H2+和D2+谐波强度与波长的关系

为了了解H₂+及其同位素分子谐波光谱效率与激光波长之间的关系,采用求解2维薛定谔方程的方法,理论研究了600nm~1600nm激光波长下H₂+和D₂+谐波光谱强度随波长的变化关系。结果表明,光谱强度随波长增大而减小;在短波长区间,H₂+光谱强度减小的倍率要大于D₂+,在长波长区间,H₂+光谱强度减小的倍率要小于D₂+;此外,在弱光强下,H₂+光谱强度总是大于D₂+, 在强光强下,H₂+光谱强度在短波长区间小于D₂+, 而其在长波长区间大于D₂+; 核间距延伸和电荷共振增强电离在H₂+和D₂+谐波光谱强度变化上起到主要作用。这一结果对分子谐波调控是有帮助的。     

The importance of three-body processes to reaction kinetics at atmospheric pressures--I: Archetype reactions of He species with N2

This paper concerns a reexamination of the significance of three-body effects that enhance the reaction rates for energy transfer and for ion-molecule reactions that occur in atmospheric pressures of inert gas diluent, even in the absence of any formation of product clusters. The archetype case of the reactions of the energy-storing species of helium with molecular nitrogen has been studied in two different preionized discharge systems capable of operation to 6 atm pressure. Earlier results suggesting the critical importance to kinetic modeling of three-body channels were confirmed in this work. The termolecular rate coefficient for the particular reaction He+2+ N2+ He was concluded to be13.1 times 10^{-30}cm⁶/s with no evidence of saturation up to pressures of 6.0 atm. Effective rates of reaction were observed to be increased by this channel to a value three times in excess of the Langevin rate that has been traditionally considered to be an upper limit on the overall rate of reaction. The close conformity to the oldere-beam results in this test case implies that the general conclusion of those studies must be seriously considered. In 95 percent of the cases of the reactions of inert gas ions with other species diluted in inert gases at atmospheric pressures it must be expected that rates can greatly exceed the traditional bimolecular values and can even exceed the Langevin rates by substantial amounts.     

The importance of three-body processes to reaction kinetics at atmospheric pressures--II: Occlusive effects of discharge morphology

This work reports the results of a study of the extent to which variations in the spatial uniformity of the energy deposition in an atmospheric pressure plasma can alter the appearance of the time-dependent evolution of the reactive species. It was found in the afterglows of plasmas produced in atmospheric pressure of helium containing small admixtures of N2that the relative importance of ion and neutral chemistries varied substantially over the physical dimensions. The situation was further complicated by modulations that seemed to be a consequence of the heating of the afterglow by residual currents oscillating in the mismatched Blumlein. Nevertheless, the kinetics could still be described by the relatively straightforward model developed in the preceding paper.     

红外激光与远紫外激光场驱动H2+辐射谐波

为了了解H₂+谐波辐射的过程,采用数值求解非玻恩-奥本海默近似薛定谔方程的方法,理论研究了H₂+在10fs/800nm红外激光与6fs/30nm远紫外激光驱动下谐波辐射的特点。结果表明,谐波辐射的贡献主要来源于拉比振荡、多光子共振电离、电荷共振增强电离以及离解态电离;随着远紫外光的加入,谐波光谱呈现能量间隔为远紫外光子能量的多重谐波截止结构;当远紫外光与红外激光的延迟时间大于零或小于零时,谐波光谱呈现红移和蓝移的现象。该研究对理解分子谐波辐射过程是有帮助的。     

A novel process to form cobalt silicided p+ poly-Sigates by BF2+ implantation into bilayeredCoSi/a-Si films and subsequent anneal

A novel process that implants BF₂⁺ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p ⁺ poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide     

Suppression of cobalt silicide agglomeration using nitrogen(N2+) implantation

In this paper, the effects of nitrogen coimplantation with boron into p⁺-poly gate in PMOSFETs on the agglomeration effects of CoSi₂ are studied. The thermal stability of CoSi₂/poly-Si stacked layers can be significantly improved by using nitrogen implantation. Samples with 40-nm cobalt silicide (CoSi ₂) on 210-nm poly-Si implanted by 2×10¹⁵/cm ² N₂⁺ are thermally stable above 950°C for 30 s in N₂ ambient. If the dose of nitrogen is increased up to 6×10¹⁵/cm², the sheet resistance of CoSi₂ film is not increased at all, and TEM photographs show that the agglomeration of CoSi₂ film is completely suppressed     

Various effects of silicidation on shallow p+ junctionsformed by BF2+ implantation into thin poly-Sifilms on Si substrates

Various effects of silicidation on shallow p⁺ n junctions formed by the scheme that implants BF₂⁺ ions into thin poly-Si films on Si substrates are described. A post-Ni silicidation just slightly improves the preformed junctions of the annealed sample. However, as the sample is first deposited with thin Ni films after the implantation and then annealed, the resulting junctions are much better than the preformed ones. Moreover, as the sample is deposited with Ti films, the resultant junctions are just slightly better the preformed ones     

NaCl(OH-):(F2+)H色心激光的研究

文中报道了低温红外连续NaCl(OH-):(F2+)H色心激光的研究结果。当泵浦功率为4.5W,辅助光功率为34.5mW时,输出功率大于250mW,峰值波长为1.57μm。为保证色心激光稳定运转,必须要有辅助光。     

偏振光谱法观察Na_2A~1∑_u~+～b~3Ⅱ_u微扰能级的超精细结构

在分子光谱和量子化学领域中，Na_2分子的结构和光谱的重要性是众所周知的。对于Na_2单重态的激光光谱研究已经得到了大量的结果。相比之下，Na_2三重态的研究则困难得多，因为从其基态（？）到三重态的跃迁是偶极禁戒的。尽管如此，人们还是找到了直接研究三重态的途径，这就是通过（？）微扰能级观察三重态。     

氟化锂晶体F2心光致电离及F2和F2+心激光特性研究

室温下利用337nm脉冲激光照射着色LiF晶体,有效地将F2心转变成F2+心,其浓度高于1016cm-3。利用消象散三镜折叠腔,研究了LiF晶体F2和F2+心激光特性。实际工作表明,利用氮分子激光作为处理光束,可获得较长时间稳定的F2+心激光输出。     

The recrystalization of BF2+-implanted silicon by light-flash annealing

SEM, TEM and optical metallography have been applied to investigate the microstructural changes of the BF₂⁺-implanted silicon annealed by the intense irradiation of a flash tube. Slip traces and electron diffraction patterns as revealed on the annealed wafers clearly indicate epitaxial regrowth from liquid to solid phase after flash annealing with energy density higher than 20 J/cm². A strong-diffusion model has been used to solve the one-dimensional heat conduction of the flash irradiation on the semiconductor. The calculated threshold energy for the temperature of the surface to reach the melting point agrees well with experimental values.     

CaSi2O2N2:Ce3+/Eu2+荧光粉的发光性能研究

采用高温固相反应法制备了CaSi₂O₂N₂:C e³⁺/Eu ²⁺荧光粉,研究了分别掺杂Ce³⁺、Eu²⁺及Ce³⁺/Eu²⁺共掺 杂时荧光粉 的发光特性。CaSi₂O₂N₂:Ce³⁺在333 nm激发下得到宽波段的发射谱,发射峰 位于395nm,随着Ce³⁺浓度的增大,发 射波长出现明显的红移,猝灭浓度为1mol%。CaSi₂O₂N₂:Eu²⁺在397nm激发下得到峰值位于540nm处的宽波段发射谱, 猝灭浓度为1mol%。对于Ca0.99－2xSi₂O₂N₂:xCe ³⁺,xLi⁺,0.01Eu²⁺荧光粉,在333nm激发下,位于395nm处的发射峰十分微 弱,在540nm处有宽带发射,随着Ce³⁺浓度增大,位于540nm处的Eu²⁺的特征 发射显著增强。对于Ca0.98－ySi₂O₂N₂: 0.01Ce³⁺,0.01Li⁺,yEu²⁺荧光粉,在激发光波长 为333nm,Eu²⁺浓度较低时,可以观察到两个发射带,峰值分 别位于395nm及540nm,随着Eu²⁺浓度增加,位于395nm的 发射强度一直减小,而540nm处的发射强度先增加后减小,猝灭浓 度为0.4mol%。证实了Ce³⁺,Eu²⁺之间发生了有效的能 量传递。计算出Ce 3+、Eu²⁺之间能量传递的效率ηT,在Eu²⁺浓 度为 1mol%时ηT趋于饱和,达到97.7%。通过计算,得到Ce3+ 与Eu²⁺之间的能量传递方式为电偶极-电偶极相互作用。     

The reverse anneal of junction characteristics in forming shallow p+-n junction by BF2+ implantation intothin Co films on Si substrate

Silicided shallow p⁺-n junctions, formed by BF₂ ⁺ implantation into thin Co films on Si substrates and subsequently annealed, showed a reverse anneal of junction characteristics in the temperature range between 550 and 600°C. The reverse anneal means behavior showing degradation of the considered parameters with increasing annealing temperature. A higher implant dosage caused a more distinct reverse anneal. The reverse anneal of electrical characteristics was associated with the reverse anneal of substitutional boron. A shallow p⁺-n junction with a leakage current density lower than 3 nA/cm₂, a forward ideality factor of better than 1.01, and a junction depth of about 0.1 μm was achieved by just a 550°C anneal     

Fluorescence enhancement of single-phase red-blue emitting Ba3MgSi2O8:Eu2+,Mn2+ phosphors via Dy3+ addition for plant cultivation

Fluorescence enhancement of red and blue concurrently emitting Ba₃MgSi₂O₈:Eu²⁺,Mn²⁺ phosphors for plant cultivation has been investigated by Dy³⁺ addition. The Ba₃MgSi₂O₈:Eu²⁺,Mn²⁺,Dy³⁺(BMS-EMD) phosphors have two-color emissions at the wavelength peak values of 437 nm and 620 nm at the excitation of 350 nm. The two emission bands are coincident with the absorption spectrum for photosynthesis of plants. An obvious enhancement effect has been observed upon addition of Dy³⁺ with amount of 0.03 mol%, in which the intensities of both blue and red bands reach a maximum. The origin of red and blue emission bands is analysed. The photochromic parameters of the samples at the nearly UV excitation are tested. This fluoresence enhancement is of great significance for special solid state lighting equipment used in plant cultivation. This work has been supported by National Natural Science Foundation of China (Grant No 50872091) and the Natural Science Foundation of Tianjin, China (06YFJMJC02300, 06TXTJJC14602).     

NO分子Α~2Σ~+和Ε~2Σ~+能级的LIF光谱

本文报道了单光子激发NO分子A~2∑~+(υ=0)能级的LIF光谱研究,其观测到A~2Σ~+(o=0)→X~2Ⅱ(1″=0～11)跃迁的12个振动带。运用两步激发的方法,研究了E~2Σ~+(扣=0)能级激发后在紫外波段的LIF光谱,明显测量到了E~2Σ~+(1=0)能级直接跃迁到基态X~2Ⅱ的荧光振动带。     

Formation kinetics of the triatomic excimer Ar2F*

Detailed fluorescence measurements of electron beam-excited high pressure mixtures of Ar/F2and Ar/NF3have been made in order to investigate the processes leading to the formation of Ar2F*. Three-body collisional quenching of ArF* has been identified as a major formation mechanism. The third-order rate constant for this reaction has been measured to bek_{1} = (1.2 pm 0.2) times 10^{-30}cm⁶. s^-1. In addition quenching rates for collisional de-excitation of Ar2F* by argon and the fluoride donors NF3and F2have been determined. The radiative lifetime has been measured as 219 ± 15 ns. The possible formation of Ar2F* from long-lived excited argon neutrals when using intense excitation densities and low-donor pressures is also briefly discussed.     

Impact of nitrogen (N2+) implantation intopolysilicon gate on thermal stability of cobalt silicide formed onpolysilicon gate

A novel process which uses N₂⁺ implantation into polysilicon gates to suppress the agglomeration of CoSi₂ in polycide gated MOS devices is presented. The thermal stability of CoSi₂/polysilicon stacked layers can be dramatically improved by using N₂⁺ implantation into polysilicon. The sheet resistance of the samples without N₂⁺ implantation starts to increase after 875°C RTA for 30 s, while the sheet resistance of CoSi₂ film is not increased at all after 950 and 1000°C RTA for 30 s if the dose of nitrogen is increased up to 2×10¹⁵ cm^-2 and 6×10¹⁵ cm², respectively, and TEM photographs show that the agglomeration of CoSi₂ film is completely suppressed. It is found that the transformation to CoSi₂ from CoSi is impeded by N₂⁺ implantation such that the grain size of CoSi₂ with N₂⁺ implantation is much smaller than that without N₂⁺ implantation. As a result, the thermal stability of CoSi₂ is significantly improved by N₂⁺ implantation into polysilicon     

磷酸盐玻璃中稀土离子Ce~(3 )、Tb~(3 )、Er~(3 )和Tm~(3 )的能量转移和敏化过程的研究

本文报道了磷酸盐玻璃中Tb~(3 )和Ce~(3 )的浓度猝灭效应。在KrF激光(248毫微米,10毫微秒)激发下,测出磷酸盐玻璃中不同浓度Ce~(3 )或Tb~(3 )离子的荧光寿命。着重讨论了磷酸盐玻璃中Ce~(3 )→Tb~(3 )、Er~(3 )和Tm~(3 )的能量转移和敏化过程。     

用于白光LED的红色荧光粉SrAl2Si2O8:Eu3+,Li+的制备和发光性能研究

采用高温固相法制备了Sr1－x Al₂Si₂O₈:Eu³⁺ x,Li⁺0.03系列红色荧光粉,研究了试样的晶体 结构和发光性质。合成的试样均为纯相的SrAl₂Si₂O₈晶体,单斜晶系,空间群为 C2/m(12); Eu³⁺和Li⁺进入基质晶体中,使得SrAl₂Si₂O₈晶胞参数a、b和c 略微减小,只引起了晶体结构轻 微的畸变。试样的激发光谱由位于220~580nm波长的一个宽激发带 和一组锐线峰构成,其中 395nm波长处Eu³⁺的⁷F₀→⁵L₆激发峰的强度最强。发射光谱位于550~750nm波长范围内呈现多 条锐 线发射,其中595nm和615nm波长处发射峰最 强,分别归属于Eu³⁺的⁵D₀→⁷F₁磁偶极跃迁和⁵D ₀→⁷F₂电偶极跃迁。研究了Eu³⁺浓度对荧光粉发光性能的影响, 结果表明,随着Eu³⁺浓度的增 加,发光强度先增加后减小,最佳掺杂量为0.03,而对试样的色坐标 几乎没有影响;该系列荧光粉浓度淬灭机理为电偶极–电偶极(d-d)相互作用。     

Ultrashallow junctions for ULSI using As2+implantation and rapid thermal anneal

Using As₂⁺ ion implantation and rapid thermal anneal, 40-nm n⁺-p junctions are realized. The junction formed with p^- substrate shows very low leakage current (<0.5 nA/cm²) up to 2-V reverse bias. The introduction of a heavily doped (10¹⁸ cm^-3 level) p region generates a significantly higher leakage current due to the onset of band-to-band tunneling. Using varied geometry devices with a given area, the major tunneling current is shown to be confined in the perimeter of the device, and a method to suppress this leakage is suggested