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C. P. Tigges J. E. Schirber H. P. Hjalmarson I. J. Fritz L. R. Dawson 《Solid-state electronics》1989,32(12):1509-1512
The energy relaxation rate of light in-plane holes in InAs.15Sb.85/InSb quantum wells has been measured using a Shubnikov-de Haas technique. In this Type II system, the holes reside in the InSb layers; strain reverses the heavy-light hole ordering and thus light holes are the charge carriers. The samples consist of 20 to 100 InAs.15Sb.85/InSb periods 100Å/200Å thick. The InAsSb barriers are doped with Be. The total carrier concentration p ≈ 1×1011 cm−2 is obtained from Hall data. Shubnikov-de Haas oscillation amplitudes are measured and used to determine the light hole temperature for a given applied power. The steady state power per carrier is equated to the energy relaxation rate to determine the carrier temperature TH. The measured rate for low electric fields is proportional to THn-TLn with n ≈ 3.2 and 2.5 for two different samples. These data are compared with theory and experiment for light holes in InGaAs/GaAs quantum wells. 相似文献
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We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (Te − Tl), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively. 相似文献