A Broad-Band, Ultra-Low-Noise Schottky Diode Receiver from 80 to 115 GHz Diode

A cryogenic 3-mm receiver has been developed which fully utilizes the low-noise potential of Schottky diodes by approaching the shot-noise limit within 10 percent. With a broad-band mixer design which properly terminates the input sidebands and reactively terminates the second harmonic of the local oscillator and its sidebands, the double sideband (DSB) mixer noise temperature is 35 K in the best case. This design has given an average DSB receiver noise temperature of 75 K over the 80 to 115-GHz band with a best noise temperature of 62 K.     

A Very Low-Noise Integrated 3MM-Wave Schottky Diode Mixer and PHEMT IF Amplifier

An integrated 3mm-wave Schottky diode mixer and pseudomorphic high-electron-mobility transistor (PHEMT) IF amplifier with record noise performance at room temperature is described. The design has shown the room-temperature double-sideband (DSB) receiver noise temperature T _R ^DSB of 190 K at 100 GHz due to a very low conversion loss in the full-height waveguide mixer and an ultra-low noise of the PHEMT IF amplifier. The receiver noise temperature has been reduced by a factor of 1.5 in comparison with the best previously reported 3mm-wave Schottky diode mixer receiver.     

A Broad-Band Second-Harmonic Mixer Covering 76-106 GHz

A broad-band second-harmonic millimeter-wave mixer has been constructed. The circuit consists of a single unencapsulated Schottky-barrier diode and embedding network which includes a wave absorber in the IF output terminal. The conversion loss of the mixer is 14.6/spl plusmn/0.9 dB over a frequency range of 76-106 GHz. The mixer is pumped by a Iocal oscillator that is tuned over the range of 37.15-52.15 GHz. The IF is kept constant at 1.7 GHz. The new mixer looks attractive for use in broad-band millimeter-wave measuring equipment, such as spectrum analyzers.     

The Measured and Computed Performance of a 140--220 GHz Schottky Diode Mixer

In this paper, we compare the measured and theoretical performance of a room-temperature single-ended Schottky diode mixer in the WR-5 (140-220-GHz) waveguide band. Using the computer program GISSMIX, combined with measurements made on a 100X scale model of the WR-5 mixer, we have been able to predict the millimeter-wave mixer performance over a wide tuning range with unprecedented accuracy. In addition we have examined the sensitivity of the mixer performance to various diode and mount characteristics. Our rneasured conversion loss and mixer noise temperature, single sideband, are 5.7 dB and 750 K at 180 GHz, and 5.7 dB and 500 K at 150 GHz, which we believe to be the best reported for a room-temperature mixer at these frequencies.     

A Low-Noise Terahertz SIS Mixer Incorporating a Waveguide Directional Coupler for LO Injection

We have developed a low-noise heterodyne waveguide Superconductor-Insulator-Superconductor (SIS) mixer with a novel local oscillator (LO) injection scheme for the Atacama Large Millimeter/submillimeter Array (ALMA) band 10, over the frequency range 0.78–0.95 THz. The SIS mixer uses radio frequency (RF) and LO receiving horns separately and a waveguide 10 dB LO coupler integrated in the mixer block. The insertion loss of the waveguide and coupling factor of the coupler were evaluated at terahertz frequencies at both room and cryogenic temperatures. The double-sideband (DSB) receiver noise temperatures were below 330 K (7.5hf/k _B) at LO frequencies in the range 0.801–0.945 THz. The minimum temperature was 221 K at 0.873 THz over the intermediate frequency range of 4–12 GHz at an operating temperature of 4 K. This waveguide heterodyne SIS mixer exhibits great potential for practical applications, such as high-frequency receivers of the ALMA.     

八毫米GaAs梁式引线肖特基势垒混频管

基于Pucel平面电容器模型和Berger平面电阻器的传输线模型(TLM),借助CAD技术,优化设计了平面型八毫米粱式引线混频管的几何参数,确定了关系到器件性能的几个关键尺寸 L_g、W_g、L_o和 L_b对总电容和串联电阻的影响.采用了类似于GaAs MESFET的制作工艺,并严格控制器件的几何参数.研制的八毫米混频管,典型结果是,在35GHz下,单管双边带噪声系数为4.8dB.     

A Unique 520–590 GHz Biased Subharmonically-Pumped Schottky Mixer

We report on the design and performance of a novel broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes. The suspended stripline circuit is fabricated on a GaAs membrane mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise radio frequency (RF) grounding, RF coupling and dc/intermediate frequency connections. At room temperature, the mixer has a measured double sideband noise temperature of 3000 to 4000 K across the design band.     

一种应用于GPS射频前端的低噪声混频器

为了克服混频器噪声对GPS接收机灵敏度造成的影响,设计了一种应用于GPS射频前端的低噪声混频器电路.采用自偏置缓冲级放大本振信号,有效地提高了电路性能.该混频器的转换增益为23 dB,噪声系数为4.55 dB,3阶交调点为-9.36 dBm,在1.57 GHz到1.6 GHz频段上,反射系数S11小于-15 dB,电路采用1.8 V电压供电;混频器核心电路静态工作电流1.2 mA,采用CMOS 0.18 μm工艺实现,芯片版图面积为160μm×360μm.     

Broad-Band Stepped Transformers from Rectangular to Double-Ridged Waveguide

The design of a series of broad-band Tchebycheff-type stepped waveguide transformers from various sizes of standard rectangular waveguides to a double ridged waveguide covering the frequency range of 4750 to 11,000 mc is described. Four separate transformers employing RG-67/U (WR-90), RG-68/U (WR-112), RG-106/U (WR-137), and WR-159 to Airtron ARA-133 double-ridged waveguide have been designed using this technique and cast in aluminum. The complete frequency range is covered by several pairs depending on which sizes of mating rectangular waveguides are desired. The RG-106/U design covers a frequency range of 53 per cent with a maximum VSWR of 1.08, while the other three designs each cover a slightly smaller frequency band with a VSWR not exceeding 1.05. Along with the experimental results obtained, an outline of the design method is given which can be used to design similar transformers between any compatible rectangular and double ridged waveguides.     

A Fixed-Tuned W-Band Waveguide SIS Mixer with 4.0-7.5 GHz IF

The design and performance of a fixed-tuned W-band SIS mixer with a wide band IF of 4.0-7.5 GHz is presented. Waveguide-to-stripline transition of the SIS mixer is designed using the lumped-gap-source port provided by HFSS^TM. Measured receiver noise temperature is less than 25 K in the frequency range of 95-120 GHz, with a minimum value of around 19 K achieved. Mixer noise temperature is determined to be about 8.5 K, which is around twice the quantum limit (i.e., 2hw/k). In spite of the high IF frequencies (f ₀ = 6 GHz), the performance of the SIS receiver is comparable or even superior to those of the best mechanically-tunable waveguide SIS receivers at low IF frequencies (f ₀ = 1.5 GHz). This result suggests that it is easy to design waveguide-to-stripline transitions without scale-model measurements.     

A 75 GHz to 115 GHz quasi-optical amplifier

A wideband quasi-optical amplifier employing two pyramidal back-to-back horns has been developed. Using a four-stage W-band low noise amplifier (LNA) designed and fabricated by Martin Marietta Laboratories, the quasi-optical amplifier gives a system gain greater than 11 dB from 86 GHz to 113 GHz without any low frequency oscillations. A peak system gain of 15.5 dB is measured at 102 GHz, and the measured noise figure of the system is 7.4 dB at 94 GHz. The quasi-optical amplifier design maintains the same polarization of the received and transmitted signal, provides better than -40 dB isolation, and can be fabricated monolithically at millimeter-wave frequencies     

A Combined 380 GHz Mixer/Doubler Circuit Based on Planar Schottky Diodes

The design, fabrication and test of a combined sub-millimeter wave mixer/doubler featuring a 380 GHz sub-harmonic mixer and a 190 GHz frequency doubler on a single quartz based microstrip circuit is reported in this letter. The integrated circuit uses separate flip-chip mounted planar Schottky diode components to perform the two functions. Measurements give best double sideband mixer noise temperatures of 1625 K at 372 GHz, and a corresponding mixer conversion loss of 8 dB. The measured fixed-tuned radio frequency bandwidth extends from 368 to 392 GHz, in good agreement with simulations. This work represents the first demonstration of a single substrate combined submillimeter wave mixer/doubler.     

梁式引线肖特基混频管几何参数优化设计

利用CAD技术找出平面结构梁式引线混频管几何图形最佳尺寸,满足在特定条件下管子总电容和总电阴为最小,以提高截止频率改善器件性能.研制出的混频管在35GHz时双边带噪声系数为4.8dB,接近预期结果.     

Noise Figure and Conversion Loss of the Schottky Barrier Mixer Diode

The theory of mixer operation is briefly reviewed and the results presented in graphical form convenient to the designer. In particular, the minimum noise figure, conversion loss, and the source and output impedances are plotted as functions of the pulse duty ratio of the diode current. Emphasis is placed on the pulse duty ratio as a more fundamental parameter for defining mixer operation than the magnitude of the diode voltage which is generally nonsinusoidal. It is shown that Schottky diode mixers should exhibit single sideband noise figures as low as 3 dB at X band when used in conjunction with 1.5 dB noise figure IF amplifiers, provided the diodes have cutoff frequencies higher than 500 GHz.     

High-Performance 94-GHz Single-Balanced Diode Mixer Using Disk-Shaped GaAs Schottky Diodes

We present a high-performance 94-GHz single-balanced monolithic millimeter-wave integrated-circuit (MMIC) mixer using the disk-shaped GaAs Schottky diodes grown on an n/$hbox{n}+$ epitaxial structure. Due to the superior characteristics of the GaAs diodes with high diode-to-diode uniformity, the mixer shows a conversion loss of 5.5 dB at 94 GHz, a 1-dB compression point $(P_{1 hbox{-}{rm dB}})$ of 5 dBm, and high local-oscillator to radio-frequency isolation above 30 dB in an RF frequency range of 91–97 GHz. To our knowledge, the fabricated mixer shows the best performance in terms of conversion loss at 94 GHz and $P_{1 hbox{-}{rm dB}}$ among the W-band MMIC mixers without amplifier circuits.      

A Broad-Band Dual-Mode Circular Waveguide Transducer

This paper describes a broad-band dual-mode waveguide transducer designed to couple two orthogonal TE/sub 11/ circular waveguide modes in separate rectangular waveguide ports. A compact, rugged, and economical junction has been developed to operate from 8600 mc to 9600 mc with a vswr of less than 1.15 at the rectangular port and a mode isolation of 50 db or greater. Developmental models are described to indicate the evolution from theory to the final model. Some problems encountered in attaining a small physical size are discussed in detail. The new junction has application to mode multiflexing, circular waveguide ferrite devices, circular polarization, and as a circular wave guide magic-T.     

大功率单路和功率合成式100~115GHz 肖特基平衡式二倍频器

研究了基于肖特基二极管的单路和功率合成式110 GHz大功率平衡式二倍频器。单路倍频器电路具有33%的峰值测试效率,且其工作带宽超过13.6%。另外,采用了不同的双路合成结构来实现两种不同的合成式110 GHz倍频器。该功率合成式倍频器在两只127 μm 厚的 ALN 基片上焊接了四个分立的肖特基二极管。在800 mW的驱动功率下,两种合成式倍频器都测得了大于200 mW的输出功率,证明了利用该合成式倍频结构可实现更高输出功率。     

Terahertz Sub-harmonic Mixer Using Discrete Schottky Diode for Planetary Science and Remote Sensing

Sub-harmonic mixers are the core element of terahertz room temperature, high spectral resolution heterodyne receivers for planetary science, and remote sensing. Here, terahertz sub-harmonic mixer up to 400 GHz using discrete Schottky diode is presented. Measured performance is in agreement with results from the linear and nonlinear co-simulations, and this methodology shows its practicability for the discrete planar GaAs Schottky diode-based terahertz core circuit design.