C_(60)/花生酸混合LB膜 Ⅰ.LB膜的X射线衍射和分子排列模型

制备了纯C60和C60／AA的混合LB膜。用X－射线衍射详细研究了它们的周期结构,表明C60分子在C60／AA混合LB膜中不是顶在花生酸疏水端头,而是包埋在花生酸分子之间。由此提出了一个新的分子排列模型。     

C60／花生酸混合LB膜I.LB膜的X射线衍射和分子排列模型

制备了纯Ｃ６０和Ｃ６０／ＡＡ的混合ＬＢ膜。用Ｘ－射线衍射详细研究了它们的周期结构，表明Ｃ６０分子在Ｃ６０／ＡＡ混合ＬＢ膜中不是顶在花生酸疏水端头，而是包埋在花生酸分子之间，由此提出了一个新的分子排列模型。     

UHMWPE凝胶结晶膜结晶形态的小角X射线衍射研究

由准稀溶液速冷凝胶（冻胶）化结晶方法制备出超高分子量聚乙烯（ＵＨＭＷＰＥ）膜。对不同成膜浓度条件，以及再经不同温度（室温～１３０℃）热处理后所获得的膜，用小角Ｘ射线衍射方法及广角Ｘ射线衍射仪对称反射几何布置，观测了它们的片晶层积状结构及其形态的变化。结果表明，这种Ｃ轴垂直于膜面的片晶层积状形态结构与初始成膜浓度有关。发现在可达最大拉伸比的成膜浓度范围（０．４～０．５ｇ／１００ｍｌ）内，膜中片晶排列     

六角相GaN外延膜的高分辨X射线衍射分析研究

通过实例介绍运用高分辨X射线衍射分析技术对GaN异质外延薄膜材料的微结构进行研究，希望能获得不同缓冲层生长与优化工艺以及结构模型对其结构特性参数影响方面的信息，为GaN材料和器件制备者提供有用的参考。     

C_(60)/花生酸混合LB膜Ⅲ.LB膜的酸、碱稳定性

LB膜的环境稳定性是它们实际应用中常见的问题。实验发现盐酸蒸汽和氨蒸汽对C60 /AA混合LB膜的周期结构都有影响 ,使衍射峰的强度逐步减弱和等同周期有所减小。酸碱处理甚至会在C60 /AA混合LB膜中造成C60 微晶的形成。     

Co—Cr合金膜的X射线线形分析

利用近池数法对Ｃｏ－Ｃｒ合金薄膜的衍射线性形进行分析，并提出用“三线法”确定衍射线的函数类型及其积分宽度，由此可计算薄膜的晶粒尺寸和微观应变。理论计算和实验表明，“三线 法”结合近似函数在线形分析方面是简便，可靠的。通过分析Ｃｏ－Ｃｒ膜在不同工艺条件下（膜厚、Ａｒ工作气体压强和负偏压）的衍射线线形，发现衍射线的物理展宽（即有效晶粒尺寸的减小）是粒取向度的下降是相应的，晶粒取向度的下降与结构缺陷密度     

Co-Cr合金膜的X射线线形分析

利用近似函数法对Co－Cr合金薄膜的衍射线线形进行分析，并提出用“三线法”确定衍射线的函数类型及其积分宽度，由此可计算薄膜的晶粒尺寸和微观应变。理论计算和实验表明，“三线法”结合近似函数法在线形分析方面是简便、可靠的。通过分析Co－Cr膜在不同工艺条件下（膜厚、Ar工作气体压强和负偏压）的衍射线线形，发现衍射线的物理展宽（即有效晶粒尺寸的减小）与晶粒取向度的下降是相对应的。晶粒取向度的下降与结构缺陷密度的增大有关。负偏压溅射时由于Ar原子残留在膜内引起晶格膨胀，从而使微观应变有较大增加。     

PZSN系压电陶瓷X射线衍射分析

用Ｘ射线衍射法研究了ｐｂ「Ｚｎ１／３Ｎｂ２／３）（Ｓｎ１／３Ｎｂ２／３）」（ＺｒＴｉ）Ｏ３体系压电陶瓷的结构，探讨了微量元素掺杂对材料晶胞参数的影响，以及电极化前后的状况。结果表明：样品均为四方相钙钛矿型结构；掺杂微量元素后晶胞参数略有变化；极化使畴区发生９０°旋转，微应变增加，表现为晶胞中晶面的峰强反转。     

离子束辅助沉积制备TaN薄膜的X射线衍射分析

利用离子束辅助沉积技术制备TaN薄膜，并对其进行X射线衍射分析。掠入射的X射线衍射分析得出：离子束辅助沉积制备的TaN薄膜是面心立方结构，晶格常数a为0．4405nm。根据X射线衍射分析，用屈服强度表征的TaN薄膜的显微硬度为16～20GPa，与文献上报道的显微硬度值接近。离子束辅助沉积制备的TaN薄膜宏观内应力较小，且都为压应力。晶粒尺寸大约在10nm左右，随着注入离子能量的增加，薄膜晶粒尺寸有长大的趋势。     

铜薄膜微结构的X射线衍射线形分析

首先采用真空蒸镀法制备了不同厚度的铜薄膜,并对薄膜进行了退火处理;然后用X射线衍射仪测定铜薄膜的衍射谱,最后采用线形分析法对衍射谱进行计算,得到了不同厚度铜薄膜退火前后的晶粒尺寸和微应变。结果表明:真空蒸镀铜薄膜晶粒尺寸随薄膜厚度的增加而增大,微应变随薄膜厚度的增加而减小;退火处理后薄膜晶粒明显长大,薄膜微应变在退火处理后明显减小。     

C_(60)/花生酸混合LB膜Ⅱ.LB膜的表征和AFM形貌观察

用紫外可见吸收光谱 (UV -vis)、X光电子能谱(XPS)和原子力显微镜 (AFM)对C60 /AA混合LB膜中C60 分子在LB膜中的排列作了观察 ,进一步证明了我们在第一报中确认的在混合LB膜中C60 分子不是顶在花生酸疏水部分的端头 ,而是嵌埋在花生酸分子之间。     

X-Ray and Neutron Diffraction Studies on Thermal Parameters of Thalous Bromide

Thermal parameters of TIBr were determined using both X-ray and neutron diffraction techniques. The data was analysed by Rietveld profile refinement procedure. From the neutron diffraction data, due to weak odd-order reflections, it was not possible to determine the individual thermal parameters. The X-ray diffraction measurements yielded BT1=0.296(5)nm2 and BBr=0.162(5) nm2. The overall isotropic value, J9 was 0.252(7) nm2 which is in good agreement with B=0.230(8) nm2 obtained from present neutron diffraction measurements. The present values are also in good agreement with theoretical estimates obtained from the shell models.     

Study of a Pure-Ge/Si Short-Period Superlattice by X-Ray Double Crystal Diffraction

Pure-Ge/Si short-period superlattice (SPS) samples consisting of 1.5-monolayer Ge and a 1.4- to 3.8-nm-thick Si layer grown by gas source molecular beam epitaxy (GS-MBE) were studied by double-crystal x-ray diffraction. For SPS with a Si layer less than 2.4 nm, the satellite peak caused by the SPS structure in the rocking curve is quite broad, and no fine structure is found, indicating that there exists dislocation and waviness epilayers in the SPS. For SPS with a thick Si layer, the rocking curve is sharp and fine interference structures exist, indicating smooth epilayers in the SPS. It is found that both broad and sharp peaks exist but without fine structure in the rocking curves for SPS samples with a Si layer thickness (L _Si) in the range of 2.1–2.9 nm, which is the range in which an abnormal photoluminescence band appears in photoluminescence spectra. This result strongly supports H. Sunamura's suggestion that the abnormal photoluminescence band is caused by waviness formation of the epilayer due to vertical correlation of thickness fluctuations by the local strain field.     

用于X射线光刻掩模的纳米金刚石膜成核研究

介绍了金刚石膜在下一代X射线光刻掩模中应用的必要性;通过调节衬底温度,改变生长时间、控制甲烷浓度等工艺措施,实验研究了不同参数对成核密度及成核质量的影响,获得了高密度形核的样品;对形核后的预生长期进行了工艺优化,有效地控制了核岛的优势生长,总结出了一套优化的形核方案,即甲烷浓度4％,衬底温度700℃,形核时间14min;这套工艺不仅改善了自支撑金刚石薄膜窗口的光学性能,还有效地降低了膜的内应力。     

X-Ray Diffraction Study of Correlated Electron System at Low Temperatures

By using an ultra-low temperature X-ray diffractometer, we studied low temperature phase transitions of several materials. These phase transitions are classified into a ferro quadrupole ordered phase, that is, Jahn–Teller distortion (TmVO, ZnCrO), an antiferro quadrupole ordered phase (CeB, PrPb), and a superconducrivity (MgB). We also investigated unknown phases, such as the low temperature phase in PrPtBi and the 4th phase in CeLaB. Our low temperature X-ray measurement gives rise to a fruitful information about the phase transition. Not only a whole profile of the reflection peaks, which can be analyzed by the Rietveld method, we also made the precise measurement of the temperature dependence of the integrated intensity of the reflection peak, the full width at half maximum, and the lattice spacing for some fixed reflections. The temperature dependence of the integrated intensity (I.I.) can be expressed by the Debye–Waller expression. At low temperatures, the change of the phonon frequency can be obtained from the I.I. through the Debye–Waller factor. In MgB we observed the hardening of the phonon and the softening of phonon above and below the superconducting transition temperature, respsctively. This result suggests the relevant mechanisim of superconductivity in MgB is the electron–phonon interaction. From the precise measurement of the lattice constant, we found the negative thermal expansion at low temperatures in many correlated electron system. This negative thermal expansion can be explained by the Fermi liquid theory by Misawa.     

X-Ray Diffraction and Electron Microscopy in the Polymorphism Study of Ondansetron Hydrochloride

Using different techniques, we studied the possible formation of ondansetron polymorphs. Ondansetron is a carbazol antiemetic that acts as a competitive, selective inhibitor of 5-HT₃ serotonin receptors. The polymorphs were determined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results suggest that the compounds are not true crystallographic polymorphs, but instead are the product of physical structural changes in the drug, which would be of interest pharmaceutically.