CA认证在组织机构代码管理中的应用

针对组织机构代码管理中的若干安全问题,分析了CA认证的重要性,提出了基于CA安全技术的解决方案:采用数字加密技术保证数据的传输安全;采用数字签名技术进行身份认证;应用CA证书进行用户系统登陆的身份识别。通过建模和存储用户身份的数字证书及私钥文件的UsbKey,实现操作方便、响应迅速的代码网上业务。     

PKI技术在电子政务中的应用

电子政务的网络应用系统必然涉及到国家和本单位的秘密,涉及到多种敏感数据和各类重要文件,因此对安全保障系统有非常高的要求。例如,需要采用高安全度的身份认证手段,对网络上来访的用户进行认证;需要采取加密通信技术来保障通信数据不被窃取;需要解决网络化办公时的文件批阅和签发问题;需要采用专门的技术来保护个人计算机及其所存放文件的安全等等。近年发展起来的PKI公共密钥安全体系结合了多种密码技术,提供了数字证书、密钥安全交换和数字签名等方法,为身份认证、安全通信、保证数据的完整性和抗否认性等,提供了高安全水平的解决方…     

保密电子邮件传递过程中的法律关系研究

保密电子邮件通信是指基于SPKM机制(简单公钥机制),采用Client/Server结构,通过安全邮件服务器和安全邮件客户端软件实现电子邮件通信的信息传输模式。其运作原理是:利用公开密钥机制PKI和数字证书来实现通信双方的单向或双向身份认证;通过协商HASH算法、对称算法、对称密钥来保证传输数据的机密性和完整性;利用数字签名来保证数据的有效性和防抵赖性;运用序列号或时间戳等措施增强协议的抗攻击性。假设发送     

对企业信息的安全加密

PKI(公共密钥体系)使用一对密钥包括公开密钥(PublicKey)和私有密钥(Public Key),能够使世界上任何地方的两个人通过因特网进行信息的安全加密和身份认证。同时,在信息的交换过程中,PKI技术能够确保信息的内容不被第三方读取和篡改,以及验证通信双方身份的真实性。公开密钥由认证中心保存并发布,私有密钥由使用者秘密保存并要防止泄漏。发送方可以使用接收方的公开密钥对信息进行加密,以保证只有接收方才能打开文件。另外,文件还可以用发送方的私有密钥加密起到数字签名的作用,用以确定接收方的身份和防止日后的否认。随着越来越多的商家意识到了PKI的这一忧势,安全存储这一私钥越发显得必要。传统存储私钥的手段存在漏洞,但智能卡可提供更方便与安全的方式实现这一存储目的。     

基于Java的电子公文加密传输

如何保证政府电子政务的安全性是实施电子政务必须首先要解决的问题。介绍了信息安全领域中的公开密钥加密体系和数字签名以及Java的安全机制;针对目前办公自动化系统中电子公文传输普遍存在的安全问题,利用Java中的安全软件包实现了对电子公文的数字签名,从而保证了在政府部门内部数据传输的可认证性、完整性和不可抵赖性。     

数字认证技术及其在电子政务系统中的应用

介绍了计算机网络安全中的数字认证技术，并阐述了数字认证技术的原理和功能，以及其在电子政务系统中的一些具体应用。作为解决网络信息安全问题的开放性新技术，通过运用网络加密、电子签名以及公开密钥等电子技术手段，对网上交易主体的电子身份进行审核、公证后颁发数字证书，从而保证网络交易的安全可靠性。     

统一身份认证平台技术开发与应用

通过介绍信息系统中普遍存在的信息安全问题和普遍使用的身份认证技术,阐述了能够解决当前信息安全问题的、最先进的统一身份认证平台技术。它是基于动态令牌能够实现全程通信加密的、适用于对称和非对称加密算法的身份认证平台,并对非对称加密算法的数字签名加解密的完整过程用算法模型予以说明。平台在多个领域的实施效果不错,经检测是目前国内加密效果最好的统一身份认征安全管理平台。     

密码技术

密码技术是实现信息安全(Security)的基本要素。它的重要性越来越被人们所认识。本文以基本原理为中心对密码技术加以解说,并从现代观点对公用密钥加密方式、公开密钥加密方式、公开密钥分配方式、公开密钥数字签名方式以及置乱方式等几种加密体制加以整理和介绍。     

数字加密安全技术研究进展及应用

本文通过梳理数字信息安全技术国内外研究文献,通过分析数字加密安全技术类型及重要意义,然后分析身份认证技术与数字签名,最后分析入侵检测安全技术研究进展及应用。为相关的数字安全技术理论与实践工作者提供基本的参考。     

信息安全技术在航天企业无纸化办公中的应用

文章从三个角度探讨信息安全技术在无纸化办公系统中的应用,包括基于短信认证的身份认证、基于时间戳的数字签名技术和基于加密策略的文件传输存储。通过一系列信息安全技术的应用,保证员工身份的可靠性、文档信息的完整性和不可抵赖性,防止电子信息数据的伪造和篡改,为企业提供一个安全可靠的信息化办公平台。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.