一种P波段大功率空气带状线低通滤波器的设计

探讨了一种P波段大功率空气带状线低通滤波器的设计过程,提出了一种滤波器高阻抗线的布局方式,该设计可大大节省体积,且结构简单,加工、装配方便,可广泛用于微波中继通讯、卫星通讯、雷达技术、电子对抗及微波测量仪等设备中。     

跟踪和数据中继卫星系统的微波光调制技术研究

为了提高跟踪和数据中继卫星系统的传输容量,采用ITU推荐的Ka波段为星间微波链路的通信波段,跟踪和数据中继卫星之间采用激光链路.设计采用了激光链路透明传输微波信号的调制技术,包括直接微波信号调制和微波信号变频调制两种方案.通过分析和计算,得到了Ka波段微波光调制器的主要技术参数,论证了宽带LiNbO3行波调制器用于该系统的可行性,并讨论了两种方案的优缺点.     

视频预加重与去加重网络

目前,实际用于定向传送电视信号的调频制电视中继,例如,近距离实况转播用的移动式电视中继、远距离微波干线、电视广播卫星等传输电视信号的视频通道中,都广泛采用     

取样锁相固态源及其应用

一、概述随着微波技术的发展,微波技术的广泛应用于卫星、微波中继通讯、雷达,导弹制导以及测空系统,在这些尖端工程系统呈离不开微波讯号,尤其是微波本振源,微波本振源的讯号质量直接影响系统工程,例如,短基线于涉仪的接收机呈离不开高稳定高精度的微波本振源,良好的本振讯号,使得干涉仪系统获得性能良好的信息,具体来讲,确保系统具     

微波传输中无源中继技术的应用

本文对微波传输中无源中继技术的应用进行了研究，涉及微波传输路径的勘探、无源中继的应用场景、无源中继的方式等，以期对微波传输无源中继技术的应用有所帮助。     

中继卫星资源调度问题研究现状与展望

随着跟踪与数据中继卫星系统(TDRSS)的发展以及中继应用需求的增加,其资源调度成为决定系统性能的关键因素之一.分析了包括描述方法、活动与资源、约束条件等在内的中继卫星资源调度问题基本内涵,研究了目前中继卫星资源调度的数学模型和实现算法,比较了不同数学模型和实现算法的优缺点.针对未来卫星激光和微波链路联合组网的发展趋势,提出了基于多终端-多节点及基于资源故障的激光/微波混合链路中继卫星资源调度的基本方法.     

卫星地面站用的高功率行波管M7864

行波管作为宽频带微波放大器的应用正不断增长,特别是螺旋线型行波管已广泛的用作微波通讯中的中继增幅器输出管,使用表明,它可以作为通讯卫星的良好输出管。但是,对于卫星地面站发射机所用的输出管以及用于宽频带雷达或电子对抗设备的输出放大管来说(在这种情况下,要求脉冲功率为100千瓦以上,而在一个宽频带内要求连续波功率为1千瓦以上),由于行波管螺旋线慢波结构的热容     

7GHz频带微波直接中继无线电设备

在日本国内,电力用微波无线电路,用于数百公里的信息传输。其间中继站多数为无人站,且多设置在偏僻山区,为此,对中继站设备提出了无人维护、高度可靠、低功耗、小型轻量等要术。随着近年来半导体技术的发展,由于微波半导体、特别是砷化镓场效应晶体管性能的改善(因而使微波高增益大功率放大器易于制作),以及太阳能电池效率的提高,使微波直接中继方式在日本国内外重新受到重视。本文就基于这种技术动向而研制的7GHz频带微波直接中继无线设备作一介绍。     

超高频无线电中继通讯系统概况

前言无线电中继通讯近年来发展迅速。在科技先进的西方国家中都已建立了无线电中继通讯网,用于电话、电视、图像传真和数据的传送,不过目前世界上使用的无线电中继装置大多数都在千兆赫以上的频段,频率在一百至一千兆赫之间的超高频无线电中继系统比较少,特别是军用战术无线电中继系统。虽然如此,随着无线电电子技术的飞速进展,超高频军用无     

微波通信新发展与通用发射机技术研究

作为传输介质,微波有着其他通信方式无法比拟的优点.微波中继通信系统以及现有的微波宽带通信系统是已经商用的系统.从通信系统使用的信道传输频率来看,属于微波通信系统的有卫星通信系统、地面微波中继通信系统、本地多点分配接入系统(LMDS)等系统.这些微波通信系统基本上具有相同的发射机结构,本文将探讨通用的微波发射机技术.     

Cuber predistortion linearizer for relay equipment in 800 MHz band land mobile telephone system

New relay equipment for a tunnel relay system used in an 800 MHz band land mobile telephone network has been developed. Significant improvements in size and power consumption have been achieved using a predistortion (PD) circuit to compensate for third-order intermodulation (IM) distortion generated in the power amplifier. This predistortion circuit features a simple configuration and easy adjustment, as well as high distortion reduction performance. The circuit configuration is derived from an analysis based on a complex power series representation of input-output nonlinearities for microwave transistor amplifiers. This analysis shows that two kinds of nonlinearities, AM-AM and AM-PM conversions, are uniquely related through the third-order distortion phase, In addition, an automatically controlled predistortion system is introduced to establish an adjustment and maintenance-free compensator. Using the developed predistortion circuit, a stable distortion reduction of more than 20 dB per 25 MHz bandwidth has been attained.     

基于AlGaN/GaN HEMT的功率放大器的研究进展

介绍了几类常见的基于AlGaN／GaN HEMT的微波功率放大器；论述了制造微波功率放大器的两种关键工艺技术——倒装芯片集成(FC-IC)和共平面线(CPW)；分析了自行研制的微波功率放大器核心器件AlGaN／GaN HEMT的性能。     

AR“S”系列微波功率放大器在无线通信测试中的应用

文章介绍了微波功率放大器在无线通讯测试中的应用,详细阐述了可能对此类测试造成影响的3IM、IP3、IMD3等关键参数的原理及其测试方法,介绍了AR＂S＂系列微波功率放大器在此类测试中的独特设计和技术优势。     

HIgh-Power C-Band Multiple-IMPATT-Diode Amplifiers

The design considerations and performance characteristics of two high-power microwave reflection amplifiers that use multiple silicon IMPATT diodes are presented. The amplifiers employ microstrip hybrid-circuit-type power combiners to combine the individually matched IMPATT diodes. The first unit, a single-stage 4-diode amplifier, produced 8-W output with 6-dB gain while the second 12-diode amplifier gave 15.8-W output at about 9-dB gain. FM and AM noise added by these amplifiers has been measured with each amplifier driven to nearly full output. Use of microstrip hybrid-circuit power combiners appears to offer a simple and economical design approach for the implementation of microwave solid-state power amplifiers using multiple active devices.     

The 1976 S-MTT National Lectureship

Remarkable progress is being made in improving the performance of microwave solid-state devices used for signal processing and power generation. As a result, microwave solid-state amplifiers and oscillators are replacing low-noise and medium-power traveling-wave tubes (TWT's) and backward-wave oscillators (BWO's), and entirely new applications for microwave technologies are being created.     

Multifunction SAG process for high-yield, low-cost GaAs microwaveintegrated circuits

A new fully planar, multifunction refractory self-aligned gate (MSAG) technology suitable for the fabrication of GaAs small-signal and power microwave monolithic integrated circuits (MMICs) is demonstrated in a manufacturing environment. Data on the distribution of DC and RF performance and yield for pilot production of discrete FETs and MMICs are presented. The heart of the MSAG process is a planar, self-aligned gate FET. It uses a refractory TiWN Schottky gate and exhibits high performance for small-signal microwave, power microwave, and digital circuit applications. Lots with good wafer yields have demonstrated average chip yields on PCM good wafers of 45%, 49%, and 36% for 2-10-GHz distributed amplifiers, 1-W C-band power amplifiers, and 4-W power amplifiers, respectively     

Linearisation of microwave power amplifiers using active feedback networks

A new technique for linearising microwave power amplifiers is presented. Analytical and experimental results show that the intermodulation distortion in power amplifiers can be seriously reduced when active feedback networks are employed.     

Power Amplification of Microwave FM Communication Signals Using a Phase-Locked Voltage-Tuned Oscillator

An analog phase-locked oscillator is used as a power amplifier for FM communications signals. Intended service is for FDM telephone message service or television relay. The output power is generated in a varactor-tuned oscillator, which is synchronized with a weak input signal using a phase-lock loop. This involves a phase detector and a wide-band direct-coupled video amplifier whose output is applied to the tuning varactor. The paper is largely theoretical, relating the parameters of the feedback loop to the performance of the overall device. Explicit expressions are derived for the noise figure, the frequency response of the modulation characteristic, AM-PM conversion, and nonlinearity effects in terms of differential gain and intermodulation. In addition, two experimental models are described, together with certain measured data. The phase-lock method differs in many ways from multistage reflection amplifiers and appears to offer advantages for many applications. The device has adequate bandwidth and linearity for a single FDM-FM signal with 1800 or more channels, but must be tuned to the intended frequeucy. Tuning procedures are simple. High gain of 25-35 dB is obtainable in a single microwave "stage." Most of this gain may be associated with the functions of phase detection, video amplification, and VCO tuning. Of major importance, with respect to noise, is that the device is functionally equivalent to a high-gain low-noise microwave preamplifier followed by a low-gain power amplifier stage in which the preamplifier has the noise figure of the phase detector combined with the video amplifier, and the power stage has a noise figure appropriate to the class of power diode used. FM noise generation is substantially lower than in a high-gain reflection amplifier using the same class of microwave power diode throughout.     

Hybrid Integrated Lumped-Element Microwave Amplifiers

This paper describes the development of microwave lumped-element thin-film amplifiers. The basic design philosophy underlying lumped inductors and capacitors at microwave f requencies is reviewed, showing how Q's of 100 are achieved. A variety of tunable input, output, and interstage integrated lumped-element networks for transistor amplifiers were fabricated. The gain and efficiency of 2-GHz class-C operated transistors mounted in these circuits were comparable with the beat performance achieved by the same transistors in less Iossy coaxial circuits. The measured losses (1.2 dB) at 2 GHz were very close to those calculated using the design parameters. Single-stage amplifiers at 2 GHz achieved one watt of output power with 4 dB of gain. At somewhat lower power levels more than 6 dB of gain was achieved. The circuits allowed the operation of low-power level class-A amplifiers with over 13 dB of gain. Cascaded operation yielded more than 17 dB of gain with 0.8 watts of CW power. It is concluded that lumped elements can be fabricated by thin-film technology and will play an important role in microwave integrated circuits.