Operation of a 100-bit, 2.6 µm bubble shift register

Complete circuit operation for a small 100-bit serial shift register memory with a 10.6 μm period fabricated on a garnet wafer using electron beam lithography and single level all-permalloy technology is reported. Overall circuit operation including generation, propagation, and detection was achieved with a 6 Oe bias margin using a 1 kHz rotating field. Although the circuit design and fabrication techniques were not optimized, we believe that this is the first published report of complete circuit operation for a single level device with bubbles as small as 2.6 μm. The performance of two different types of chevron expander detectors and two different generators was evaluated and circuits combining disk generators with herringbone detectors were found to provide the best overall operating margin. At low speeds (∼5 Hz) high-bias failures were caused by failure of the domains to strip out fully in the detector while the low bias limit was determined by the introduction of spurious bubbles into the track near the generator.     

68 kbit capacity 16 µm-period magnetic bubble memory chip design with 2 µm minimum features

A bubble propagating structure that operates well on a 14 μm to 18 μm propagate period with a nominal 2 μm minimum feature size has been designed. The structure consists of only 1 discrete permalloy feature per circuit period. Sixty-eight kbit-capacity memory chips based on such structures have been designed, built, characterized, packaged and the packages have been characterized. The chip is organized as a set of minor (storage) loops with separate write and read major lines. The bubble manipulating functions, of which the replicate and transfer gates are the most critical, have also been designed with 2 μm minimum features. The design is adequate to provide a 14 Oe bias field margin range with drive fields of about 35 Oe, using a bubble garnet material with approximately 170 Oe free bubble collapse field. Sixty-eight kbit single loop shift register type chips designed using similar propagating structures, however, provide over 20 Oe bias field margin ranges with drive fields of about 35 Oe.     

The effect of DC in plane field on the operation of field access bubble memory devices

The effect of a small dc in-plane field on the start-stop operation of field access bubble devices has been studied. Experimental results show that the bias margin in this mode is very sensitive to the magnitude of the field and its orientation relative to the start-stop direction of the drive field. In a T-I circuit a complete margin loss was observed for an in-plane field of 3 Oe oriented antiparallel to the start-stop direction. For parallel orientations of the in-plane field the start-stop margin improved and approached that of the continuous propagation margin at an in-plane field of approximately 6 Oe. Dependence of the start-stop margin on the orientation of the start-stop direction relative to the pattern was also observed. Measurements of the bubble collapse field at various points in the pattern show a very strong dependence on the in-plane field and the permalloy geometry. The collapse-field results and magnetostatic energy considerations which take into account local field variations and bubble-bubble interactions provide a basis for understanding the experimentally observed start-stop margins. These results show that a small tilt (2 to 3°) should be introduced in the bias field to overcome normal alignment tolerances and ensure that a favorable in-plane field is always present. This assures reliable start-stop operation.     

Wall coding for a field access bubble device

Device design and margins are given for bubble wall state coding in a field access Permalloy device. The wall states chosen to be the binary states are the S = 1 state and the S = ½, both of which have unsaturated capping layers. The 2.7 μm epitaxial (epi) garnet (YSmGdCaGe) is grown on top of a thin (0.2 μm) epi garnet (YNd GdCaGe) layer which has in-plane magnetization and is called a boot. The S = 1 state has 15 percent current margin and 20° phase margin: the S= ½ state has 45 percent current margin and 35° phase margin. The read-write bias margin is 18 Oe and is limited by the deflectometer detector.     

High-Transmission-Efficiency and Side-Viewing Micro OIDRS Probe for Fast and Minimally-Invasive Tumor Margin Detection

The determination of a cancer free margin I organs is a difficult and time consuming process, with an unmet need for rapid determination of tumor margin at surgery. In this paper, we report the design, fabrication and testing of a novel miniaturized optical sensor probe with "side-viewing" capability. Its unprecedented small size, unique "side-viewing" capability and high optical transmission efficiency enable the agile maneuvering and efficient data collection even in the narrow cavities inside the human body. The sensor probe consists of four micromachined substrates with optical fibers for oblique light incidence and collection of spatially resolved diffuse reflectance from the contacted tissues. The optical sensor probe has been used to conduct the oblique incidence diffuse reflectance spectroscopy (OIDRS) on a human pancreatic specimen. Based on the measurement results, the margin of the malignant tumor has been successfully determined optically, which matches well with the histological results.     

Magnetiostatic interactions in some bubble-domain propagation circuits

Cylindrical magnetic domain (CMD) propagation actually comes to the generation of magnetostatic traps (MST) which successively "capture" the domains on their way along the propagation path. There are three types of MST which correspond to three types of magnetostatic interactions between a domain magnetization and "active" elements of propagation circuits. An interaction of CMD magnetization with ferromagnetic overlay (the third type of an interaction) can generate MST with the maximum depth of approximately 16 Oe. NIST depth in practical propagation circuits is bound to be 6-10 Oe. The data rate upper limit for the techniques using the interaction of CMD and ferromagnetic overlay is determined by the minimum time interval necessary for domain capture by MST and for orthoferrites, which is approximately 1 Mbit/s. The rare-earth orthoferrite single crystals synthesized by the floating zone technique were used throughout the experiments.     

The propagation of magnetic bubbles on permalloy disks

A magnetic bubble generator consisting of a Permalloy disk and a current conductor loop has been used recently in a mass memory design utilizing magnetic bubble technology. The bias field range in which the disk can hold the seed bubble is measured in this report as a function of of the rotating field frequency. Above a critical frequency fc, the bias field margins begin to decrease. The dependence of fcon disk size is obtained for disks with diameters from 16 μm up to 43 μm at rotating fields of 20 and 30 Oe. The separation between Permalloy disks and the garnet film is kept at 0.8 μm or 1.6 μm. Results show that at a fixed rotating field, a smaller disk is preferable at higher frequency for a magnetic bubble material with a given mobility. The critical frequency fcobtained is in good agreement with a theoretical calculation using the viscous damping model by Rossol et al. For frequencies below fc, the bias field margin on the disk is equal to that of the propagating channel and circuit failure due to the loss of the generator seed bubble can be eliminated.     

Design and characterization of ion-implanted tracks for 16 Mbit/cm2storage density bubble memory devices

The ion-implanted propagation tracks with contiguous disk patterns (CD tracks) have been confirmed to be better for high density propagation tracks (≥ 16 Mbit/cm²) than those with snake patterns (snake tracks), because of less interactions between bubbles on the other side in the same track. The CD tracks with 1.8 µm × 2.0 µm cell size for 0.5 µm bubbles have been evaluated. The large operating bias field margin of 12.4 percent is obtained at the quasi-static operation with rotating field HRof 60 Oe. The minimum rotating field is 40 Oe. Interdigital folded minor loops are proposed and operated. The proposed minor loops are composed of straight propagation tracks connected alternately to relax the in-side turns. The overall operating margin of 8.4 percent (46 Oe) is obtained at HR= 60 Oe. The feasibility of 16 Mbit/cm²storage density bubble memory devices is confirmed.     

High-frequency propagation and failure of asymmetric half-disk field access magnetic bubble device elements

High-frequency propagation characteristics and failure modes in 14-μm period, 1.8-μm gap, asymmetric half-disk field-access device were studied using a high-speed optical sampling technique. Propagation elements as well as normal and hand gun corners and chevron structures were included. The operating bias margin at 1MHz, for a structure that had 1.2 MHz as highest possible frequency, was about half of the margin for frequencies of 200 kHz and below. The phase lag between the bubble leading wall and the instantaneous rotating field direction was nearly 90° as the bubble moved through the center of the element where the lag was the greatest. The peak velocity of the leading wall of 55 m/s and the trailing wall of 46 m/s is attributed to bubble interaction with the Permalloy structure creating a ∼125 Oe in-plane field that greatly increases the free bubble "saturation" velocity.     

New fabrication technique for magnetic bubble circuits with submicron dimensions

A new technique which permits the fabrication of submicrometer bubble propagation circuits has been described. Straight line patterns and contiguous zigzag patterns are combined with an appropriate registration to form bubble propagation patterns. The straight line pattern width corresponds to the gap width in the Permalloy bubble propagation circuits. By controlling the exposure time in fabricating straight line photoresist patterns, submicrometer pattern gaps are easily obtained using photomasks with 1 μm minimum features. The 4 μm period and 0.5 μm gap width permalloy circuits fabricated using this technique provide promising propagation characteristics for 1 μm bubbles: 60 Oe bias field margin at 60 Oe drive field and 25 Oe minimum propagation drive field.     

Analysis of Energy Quantization Effects on Single-Electron Transistor Circuits

In this paper, the effects of energy quantization on different single-electron transistor (SET) circuits (logic inverter, current-biased circuits, and hybrid MOS-SET circuits) are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantization mainly increases the Coulomb blockade area and Coulomb blockade oscillation periodicity, and thus, affects the SET circuit performance. A new model for the noise margin of the SET inverter is proposed, which includes the energy quantization effects. Using the noise margin as a metric, the robustness of the SET inverter is studied against the effects of energy quantization. An analytical expression is developed, which explicitly defines the maximum energy quantization (termed as “ quantization threshold”) that an SET inverter can withstand before its noise margin falls below a specified tolerance level. The effects of energy quantization are further studied for the current-biased negative differential resistance (NDR) circuit and hybrid SETMOS circuit. A new model for the conductance of NDR characteristics is also formulated that explains the energy quantization effects.      

A practical magnetic bubble AND-OR gate

The design and operation of a magnetic bubble AND-OR gate are reported. Operation at 100 kHz in a 25 Oe rotating field with 28.2 μm circuit periodicity was achieved with about 50 percent of the free bubble bias field margins. A transfer pulse is used to divert bubbles from a propagation path which delivers the AND output tO one which delivers the OR output. The transfer is defeated by the presence of a bubble in the appropriate cycle of the OR path. The AND bubble is then delayed by one cycle instead of being transferred. This frastrated transfer strategy was devised to circumvent the restrictive bias field limitations in the operation of previous logic circuits.     

台阶式中深孔延时加强松动爆破

通过山体爆破工程设计实例,介绍了台阶式布孔方法以及中深孔延时加强松动爆破施工的设计思路。提出了孔排距、炸药单耗、装药结构、起爆方式等爆破参数的确定方法。通过该工程中采用的孔内外联合延时非电起爆网路,达到了单孔单响的目的。测振数据表明,本次爆破施工有效地控制了爆破振动和飞石,取得了比较满意的爆破效果,对类似工程有一定的参考价值。     

台阶式中深孔延时加强松动爆破

通过山体爆破工程设计实例,介绍了台阶式布孔方法以及中深孔延时加强松动爆破施工的设计思路。提出了孔排距、炸药单耗、装药结构、起爆方式等爆破参数的确定方法。通过该工程中采用的孔内外联合延时非电起爆网路,达到了单孔单响的目的。测振数据表明,本次爆破施工有效地控制了爆破振动和飞石,取得了比较满意的爆破效果,对类似工程有一定的参考价值。     

A magnetic bubble passive time-slot interchanging gate

The design and operation of a magnetic bubble logic gate, able to perform the basic retardation operations for a magnetic bubble PCM time-slot interchanger,are reported. With this design no external current pulses are needed to perform those functions. With a 32 µ circuit periodicity and using (SmY)3(GaFe)5O12, bias field marginsashigh as 11.5% for the passive logic function are reported in a 25 Oe rotating field. Because no precautions are taken againsthard bubbles the unsuspicious range of frequency is limited to 20 kHz. Nearly no difference is seen in operating margins between low andhigh frequencies. Design rules are given that canlead to other bubble-to-bubble logic circuits with high operating margins.     

Characterization of magnetic bubble generators

Two types of magnetic bubble generators suitable for a field-access bubble memory have been tested at 1.00 kHz bit rate at in-plane rotating fields above 15 Oe. The bias field margins of the generators at 30 Oe rotating field are equal to or greater than those of loop propagation. Both designs are based on the principle of stretching and cutting seed bubbles circulating around a Permalloy disk. Functions of stretching, cutting and transferring in the generator sequence are accomplished either with Permalloy elements or pulsed current conductors. The operating conditions of the generators in terms of current pulse amplitudes, widths and phase angles are presented. Among the two designs, namely Permalloy-stretch and conductor-stretch generators, the latter has a wider phase-angle margin.     

AC-PDP放电特性参量及其测量

根据气体放电特性和交流等离子体显示器的放电单元结构,提出了AC-PDP等效电路模型和表征该模型的3个特性参量:击穿电压、气体维持放电的最小电压和放电单元电容比.通过分析放电过程,推导出最大维持电压、最小维持电压和维持电压余裕度的表达式.利用外接串联电容,提出一种放电特性参量的测量方法,并对12英寸PDP实验屏进行实际测量,获得了放电特性参量的测量结果.本文所提放电特性参量及其测量方法对AC-PDP显示屏的放电单元设计具有参考作用.     

High-energy Co-Cr thin films sputtered on glass disks forperpendicular recording

The authors have developed high-energy Co-Cr thin-film perpendicular recording media for rigid disks. They obtained high perpendicular coercivity (Hc⊥) exceeding 2000 Oe with Co-Cr films sputtered on glass disks. They examined recording characteristics obtained with double-layered media and single-pole heads. Readout voltages were proportional to Hc⊥ up to 2000 Oe and not dependent on saturation magnetization. The authors explain the experimental results using the hysteresis curve of the Co-Cr film and the permeance factor determined by the magnetic reluctance of the head and medium. Using a magnetic circuit model, they clarify the effect of the difference in the operating point on the hysteresis curves of rigid- and flexible-disk systems     

A study of particle arrangement in magnetic tapes

Particle dispersion and particle orientation in magnetic tapes are experimentally interpreted by using a large-scale model which consists of commercial carbon steel wires and a vinyl chloride binder. Results suggest that the particle orientation in the plane through the thickness of the coating was broader than that in the plane of coating. Even though the micromagnetic equations are not properly scaled, comparison of the large-scale model and γ-Fe2O3assemblies shows general agreement with respect to packing fraction. The coercive force of an isolated single γ-Fe2O3particle is found to be 420-440 Oe, compared to 380 Oe found for packing fractions used in commercial magnetic tapes.     

含电路模拟结构陷阱式吸波复合材料研究

研究了电路屏材质、电路屏尺寸、介质层电磁参数等对“陷阱”式结构吸波复合材料吸波性能的影响,总结了改变参数后吸波性能的变化规律。研究结果表明：通过合理的结构设计,使得吸波复合材料的吸波／承载综合性能得以提高。