1.3-μm InGaAsP-InP n-type modulation-doped strainedmultiquantum-well lasers

The use of n-type modulation doping to reduce the threshold current, the carrier lifetime, and the internal loss in 1.3-μm InGaAsP-InP strained multiquantum-well (MQW) lasers is experimentally demonstrated. The threshold current density, the carrier lifetime, and the internal loss were reduced by about 33%, 36%, and 28%, respectively, as compared with an undoped MQW laser. Moreover, the turn-on delay time in the n-type modulation-doped MQW lasers with a low-leakage buried heterostructure was reduced by about 35%. These results confirm the suitability of this type of laser for use in the basic structure of a monolithic laser array used as a light source for high-density parallel optical interconnection     

1.3-μm InAsP n-type modulation-doped MQW lasers grown bygas-source molecular beam epitaxy

The effect of n-type modulation doping as well as growth temperature on the threshold current density of 1.3-μm InAsP strained multiple-quantum-well (MQW) lasers grown by gas-source molecular beam epitaxy (GSMBE) was investigated for the first time. We have obtained threshold current density as low as 250 A/cm² for 1200-μm long devices. The threshold current density per well for infinite cavity length J_th/N_w∞ of 57 A/cm² was obtained for the optimum n-doping density (N_D=1×10¹⁸ cm^-3) and the optimum growth temperature (515°C for InP and 455°C for the SCH-MQW region), which is about 30% reduction as compared with that of undoped MQW lasers. A very low continuous-wave threshold current of 0.9 mA have been obtained at room temperature, which is the lowest ever reported for long-wavelength lasers using n-type modulation doping, and the lowest results grown by all kinds of MBE in the long-wavelength region. The differential gain was estimated by the measurement of relative intensity noise. No significant reduction of differential gain was observed for n-type MD-MQW lasers as compared with undoped MQW lasers. The carrier lifetime was also reduced by about 33% by using n-type MD-MQW lasers. Both reduction of the threshold current and the carrier lifetime lead to the reduction of the turn-on delay time by about 30%. The 1.3-μm InAsP strained MQW lasers using n-type modulation doping with very low power consumption and small turn-on delay is very attractive for laser array application in high-density parallel optical interconnection systems     

InGaN multiquantum-well-structure laser diodes with GaN-AlGaNmodulation-doped strained-layer superlattices

InGaN multiquantum-well-structure (MQW) laser diodes with Al_0.14Ga_0.86N-GaN modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN substrate was demonstrated to have a lifetime of more than 2300 h under the condition of room-temperature continuous-wave operation. The self-pulsation was observed with a frequency of 3.5 GHz. The relative intensity noise less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure laser diodes was estimated to be 3×10¹⁹/cm³ using a carrier lifetime of 1.8 ns     

Modeling noise and modulation performance of fiber grating externalcavity lasers

A detailed model is developed for analyzing fiber grating external cavity lasers for both static and small-signal modulation conditions. The chip and package parasitics and leakage current induced distortion are included. The composite system is solved analytically in the small-signal regime using a Volterra functional series expansion method. As an application of the model, a thorough analysis of the appearance of nulls close to the harmonics of the cavity resonance frequency in the noise and modulation spectra is given. We show that the appearance of these nulls can be explained using the interplay of amplitude and phase coupling between laser diode and external resonant cavity. A signal flow graph approach is introduced which identifies methods of minimizing the nulls     

Long-term wavelength stability of 1.55-μm tunable distributedBragg reflector lasers

To investigate physical mechanisms involved in long-term wavelength drift of tunable distributed Bragg reflector (DBR) laser, the evolution of the tuning characteristics as well as the Bragg section intensity modulation response of several DBR lasers have been simultaneously assessed by current injection in the Bragg section only. Current versus voltage I(V) characteristics under aging have also been recorded to compare the role of leakage current and nonradiative recombination defect evolution. The wavelength drift as well as the carrier lifetime of the tuning section varies following an exponential law A+Bexp(-t_A/τ) versus aging time t_A. The time constant τ is aging temperature and Bragg current dependant. The carrier lifetime decreases with time indicating a wavelength drift mainly due to nonradiative recombination defect increase. Modeling of the I_B(V) and λ_B(I_B) characteristics is presented, that fits nicely the experimental data. The exponential form of the wavelength drift is used to propose novel and adequate burning conditions of DBR lasers     

Analysis of the dynamic behavior and short-pulse modulation schemefor laterally coupled diode lasers

A theoretical investigation of the high-speed coupling phenomena of two laterally coupled diode lasers (LCDL) is presented. The analysis is centered on the spatiotemporal dynamics of the LCDL when coupling between emitters is varied, We have obtained the dynamic behavior of these devices showing high resonance frequencies beyond the well-known resonance frequency of a single diode laser. In this paper, we have presented a new modulation scheme by asymmetric switching of the injected current in both stripes, showing short optical output pulse modulation with a high repetition rate     

Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC bylow-pressure metal-organic vapor phase epitaxy

We studied the lasing mechanism of an InGaN-GaN-AlGaN multiquantum-well (MQW) laser diode by making various optical characterizations on the diode. Excitation power dependence of photoluminescence (PL) intensity was obtained to investigate the carrier recombination process of the laser. Surface emission and edge emission were compared by optical pumping to clarify where the lasing lines were located in relation to the absorption continuum. From the results, we demonstrate that lasing phenomena in our laser are dominated by free carriers. PL mapping was also taken on the same laser chip to examine the in-cavity bandgap inhomogeneity. We found a very large bandgap scattering of 100 meV. We also found that the wavelength distribution has a periodic modulation. We clarified that the various stimulated emission lines observed in our lasers are caused by the in-cavity spatial bandgap inhomogeneity of the InGaN MQW     

Sensitivity of proton implanted VCSELs to electrostatic dischargepulses

The sensitivity of vertical cavity surface-emitting lasers to electrostatic discharge (ESD) pulses has been investigated under human body model test conditions. Very similar degradation behavior has been found for vertical-cavity surface-emitting lasers (VCSELs) from two different manufacturers, both with proton-implantation for lateral current confinement. For all investigated devices we observed during forward bias stress that the optical degradation precedes the electrical degradation and the forward bias damage threshold pulse amplitudes were only slightly higher than the reverse bias values. At the initial stage of the VCSEL degradation, damage of the upper p-DBR mirror region has been observed without modification of the active layer. During the ESD tests we monitored the electrical and the optical parameters of the VCSELs and measured during forward bias stress additionally the optical emission transients. The optical transients during ESD pulsing enable a fast evaluation of the damage threshold and give also an indication of the time scale of the junction heating during ESD pulses     

Optoelectronic Oscillators Using Direct-Modulated Semiconductor Lasers Under Strong Optical Injection

In this paper, optoelectronic oscillators (OEOs) are demonstrated by using direct-modulated edge-emitting lasers under strong optical injection. The optically injection-locked OEO (OIL-OEO) enables a stable optoelectronic oscillation by converting an optical signal to an electrical signal through a long optical fiber loop. Low RF threshold gain of 7 dB for loop oscillation is attained by utilizing the cavity resonance amplification of an injection-locked semiconductor laser. We investigated both the open- and closed-loop characteristics of the OIL-OEO link by varying the injection locking parameters. Using this novel technique with optimized locking parameters, a 20-GHz RF signal with a phase noise of $-$123 dBc/Hz is successfully achieved without sophisticated frequency or temperature stabilization.      

High-pressure studies of recombination mechanisms in 1.3-/spl mu/m GaInNAs quantum-well lasers

The pressure dependence of the components of the recombination current at threshold in 1.3-/spl mu/m GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current with increasing pressure is associated with the unusual increase of the Auger-related nonradiative recombination current, while the defect-related monomolecular nonradiative recombination current is almost constant. Theoretical calculations show that the increase of the Auger current can be attributed to a large increase in the threshold carrier density with pressure, which is mainly due to the increase in the electron effective mass arising from the enhanced level-anticrossing between the GaInNAs conduction band and the nitrogen level.     

Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers

We present a comprehensive theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers. After introducing the 10-band k /spl middot/ p Hamiltonian which predicts transition energies observed experimentally, we employ it to investigate laser properties of ideal and real InGaAsN/GaAs laser devices. Our calculations show that the addition of N reduces the peak gain and differential gain at fixed carrier density, although the gain saturation value and the peak gain as a function of radiative current density are largely unchanged due to the incorporation of N. The gain characteristics are optimized by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness. The measured spontaneous emission and gain characteristics of real devices are well described by the theoretical model. Our analysis shows that the threshold current is dominated by nonradiative, defect-related recombination. Elimination of these losses would enable laser characteristics comparable with the best InGaAsP/InP-based lasers with the added advantages provided by the GaAs system that are important for vertical integration.     

Human-Body-Model Electrostatic-Discharge and Electrical-Overstress Studies of Buried-Heterostructure Semiconductor Lasers

Optoelectronic components such as laser diodes, light-emitting diodes, and photodiodes are susceptible to electrostatic discharge (ESD) and electrical overstress (EOS). Human-body model (HBM) is the most widely adopted method for the characterization of the ESD performance. In this paper, we report a comprehensive study of the ESD and EOS characteristics of buried-heterostructure (BH) semiconductor lasers using the HBM. Threshold current, optical power, optical spectrum, and reverse-bias current are characterized during the ESD study. We show that the ESD-failure thresholds depend upon the polarity. The chip can sustain the highest ESD stress under forward bias and the lowest one under forward/reverse bias. We also show that the BH lasers exhibit two types of ESD-degradation behavior. The soft degradation is characterized by a gradual increase in the threshold current, whereas the hard degradation is identified by a sudden jump in the threshold current during the ESD voltage ramp. The ESD-degradation behavior seems to be influenced by the cavity length. The failure-analysis results show that about 27% of the ESD failure is related to facet damage. The damage regions occur at the upper laser mesa structure and form preferentially on the bond-pad side. The preferential formation of the facet damage is suggestive of current-crowding effect. We have also found that the ESD-degradation behavior is a function of the facet damage. The soft-degradation failure shows a stronger correlation with the facet damage than the hard-degradation one. Finally, we demonstrate that the ESD performance of the laser can be improved by adding a protection diode.     

The temperature dependence of 1.3- and 1.5-μm compressivelystrained InGaAs(P) MQW semiconductor lasers

We have studied experimentally and theoretically the spontaneous emission from 1.3- and 1.5-μm compressively strained InGaAsP multiple-quantum-well lasers in the temperature range 90-400 K to determine the variation of carrier density n with current I up to threshold. We find that the current contributing to spontaneous emission at threshold I_Rad is always well behaved and has a characteristic temperature T₀ (I_Rad)≈T, as predicted by simple theory. This implies that the carrier density at threshold is also proportional to temperature. Below a breakpoint temperature T_B, we find I α n^Z, where Z=2. And the total current at threshold I_th also has a characteristic temperature T₀ (I_th)≈T, showing that the current is dominated by radiative transitions right up to threshold. Above T_B, Z increases steadily to Z≈3 and T₀ (I_th) decreases to a value less than T/3. This behavior is explained in terms of the onset of Auger recombination above T_B; a conclusion supported by measurements of the pressure dependence of I_th. From our results, we estimate that, at 300 K, Auger recombination accounts for 50% of I_th in the 1.3-μm laser and 80% of I_th in the 1.5-μm laser. Measurements of the spontaneous emission and differential efficiency indicate that a combination of increased optical losses and carrier overflow into the barrier and separate confinement heterostructure regions may further degrade T₀ (I_th) above room temperature     

Lateral carrier confinement in miniature lasers using quantum dots

Although quantum-dot (QD) lasers are yet to reach their promise of ultralow threshold and high characteristic temperature because of QD size nonuniformity, we have found that they can be used to effectively limit the lateral diffusion of carriers in the active region, enabling the scaling of lasers to small lateral dimensions. Although oxide apertures continue to enable improved performance in vertical-cavity surface-emitting lasers (VCSEL's) by reducing optical losses and current spreading, lateral carrier losses remain uncontrolled. We investigate QD active material in which lateral diffusion is intentionally reduced. Cathodoluminescence (CL) results demonstrate reduced lateral diffusion in the material with which we expect 50% reduction in the threshold current for 1-μm-wide edge-emitters or 5-μm-diameter VCSEL's. We have made QD stripe lasers with submicrometer widths that lase from the ground state and have quantified the lateral carrier reduction in the QD laser active region. We show empirically that the degree of lateral carrier confinement is dependent on the quantum state from which lasing occurs and demonstrate 63% reduction in lateral carrier leakage for the ground-state lasers. Finally, the scaling of threshold current in QD VCSEL's is compared with that of quantum-well (QW) VCSEL's by numerical modeling for future design considerations     

Nonlinear gain coefficients in semiconductor quantum-well lasers:effects of carrier diffusion, capture, and escape

Effective nonlinear gain coefficients due to the effects of carrier diffusion, capture, and escape are derived from the carrier transport equations. The quantum capture and escape processes between the confined states and the unconfined states are calculated from first principles by evaluating the carrier-polar longitudinal optical phonon interactions. The dc and ac capture times and escape times are derived from evaluating the net capture current of carriers. The differences in capture and escape times between dc and ac operating conditions are numerically investigated. We find that both dc and ac escape times are strongly dependent on the quantum well structure. This differs from the dc and ac capture times that are not sensitive to the quantum well structure. We also find that the dc escape time predicted by the classical thermionic emission theory will no longer be valid for narrow or shallow quantum wells. We show that both dc and ac capture and escape time ratios will increase as the carrier temperature and the carrier density in the quantum well increase. Therefore, we suggest that the possible cause of the resonant frequency degradation and dramatic increase in the damping rate results from the increase of the ac capture to escape time ratio by the effects of carrier heating. Two theoretical models (2N and 3N models) were used to study the effects of carrier diffusion-capture-escape on the modulation response of quantum-well lasers and a distributed model of carrier transport in quantum-well lasers is proposed. Their implications in designing high-speed quantum-well lasers are discussed     

Modeling of noise and distortion associated with ultra‐high‐speed modulation of VCSEL with slow‐light feedback

This paper presents numerical modeling on the noise properties and signal distortion associated with millimeter‐frequency modulation of vertical‐cavity surface‐emitting laser (VCSEL) under with a transverse‐coupled cavity. The study is based on a time‐delay rate equation model that takes into account the multiple round trips in the feedback cavity and the optical loss and phase delay in each round trip. Strong slow‐light feedback is found to boost the modulation bandwidth to frequencies approaching 70 GHz and induce resonance modulation due to photon–photon resonance (PPR) over passbands centered on frequencies reaching 90 GHz. We show that the relative intensity noise of the VCSEL with resonance modulation is enhanced when the noise frequency approaches the corresponding PPR frequency VCSEL. The same effect applies for the VCSEL with extended carrier‐photon resonance (CPR) at the CPR frequency. The low‐frequency part is characterized by flat (white) noise of level nearly equal to −140 dB/Hz. The second‐harmonic distortion (2HD) values are smaller than −10 dB under small‐signal modulation and increase to lower than −5 dB when the modulation index becomes 0.3. Copyright © 2015 John Wiley & Sons, Ltd.     

Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers andlaser arrays grown on nonplanar substrates

High performance buried heterostructure InGaAs-GaAs-AlGaAs quantum-well lasers and laser arrays with tight spatial confinement of the electrical current and the optical fields have been fabricated by metalorganic chemical vapor deposition. The lasers ace fabricated in a single growth step, using nonplanar substrates as a template for the active region definition. CW room temperature threshold currents, as low as 0.5 mA and 0.6 mA, are obtained for as-cleaved double and single quantum-well lasers, respectively. External quantum efficiencies exceeding 80% are obtained in the same devices. High-reflectivity facet-coated lasers have room temperature CW threshold currents as low as 0.145 mA with 10% external quantum efficiency. Lasers made by this technique have high yield and uniformity, and are suitable for low threshold array applications     

Modulation and free-space link characteristics of monolithicallyintegrated vertical-cavity lasers and photodetectors with microlenses

We present temperature, modulation, and free-space link characteristics of monolithically integrated vertical-cavity lasers (VCLs) and resonant photodetectors. The devices have been integrated using a novel structure that makes it possible to fabricate devices with through-the-substrate emission and detection. Taking advantage of the substrate emitting/detecting architecture, we monolithically integrate microlenses on the substrate side of the devices and flip-chip bond arrays without via processes or substrate removal. Low-threshold high-efficiency VCLs exhibit maximum small-signal modulation bandwidths, which are limited by parasitics, of ~9.5 GHz at 20°C and ~8.4 GHz at 70°C. The VCLs have the lowest reported bias currents required to reach bandwidths of up to ~8 GHz. A free-space optical link is demonstrated with flip-chip-bonded arrays of microlensed, monolithically integrated VCLs and detectors. The link is found to be tolerant to temperature differences of ±75°C between the VCL and detector, with error free (BER<10^-12) data transmission demonstrated in each case     

Unidirectionally coupled synchronization of optically injected semiconductor lasers

Three different synchronization scenarios, namely identical chaos synchronization, chaotic driven oscillation, and chaotic optical modulation, are experimentally observed for the chaotic optical fields generated by optically injected semiconductor lasers that are unidirectionally coupled. In this fully optical system, the channel signal is different from the output field of the transmitter laser by an additional injection optical field delivered by a master laser. In the case of identical chaos synchronization, the output field of the receiver is synchronized, and frequency locked, to that of the transmitter but is not synchronized to the channel signal. In chaotic driven oscillation, the output field of the receiver is synchronized, and frequency locked, to the channel signal but is not synchronized to the output field of the transmitter. In chaotic optical modulation, the output field of the receiver is synchronized, but not frequency locked, only to the channel signal. These three different synchronization scenarios are identified in the same optical-injection system under different operating conditions.     

Large- and small-signal dynamic behavior of high-speeddual-polarization quantum-well semiconductor lasers

The transmission-line laser model is modified to model both transverse-electric (TE) and transverse-magnetic (TM) modes so that it is applicable to quantum-well (QW) dual-polarization lasers and polarization-insensitive semiconductor optical amplifiers (SOAs). The effects of carrier transport are also included in the model. The resulting dual-polarization transmission-line laser model is used to study large- and small-signal dynamic behavior of dual-polarization lasers. We find from large-signal simulations that the polarization asymmetry (ratio of the transverse-modal powers) varies on a nanosecond time scale in dual-polarization single-quantum-well (SQW) devices. We show that unequal transverse-modal differential gains and gain nonlinearities are responsible for this temporal polarization asymmetry. In addition, our numerical simulations show that the steady-state polarization asymmetry is a strong function of the gain nonlinearity. Small-signal dynamic simulations show that the modulation response of the polarization-unresolved output of dual-polarization SQW lasers follows that of the transverse mode with the lowest gain nonlinearity coefficient, regardless of the transverse-modal differential gains