警钟长鸣

正金华一电镀厂数名工人给废水池清淤中毒2012年3月14日晚上6点左右,金华市金东区傅村镇祝家村国合电镀厂发生中毒事故,事故致1人死亡,5人中毒较深。14日,因为天气好,该电镀厂的员工给一个废水池放水清淤,结果在清淤时发生了中毒事故。     

Al-Ti-B细化含Zr铝合金中毒现象的研究进展

Zr是高强铝合金中普遍添加的合金元素,当用Al-Ti-B细化含Zr铝合金时,却会产生细化剂的中毒现象。Zr中毒随着时间的延长而加重,并且该过程是不可逆的。深入研究Zr中毒机制有重要应用价值。目前提出的Zr中毒机制有以下四种:一是Zr与TiB_2反应生成ZrB_2或(Ti_(1-x)Zr_x)B_2;二是Zr替换了TiB_2表面TiAl_3层中的Ti;三是Zr与Ti反应生成(Ti_(1-x)Zr_x)Al_3;四是Zr与杂质元素Fe反应生成Al_8Fe_4Zr。对Zr中毒机制的研究进展作了详细介绍。     

Zr和Mn对Al-Ti-B中间合金的影响

验证了铝合金中微量Zr及Mn对Al-Ti-B中间合金细化效果的影响。发现Mn对Al-Ti-B中间合金的细化效果无中毒作用,而Zr在一定浓度范围内显著降低其细化效果;而且提高熔炼温度会加剧Zr对Al-Ti-B中间合金的中毒作用。研究还发现,微量Al-Ti-B及Al-Ti中间合金也会使Zr对铝的细化效果产生中毒作用。     

什么是铬中毒？

铬中毒是指人体内的血液和尿液中铬的含量超过正常标准。从事化工和电镀两个工种的工人．容易铬中毒。     

掺杂Sn对V/UiO-66催化剂抗碱金属性能的影响

采用浸渍法,以UiO-66为载体,制备了V/UiO-66及改性Sn-V/UiO-66催化剂,并对催化剂的碱金属钾中毒进行了模拟,探讨了钒钛催化剂的反应机理和失活机理。结果表明,K负载后催化剂的晶型变化不大并且催化剂比表面积的变化呈现不规律波动。负载了碱金属以后,催化剂的金属氧化还原性能和表面酸量迅速降低,这是催化剂活性降低的主要原因。添加Sn能够增强VO_x与其他组分的相互作用,进而提高VO_x的可还原性及V⁵⁺的占比,使Sn-V/UiO-66催化剂表面的VO_x提供更多的酸性位点。中毒后的K-Sn-V/UiO-66催化剂仍然具有较高的总酸量和较强的氧化还原性,表明Sn-V/UiO-66催化剂具有优异的抗碱金属中毒能力。     

安全技术、劳动保护和环境保护：焊工职业所决定的锰中毒、帕金森氏病和锰对焊工的影响（一）．锰环境中的时效源和它对人体健康及发病率的影响作用

指出，焊工职业存在着在较年轻时患上锰中毒、帕金森氏神经性疾病的危险性。这是由于吸收了锰和焊接时产生的烟尘。文章的第一部分说明了锰对焊工的影响源，该金属对人体健康的影响及潜在毒性。第二部分报道了焊工患锰中毒和帕金森氏病的情况，探索了这些事实与在含锰量高的环境中作业的关系，给出了预防这类疾病的途径。图3参16     

安全技术、劳动保护和环境保护：焊工职业所决定的锰中毒、帕金森氏病和锰对焊工的影响（一）．锰环境中的时效源和它对人体健康及发病率的影响作用

指出，焊工职业存在着在较年轻时患上锰中毒、帕金森氏神经性疾病的危险性。这是由于吸收了锰和焊接时产生的烟尘。文章的第一部分说明了锰对焊工的影响源，该金属对人体健康的影响及潜在毒性。第二部分报道了焊工患锰中毒和帕金森氏病的情况，探索了这些事实与在含锰量高的环境中作业的关系，给出了预防这类疾病的途径。图3参16     

两起电镀企业清理污水池致人死亡事故引起的思考

正2012年3月14日晚7时,位于金华市金东区傅村镇祝家村的风起金属表面处理有限公司,发生了一起氰化物中毒事故,造成2人死亡3人受伤。起因是该厂在给厂内的一个废水池放水清理淤泥时,一名工人不慎掉进了废水池,其它几名工人分别前去施救,结果先后中毒。无独有偶,仅仅事隔不到3个月,金华市所辖的东阳市金罗马实业发展有限公司,于6月9日     

金华一电镀厂数名工人给废水池清淤中毒

2012年3月14日晚上6点左右，金华市金东区傅村镇祝家村国合电镀厂发生中毒事故，事故致1人死亡，5人中毒较深。     

案例分析:可口可乐美汁源中毒事件

事件综述2011年11月28号晚,长春市民刘某与其子楚某饮用可口可乐美汁源清新草莓口味果粒奶,相继发生疑似食物中毒,经120送医院救治,刘某昏迷,楚某死亡,临床诊断疑似有机磷中毒。经公安部门检验认定,剩余饮料中含有剧毒杀虫剂。在雪碧"汞中毒"事件发生后,可口可乐再次陷入"中毒门",这次的产品是不少小朋友爱喝的"美汁源"果粒奶优。     

Oriented growth of ZnO nanostructures on Si and Al substrates

Aligned ZnO nanorod arrays and oriented ZnO nanoplates were synthesized on Si and Al substrates, respectively, using a hydrothermal method without any surfactant. The process involved the deposition of ZnO seeds on the substrate and the oriented growth of ZnO nanostructure in aqueous solution. The ZnO seeds were indispensable for the alignment of ZnO nanorods and TEM and XRD analysis confirmed that the ZnO rods are single crystalline grown along [001] direction. Al substrate caused formation of (001) surface dominated ZnO nanoplates, in which ZnO preferential growth direction was suppressed. The photoluminescence spectra of the as-grown ZnO products were measured to indicate their structural and optical quality. These oriented ZnO nanostructures are expected to be prospectively applied in nanodevices fabrication.     

Al diffusion in ZnO nanowalls investigated by atom probe tomography

Synthesis of ZnO nanowall structures using Ni catalyst was studied. ZnO nanowalls were grown by vapour-liquid-solid method. Ni as being a catalyst in the formation of ZnO nanowalls provided nucleation sites for the nucleation and the growth of ZnO nanowalls. Even though the sapphire system with ZnO has the high stability, the reactions between ZnO nanowalls and the sapphire substrate formed a 10-nm-thick interlayer during ZnO nanowall growth. Moreover, during the growth of the ZnO nanowalls, diffusion of Ni and Al was not expected as the Ni-Sapphire system is known to be non-reactive. Atom-probe tomography revealed that Al and Ni diffused into the NiO interface and sapphire substrate. Al diffused along the interface generated by the growth of ZnO nanowall, but Ni diffused into the interlayer between ZnO and sapphire.     

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets (ZnOAl,ZnO(Al,Dy),ZnO(Al,Gd),ZnO(Al,Zr),ZnO(Al,Nb),and ZnO(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency (RF) magnetron sputtering.X-ray diffraction (XRD) analysis shows that the films are polyerystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the (002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 x 10-3 Ω·cm was obtained.     

ZnO纳米棒的制备及光催化性能研究

采用水热法制备ZnO纳米棒。利用X射线粉末衍射(XRD)仪和透射电镜(TEM)对其结构和形貌分别进行表征,并通过紫外-可见分光光度计分析ZnO纳米棒光降解甲基紫来研究其光催化活性。结果表明,以氢氧化钠和醋酸锌为原料,聚丙烯酰胺为表面活性剂制备得到直径约26nm,长度达400nm的单晶纤锌矿结构的ZnO纳米棒。添加ZnO纳米棒光催化剂时的光降解率为70%,未加ZnO纳米棒的光降解率为30%,表明ZnO纳米棒具有很好的光催化活性。     

退火处理对氧化锌纳米棒形貌及气敏性能的影响（英文）

研究水热合成氧化锌纳米棒的高温热稳定性。采用X射线衍射和扫描电镜对氧化锌纳米棒的结构与形貌进行表征。采用热重分析研究氧化锌纳米棒在热处理过程中的失重情况。结果表明:在退火温度低于400°C时,氧化锌纳米棒具有较好的热稳定性。当退火温度超过600°C时,氧化锌纳米棒的长径比明显降低并且纳米棒的团聚趋势加剧。退火处理对氧化锌纳米棒的气敏性能具有显著影响。与未经退火处理的氧化锌纳米棒相比,经历400°C退火处理的氧化锌纳米棒对浓度为25×10-6的H2灵敏度可以从2.22提高至3.56。经历400°C热退火处理的氧化锌纳米棒对H2表现出最优的气敏性能。     

The characterization of various ZnO nanostructures using field-emission SEM

Zinc oxide (ZnO) is a unique material that has prompted a vast amount of research. Various morphologies and sizes of ZnO materials have led to a wide range of promising applications. Although research related to the applications of ZnO is progressing rapidly, it has been an enormous challenge to produce uniform ZnO materials. A unique synthesis method to produce ZnO materials with various morphologies has been studied and is presented in this paper. Field-emission scanningelectron microscopy has been utilized to characterize ZnO materials in this study to show how the synthesis conditions control the morphologies of ZnO.     

Growth and optical properties of ZnO nanorods prepared through hydrothermal growth followed by chemical vapor deposition

We report on the synthesis of high-quality ZnO nanorods by combining hydrothermal growth (HG) and chemical vapor deposition (CVD) processes. Vertically aligned and closely packed ZnO nanorods were grown by HG on a sputtered ZnO seed layer on a SiO₂/Si (0 0 1) substrate. The top surface of the HG-prepared ZnO nanorods showed very flat surfaces compared with that of the sputtered ZnO seed layer. Therefore, the HG-prepared ZnO nanorods were used as a new alternative seed material for the CVD growth of the ZnO nanorods. Vertical ZnO nanorods were grown by CVD on both the new HG-prepared nanorod seed material and the sputtered ZnO seed layer. The CVD-prepared ZnO nanorods on new HG-prepared nanorod seed material showed better crystalline quality and superior optical properties than the CVD-prepared ZnO nanorods on sputtered seed layer. The former showed negligible deep-level emissions at room temperature photoluminescence measurements. The intensity ratio of near-band-edge emissions to deep-level emissions from the former was about 910, but that from the latter was about 151. This implies that the HG-prepared ZnO nanorods can be used as a promising new seed material for nanostructure synthesis.     

Effects of Oxide-Modified Spherical ZnO on Electrical Properties of Ag/ZnO Electrical Contact Material

Silver-zinc oxide (Ag/ZnO) electrical contact material is widely used as contacts of the medium duty switching devices. Effects of modified ZnO on properties of Ag/ZnO electrical contact material were investigated in this work. NiO and CuO were introduced to modify spherical ZnO by a chemical solution nano-coating method. Ag/ZnO contacts prepared using the modified spherical ZnO were produced by powder metallurgy (PM) method in a muffle furnace in temperature ranges from 750 to 900 °C. Results show that electrical conductivity, stability of relative density, and Vickers’ hardness of Ag/ZnO electrical contact material can be improved by the addition of NiO because of the formation of NiO solid solution Zn_0.2Ni_0.8O. The addition of CuO to Ag/ZnO electrical contact material makes arcing energy and mass loss lower. Since this is attractive for a longer service life, using NiO and CuO co-modified ZnO as a second phase may be a promising way to improve properties of Ag/ZnO electrical contact material. Hence, the presented results could also be useful for the design of a new Ag/ZnO electrical contact material.     

预沉积ZnO薄膜对ZnO−MoS2/ZnO复合涂层结构与性能影响

目的 通过优化原子层沉积工艺获取不同厚度ZnO薄膜,研究ZnO薄膜晶体取向对ZnO?MoS2涂层生长结构的影响,获得具有优异摩擦学性能的ZnO?MoS2/ZnO复合涂层。方法 采用原子层沉积法在不锈钢基体上预沉积不同厚度的ZnO薄膜,再用射频磁控溅射技术继续沉积ZnO?MoS2涂层,制备ZnO?MoS2/ZnO固体润滑复合涂层。结果 X射线衍射分析发现,预沉积ZnO薄膜有诱导后续ZnO?MoS2涂层沉积生长的作用,预沉积100 nm厚ZnO薄膜的ZnO?MoS2/ZnO复合涂层显示出宽化的MoS2 (002)馒头峰,其截面形貌显示为致密的体型结构,获得的摩擦因数最低(0.08),纳米硬度最高(2.33 GPa),硬度/模量比显示该复合涂层的耐磨损性能得到提升;X射线光电子能谱分析结果表明,复合涂层表面游离S与空气中水发生反应程度大约为原子数分数5%,显示复合涂层耐湿性能较好;基于原子层沉积ZnO薄膜生长及其对后续ZnO?MoS2涂层生长的影响分析,提出了ZnO?MoS2/ZnO复合涂层磨损模型,阐明了ZnO薄膜对复合涂层结构及摩擦学性能的影响,并以该模型解释了200 nm厚 ZnO薄膜上沉积ZnO?MoS2涂层出现的摩擦因数由高到低的变化趋势及最终磨损失效现象。结论 合适的原子层沉积制备的ZnO薄膜有利于MoS2 (002)取向生长,可有效提升ZnO?MoS2/ZnO复合涂层的摩擦学性能;控制ZnO薄膜厚度,可实现ZnO薄膜与基底及ZnO?MoS2层间界面之间的优化结合,以制得具有较好摩擦学性能及使用寿命的ZnO?MoS2/ZnO复合涂层。     

Effects of pretreatment of substrates on the preparation of large scale ZnO nanotube arrays

Well-aligned hexagonal ZnO nanotubes (NTs) arrays were synthesized on pretreated indium fin oxide (ITO) substrates by a simple hydro-thermal method. The morphology and structure of the products were characterized by scanning electron microscopy (SEM) and X-my dif-fraction analysis (XRD). A new method of substrate pretreatment was introduced to prepare ZnO coated films. The size of ZnO seeds and the formation rote of ZnO NTs were investigated. Further, the mechanism of the preparation of ZnO NTs was discussed. The photoluminescence (PL) spectrum measurement shows fairly internal defects existing in ZnO nanotubes.