Photoluminescence of Au formed in 12CaO · 7Al2O3 single crystal by Au-implantation

Au⁺ ion implantation with fluences from 1 × 10¹⁴ to 3 × 10¹⁶ cm⁻² into 12CaO · 7Al₂O₃ (C12A7) single crystals was carried out at a sample temperature of 600 °C. The implanted sample with the fluence of 1 × 10¹⁵ cm⁻² exhibited photoluminescence (PL) bands peaking at 3.1 and 2.3 eV at 150 K when excited by He–Cd laser (325 nm). This was the first observation of PL from C12A7. These two PL bands are possibly due to intra-ionic transitions of an Au⁻ ion having the electronic configuration of 6s², judged from their similarities to those reported on Au⁻ ions in alkali halides. However, when the concentration of the implanted Au ions exceeded the theoretical maximum value of anions encaged in C12A7 (2.3 × 10²¹ cm⁻³), surface plasmon absorption appeared in the optical absorption spectrum, suggesting Au colloids were formed at such high fluences. These observations indicate that negative gold ions are formed in the cages of C12A7 by the Au⁺ implantation if an appropriate fluence is chosen.     

Optical and structural behaviour of Mn implanted sapphire

Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 × 10¹⁷ cm⁻². The samples were annealed at 1000 °C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 × 10¹⁶ cm⁻², as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl₂O₄. On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission.     

Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si0.8Ge0.2

The damage distributions induced by ultra low energy ion implantation (5 keV Si⁺) in both strained-Si/Si_0.8Ge_0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10¹³ to 1 × 10¹⁵ ions/cm². Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10¹⁴ to 4 × 10¹⁴ ions/cm² while the amorphous width is almost the same in both strained and normal Si.     

Optical absorption of metallic Zn nanoparticles in Zn ion implanted sapphire

Zn⁺ ion implantation (48 keV) was performed at room temperature up to a fluence of 5 × 10¹⁷ cm⁻² in -Al₂O₃ single crystals. X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy were utilized to characterize the optical properties, chemical charge states and the microstructure of embedded metallic Zn nanoparticles, respectively. XPS analysis indicated that implanted Zn ions are in the charge state of metallic Zn⁰. TEM analysis revealed the metallic Zn nanoparticles of 3–10 nm in the as-implanted sample at a fluence of 1 × 10¹⁷ cm⁻². A selected area electron diffraction (SAD) pattern indicates the random orientation of the Zn nanoparticles. A clear absorption peak appeared gradually in the optical absorption spectra of the as-implanted crystals, due to surface plasma resonance (SPR) of Zn nanoparticles. The wavelength of the absorption peak shifted from 260 nm to 285 nm with the increasing ion fluence, ascribed to the growth of Zn nanoparticles.     

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au³⁺ ions with fluences as high as 1 × 10¹⁶ ions/cm² and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.     

Release of nitrogen from SiOxNy films during RBS measurement

We have found that nitrogen atoms are released very rapidly from ultrathin SiO_xN_y films (2.6 nm) during RBS measurement with 500 keV He⁺ ions. The release behavior strongly depends on the preparation technique of the SiO_xN_y films. There is no release from the film prepared by thermal nitridation of SiO₂, while 80% of the nitrogen atoms are released from the film prepared by plasma nitridation at a fluence of 1×10¹⁶ cm⁻². The release cross-section for plasma SiO_xN_y films is of the order of 10⁻¹⁶ cm². This large cross-section cannot be explained by a simple recoil mechanism. The nitrogen release is also observed under irradiation with 5–10 keV electrons though the cross-section is of the order of 10⁻¹⁹ cm². These findings suggest that the observed nitrogen release is an electronic excitation induced process.     

Radiation effects on MgAl2O4–yttria stabilized ZrO2 composite material irradiated with Ne ions at high temperatures

Spinel (MgAl₂O₄) and yttria stabilized ZrO₂ (YSZ) are candidates for fuel materials for use in nuclear reactors and the optical and insulating materials for fusion reactors. In our previous studies, the amorphization of spinel under 60 keV Xe ion irradiation at RT was observed. On the other hand, amorphization could not be confirmed in YSZ single crystals under the same irradiation conditions. In the present study, the damage evolution process of polycrystalline spinel–YSZ composite materials has been studied by in situ TEM observation during ion irradiation. The irradiation was performed with 30 keV Ne⁺ ions at a flux of 5 × 10¹³ ions cm⁻² s⁻¹ at 923 K and 1473 K, respectively. The observed results revealed a clear difference in morphology of damage depending on irradiation temperature and crystal grains. In the irradiation at 923 K, defect clusters and bubbles were formed homogeneously in YSZ grains. On the other hand, at 1473 K, only bubble formation was observed. The bubbles grew remarkably with increasing ion fluence in both grains. Even though the growth of the bubbles was observed in both grains, the average diameter of grown bubbles in spinel grains was larger than those in YSZ ones. The bubbles tended to form along the grain boundary at both temperatures.     

Effects of Ag and Au ion implantation of lithium niobate

The optical effects of implantation of lithium niobate crystals with 100 keV Ag⁺ and 8 MeV Au³⁺ ions with fluences of 1 × 10¹⁷ ions/cm² have been investigated. Metal nanoparticle formation has been studied as a function of annealing temperature, and the resulting optical extinction curves have been simulated by the Mie theory in the small particle limit. Transmission electron microscopy (TEM) has provided direct evidence for the MNP sizes allowing comparison with the calculated results. A TEM study of an X-cut sample implanted with Ag⁺ ions show that the implanted region is partially amorphised. The differences in the temperature of Au colloid development in X- and Y-cut faces of the lithium niobate crystal are attributed to restoration of crystallinity as a result of annealing.     

Analysis of charge-exchanged neutral particles during IBW heating in the HT-7 tokamak

The charge-exchange neutral particles fluxes and energy distribution in IBW heated plasma were investigated in the HT-7 tokamak. The RF frequency was 30 MHz and with an injecting power up to 200 kW. It is observed that the plasma performance is obviously enhanced by IBW heating. The electron temperature was increased by 0.5 keV and the central line averaged electron density was doubled. The neutral particle fluxes of high-energy increased and the bulk ions were heated during IBW heating. The ion temperature was increased by 0.3 keV and the ion heating efficiency of (2–3) eV kW⁻¹ × 10¹³ cm⁻³ was achieved. The velocity distribution of charge-exchanged neutral particles appears to be Maxwellian without high-energy tail ions up to the maximum RF power.     

Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system

In the present study, a 500 Å thin Ag film was deposited by thermal evaporation on 5% HF etched Si(1 1 1) substrate at a chamber pressure of 8×10⁻⁶ mbar. The films were irradiated with 100 keV Ar⁺ ions at room temperature (RT) and at elevated temperatures to a fluence of 1×10¹⁶ cm⁻² at a flux of 5.55×10¹² ions/cm²/s. Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system was investigated using scanning electron microscopy (SEM). A percolation network pattern was observed when the film was irradiated at 200°C and 400°C. The fractal dimension of the percolated pattern was higher in the sample irradiated at 400°C compared to the one irradiated at 200°C. The percolation network is still observed in the film thermally annealed at 600°C with and without prior ion irradiation. The fractal dimension of the percolated pattern in the sample annealed at 600°C was lower than in the sample post-annealed (irradiated and then annealed) at 600°C. All these observations are explained in terms of self-diffusion of Ag atoms on the Si(1 1 1) substrate, inter-diffusion of Ag and Si and phase formations in Ag and Si due to Ar ion irradiation.     

Study of 160 MeV Ni ion irradiation effects on electrodeposited polypyrrole films

Conducting polymer polypyrrole thin films doped with LiCF₃SO₃, [CH₃(CH₂)₃]₄NBF₄ and [CH₃(CH₂)₃]₄NPF₆ have been electrodeposited potentiodynamically on ITO coated glass substrate. The polymer films are irradiated with 160 MeV Ni¹²⁺ ions at three different fluences of 5 × 10¹⁰, 5 × 10¹¹ and 3 × 10¹² ions cm⁻². An increase in dc conductivity of polypyrrole films from 100 S/cm to 170 S/cm after irradiation with highest fluence is observed in four-probe measurement. X-ray diffractogram shows increase in the crystallinity of the polypyrrole films upon SHI irradiation, which goes on increasing with the increase in fluence. Absorption intensity increase in the higher wavelength region is observed in the UV–Vis spectra. The SEM studies show that the cauliflower like flaky microstructure of the surface of polypyrrole films turns globular upon SHI irradiation at fluence 5 × 10¹¹ ions cm⁻² and becomes smooth and dense at the highest fluence used. The cyclic voltammetry studies exhibit that the redox properties of the polypyrrole films do not change much on SHI irradiation.     

Ion beam enhanced etching of LiNbO3

Single crystals of z- and x-cut LiNbO₃ were irradiated at room temperature and 15 K using He⁺- and Ar⁺-ions with energies of 40 and 350 keV and ion fluences between 5 × 10¹² and 5 × 10¹⁶ cm⁻². The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He⁺-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO₃ in the case of Ar⁺-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He⁺- and Ar⁺-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min⁻¹. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO₃ are discussed.     

Structural characterization of amorphous Fe–Si and its recrystallized layers

We have synthesized amorphous Fe–Si thin layers and investigated their microstructure using transmission electron microscopy (TEM). Si single crystals with (1 1 1) orientation were irradiated with 120 keV Fe⁺ ions to a fluence of 4.0 × 10¹⁷ cm⁻² at cryogenic temperature (120 K), followed by thermal annealing at 1073 K for 2 h. A continuous amorphous layer with a bilayered structure was formed on the topmost layer of the Si substrate in the as-implanted specimen: the upper layer was an amorphous Fe–Si, while the lower one was an amorphous Si. After annealing, the amorphous bilayer crystallized into a continuous β-FeSi₂ thin layer.     

Structural evolution in Fe ion implanted Si upon thermal annealing

We have performed high-dose Fe ion implantation into Si and characterized ion-beam-induced microstructures as well as annealing-induced ones using transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction (GIXRD). Single crystals of Si(1 0 0) substrate were irradiated at 623 K with 120 keV Fe⁺ ions to a fluence of 4 × 10¹⁷ cm⁻². The irradiated samples were then annealed in a vacuum furnace at temperatures ranging from 773 K to 1073 K. Cross-sectional TEM observations and GIXRD measurements revealed that a layered structure is formed in the as-implanted specimen with ε-FeSi, β-FeSi₂ and damaged Si, as component layers. A continuous β-FeSi₂ layer was formed on the topmost layer of the Si substrate after thermal annealing.     

Effects of 160 MeV Ni ion irradiation on polypyrrole conducting polymer electrode materials for all polymer redox supercapacitor

Electronically conducting polymers are suitable electrode materials for high performance supercapacitors, for their high specific capacitance and high dc conductivity in the charged state. Supercapacitors and batteries are energy storage and conversion systems which satisfies the requirements of high specific power and energy in a complementary way. Ion beam {energy > 1 MeV} irradiation on the polymer is a novel technique to enhance or alter the properties like conductivity, density, chain length and solubility.

Conducting polymer polypyrrole thin films doped with LiClO₄ are synthesized electrochemically on ITO coated glass substrate and are irradiated with 160 MeV Ni¹²⁺ ions at different fluence 5 × 10¹⁰, 5 × 10¹¹ and 3 × 10¹² ions cm⁻². Dc conductivity measurement of the irradiated films showed 50–60% increase in conductivity which is may be due to increase of carrier concentration in the polymer film as observed in UV–Vis spectroscopy and other effects like cross-linking of polymer chain, bond breaking and creation of defects sites. X-ray diffractogram study shows that the degree of crystallinity of polypyrrole increases in SHI irradiation and is proportionate to ion fluence. The capacitance of the irradiated films is lowered but the capacitance of the supercapacitors with irradiated films showed enhanced stability compared to the devices with unirradiated films while characterized for cycle life up to 10,000 cycles.     

Vacancy defects induced in the track region of 132 MeV C irradiated SiC

Positron annihilation lifetime spectroscopy (PALS) and electron paramagnetic resonance (EPR) have been used in this work to investigate vacancy defects induced in the track region of 132 MeV ¹²C irradiated silicon carbide. Irradiations have been performed at room temperature at a fluence of 2.5 × 10¹⁴ cm⁻² in N-low doped 6H–SiC and 3C–SiC monocrystals. Silicon monovacancies have been detected in both polytypes using EPR. Their charge state and concentration have been determined in the track and cascade region of the C⁺ ions. PALS measurements performed as a function of temperature have shown the presence of V_Si–C divacancies in the track region for both polytypes.     

Magnetic force microscopy studies on the magnetic ordering in organic materials induced by high-energy proton irradiation

In this study, ferromagnetic microstructures in highly oriented pyrolytic graphite and superparamagnetic spots in polyimide foils were created by 2.25 MeV proton microbeam irradiation and characterized using atomic and magnetic force microscopy. For this purpose, graphite samples were irradiated with cross-like patterns of 15 μm × 15 μm size using ion fluences in the range of (0.003–2.5) × 10¹⁸ cm⁻². The irradiated crosses showed strong magnetic signals and a complex domain structure in the magnetic images depending on the geometrical dimensions of the crosses. Furthermore, polyimide foils were irradiated with microspots and fluences in the range of (0.016–3.1) × 10¹⁹ cm⁻². Magnetic force microscopy shows very strong phase shifts in these irradiated areas.     

Carbon clustering in Si1−xCx formed by ion implantation

Silicon-carbon alloys were formed by multiple energy implantation of C⁺ ions in silicon and in Silicon on Sapphire (SOS). The ion fluence ranged between 5 × 10¹⁶ − 3 × 10¹⁷ ions/cm² and the energy between 10–30 keV in order to obtain constant carbon concentration into a depth of 100 nm. The carbon atomic fraction (x) was in the range 0.22–0.59 as tested by Rutherford backscattering spectrometry (RBS). Thermal annealing of the implanted films induced a transition from amorphous to a polycrystalline structure at temperatures above 850°C as detected by Infrared spectrometry (IR) in the wavenumber range 600–900 cm⁻¹. The optical energy gap and the intensity of the infrared signal after annealing at 1000°C depended on the film composition: they both increased linearly with carbon concentration reaching a maximum at the stoichiometric composition (x = 0.5). At higher carbon concentration the IR intensity saturated and the optical energy gap decreased from the maximum value of 2.2 to 1.8 eV. The behaviour at the high carbon content has been related to the formation of graphitic clusters as detected by Raman spectroscopy.     

Surface modification of Natural Rubber by ion implantation: Evidence for implant doping

Ion implantation is one of the most powerful and well-known technique for surface modification in polymers. Thin films of Natural Rubber were modified by the implantation of 60 keV N⁺ ions to the fluences of 10¹¹–10¹⁵ cm⁻². The electrical conductivity measurements of irradiated sample show 10 orders of magnitude compared to pristine state. Along with conductivity change there was a noticeable change in color to a dense shiny black for the most highly conducting films. The analysis of temperature dependence of dc electrical conductivity data reveals a three-dimensional variable range hopping mechanism. The microstructural evolution of the virgin and ion-beam modified samples was investigated by spectroscopic analysis such as UV/Vis & FTIR. These spectral studies gave evidence for the production of conjugate double bonds, which is a clear cut indication of implant doping. This is an important result since ion implantation usually does not produce doping in polymeric materials and only a few reports about the possibility of implant doping in polymers are available. The significant aspect of this study is that this confirms, the Natural Rubber’s potential to be used as a microelectronic device material. Also an attempt has been made to compare the conductivity enhancement in Natural Rubber by chemical and implant doping.     

A study of the blue photoluminescence emission from thermally-grown, Si-implanted SiO2 films after short-time annealing

Thermal SiO₂ films have been implanted with Si⁺ ions using double-energy implants (200 + 100 keV) at a substrate temperature of about −20°C to total doses in the range 1.6 × 10¹⁶−1.6 × 10¹⁷ cm⁻² followed by short-time thermal processing, in order to form a Si nanostructure capable of yielding blue photoluminescence (PL). The intensity and the peak position of the PL band have been investigated as a function of ion dose, manner of heat treatment, anneal time and anneal temperature. For the formation of blue PL emitting centres, optimum processing conditions in terms of excess Si concentration and overall thermal budget are mandatory. The nature of the observed blue emission is discussed.