Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12

Ferroelectric thin films of bismuth-containing layered perovskite Bi₄Ti₃O₁₂ have been fabricated by a metalorganic decomposition (MOD) method. Crack-free and crystalline films of ∼5000 Å thickness have been deposited on Pt/Ti/SiO₂/Si substrates. Different heat treatments have been studied to investigate the nucleation and growth of perovskite Bi₄Ti₃O₁₂ crystallites. If the same composition and final annealing temperature are used, films with different orientations are obtained by different heating schedules. These films show a large anisotropy in ferroelectric properties. Theoretical considerations are presented to suggest that nucleation control is responsible for texture and grain-size evolution. Moreover, the origin of the ferroelectric anisotropy is rooted in the two-dimensional nature of layered polarization.     

Fabrication of Grain-Oriented PbBi2Nb2O9

This paper describes a process for the fabrication of grain-oriented PbBi₂Nb₂O₉ ceramics. A molten salt technique was used to synthesize crystallites of PbBi₂Nb₂O₉ with a high degree of shape anisotropy. Tape casting and subsequent uniaxial hot-pressing resulted in ceramics with grain orientation of >90% with densities >96% theoretical.     

Sol-Gel Route to Ferroelectric Layer-Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films

Precursors for layer-structured perovskite thin films of SrBi₂Ta₂O₉ (SBT) and SrBi₂Nb₂O₉ (SBN) were prepared by the reactions of a strontium-bismuth double methoxyethoxide and tantalum or niobium methoxyethoxide in methoxyethanol, followed by partial hydrolysis. Several spectroscopic techniques, such as ¹H-, ¹³C-, and ⁹³Nb-NMR (nuclear magnetic resonance), and Fourier-transform infrared spectroscopy were used to analyze the arrangement of the metals and oxygen in the precursor molecules. The precursors contained Sr-O-M (where M is Ta or Nb) bonds (i.e., a strontium is connected to two MO₆ octahedra) and Sr-O-Bi bonds with a bismuth atom bonded to the oxygens of the MO₆ octahedron. The arrangement of metals and oxygens was considered to be similar to the layer-structured perovskite crystal sublattice. As a result, the sol-gel-derived SBT thin films crystallized, by rapid thermal annealing in an oxygen atmosphere below 550°C, and they exhibited preferred (115) orientation. The crystallinity improved and the crystallite size increased with temperature up to 700°C. In the case of SBN thin films, a low heating rate (2°C/min) was necessary for the control of the crystallographic (115) orientation, whereas a rate of 200°C/s (rapid thermal annealing) produced films that exhibited c -axis orientation. The (115) SBT thin film, heated to 700°C, exhibited improved ferroelectric properties.     

Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part III, SrBi2Nb2O9 and c-Oriented Bi4Ti3O12 Template

Randomly and c-oriented SrBi₂Nb₂O₉ thin films have been obtained by a metalorganic decomposition (MOD) method using a highly c-oriented Bi₄Ti₃O₁₂ layer as a template. This templating procedure is generally applicable to other layered perovskites, and it has the advantage of lowering the temperature for crystallization and texture selection for these thin films. Moreover, the c-oriented Bi₄Ti₃O₁₂ template can serve as a bottom electrode at the same time. Ferroelectric and dielectric properties measured for SrBi₂Nb₂O₉ films of different orientations reveal strong anisotropy following the general trend known for other layered perovskites. Systematic differences in polarization and coercive field can be consistently explained in terms of the different m values and the lack of lone-pair electrons. The latter contribute to a higher polarization and a higher coercive field for SrBi₂Nb₂O₉ thin films.     

Topotaxial Formation of Mg4Nb2O9 and MgNb2O6 Thin Films on MgO (001) Single Crystals by Vapor–Solid Reaction

Thin-film solid-state reactions in the system MgO–Nb₂O₅ are experimentally investigated. MgO (001) substrates are subjected to Nb-O vapor at different temperatures in high vacuum. Thin films containing the phases Mg₄Nb₂O₉ and MgNb₂O₆ are formed by a vapor–solid reaction between the Nb-O vapor and the substrate. The crystallographic orientations of these phases are studied by X-ray diffractometry including pole figure analysis. Mg₄Nb₂O₉ grows (11.4)-, (11.6)-, and (11.9)-oriented, whereas MgNb₂O₆ grows with a preferential (241) orientation. The crystallographic relationships and their origins are discussed.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.     

TIOx/Al2O3 Multilayer Ceramic Thin Films

Titanium oxide/aluminum oxide films have been deposited using molecular beam epitaxy methods and characterized by reflection high-energy electron diffraction and transmission electron microscopy techniques. Growth on silicon substrates below 973 K resulted in primarily amorphous multilayers. At 1323 K, the deposition of titanium in an oxygen atmosphere on (0001) Al₂O₃ substrates resulted in films of Ti₂O₃. These films consisted of small domains, up to 60 nm, slightly misoriented from a [1120] ∥ [1120] orientation relationship. Two variants of Ti₂O₃ were observed due to multiple positioning during growth. Closing the titanium shutter during growth resulted in an oriented TiO₂ film.     

Novel Synthesis of SrBi2Nb2O9 Powders From Hydroxide Precursors

Simple hydroxide precursors were used for the first time for the synthesis of a typical Aurivillius compound (SrBi₂Nb₂O₉ (SBN)) at a low temperature. This method is very advantageous because it circumvents the use of SrCO₃ in the case of conventional ceramics as well in the coprecipitation methods, thereby lowering the formation of the product phase. Commercially purchased strontium hydroxide is mixed thoroughly with freshly precipitated bismuth and niobium hydroxides in a stoichiometric ratio and heated at different temperatures ranging from 100°C to 750°C for 12 h. The sequence of the reaction and evolution of the product phase was monitored by X-ray diffraction (XRD) studies by recording the XRD for samples calcined at different temperatures. The incipient SBN phase begins to form at temperatures as low as 400°C, and phase formation was complete only at 650°C as revealed by the XRD observations. The differential thermal/thermogravimetric analyses) also corroborate this result. The morphology and average particle size of these powders were investigated by transmission electron microscopy studies.     

Tailoring the Microwave Dielectric Properties of MgNb2O6 and Mg4Nb2O9 Ceramics

The columbites MgNb₂O₆, MgTa₂O₆, and corundum-type Mg₄Nb₂O₉ ceramics were prepared by the conventional solid-state ceramic route. The structure and microstructure of the sintered samples were investigated by X-ray diffraction and scanning electron microscopic techniques. The microwave dielectric properties of the samples were measured by the resonance method in the frequency range 4–6 GHz. The dielectric properties have been tailored by forming a solid solution between MgNb₂O₆ and MgTa₂O₆ and by the substitution of TiO₂ for Nb₂O₅ in both MgNb₂O₆ and Mg₄Nb₂O₉ ceramics. The Mg(Nb_0.7Ta_1.3)O₆ has ɛ_r=29, Q _u× f =67 800 GHz, and τ_f=0.8 ppm/°C and the MgO–(0.4)Nb₂O₅–(1.5)TiO₂ composition has ɛ_r=34.5, Q _u× f =81 300 GHz, and τ_f=−2 ppm/°C.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Flexible Dielectric Bi1.5Zn1.0Nb1.5O7 Thin Films on a Cu-Polyimide Foil

Flexible thin films of Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) were deposited on a Cu/polyimide (PI) foil by aerosol deposition at room temperature. The BZN film thickness was in the range of 1.2–17.9 μm. Highly dense and nanocrystalline films were obtained without any heat treatment. The dielectric constant and loss of the film at 100 kHz were over 150 and 0.04, respectively. Furthermore, the as-deposited film showed markedly low leakage current densities of <10⁻⁹ A/cm² at 3.0 V. These reasonably high dielectric properties were due to the nanocrystallinity of the films. The results confirm the significant potential of the BZN films as passive components in flexible printed circuit board applications.     

Preparation of Grain-Oriented Sr0.5Ba0.5Nb2O6 Ferroelectric Ceramics by Magnetic Alignment

The properties of polycrystalline ceramics are strongly influenced by their crystallographic texture. In this study, highly grain-oriented tungsten bronze structure ferroelectric ceramics, Sr_0.5Ba_0.5Nb₂O₆, were successfully fabricated by magnetic alignment and gelcasting techniques using only the conventional solid-state-synthesized starting powder. Spherical Sr_0.5Ba_0.5Nb₂O₆ particles were aligned according to their anisotropic magnetic property in 40 vol% slurry in a 10 T magnetic field, and then in situ locked by polymerization via a gelcasting technique for 30 min. A 〈00 l 〉-axis orientation perpendicular to the magnetic field direction ( B ) was obviously observed in the green compact and sintered sample. The sintered Sr_0.5Ba_0.5Nb₂O₆ sample contained equiaxial grains and reached 98% theoretical density. Compared with the sample with randomly oriented grains, the magnetically aligned sample showed an enhanced with dielectric constant in the ⊥ B direction (1100 versus 750 at room temperature and 4300 versus 2800 at Curie temperature). This new method is readily applicable to other ceramics with tungsten bronze structure, and is expected to facilitate mass preparation of large and dense grain-oriented ceramic materials.     

Domain Structure and Fatigue Behavior of La3+-Doped SrBi2Ta2O9 Thin Films

Ferroelectric SrBi_1.4La_0.6Ta₂O₉ (SBLT) thin films were grown onto Pt/Ti/SiO₂/Si substrates by pulsed-laser deposition. With the aid of X-ray diffractometry, piezoresponse scanning probe microscopy, and ferroelectric-property measurements, a correlation between microstructure, as well as domain structure and ferroelectric properties, was established. Excluding the effect of preferential orientation on ferroelectric properties, the increase in remanent polarization was attributed to distortion of the perovskite-like sublattice and atom displacement. Despite the co-instantaneous observation of a 90° domain and slight fatigue behavior in the SBLT films, the 90° domain-wall clamping did not seem to account for the fatigue in the SBLT films. Instead, strain-stress aggravation of the SBLT sublattice, due to the substitution of La³⁺ into Bi³⁺ sites, decreased the self-regulated flexibility of the (Bi₂O₂)²⁺ layers and caused fatigue in the SBLT.     

Molten Salt Synthesis of Anisotropic Sr2Nb2O7 Particles

Growth of Sr₂Nb₂O₇ particle size in KCl melts occurs by reaction on insoluble Nb₂O₅ particles in the melt. Thus, Sr₂Nb₂O₇ size is controlled by the initial size of the reactants. By altering the reactant composition to include larger Nb-rich reactants such as SrNb₂O₆, 5-30 µm, anisotropic Sr₂Nb₂O₇ particles are formed.     

Formation and Stability of Ferroelectric BaTi2O5

BaTi₂O₅ (BT₂) is thermodynamically stable over a very narrow temperature range between 1220° and 1230°C: a modification to the BaO–TiO₂ phase diagram is proposed. This thermodynamic stability was shown by constructing a time–temperature transformation diagram for the decomposition of BT₂. Once formed, BT₂ appears to be stable indefinitely at 1220°–1230°C; at higher temperatures, the decomposition rate increases with temperature; at lower temperatures, the decomposition rate increases with decreasing temperature and passes through a maximum at ∼1200°C; below ∼1150°C, BT₂ has long-lived kinetic stability. Kinetic considerations show a nucleation and growth mechanism for decomposition, with a nucleation induction period that is very temperature dependent. BT₂ can be prepared by various routes, including solid-state reaction of oxides below ∼1100°C; because it is metastable at all temperatures other than 1220°–1230°C, its formation is an example of Ostwald's rule of successive reactions. Discrepancies in the literature concerning the reported stability range of BT₂ can be explained by the complex dependence on temperature and time of both its formation and decomposition, for both of which, the nucleation stage is rate limiting.     

Structural Variation of the BaTi4O9 Thin Films Grown by RF Magnetron Sputtering

BaTi₄O₉ thin films were grown on a Pt/Ti/SiO₂/Si substrate using rf magnetron sputtering and the structure of the thin films were then investigated. For the films grown at low temperature (≤350°C), an amorphous phase was formed during the deposition, which then changed to the BaTi₅O₁₁ phase when the annealing was conducted below 950°C. However, when the annealing temperature was higher than 950°C, a BaTi₄O₉ phase was formed. On the contrary, for the films grown at high temperature (>450°C), small BaTi₄O₉ grains were formed during the deposition, which grew during the annealing. The homogeneous BaTi₄O₉ thin films were successfully grown on Pt/Ti/SiO₂/Si substrate when they were deposited at 550°C and subsequently rapid thermal annealed at 900°C for 3 min.     

Synthesis of ZrO2 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers

Undoped or Y₂O₃-doped ZrO₂ thin films were deposited on self-assembled monolayers (SAMs) with either sulfonate or methyl terminal functionalities on single-crystal silicon substrates. The undoped films were formed by enhanced hydrolysis of zirconium sulfate (Zr(SO₄)·4H₄O) solutions in the presence of HCl at 70°C. Typically, these films were a mixture of two phases: nanocrystalline tetragonal- ( t -) ZrO₂ and an amorphous basic zirconium sulfate. However, films with little or no amorphous material could be produced. The mechanism of film formation and the growth kinetics have been explained through a coagulation model involving homogeneous nucleation, particle adhesion, and aggregation onto the substrate. Annealing of these films at 500°C led to complete crystallization to t -ZrO₂. Amorphous Y₂O₃-containing ZrO₂ films were prepared from a precursor solution containing zirconium sulfate, yttrium sulfate (Y₂(SO₄)₃8·H₂O), and urea (NH₂CONH₂) at pH 2.2–3.0 at 80°C. These films also were fully crystalline after annealing at 500°C.     

Microstructure of KTaxNb1−xO3 Thin Films on MgO (100) Single Crystals

Thin KTa_xNb_1−xO₃ (KTN) films were prepared by deposition of sol–gel precursor solutions on MgO (100) single crystals. Crystal structure and microstructure of the films as a function of processing parameters, such as rate, duration, and temperature of postdeposition heat treatment, were studied. Several techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were employed to analyze the films. It was observed that slow heating of KTN films promotes pyrochlore formation while fast-firing of the films results in predominant formation of the perovskioe phase. In slow-heated samples, TEM showed randomly oriented pyrochlore crystallites with a vermicular nanostructure of 10–30 nm with an interpenetrating porosity of the same range. In fast-fired samples, large perovskite pockets with pyrochlore crystallites scattered among them were seen. The large perovskite grains were on the order of 0.1–0.5 μm, irregular in shape and porous. Transmission electron diffraction indicated these were single crystals, and ferroelectric domains were observed in them. Films of up to 1 μm thick were obtained by multiple deposition of the sol–gel KTN. Dense films were achieved when each layer was densified at 750°C for 2 h before the next layer was deposited.