs energy of formation of Cu2R2O5 (R < Ho,Er, Yb) between 1000 and 1325K

Phase relations in Cu-RO_1.5-O(R < Ho,Er,Yb) ternary systems at 1273K have been established by isothermal equilibration of samples containing different ratios of Cu:R(R < Ho,Er,Yb) in flowing air or high purity argon atmosphere for four days. The samples were then rapidly cooled to ambient temperature and the coexisting phases were identified by powder x-ray diffraction analysis. Only one ternary oxide, Cu₂R₂O₅(R < Ho,Er,Yb) was found to be stable. The chemical potential of oxygen for the coexistence of the three phase assemblage, Cu₂O + R₂O₃ + Cu₂R₂O₅(R < Ho,Er,Yb) has been measured by employing the solid-state galvanic cells,< (−) Pt, Cu₂O + Ho₂O₃+ Cu₂Ho₂O₅//CSZ//Air (Po₂< 2.12 × 10⁴ Pa), Pt (+) (−) Pt, Cu₂O + Er₂O₃+ Cu₂Er₂O//CSZ//Air (Po₂< 2.12 × 10⁴ Pa), Pt (+) (−) Pt, Cu₂O + Yb₂O₃ + Cu₂Yb₂O₅//CSZ//Air (Po₂ < 2.12 × 10⁴ Pa), Pt (+) in the temperature range of 1000 to 1325K. Combining the measured emf of the above cells with the chemical potential of oxygen at the reference electrode, using the Nernst relationship, gives for the reactions, 2Cu₂O(s) + 2Ho₂O₃(s) + O₂(g) → 2Cu₂Ho₂O₅(s) (1) 2Cu₂O(s) + 2Er₂O₃(s) + O₂(g) → 2Cu₂Er₂O₅(s) (2) and 2Cu₂O(s) + 2Yb₂O₃(s) + O₂(g) → 2Cu₂Yb₂O₅(s) (3) δΜo₂ = −219,741.3 + 145.671 T (±100) Jmol⁻¹ (4) δΜo₂ = −222,959.8 + 147.98 T(±100) Jmol⁻¹ (5) and δΜo₂ = −231,225.2 + 151.847 T(±100) Jmol⁻¹ (6) respectively. Combining the chemical potential of oxygen for the coexistence of Cu₂O + R₂O₃ + Cu₂R₂O₅(R− Ho,Er,Yb) obtained in this study with the oxygen potential for Cu₂O + CuO equilibrium gives for the reactions, 2 CuO(s) + Ho₂O₃(s) → Cu₂Ho₂O₅(s) (7) 2 CuO(s) + Er₂O₃(s) → Cu₂Er₂O₅(s) (8) and 2 CuO(s) + Yb₂O₃(s) → Cu₂Yb₂O₅(s) (9) δG‡ < 22,870.3 − 23.160 T (±100) Jmol⁻¹ (10) δG‡ < 21,261.1 − 22.002 T (±100) Jmol⁻¹ (11) and δG‡ < 17,128.4 - 20.072 T (±100) Jmol^-1 (12) It can be clearly seen that the formation of Cu₂R₂O₅R < Ho,Er,Yb) from the component oxides is endothermic. Further, Cu₂R₂O₅(R < Ho,Er,Yb) are an entropy stabilized phases. Based on the results obtained in this study, the oxygen potential diagram for Cu-R-O(R < Ho,Er,Yb) ternary system at 1273K has been composed.     

Positive and Negative Pressure Regimes in Anisotropically Strained V2O3 Films

The metal-insulator phase transitions in V₂O₃ are considered archetypal manifestations of Mott physics. Despite decades of research, the effects of doping, pressure, and anisotropic strains on the transitions are still debated. To understand how these parameters control the transitions, anisotropically strained pure V₂O₃ films are explored with nearly the same contraction along the c-axis, but different degrees of ab-plane expansion. With small ab-plane expansion, the films behave similar to bulk V₂O₃ under hydrostatic pressure. However, with large ab-plane expansion, the films are driven into the “negative pressure” regime, similar to that of Cr-doped V₂O₃, exhibiting clear coexistence of paramagnetic insulator and paramagnetic metal phases between 180–500 K. This shows that c-axis contraction alone, or an increase in c/a ratio is insufficient for inducing “negative pressure” effects. Actually, c-axis contraction alone destabilizes the two insulating phases of V₂O₃, whereas a-axis expansion tends to stabilize them. The effects of strain are modeled using density functional theory providing good agreement with experimental results. The findings show that chemical pressure alone cannot account for the phase diagram of (V_1−xCr_x)₂O₃. This work enables to manipulate a Mott transition above room temperature, thereby expanding the opportunities for applications of V₂O₃ in novel electronics.