Use of Transmission Electron Microscopy for the Characterization of Rapid Thermally Annealed, Solution-Gel, Lead Zirconate Titanate Films

The microstructure and preferred orientations of rapid thermally annealed Pb(Zr_0.53,Ti_0.47)O₃ films, deposited on Pt/Ti/SiO₂/Si electrode/substrates by solution-gel spinning, have been investigated using analytical and high-resolution electron microscopy and X-ray diffraction. The temperature of pyrolysis of the PZT films was found to influence the preferred orientation of the film: lower temperatures (350°C) favored a (111) orientation, whereas higher temperatures (420°C) favored a (100) orientation. Excess Pb was used to control the A-site stoichiometry of the film particularly at the film surface where Pb-deficient crystals could often be observed. The absence of these crystals was shown to be correlated with an improvement in the dielectric response.     

Synthesis of Highly Oriented Lead Zirconate–Lead Titanate Film Using Metallo-organics

Crack-free Pb(Zr,Ti)O₃ (PZT) thin films with preferred orientation were prepared successfully on MgO (100), SrTiO₃ (100), and Pt/Ti/SiO₂/Si substrates from metal alkoxide solutions. Calcination of precursor films in a H₂O─-O₂ gas mixture was found to be effective not only for low-temperature crystallization of perovskite PZT, but also for obtaining the preferred orientation of PZT films. Single-phase PZT films with high preferred orientation were synthesized on MgO (100) and Pt/Ti/SiO₂/Si substrates at 550° and 600°C for 2 h, respectively. The PZT film on the Pt/Ti/SiO₂/Si substrate showed a permittivity of 520, tan δ of 0.03, a remanent polarization of 24 μC/cm², and a coercive field of 54 kV/cm.     

Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3-0.5PbTiO3 Thin Films by Chemical Solution Deposition

0.5Pb(Mg_1/3Nb_2/3)O₃-0.5PbTiO₃ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by varying the film formation procedures and heating processes. Depending on the multilayer film formation and appropriate heating process, the films were grown with a preferential orientation. The films showed a (100)-preferred orientation and large grain-size distribution when they were directly heat-treated after deposition of amorphous layers. The films showed a (111)-preferred orientation and small grain-size distribution when formed layer-by-layer or directly heating amorphous thin films with a perovskite seed layer. These results were explained by the effect of a seed layer. Saturation polarization of the (111)-preferred films was ∼35 µC/cm², which was somewhat higher than that of the (100)-preferred film. In contrast, the dielectric constant of the (100)-preferred film was ∼1600, which was larger than that of the (111)-preferred film.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties

Processing effects on the dielectric properties of sol–gel-derived PbZrO₃–PbTiO₃ (PZT) films integrated onto Pt/Ti/SiO₂//Si substrates are reported. Sol–gel synthesis and deposition conditions were designed to produce films of varying thickness (95–500 nm) with consistent chemical composition (Pb (Zr_0.53Ti_0.47)O₃), phase content (perovskite), grain size (∼110 nm), crystallographic orientation (nominally (111) fiber textured), and measured residual stress. The Stoney method, using laser reflectance to determine wafer curvature, derived biaxial tensile stress values of 150 and 180 MPa for PZT films after a baseline correction for electrode interactions during thermal processing was employed. The PZT films were of high dielectric quality, with low losses and negligible dispersion. Calculated values of dielectric constant ( ̄ ') were found to decrease from 960 to 600 with decreasing film thickness. A series-capacitor model successfully recovered a room-temperature K ₁' for the PZT (1,170) in good agreement with bulk reports but was unable to reproduce the expected dielectric anomaly near 380°C. This discrepancy and the resulting diffuse phase transformation were attributed to the biaxial tensile stress present in the PZT films.     

Preparation of Lead Zirconate Titanate Thin Films Derived by Hybrid Processing: Sol-Gel Method and Laser Ablation

Thin films of Pb(Zr_0.52Ti_0.48)O₃ (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO₂/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P - E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO₂/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.     

Highly Oriented (Zr0.7Sn0.3)TiO4 Thin Films Grown by rf Magnetron Sputtering

Thin films of (Zr_0.7Sn_0.3) TiO₄ on Si(100) were prepared by rf magnetron sputtering in the present study. Films of a highly preferred [020] orientation, as demonstrated by X-ray diffraction and transmission electron microscopic examinations, were grown successfully on a Si substrate with in situ postannealing at 700°C. The chemical composition of the films, measured by secondary ion mass spectroscopy, exhibited a uniform concentration distribution for all species. A study by X-ray photoelectron spectroscopy further revealed some firm evidence of a molecular orbital that affected the chemical structure. The dielectric constants of 400-nm-thick (Zr_0.7Sn_0.3)TiO₄ films in the present study were >18 for the films with a preferred orientation and ~11 for polycrystalline films.     

Preparation of Tetragonal Barium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal Method

Tetragonal BaTiO₃ thin films were prepared directly on Ti metal substrates in Ba(OH)₂ solutions by a hydrothermal method at temperatures 400° to 800°C for 5 to 240 min. The film thickness estimated from weight gain of Ti plate was in the range from 0.5 to 2.5 μm, and it increased with increasing treatment temperature, treatment time, and Ba(OH)₂ concentration. Rectangular crystals having {100} and {001} faces grew idiomorphically with approximate crystal size of 0.3 to 2.0 μm. The tetragonality of the BaTiO₃ films became apparent when the average crystal size exceeded about 1 μm. Lattice parameters of the films were a = 3.994 Å, c = 4.035 Å, and c/a = 1.010. The films formed above 600°C had preferred orientation showing stronger XRD peaks of h 00 and 00 l than the other peaks.     

Oriented Lead Titanate Film Growth at Lower Temperatures by the Sol-Gel Method on Particle-Seeded Substrates

An approach to fabricate lead titanate (PbTiO₃) films with preferred orientation on arbitrary substrates by a sol-gel method was developed. To ensure a preferred crystallographic orientation on the substrates with different crystal structure, well-defined platelet PbTiO₃ particles were used as seeds. Because the basal plane of the platelet-shaped particles was the (001) plane, the particles aligned with the c-axis perpendicular to the substrates. During crystallization of the sol-gel PbTiO₃ films on the particle-seeded substrate, preferential nucleation occurred on seeded particles with the same crystallographic orientation as the particles at a much lower temperature. In the current study, (100) and (001) textured PbTiO₃ films have been produced on various substrate materials such as silicon, silicate glass, indium tin oxide (ITO) glass, and titanium metal at temperatures as low as 275°C. The microstructure of the films was examined by scanning electron microscopy and atomic force microscopy. Limited ferroelectric properties also were determined, to underscore the preferred orientation that was produced in these materials.     

Electrical and Pyroelectric Properties of Highly (001)-Oriented (Pb0.76Ca0.24)TiO3 Thin Films Grown by a Sol–Gel Process

Highly (001)-oriented (Pb_0.76Ca_0.24)TiO₃ (PCT) thin films were grown on Pt/Ti/SiO₂/Si substrates using a sol–gel process. The PCT film with a highly (001) orientation showed well-saturated hysteresis loops at an applied field of 800 kV/cm, with remanent polarization ( P _r) and coercive electric field ( E _c) values of 23.6 μC/cm² and 225 kV/cm, respectively. At 100 kHz, the dielectric constant and dielectric loss values of these films were 117 and 0.010, respectively. The leakage-current density of the PCT film was 6.15 × 10⁻⁸A/cm² at 5 V. The pyroelectric coefficient ( p ) of the PCT film was measured using a dynamic technique. At room temperature, the p values and figures-of-merit ( F _D) of the PCT film were 185 μC/m²K and 1.79 × 10⁻⁵ Pa^−0.5, respectively.     

Synthesis and Electrical Characterization of Thin Films of PT and PZT Made from a Diol-Based Sol-Gel Route

Lead titanate (PT) sols were prepared using propanediol, butanediol, or pentanediol solutions of lead acetate trihydrate and titanium diisopropoxide bis(acetylacetonate). Precursor sols for PbZr_0.53Ti_0.47O₃ (PZT) films were prepared from propanediol solutions, with zirconium tetrapropoxide being used as the zirconium source. Films were formed by spin-coating the sols onto silicon and platinized silicon substrates; the resulting gel layers were converted to ceramic films by adopting a two-stage heating schedule with final firing temperatures of 600–700°C. Information on film crystallization, microstructure development, and electrical properties is presented for both compositions. The limiting thickness of surface-smooth crack-free single-layer films was ∼1 μm. The PT films exhibited a "linear" polarization-electric field ( P-E ) response, while the PZT films gave rise to characteristic ferroelectric P-E hysteresis loops. A 0.5 μm thick single-layer PZT film exhibited remanent polarization (P_r) values of ∼34 μC·Cm⁻², with a coercive field ( E _c) of ∼45 kV·Cm⁻²; the relative permittivity (ɛ_r) and the dissipation factor ( D ) were ∼1250 and 0.07. For a 1 μm single-layer PZT film, the respective values were P _r∼19 μC∼Cm⁻², E _c∼40 kV∼Cm⁻², ɛ_r∼750, and D = 0.03.     

Fatigue-Free Lead Zirconate Titanate (Pb(Zr,Ti)O3)-Based Capacitors Co-modified by Lanthanum and Lithium for Nonvolatile Memories

Pb_0.98(La_{1− x} Li _x )_0.02(Zr_0.55Ti_0.45)O₃(PLLZT with 0.1 ≤ x ≤ 0.7) thin films were sol-gel-grown on Pt(111)/Ti/SiO₂/Si substrates, employing a thin lead zirconate titanate (PZT) template layer. Films annealed at >550°C showed a highly (111)-oriented preferential growth. Typical values of the switchable remanent polarization (2 P _r) and the coercive field ( E _c) of the PLLZT/PZT/Pt film capacitor for x = 0.3 were 50 μC/cm² and 39 kV/cm, respectively, at 5 V. All the PLLZT/PZT/Pt capacitors (for 0.1 ≤ x ≤ 0.7) exhibited fatigue-free behavior up to 6.5 × 10¹⁰ switching cycles, a quite stable charge retention profile with time, and high 2 P _rvalues, all which assure their suitability for nonvolatile ferroelectric memories.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Structure Evolution in Hydrothermally Processed (<100°C) BaTiO3 Films

Thin films of cubic BaTiO₃ were processed hydrothermally at 40°–80°C by reacting thin layers of titanium organo metallic liquid precursors in aqueous solutions of either Ba(OH)₂ or a mixture of NaOH and BaCl₂. All films (thickness ∼1 μm) were polycrystalline with grain sizes ranging from nano- to micrometer dimensions. BaTiO₃ formation was facilitated by increasing [OH^-], [Ba²⁺], and the temperature. The film structure was related to the nucleation and growth behavior of the BaTiO₃ particles. Films processed at relatively low [OH^-], [Ba²⁺], and temperatures were coarse grain and opaque, but increasing [OH^-], [Ba²⁺], and temperature caused the grain size to decrease, resulting in transparent films.     

Origin of Orientation in Sol-Gel-Derived Lead Titanate Films

The origin of orientation in sol-gel-derived PbTiO₃ films is investigated in detail. Aging of the solution is found to promote (100) orientation of the films. Characterizing the solution by viscometry indicates that the preferred orientation might be attributable to the change of molecular size in the solution. The substrate also influences the film orientation: more strongly (100)-oriented film forms on Pt-coated Si than on fused quartz. Highly c -axis-oriented films with azimuthal orientation are grown on a (100) SrTiO₃ single-crystal disk.     

Effect of Orientation on the Ferroelectric Behavior of (Pb,Sr)TiO3 Thin Films

Pb_0.6Sr_0.4TiO₃ (PST) ferroelectric thin films were prepared on two different substrates by sol–gel methods. Films derived on the LaNiO(LNO)/Pt/Ti/SiO₂/Si substrates showed a strong (100) preferred orientation. The PST thin films grown on the LNO/Pt/Ti/SiO₂/Si(100) substrate showed a non-uniform rounded grain size distribution and have a larger polarization and lower coercive field E _c. The dependence of electrical properties derived on the Pt/Ti/SiO₂/Si and LNO/Pt/Ti/SiO₂/Si substrates has been studied, with a focus on the change of dielectric constant versus direct current (DC) bias field. The dielectric and ferroelectric properties of the Pb_0.6Sr_0.4TiO₃ thin films deposition on two kinds of substrates were investigated as a function of temperature, frequency and DC bias field.     

Lead Zirconate Titanate Thin Films by Aerosol Plasma Deposition: Microstructure Analysis

Lead zirconate titanate (Pb(Zr,Ti)O₃, PZT) thin films were grown on silicon 〈100〉 substrate by aerosol plasma deposition (APD) using solid-state-reacted powder containing donor oxide Nb₂O₅ when keeping the substrate at room temperature and 200°C. Crystalline phases of the deposited films have been analyzed via X-ray diffractometry (XRD), and microstructure via scanning and transmission electron microscopy (SEM and TEM). Cross-sectional TEM revealed that the microstructure comprised several layers including the deposited PZT film and the platinum-electrode-and-titanium-buffered layers on SiO₂–Si substrate. The Pt-electrode layer contained (111)_Pt twinned columnar grains with a slight misorientation and forming low-angle grain boundaries among them. The PZT layer contained randomly oriented grains embedded in an amorphous matrix. Some of the PZT grains, oriented with the zone axis Z = [[Twomacr]11]_PZT parallel to Z = [111]_Pt, were grown epitaxially on the Pt layer by sharing the (111)_PZT plane with the (111)_Pt twinned columnar Pt crystals. However, the existence of such an orientation relationship was confined to several nanosize grains at and near the PZT-Pt interface, and no gross film texture has been developed. An amorphous grain boundary phase, generated by pressure-induced amorphisation (PIA) in the solid state, was identified by high-resolution imaging. Its presence is taken to account for the densification of the PZT thin films via a sintering mechanism involving an amorphous phase on deposition at 25° and 200°C.     

Effects of TiO2 Seeding Layer on Crystalline Orientation and Ferroelectric Properties of Bi3.15Nd0.85Ti3O12 Thin Films Fabricated by a Sol–Gel Method

The effect of a 20-nm thick TiO₂ seeding layer on the growth of a Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin film on Pt(111) thin-film substrates has been studied. Under otherwise identical deposition process conditions, the BNT film could be turned from a highly random orientation to a (200) preference orientation by adding the seeding layer. Field-emission scanning electron microscope result reveals that the BNT thin film with the TiO₂ seeding layer is composed of fine grains with smaller sizes about 80–150 nm in diameter. The P _r and E _c values of the BNT thin film and BNT film with the TiO₂ seeding layer were 36 and 16 μC/cm², and 96.9 and 92 kV/cm at a voltage of 12 V, respectively. The fatigue test exhibited a very strong fatigue endurance up to 10⁹ cycles for both films. The leakage current densities were generally in the order of 10⁻⁶–10⁻⁵ A/cm² for both samples.     

Sol-Gel Processing and Pyroelectric Properties of Highly Oriented Pb(Mg,Zn)1/3Nb2/3O3 Thin Films

Thin films of Pb(Mg,Zn)_1/3Nb_2/3O₃ (PMZN) were fabricated by spin casting the partially hydrolyzed Pb-Mg-Zn-Nb-O complex alkoxide sols on (111)Pt-coated MgO (100) planes. A strong preferential orientation of (100) perovskite was observed in the thin film derived from the sol exhibiting pseudoplastic behavior. A small-angle X-ray scattering experiment in the Porod region was performed to correlate the observed preferential orientation with the network structure of precursor in the PMZN sol. It was shown that weakly branched precursor systems led to highly oriented perovskite grains after thin-film formation. The highly (100) oriented PMZN film exhibited a larger pyroelectric coefficient (>2 μC/(cm²-K)) and pyroelectric figure-of-merit ( F _D > 4 × 10^1–4 Pa^−1/2) than the PMZN thin film having randomly oriented grains.     

Silver-Modified CrO2 of Core–Shell Nanoparticles and their Magnetic and Impedance Properties

A chemical CrO₃→CrO₂ transformation reaction occurs in the presence of Ag⁺ species forming CrO₂ core–shell magnetic nanoparticles. The process involves heating CrO₃ with AgNO₃ in an aqueous solution in ambient air at a low temperature of 330–350 K. Shell thickness (diamagnetic amorphous silver) is controlled to be ∼2 nm tunable to the magnetic and impedance properties. Improved coercivity H _c=75.7 mT and the Curie temperature T _C=415 K are found with saturation magnetization M _s = 80 Am²/kg after annealing the sample at 573 K in air for 2 h. On heating, the impedance (or electrical resistance) varies steadily through a maximum in the T _C point in a typical half-metallic ceramic behavior. In a dynamic response to frequency f , the T _C increases from 418 K at 1 kHz to as high a value as 505 K at 1 MHz. A nearly f independent and low value of dissipation factor φ as 0.05 is promising for low power loss high-frequency applications of such CrO₂ particles.