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利用射频磁控溅射方法在不同衬底上制备出掺Y2O3 8 %的YSZ薄膜, 用X射线衍射、原子力显微镜(AFM)、扫描电子显微镜和透射光谱测定薄膜的结构、表面特性和光学性能, 研究了退火对薄膜结构和光学性能的影响。结果表明:随着退火温度的升高, 薄膜结构依次从非晶到四方相再到四方和单斜混合相转变, AFM分析显示薄膜表面YSZ颗粒随退火温度升高逐渐增大, 表面粗糙度相应增大, 晶粒大小计算表明, 退火温度的提高有助于薄膜的结晶化, 退火温度从400 ℃到1100 ℃变化范围内晶粒大小从20.9 nm增大到42.8 nm; 同时根据ISO11254-1激光损伤测试标准对光学破坏阈值进行了测量, 发现与其他电子束方法制备的YSZ薄膜损伤阈值结果比较, 溅射法制备的薄膜损伤阈值有了一定程度的提高。 相似文献
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nc-SiC/SiO_2镶嵌薄膜材料的制备、结构和发光特性 总被引:1,自引:0,他引:1
采用二氧化硅/碳化硅复合靶,用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒/二氧化硅基质(nc-SiC/SiO2)镶嵌结构薄膜材料。用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电子显微镜(SEM)和光致发光(PL)实验分析了薄膜的微结构以及光致发光特性。实验结果表明,样品薄膜经高温退火后,部分无定形SiC发生晶化,形成β-SiC纳米颗粒而较均匀地镶嵌在SiO2基质中。以280nm波长光激发薄膜表面,有较强的365nm的紫外光发射以及458nm和490nm处的蓝光发射,其发光强度随退火温度的升高显著增强,发光归结为薄膜中与Si—O相关的缺陷形成的发光中心。 相似文献
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PLD法制备ZnO薄膜的退火特性和蓝光机制研究 总被引:1,自引:0,他引:1
通过脉冲激光沉积(PLD)方法,在O2中和100~500℃衬底温度下,用粉末靶在Si(111)衬底上制备了ZnO薄膜,在300℃温度下生长的薄膜在400~800℃温度和N2氛围中进行了退火处理,用X射线衍射(XRD)谱、原子力显微镜(AFM)和光致发光(PL)谱表征薄膜的结构和光学特性。XRD谱显示,在生长温度300℃时获得较好的复晶薄膜,在退火温度700℃时获得最好的六方结构的结晶薄膜;AFM显示,在此退火条件下,薄膜表面平整、晶粒均匀;PL谱结果显示,在700℃退火时有最好的光学特性。 相似文献
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用磁控溅射工艺在Si基片上沉积500nm厚Cu膜,并在不同温度下进行快速退火处理。用扫描电镜(SEM)与原子力显微镜(AFM)观察薄膜表面形貌,并根据分形理论予以定量表征。结果表明:当退火温度T在小于673K范围内增加时,分形维数Dr逐渐减小;而当T增加至773K时,Dr异常增加。本文根据表面扩散、晶粒长大、缺陷形成等机制对其进行了分析。 相似文献
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以CF4和CH4的混合气体为源气体,以Ar为工作气体,用射频等离子体增强化学气相沉积法(rf-PECVD)制备了氟化非晶碳(a-C:F)薄膜,并在Ar气氛中对不同温度下沉积的薄膜进行了退火处理,以考察其热稳定性。用椭偏仪测量了薄膜的厚度,比较了退火前后膜厚的变化;用傅里叶变换红外光谱仪(FTIR)对薄膜进行了分析,发现当退火温度达到350℃时,位于2900cm^-1附近的三个吸收峰几乎全部消失,随着射频功率的增加,980cm^-1~1350cm^-1范围内的CFx(x=1,2,3)峰向低频方向移动;用原子力显微镜(AFM)观察了不同沉积温度下和经不同退火温度处理后薄膜表面形貌的变化,发现随沉积温度的升高,薄膜表面变得均匀,退火后的薄膜表面比没有退火的薄膜表面平坦。 相似文献
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Aluminum nitride (AlN) films with h〈100〉 crystalline orientation are fabricated on p-Si (100) substrates at room tempera- ture by pulsed laser deposition. The effects of laser energy density and annealing on the quality of the films are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The crystalline quality of AlN films is improved considerably by increasing the laser energy density while there is increased number of farraginous particles on the surface. The annealing treatment at 600~C produces a recrystallization process in the film, characterized by the improvement of the original crystallinity, the appearance of new crystalline orientations, and the increase of the crystallites. The surface becomes rougher due to the increase of the grain size during annealing. 相似文献
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Yunfeng Lai Baowei Qiao Jie Feng Yun Ling Lianzhang Lai Yinyin Lin Ting’ao Tang Bingchu Cai Bomy Chen 《Journal of Electronic Materials》2005,34(2):176-181
Nitrogen-doped Ge2Sb2Te5 (GST) films for nonvolatile memories were prepared by reactive sputtering with a GST alloy target. Doped nitrogen content
was determined by using x-ray photoelectron spectroscopy (XPS). The crystallization behavior of the films was investigated
by analyzing x-ray diffraction (XRD) and differential scanning calorimetry (DSC). Results show that nitrogen doping increases
crystallization temperature, crystallization-activation energy, and phase transformation temperature from fcc to hexagonal
(hex) structure. Doped nitrogen probably exists in the grain vacancies or grain boundaries and suppresses grain growth. The
electrical properties of the films were studied by analyzing the optical band gap and the dependence of the resistivity on
the annealing temperature. The optical band gap of the nitrogen-doped GST film is slightly larger than that of the pure GST
film. Energy band theory is used to analyze the effect of doped nitrogen on electrical properties of GST films. Studies reveal
that nitrogen doping increases resistivity and produces three relatively stable resistivity states in the plot of resistivity
versus annealing temperature, which makes GST-based multilevel storage possible. Current-voltage (I-V) characteristics of
the devices show that nitrogen doping increases the memory’s dynamic resistance, which reduces writing current from milliampere
to microampere. 相似文献
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Thin GaN films were grown on GaAs(111) substrates by radical-beam gettering epitaxy. The structural quality of the films was studied by high-resolution x-ray diffraction. The chemical composition of the GaAs surface and GaN film was studied by x-ray photoelectron spectroscopy. It is shown that Ga-N and As-N bonds are formed on the GaAs surface at initial growth stages at low temperatures. The state of the film-substrate interface was studied. It was found that prolonged annealing of GaN films in nitrogen radicals shifts the composition to nitrogen excess. 相似文献
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Md. Rahman Anisur T. Osipowicz D. Z. Chi W. D. Wang 《Journal of Electronic Materials》2005,34(8):1110-1114
The effects of prolonged annealing (10 h) at low temperature (500°C) have been studied in 20-nm Ni/Si (100) thin films using
Rutherford backscattering spectroscopy (RBS), x-ray diffraction (XRD), scanning electron microscopy (SEM) in conjunction with
energy-dispersive spectrometry (EDS), and four-point probe techniques. We observe that nickel monosilicide (NiSi) is stable
up to 4 h annealing at 500°C. It is also found that, after 6 h and 10 h annealing, severe agglomeration sets in and NiSi thin
films tear off and separate into different clusters of regions of NiSi and Si on the surface. Due to this severe agglomeration
and tearing off of the NiSi films, sheet resistance is increased by a factor of 2 despite the fact that no NiSi to NiSi2 transition occurs. It is also observed that, with increasing annealing time, the interface between NiSi and Si becomes rougher. 相似文献
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K. A. Jones M. A. Derenge T. S. Zheleva K. W. Kirchner M. H. Ervin M. C. Wood R. D. Vispute R. P. Sharma T. Venkatesan 《Journal of Electronic Materials》2000,29(3):262-267
AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200°C, 1400°C, and 1600°C for
30 min in an inert atmosphere to examine how their structure, surface morphology, and substrate-film interface are altered
during high temperature thermal processing. Shifts in the x-ray rocking curve peaks suggest that annealing increases the film
density or relaxes the films and reduces the c-axis Poisson compression. Scanning electron micrographs show that the AlN begins to noticeably evaporate at 1600°C, and the
evaporation rate is higher for the films grown on sapphire because the as-deposited film contained more pinholes. Rutherford
backscattering spectroscopy shows that the interface between the film and substrate improves with annealing temperature for
SiC substrates, but the interface quality for the 1600°C anneal is poorer than it is for the 1400°C anneal when the substrate
is sapphire. Transmission electron micrographs show that the as-deposited films on SiC contain many stacking faults, while
those annealed at 1600°C have a columnar structure with slightly misoriented grains. The as-deposited films on sapphire have
an incoherent interface, and voids are formed at the interface when the samples are annealed at 1600°C. Auger electron spectroscopy
shows that virtually no intermixing occurs across the interface, and that the annealed films contain less oxygen than the
as-grown films. 相似文献
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Wardhana A. Sasangka Chee Lip Gan Carl V. Thompson Won Kyoung Choi Jun Wei 《Journal of Electronic Materials》2011,40(11):2329-2336
Thermocompression bonding of through-layer copper interconnects is of great interest for fabrication of three-dimensional
(3D) integrated circuits. We have investigated interactions of Cu films with noneutectic Sn-In at length scales of 1 μm to 5 μm. The effects of bonding time, bonding temperature, and post- bonding annealing temperature on intermetallic compound (IMC)
formation, joint microstructure, and shear strength were investigated using scanning electron microscopy (SEM), energy-dispersive
x-ray spectroscopy (EDS), x-ray diffractometry (XRD), and shear testing. It is shown that bonding temperature plays an important
role in increasing the true contact area, while the postbonding annealing temperature affects the formation of a single IMC,
the η-phase [Cu6(Sn,In)5]. Both of these phenomena were found to contribute to the shear strength of the joints. It is shown that two-step bonding
processes, involving short bonding times and longer postbonding annealing, can be used to optimize the bond formation for
increased throughput. 相似文献
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Effect of Temperature on Structural and Morphologic Properties of ZnO Films Annealed in Ammonia Ambient 总被引:3,自引:0,他引:3
Shoubin Xue Huizhao Zhuang Chengshan Xue Lijun Hu Baoli Li Shiying Zhang 《Journal of Electronic Materials》2007,36(4):502-506
ZnO thin films were prepared on Si(111) substrates by pulsed laser deposition (PLD). Then, the samples were annealed at different
temperatures in NH3 ambient and their properties were investigated particularly as a function of annealing temperature. The structure, morphology,
and optical properties of ZnO films were studied by x-ray diffraction (XRD), Fourier transform infrared spectroscope (FTIR),
scanning electron microscope (SEM), and photoluminescence (PL). The results show that the increase of annealing temperature
makes for the improvement in the crystal quality and surface morphology below the temperature of 650°C. However, when the
annealing temperature is above 650°C, the ZnO films will volatilize and, especially at 750°C, ZnO will volatilize completely. 相似文献
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RF磁控溅射技术制备纳米硅 总被引:1,自引:0,他引:1
利用硅-SiO2复合靶,RF磁控溅射技术制备了三种富硅量不同的SiO2薄膜,并在较大的温度范围内进行了退火。利用x射线光电子能谱,对刚淀积的样品进行了分析,结果表明三种样品都存在纳米硅粒子。使用高分辨率透射电子显微镜和电子衍射技术研究了退火后样品中纳米硅粒子析出和结晶情况,富硅量较大的两种SiO2薄膜都观测到纳米硅晶粒。统计结果表明:复合靶中硅组分从20%增加到30%,纳米硅晶粒的平均尺寸增加了15%、密度增加了2.5倍,而且随着退火温度从900℃增加到1100℃,纳米硅晶粒的平均尺寸和密度都明显增加。 相似文献
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Characterizations were performed to determine the properties of Ti contacts to 3C-SiC. Both carbides and silicides were studied
carefully following heat treatments from 600 to 1000°C. The peak associated with silicides in the Auger Si spectrum is identified.
Structural and chemical analyses using Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction
revealed how the electrical properties of the contacts correlate with the interface chemistry. It is found that the crystalline
C49 TiSi2 formed at the interface is closely related to the lowering in the contact resistance. The barrier height decreases from 0.53
eV for as-deposited films to 0.44 eV with annealing. The contacts maintained stable electrical characteristics after annealing
at 600°C for extended periods of time. 相似文献