铀表面离子注入碳改性层抗腐蚀性研究

研究了碳在铀表面注入、梯度注入、反冲注入及离子束辅助沉积改性工艺。采用俄歇电子谱仪（AES）分析碳改性层沿深度方向的成分分布;采用X射线衍射仪（XRD）分析改性层的结构;通过动电位极化曲线、极限湿热腐蚀实验,比较腐蚀前后样品表面的形貌变化,对改性层抗腐蚀机理进行探索。研究结果表明：几种改性工艺均实现了碳离子在铀表面的注入或沉积,碳离子注入可在铀的表面形成碳化铀;45keV能量辅助轰击沉积碳、50keV能量及梯度能量碳离子注入改性层的抗腐蚀性能较优,先离子溅射沉积再碳离子辅助沉积形成的改性层的抗腐蚀性能最差。改性层腐蚀以点蚀为主,样品的腐蚀呈现在腐蚀点向基体和周围扩展,改性层致密无缺陷的区域则未发生腐蚀。     

Mutation-Screening in Xylanase-Producing Strains by Ion Implantation

With ion implantation (N+, energy 10 keV and dosage 1.56×1015 N+cm-2), a high xylanase-producing strain Aspergillus niger N212 was selected. Based on an orthogonal experiment, an optimal fermentation condition was designed for this high-yield strain. The suitable medium was composed of 8% corncob; 1.0% wheat bran; 0.1%TWEEN20; 0.5% (NH4)2SO4; 0.5%NaNO3; 0.5%FeSO4, 7.5 × 10-4; MnSO4·H2O, 2.5 × 10-4; ZnSO4, 2.0 × 10-4; CoCl2, 3.0 × 10-4. At present, under our experiment condition, xylanase activity of Aspergillus niger N212 reached a level of 600 IU/ml, almost increased by 100% in xylanase production and the time of yielding xylanase was largely reduced to 12 h at 28℃.     

Studies on Mutation Breeding of High-Yielding Xylanase Strains by Low-Energy Ion Beam Implantation

As a new mutagenetic method, low-energy ion implantation has been used widely in many research areas in recent years. In order to obtain some industrial strains with high xylanase yield, the wild type strain Aspergillus niger A3 was mutated by means of nitrogen ions implantation （10 keV, 2.6× 10^14 ～ 1.56 × 10^15 ions/cm^2） and a mutant N212 was isolated subsequently. However, it was found that the initial screening means of the high-yielding xylanase strains such as transparent halos was unfit for first screening. Compared with that of the wild type strain, xylanase production of the mutant N212 was increased from 320 IU/ml to 610 IU/ml, and the optimum fermentation temperature was increased from 28 ℃ to 30 ℃.     

Study on the Variation of the Distant Crossing Rice by Ion Beam Implantation

In this paper, the following contents including the original receptor EI213 and other two control materials, RAPD polymorphism, photosynthetic efficiency, and the number of vascular bundles of the first internodes below the peduncle have been studied for the eight F7 transgenic lines obtained from ion beam implantation. The results showed that there was a significant variation in genomes of maize-rice line, compared with the receptor EI213, after the total exogenous maize DNA was introduced into EI213. The number of the vascular bundles of maize-rice progeny‘s lines was obviously much larger than those of the original receptor EI213 and other two controls GER-3 and MH63, and along with the photosynthetic efficiency of maize-rice progeny‘s lines being gone up. Moreover, the parenchyma cells around the vascular bundles of the transgenic lines became much larger in number and in size than those around the controls. All these indicated that the maize-rice progeny‘s lines are really different from and superior to the receptor and the controls. It is a novel and useful way to apply ion beam implantation in transferring DNA from C4 plant maize into C3 plant rice.     

Screening of Bioflocculant-Producing Strain by Ion Implantation and Flocculating Characteristics of Bioflocculants

A bioflocculant-producing mutator strain, NIM-192, was screened out through nitrogen ion implanting into F J-7 strain. The results showed that NIM-192 had good genetic stability and high flocculating activity, and the flocculating rate increased by 34.26% than that of the original. Sucrose, complex nitrogen source contained yeast extract, urea and pH 7.0～ 9.0 were chosen as the best carbon source, nitrogen source and initial solution pH for bioflocculant production, respectively. The bioflocculant kept high and stable flocculating activity at alkalinous reaction mixture with a pH beyond 7.0, while the flocculating activity was remarkably reduced when the reaction pH was lower than 7.0. Addition of many cations could obviously increase the flocculating rate, among which Ca^2＋ demonstrated the best effect. The bioflocculant had very strong acid-base stability and thermo-stability.The flocculating rate kept over 86% when pH of the bioflocculant was in a range of 3.0 ～ 12.0, and the change of flocculating activity was not great when heated at 100℃ for 60 rain.     

Enhancement of Gongronella sp. JG Chitosanase Production by Ion Beam Implantation

Gongronella sp. JG was a fungal strain which expressed extracellular chitosanase of about 800 U/L during its growth in production medium. To improve its enzyme production, low energy N＋ implantation was employed to mutate spores of JG. The implantation condition was optimized and the parameters of 15 keV and 60 × breeding experiments. A mutant designated as SG 2.6 × 10^13 ions/cm^2 were selected for further was obtained. It showed increased chitosanase production （1800 U/L） and shortened cultivation period （from 72 h to 60 h）. Five-generation cultivation of SG indicated that its chitosanase production was stable at about 1800 U/L.     

离子注入玻璃

离子注入和离子束分析技术在半导体和金属改性中已获得广泛应用,近年来又开始应用于绝缘体。在1981年第一届绝缘体辐照效应国际会议(REI-81)上,美国Sandia实验室Arnold和意大利Chinellato等发表离子注入玻璃效应的初步研究。Mazzoldi曾应用核反应分析对玻璃辐照效应进行了详细研究。 带电粒子辐照玻璃引起网状损伤并改变了表面化学成分。钠玻璃经离子注入后产生钠离子迁移,Na迁移有两种不同机构,在低质量离子辐照时以电子阻止本领为主,此时钠受到和     

Creation of High-Yield Polyhydroxyalkanoates Engineered Strains by Low Energy Ion Implantation

Polyhydroxyalkanoates （PHAs）, as a candidate for biodegradable plastic materials, can be synthesized by numerous microorganisms. However, as its production cost is high in comparison with those of chemically synthesized plastics, a lot of research has been focused on the efficient production of PHAs using different methods. In the present study, the mutation effects of PHAs production in strain pCB4 were investigated with implantation of low energy ions. It was found that under the implantation conditions of 7.8×10^14 N^＋/cm^2 at 10 keV, a high-yield PHAs strain with high genetic stability was generated from many mutants. After optimizing its fermentation conditions, the biomass, PHAs concentration and PHAs content of pCBH4 reached 2.26 g/L, 1.81 g/L, and 80.08% respectively, whereas its wild type controls were about 1.24 g/L, 0.61 g/L, and 49.20%. Moreover, the main constituent of PHAs was identified as poly-3-hydroxybutyrates （PHB） in the mutant stain and the yield of this compound was increased up to 41.33% in contrast to that of 27.78% in the wild type strain.     

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

In order to generate a mutant of Bacillus subtilis with enhanced surface activity through low energy nitrogen ion beam implantation, the effects of energy and dose of ions implanted were studied. The morphological changes in the bacteria were observed by scanning electron microscope （SEM）. The optimum condition of ions implantation, 20 keV of energy and 2.6 × 10^15N^＋/cm^2 in dose, was determined. A mutant, B.s-E-8 was obtained, whose surface activity of 50-fold and 100-fold diluted cell-free Landy medium was as 5.6-fold and 17.4-fold as the wild strain. The microbial growth and biosurfactant production of both the mutant and the wild strain were compared. After purified by ultrafiltration and SOURCE 15PHE, the biosurfactant was determined to be a complex of surfactin family through analysis of electrospray ionization mass spectrum （ESI/MS） and there was an interesting finding that after the ion beam implantation the intensities of the components were different from the wild type strain.     

Effects of Annealing on the Structural and Photoluminescent Properties of Ag-Doped ZnO Nanowires Prepared by Ion Implantation

ZnO nanowires deposited on Si substrates were prepared by thermal evaporation of a mixture of ZnO and carbon powder. Ag ions with an energy of 63 keV and a dose of 5×1015 ions/cm-2 were implanted into the as-prepared ZnO nanowires. After ion implantation, the Ag-implanted ZnO nanowires were annealed in air at different temperatures from 600℃ to 1000℃. Effects of ion implantation and thermal annealing on the structural and photoluminescent (PL) properties of the ZnO nanowires were investigated by transmission electron microscopy (TEM), selected area energy dispersive X-ray spectroscopy (SAEDX), X-ray diffraction (XRD), and fluorescence spectrophotometry. TEM, HR-TEM, and SAEDX analyses demonstrated that efficient doping of Ag was achieved by ion implantation and the subsequent annealing process. XRD patterns revealed that the hexagonal wurtzite structure of ZnO nanowires was maintained after ion implantation. Photoluminescent emissions of ZnO nanowires were decreased significantly by Ag implantation but could be recovered by thermal annealing. The mechanism of the influence of ion implantation and annealing on the PL intensity was assessed.     

In Situ TEM Observation of Growth Process of Zirconium Hydride in Zircaloy-4 during Hydrogen Ion Implantation

In situ observation during hydrogen ion implantation was performed with a transmission electron microscope installed in an ion accelerator to investigate the growth process of Zr hydride in Zircaloy-4. To clarify the effect of radiation damage, some samples were irradiated with 4 MeV Ni³⁺ ions prior to hydrogen implantation. Growth processes of Zr hydrides accompanying the formation of dislocations were observed. The crystallographic relationship between the Zr matrix and Zr hydrides was identical with that found in previous studies: inter- and intragranular hydrides exhibiting a tendency to grow in the (112-0) direction. This growth can be attributed to a shear mechanism in which there are partial dislocations along basal planes. In specimens preirradiated with Ni ions, the growth rate of hydrides was suppressed, but the growth direction was not affected by radiation defects. It was also confirmed that the black spots induced by Ni³⁺ ion irradiation grew during hydrogen ion implantation, suggesting the formation of hydrides at the defects.     

Mutagenic Effects of BM302：GO112 Induced by Low-Energy Ion Beam Implantation

Mutant strains of GO112 and BM302 with a high 2-keto-L-gulonic acid （2KLG） transformation rate induced by ion beam implantation were separately and combinatorially compared with the original strains GO29 and BM80 to study the mutagenic effects of ion beam implantation. Both the sole GOl12 and mixed BM302：GOl12 demonstrated improved SNDH activity and 2KLG yield compared to the original strains. The mutant combinations of BM302：GOl12 showed a longer stationary phase and higher biomass than BM80：GO29. The mutant BM302 exhibited a stronger capacity to maintain a stable pH environment at mixed fermentation with Gluconobacter oxydans （G. oxydans） for 2KLG transformation and facilitated the growth of G. oxydans compared with the original strain BM80. The promotive capacity to L-sorbosone dehydrogenase （L-SNDH） from the supernate of BM302 was 1.6-fold higher than that of BM80. Genes encoded SNDH in GO29 and GOl12 were amplified and sequenced, and mutations including three transitions （CG →TA, CG →TA, GC → AT） and one transversion （AT→ TA） were confirmed from GO29 to GOl12. The corresponding amino acid was changed as Leu →Phe, Arg → Gln and Asn → Lys.     

Study on the Properties of TiN Coatings on Previously Ion-Implanted Pure Magnesium Surface by MEVVA Ion Implantation

A metal vapor vacuum arc （MEVVA） is used in ion implantation for substrate preparation before the deposition process which would ensure the improvement of mechanical properties of the coating. Ti ion is implanted into pure magnesium surface by MEVVA implanter operated with a modified cathode. Implanting energy is kept at 45 keV and dose is set at 3 ×10^17 cm^-2. TiN coatings are deposited by magnetically filtered vacuum-arc plasma source on unimplanted and previously implanted substrates. Microstructure and phase composition are analysed using scanning electron microscopy （SEM） and X-ray diffraction （XRD）. The property of corrosion resistance of TiN coatings was studied by CS300P electrochemistry-corrosion workstation, and the main impact factor of the corrosion resistance was also analyzed.     

碳及碳团簇负离子注入硅橡胶细胞相容性研究

通过在GIC4117串列加速器前注入器加装注入靶架以及扫描系统,建立了低能负离子注入平台,实现具有"Charge-up free"优点的负离子以及团簇负离子的注入,从而进行了碳及碳团簇负离子注入硅橡胶细胞相容性研究。水接触角测量表明,随着注入剂量增大到3×1015 cm-2,材料表面的水接触角从108.7°减小到103.1°,表面亲水性得到改善。XPS测试表明,随着注入剂量的增加,样品中碳含量逐渐减小,而氧和氮含量逐渐增加。基于上述结果对负离子注入硅橡胶细胞相容性改善的机制进行了讨论,最后在样品上进行了细胞培养实验。结果表明,负离子注入法是一种简单、有效提升硅橡胶细胞相容性的方法。     

注入N离子改性的Ti-2Al-2.5Zr合金表面性能研究

往Ti-2Al-2.5Zr合金中注入能量为75 keV的N离子,注入剂量为3×1017/cm2和8×1017/cm2。75 keV N离子在Ti-2Al-2.5Zr合金的射程,借助TRIM 96程序计算的结果为1.2×10-7m。测试结果表明,Ti-2Al-2.5Zr合金的显微硬度随N离子注量的增加而升高,当注量为3×1017/cm2和8×1017/cm2时,Ti-2Al-2.5Zr合金的硬度分别升高260％和340％。注入后的样品用X射线衍射法及光电子能谱法进行分析。XRD衍射谱分析表明,Ti-2Al-2.5Zr合金有TiN新相生成。TiN相的生成被认为是Ti-2Al-2.5Zr合金显微硬度增加的主要原因。     

Bioeffects of Low Energy Ion Beam Implantation： DNA Damage, Mutation and Gene Transter

Low-energy ion beam implantation （10 - 200 keV） has been proved to have a wide range of biological effects and is broadly used in the breeding of crops and micro-organisms.To understand its mechanisms better and facilitate its applications, the developments in the bioeffects of low energy ion beam implantation in the past twenty years are summarized in this paper.     

Breeding of Coenzyme Q10 Produced Strain by Low-Energy Ion Implantation and Optimization of Coenzyme Q10 Fermentation

In order to increase the production efficiency of coenzyme Q10, the original strain Agrobacterium tumefaciens ATCC 4452 was mutated by means of Nitrogen ions implantation. A mutant strain, ATX 12, with high contents of coenzyme Q10 was selected. Subsequently, the conditions such as carbohydrate concentration, nitrogen source concentration, inoculum＇s size, seed age, aeration and temperature which might affect the production of CoQ10 were investigated in detail. Under optimal conditions, the maximum concentration of the intracellular CoQ10 reached 200.3 mg/L after 80 h fed-batch fermentation, about 245% increasing in CoQ10 production after ion implantation, compared to the original strain.     

Mutation-Screening of Pleurotus Ferulae with High Temperature Tolerance by Nitrogen Ion Implantation

In order to obtain Pleurotus ferulae with high temperature tolerance, conidiophores of wild type strain ACK were implanted with nitrogen ions in energy of 5 -15 keV and dose of 1.5×10^15 - 1.5 × 10^16 cm^-2, and a mutant CGMCC1763 was isolated subsequently through thermotolerant screening method. It was found that during riper period the surface layer mycelium of the mutant in mushroom bag wasn＇t aging neither grew tegument even above 30℃. The mycelium endurable temperature of the mutant was increased by 5℃ compared to that of the wild type strain. The fruiting bodies growth temperature of the mutant was 18 -22℃ in daytime and 8 -14℃ at night. The highest growth temperature of fruiting bodies of the mutant was increased about 7℃ w.r.t, that of original strain. Through three generations investigations, it was found that the mutant CGMCC1763 was stable with high temperature tolerance.     

Ion Implantation Hampers Pollen Tube Growth and Disrupts Actin Cytoskeleton Organization in Pollen Tubes of Pinus thunbergii

Pollen grains of Pinus thunbergii Parl. （Japanese black pine） were implanted with 30 keV nitrogen ion beams and the effects of nitrogen ion implantation on pollen tube growth in vitro and the organization of actin cytoskeleton in the pollen tube cell were investigated using a confocal laser scanning microscope after fluorescence labeling. Treatment with ion implantation significantly blocked pollen tube growth. Confocal microscopy showed that ion implantation disrupted actin filament cytoskeleton organization in the pollen tube. It was found that there was a distinct correlation between the inhibition of pollen tube growth and the disruption of actin cytoskeleton organization, indicating that an intact actin cytoskeleton is essential for continuous pollen tube elongation in Pinus thunbergii. Although the detailed mechanism for the ion-implantation-induced bioeffect still remains to be elucidated, the present study assumes that the cytoskeleton system in pollen grains may provide a key target in response to ion beam implantation and is involved in mediating certain subsequent cytological changes.     

Optimization of L-lactic Acid Production of Rhizopus Oryzae Mutant RLC41-6 by Ion Beam Implantation at Low-Energy

In order to obtain an industrial strain with a higher L（＋）-lactic acid yield, the strain Rhizopus oryzae RF3608 was mutated by means of nitrogen ion beam implantation and the mutant strain RLC41-6 was isolated. Under optimal conditions the yield of L（＋）-lactic acid produced in a shake-flask reached 133 g/L - 137 g/L after 36 h cultivation, indicating that the conversion rate based on glucose was as high as 88% - 91% and the productivity was 3.75 g/L.h. It was almost a 115% increase in lactic acid production compared with the original strain RF3608.