用于平场光谱仪的非球面全息凹面光栅设计

基于全息凹面光栅理论和ZEMAX软件,设计了一种用于平场光谱仪的消象差平场非球面全息凹面光栅。与采用相同口径、相同相对孔径的全息凹球面光栅构成的平场光谱仪比较,在入射狭缝宽度相同的情况下,该光栅所构成的平场光谱仪的分辨率得到明显提高。同时,利用较大相对孔径非球面全息凹面光栅,可使平场光谱仪的结构更紧凑,从而可实现平场光谱仪的小型化。     

平场全息凹面光栅的设计

介绍一种从罗兰圆结构出发,利用ZEMAX光学软件设计平场全息凹面光栅的方法。此设计方法简便,在兼顾平场和提高分辨率方面效果显著。最后给出了一个设计实例,并对设计结果进行了分析和评价。     

球差在平场全息凹面光栅设计中的作用

基于平场全息凹面光栅几何像差理论,分析了初级像差与高阶像差特别是球差对平场全息凹面光栅成像的作用。通过一个具体的设计,分别讨论宽波段光栅和窄波段光栅设计中校正球差与否对设计结果的影响。通过对光谱像大小和各种像差系数大小进行对比分析得出以下结论:宽波段平场全息凹面光栅像差较大,决定光谱像大小的主要是初级像差,球差的影响难以显现,在进行光栅设计时可以不考虑球差;窄波段光栅的离焦像差较小,球差的影响开始变得显著,此时在设计过程中考虑球差的校正能够进一步改善光栅的成像质量。     

窄波段高分辨率平场全息凹面光栅的一种简单设计方法

给出利用 型全息凹面光栅的无离焦和消彗差特性 ,设计窄波段高分辨率平场全息凹面光栅的一种简单方法。详细讨论了该光栅的优化设计 ,并给出设计实例及数值评估结果。     

宽波段全息罗兰光栅的优化

罗兰光栅存在的主要像差是像散和弧矢彗差,影响其光通量和光谱分辨率。根据凹面全息光栅的几何像差理论,分析了记录光源点在罗兰圆外所制作的全息罗兰光栅的宽波段像差特性。发现像散和弧矢彗差能够在两个波长处被同时消除;并且在两波长之间的波段范围内,像散和弧矢彗差相对传统光栅均得到明显改善。基于此像差特性提出一种设计宽波段高分辨罗兰光栅的方法,通过选择适当的使用结构和校正波长,能够在整个使用波段有效地校正像散和弧矢彗差。利用这种优化方法设计了工作波段为160~600 nm的罗兰光栅。光线追迹结果显示,所设计光栅的光谱分辨率和能量集中度在整个使用波段较传统光栅均有显著提高。     

Offner凸面光栅超光谱成像仪的设计与研制

传统的平面或凹面光栅分光的光谱成像仪受像差校正的限制,数值孔径较小,能量利用率低,难以实现高的光谱和空间分辨率.用一块凸面光栅代替全反射式Offner中继系统中的凸面反射镜.构成的Offner凸面光栅超光谱成像仪具有固有像差小的优点.凸面光栅的制作采用全息记录的方法.通过优化设计全息记录参数和光栅槽形,可获得高的衍射效率.优化设计并研制得到的凸面光栅超光谱成像仪结构紧凑、像差校正能力强、数值孔径大、集光本领高,可同时获得高的光谱和空间分辨率.     

全息凹面光栅二阶圆场和平场成象特性

从全息凹面光栅几何成象理论出发，用简捷的解析方法研究固定入射狭缝全息凹面衍射光栅摄谱装架二阶圆场和平场成象特性。指出罗兰圆是唯一的二阶子午无离焦圆场摄谱装架和只存在的唯一的一簇二阶矢无象散平场摄谱装架。还指出仅当柱面或平面光栅时，才能形成二阶子午无离焦平场和弧矢无象散圆场谱面，进一步讨论获得既不离焦也无象散的圆场和平场装架的可能性。     

一种体相位全息透射式光栅的光谱仪分光系统

针对平面和凹面反射式光栅型光谱仪分光光路(SLP),存在像差大、谱面平直度差和衍射效率不高等不足,设计了一套基于体相位全息透射式(VPHT)光栅的分光光路。在理论探讨的基础上通过数值仿真模拟了VPHT光栅的衍射效率情况;为了充分验证所设计光路的可行性,实验中通过光谱定标验证了光路的光谱分辨率优于2 nm,通过最小二乘线性拟合算法得到定标波长与对应探测像元的校准关系式,对635 nm波长采用多次测量取平均值,测试结果表明波长绝对误差为0.37 nm,整个定标波长点的均方根误差(RMSE)为0.3 nm;另外,使用了多项式拟合算法建立了200~800 nm光谱范围内的波长偏移量与对应衍射波长的关系式,能较好地解决分光光路中波长校正的问题。     

无透镜傅里叶变换数字全息术的特点分析和讨论

利用传统全息的理论 ,分析了无透镜傅里叶变换数字全息记录和再现的方法及其相应的物像关系、记录系统结构参数对再现像分辨率的影响 ,并进行相应的实验验证。理论分析和实验结果都表明 :无透镜傅里叶变换全息术 ,不仅降低了数字全息对记录采样的要求 ,而且使再现像分辨率得到较大的提高。同时 ,在保证再现像分离的前提下 ,通过增大记录系统的数值孔径 (缩短记录物体到CCD和参考点源的距离 ) ,可以实现数字全息再现像分辨率的提高     

取样光栅的设计及衍射行为研究

设计了用于惯性约束核聚变系统的取样光栅。利用光全息学的基本原理,设计了记录全息取样光栅掩模的消像差光学系统,并使用光学设计软件ZEMAX分析了它的像差;还利用严格耦合波理论对取样光栅的衍射效率问题进行了深入的研究。研究发现,在占宽比和槽深这两个光栅结构参量中,槽深的变化对衍射效率更敏感。这些都为取样光栅的实际制作提供了有意义的结果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.