Optical and Electrical Properties of Amorphous and Nanocrystalline (La0.8Sr0.2)0.9MnO3 Thin Films Prepared from Low-Temperature Processing Technique

The results of a study on the optical and electrical properties of (La_0.8Sr_0.2)_0.9MnO₃ (LSM) thin films obtained by a polymeric precursor spin coating technique were presented. This method allowed preparation of optical quality thin films at annealing temperatures around 800°C. Amorphous and crystalline LSM thin films were studied by optical and electrical conductivity measurements. The energy-dependent absorption coefficients for the crystalline specimen were calculated from optical spectra and extra absorption was observed in the range of 1.8–2.5 eV with the exchange-gap excitation behavior in the 3–5 eV range. In comparison to the amorphous specimens, the electrical conductivity of the nanocrystalline specimen increased two to three orders of magnitude with decreasing activation energy. The charge carrier absorption model suggested an increase of the carrier concentration in the nanocrystalline specimen which may be a reason for the change in the electrical conductivity.     

Effect of Donor, Acceptor, and Donor–Acceptor Codoping on the Electrical Properties of Ba0.6Sr0.4TiO3 Thin Films for Tunable Device Applications

We have investigated the effects of donor, acceptor, and donor–acceptor codoping on both the dielectric properties and the leakage current behavior of Ba_0.6Sr_0.4TiO₃ thin films prepared by the metalorganic solution deposition technique. La and Co were selected as donor and acceptor dopants, respectively. The electrical properties depend strongly on the type of dopants. Compared with others, codoped BST films have a much lower loss tangent, higher figure of merit, and lower leakage current. The electronic conduction mechanisms of the three types of dopants are reported.     

The Structure and Dielectric Tunable Properties of Fine-Grained Ba0.6Sr0.4TiO3 Ceramics Prepared by Spark Plasma Sintering

Barium strontium titanate is a promising material for microwave-phased array applications. ^1,2 In this study, highly dense and fine-grained Ba_0.6Sr_0.4TiO₃ ceramics were prepared using the spark plasma sintering (SPS) technique. The structure and dielectric tunable properties of the samples were investigated. The "distorted nano-region" emerged in the interior of the grains of SPS samples, and resulted in the deterioration of the dielectric tunable properties of Ba _x Sr_{1− x} TiO₃. This phenomenon indirectly testified to the assumption of the "polar nano-region" mechanism. After the SPS samples were annealed, the "distorted nano-region" disappeared and better dielectric tunable properties were obtained. The dielectric constant was decreased to 1048, and the K value (Commutation Quality Factor) reached 7089.     

Effects of CuO Doping on the Microstructural and Dielectric Properties of Ba0.6Sr0.4TiO3 Ceramics

This study investigates the effect of CuO on the sintering behavior, dielectric properties, and microstructures of Ba_0.6Sr_0.4TiO₃ (BST) ceramics. The ceramics were sintered in air at temperatures ranging from 1000° to 1230°C. It is found that a small amount of added CuO (0.6 mol%) can significantly increase the density and improve the dielectric properties of BST ceramics. Doped BST ceramics can be sintered to a density >95% of the theoretical density at 1150°C. scanning electron microscopic observations show that the BST grain sizes increase with increasing amounts of CuO. No secondary phases in the BST ceramics are observed using X-ray diffraction pattern for CuO additions up to 0.9 mol%. However, compositional analysis using transmission electron microscopy-EDX for the BST ceramics with 0.9 mol% CuO sintered at 1150°C showed that a small level of secondary phase formation is present. On the other hand, large dislocations are observed for BST with 0.6 mol% CuO addition as a result of lattice distortion, which creates the vacancy condensation because of the atomic mismatch in the solid solutions. Optimal CuO doping concentrations can reduce the loss tangents of BST that can also ensure a high dielectric constant. When the doping concentration of CuO is 0.6 mol% and the ceramic is sintered at 1150°C, the BST ceramic has the following properties at 1 MHz: dielectric constant=4094, tan δ=0.55%.     

Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag–Ba0.5Sr0.5TiO3 Thin Films

Nanocrystalline x Ag–(1− x )Ba_0.5Sr_0.5TiO₃ (Ag–BST, 0≤ x ≤0.1, where x is the mole fraction of Ag) thin films have been deposited on Pt/Ti/SiO₂/Si substrates by a sol–gel method. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, and X-ray photoelectron spectroscopy (XPS). The core-level XPS of oxygen (O1 s ) of the Ag–BST films indicate that an optimum amount of Ag ( x =0.02 or 2 mol%) enhances the binding energy of oxygen, possibly through a mechanism in which the electrophilic oxygen dissociates from the Ag surface and fills the oxygen vacancies. Similarly, the binding energy of Ag (Ag3 d ) shows a shift toward a higher value with increasing Ag up to 4 mol%, probably because of the chemical shift of Ag in BST along the surface layers, surface relaxation, or changes in the Fermi level of small Ag particles in the solid solution range of Ag in BST films ( x ≤0.04). The leakage current density of 2 mol% Ag-added BST (∼10⁻⁶ A/cm²) is less by about an order of magnitude than pure BST at an electric field of 200 kV/cm. A defect model is proposed to explain the observed leakage current density of Ag–BST films satisfactorily.     

Recrystallization of Oxygen Ion Implanted Ba0.7Sr0.3TiO3 Thin Films

The crystallization behavior of chemical-solution-deposited and amorphous Ba_0.7Sr_0.3TiO₃ (BST) thin films was analyzed with respect to the evolution of the structural and dielectric properties of the films as a function of the annealing temperature. The amorphous films were produced by oxygen ion implantation into crystalline BST thin films. In the amorphous thin films, the crystallization to the perovskite phase occurred at T = 550°C, whereas the as-deposited CSD films showed the first crystalline XRD-reflex only after annealing at T = 650°C. Here a carbon-rich intermediate phase delayed the crystallization process to higher temperatures.     

Low-Temperature Sintering of (Ba0.6Sr0.4)TiO3

An addition of just 0.4 wt% Li₂O to (Ba_0.6Sr_0.4)TiO₃ powder was able to reduce the sintering temperature to ≤900°C and produce ceramics with a relative density of 97%. Small amounts of two secondary phases were formed during this process: Li₂TiO₃ and Ba₂TiO₄. The addition of Li₂O depresses the ferroelectric character of the (Ba_0.6Sr_0.4)TiO₃ and, as a result, reduces the permittivity, improves the temperature coefficient of permittivity, and reduces the dielectric losses. The tunability shows no significant variation with Li₂O concentration and remains between 16.5% and 13.5%. A low-temperature sintering mechanism was proposed. The mechanism involves the intermediate formation of BaCO₃, its melting and the incorporation of Li⁺ into the BST. The sintering mechanism can be characterized as reactive liquid-phase sintering.     

Chemical Solution Deposition of Transparent and Metallic La0.5Sr0.5TiO3+x/2 Films Using Topotactic Reduction

Metallic and transparent La_0.5Sr_0.5TiO_{3+ x /2} films were prepared by the chemical solution deposition (CSD) method using topotactic reduction processing. The use of Si powder as the reducing agent was facile and allowed easy manipulation. It was observed that metallic (resistivity at 300 K ∼2.43 mΩ cm) and transparent (∼80% transmittance at visible light) La_0.5Sr_0.5TiO_{3+ x /2} films could be obtained with an annealing temperature of 900°C, which was significantly lower than the hydrogen reduction temperature (∼1400°C). The successful preparation of metallic and transparent La_0.5Sr_0.5TiO_{3+ x /2} films using CSD has provided a feasible route for depositing other perovskite-structured functional layers on La_0.5Sr_0.5TiO_{3+ x /2} films using this low-cost all CSD method.     

Fabrication and Characterization of Pyroelectric Ba0.8Sr0.2TiO3 Thin Films by a Sol-Gel Process

A sol-gel process was used to prepare pyroelectric Ba_0.8Sr_0.2TiO₃ thin films with large columnar grains (100–200 nm in diameter) on Pt/Ti/SiO₂/Si substrates, via using a 0.05 M solution precursor. The relationship between dielectric constant and temperature (ɛ_r- T ) showed two distinctive phase transitions in the Ba_0.8Sr_0.2TiO₃ thin films. Both the remnant polarization and the coercive field decreased as the temperature increased from −73°C to 40°C. Its low dissipation factor (tan δ= 2.6%) and high pyroelectric coefficient ( p = 4.6 × 10⁻⁴ C·(m²·K)⁻¹ at 33°C), together with its good insulating properties, made the prepared Ba_0.8Sr_0.2TiO₃ thin films promising for use in uncooled infrared detectors and thermal imaging applications.     

Alkoxide Route to La0.5Sr0.5CoO3 Films and Powders

An all-alkoxide route to films and nano-phase powders of the La_0.5Sr_0.5CoO₃ perovskite is described. To our knowledge, this is the first purely alkoxide-based route to (La_{1− x} Sr _x )CoO₃, and it yields phase-pure and elementally homogeneous perovskite at 700°C by heating at 2°C/min. At 700°C, a cubic unit cell was obtained with a _c=3.853Å, and after further heating to 1000°C, a rhombohedral cell could be indexed: a _r=5.417 Å, α_r=59.94°. Ninety to 130 nm thick films of La_0.5Sr_0.5CoO₃ were obtained by spin coating. The gel-to-oxide conversion was studied in some detail, using thermo-gravimetric analysis, differential scanning calorimetry, powder X-ray diffraction, IR spectroscopy, and transmission electron microscope equipped with an energy-dispersive X-ray spectrometer.     

Construction of PbZr0.4Ti0.6O3- and Ba0.9Sr0.1TiO3-Based Optical Microcavities by Chemical Solution Deposition

Herein we report on a simple, low cost, and feasible route for the construction of PbZr_0.4Ti_0.6O₃ (PZT)- or Ba_0.9Sr_0.1TiO₃ (BST)-based optical microcavities using a single chemical solution containing polymer polyvinylpyrrolidone. The obtained multilayer systems not only exhibit good ferroelectric performance, but also display well-defined resonant modes with a quality factor of no <66. Compared with PZT microcavities, the optical properties of the BST microcavities appear to be superior.     

Effects of Individual Layer Thickness on the Structure and Electrical Properties of Sol–Gel-Derived Ba0.8Sr0.2TiO3 Thin Films

Ba_0.8Sr_0.2TiO₃ thin films were prepared with various individual layer thicknesses using a sol–gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant–temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was <20 nm.     

Effect of Polyethylene Glycol Content on the Optical Properties of Ba0.9Sr0.1TiO3 Multilayers

Quasiperiodic Ba_0.9Sr_0.1TiO₃ (BST) multilayers have been fabricated on SrTiO₃ substrates by using chemical solutions containing polyethylene glycol (PEG), and effect of PEG content on optical properties of the BST multilayers have been investigated. Each multilayer with a single perovskite phase displays a layered structure consisting of dense and porous BST layers. It is found that the central wavelength of the reflection-band for BST multilayers shifts to longer wavelength with increasing the PEG concentration within a given polymer amount range. With the same numbers of period and processing condition, the BST multilayers derived from chemical solutions containing PEG additives with a relative molar amount of 0.5, exhibit the highest optical reflectivities.     

Defect Structure and Electrical Properties of Single-Crystal Ba0.03Sr0.97TiO3

The electrical conductivity and thermoelectric power of single-crystalline Ba_0.03Sr_0.97TiO₃ were measured over a wide temperature (800° to 1100°C) and oxygen partial pressure (10⁵ to 10^-15 Pa) range. Our experimental data, like those of previous workers on nominally undoped BaTiO₃ or SrTiO₃, support a defect model based on doubly ionized oxygen vacancies, electrons, holes, and accidental acceptor impurities. The simultaneous measurement of electrical conductivity and thermoelectric power, together with precise experimental data obtained with an advanced thermoectric power measurement technique, enabled us to determine for the first time reliable values for the preexponential factors and the activation energies which characterize the defect equilibrium constants. These calculated values, together with the defect model, were found to give an excellent fit to the experimental data, and were used to generate the boundaries, in P _o2-1/ T space, of the various defect regimes.     

Microstructure–Dielectric Properties Relationship in Ba0.6Sr0.4TiO3–Mg2SiO4–Al2O3 Composite Ceramics

0.60Ba_0.6Sr_0.4TiO₃(BST)–(0.40− x )Mg₂SiO₄(MS)– x Al₂O₃ ( x =0, 0.5, 3, 5wt%) composite ceramics exhibit excellent characteristics suitable for tunable device applications. With increasing amount of Al, the dielectric peak can be quantitatively broadened and suppressed; the "phase transition temperature" T _c or ( T _m) shifts to a lower temperature. Meanwhile, the tunability is still high in a wider temperature range. Far from T _c, pyroelectric effects are observed by using the Byer and Roundy technology and Slim polarization hysteresis loops are observed under high ac dielectric field at 10Hz. These proved the existence of spontaneous polarization in certain possible orientations in a broad temperature range above T _c in the paraelectric medium and reveal why 0.60BST–(0.40− x )MS– x Al₂O₃ have such remarkable dielectric nonlinearity.     

Microwave Dielectric Properties and Low-Temperature Sintering of Ba0.60Sr0.40TiO3 Ceramics

In the present work, the sintering behaviors and dielectric properties of Ba_0.60Sr_0.40TiO₃ (BST) ceramics with the addition of BaCu(B₂O₅) were investigated in detail. The results indicated that the addition reduced the sintering temperature of BST by about 500°C. It was suggested that a liquid phase BaCu(B₂O₅) assisted the densification of BST ceramics at lower temperatures. For a low-level BaCu(B₂O₅) addition (2.0 mol%), the BST sample sintered at 950°C for 5 h displayed good dielectric properties, with a moderate dielectric constant (ɛ=2553) and a low dielectric loss (tan δ=0.00305) at room temperature and at 10 kHz. The sample showed 45.9% tunability at 10 kHz under a dc electric field of 30 kV/cm. At the frequency of 0.984 GHz, BST-added 2.0 mol% BaCu(B₂O₅) possessed a dielectric constant of 2204 and a Q value of 146.7.     

Modifying Structures and Ferroelectric Properties of Pb(Zr0.6Ti0.4)O3 Thin Films by Constraint-Annealing of Precrystallized Film

A tensile or compressive mechanical constraint was applied, during annealing, on the Pb(Zr_0.6Ti_0.4)O₃ (PZT) ferroelectric films to investigate the effects of stress on its crystal structure and electric properties. The external stress was applied by bending the substrate into a circular section. By using both precrystallized film structure and high constraint strain (0.08%), the stress states of PZT during the crystallization process became controllable. Structural change of polycrystalline PZT was observed when crystallized under a compression constraint. Moreover, these films with compression constraint annealing exhibited enhanced remnant polarization by ∼70% and increased dielectric constant by ∼68%. The variations in ferroelectric behaviors were correlated to domain configuration, texture, amount of pyrochlore phase, grain size and residual stress, which are dependent on the stress state during annealing process.     

Low-Temperature Sintering (Ba0.6Sr0.4)TiO3 Thick Film Prepared by Screen Printing

(Ba_0.6Sr_0.4) TiO₃ thick films doped with glass slurry were fabricated by the screen-printing technique. The dielectric properties and the sintering mechanism were investigated. The films can be sintered at 600°C. The dielectric constant is 88 and the dielectric loss is 0.002 with a tunability of 23.86% under 100 kV/cm. Higher dielectric constant and tunability were obtained in the samples sintered at higher temperatures. The highest tunability is 61.12% under 150 kV/cm in the sample sintered at 800°C. The low sintering temperature and dielectric loss of the glass-doped thick films make them potential candidates for LTCC and microwave tunable devices.     

Structural and Electric Properties of Sol–Gel-Derived Ba0.9Sr0.1TiO3 Multilayers

Crack-free Ba_0.9Sr_0.1TiO₃ (BST) and Mn-doped Ba_0.9Sr_0.1TiO₃ (BSTM) multilayers with thickness over 2 μm have been prepared by chemical solution deposition based on one single precursor. Both multilayers exhibit good performance as Bragg reflectors. Mn doping tends to suppress the leakage current in BST multilayers effectively by smoothing the layers and the reduction of the charge carries. The Mn-doped BST multilayer displays an excellent ferroelectric property, with an average remnant polarization ( P _r⁺– P _r⁻)/2 of 12.69 μC/cm² and an average coercive field ( E ⁺ – E ⁻ )/2 of about 72.95 kV/cm under an applied field of 440 kV/cm.     

Electric Field-Dependent Dielectric Properties and High Tunability of Porous Ba0.5Sr0.5TiO3 Ceramics

Porous Ba_0.5Sr_0.5TiO₃ (BST) ceramics were fabricated by the traditional solid-state reaction process, and their structural, microstructural, dielectric, and tunability properties were systemically investigated. Compared with the fully dense BST samples, porous samples exhibit smaller grain sizes, a more uniform microstructure, and much lower dielectric constants, while at the same time, exhibiting little increase in tunability, which is beneficial to the development of microwave-tunable applications. At a frequency of 10 kHz and a temperature of 18°C, as porosity increased from 0% to 28.8%, the dielectric constant of the BST ceramics (under zero bias field) decreased from ɛ_r(0)∼1690 to ɛ_r(0)∼990, while the dielectric losses were still less than 0.2%, and the tunability increased from 17.6% to 19.6% (2.6 kV/mm).