Fine‐Pitch Solder on Pad Process for Microbump Interconnection

A cost‐effective and simple solder on pad (SoP) process is proposed for a fine‐pitch microbump interconnection. A novel solder bump maker (SBM) material is applied to form a 60‐μm pitch SoP. SBM, which is composed of ternary Sn3.0Ag0.5Cu (SAC305) solder powder and a polymer resin, is a paste material used to perform a fine‐pitch SoP through a screen printing method. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder, the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. Test vehicles with a daisy chain pattern are fabricated to develop the fine‐pitch SoP process and evaluate the fine‐pitch interconnection. The fabricated Si chip has 6,724 bumps with a 45‐μm diameter and 60‐μm pitch. The chip is flip chip bonded with a Si substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of the underfill. The optimized bonding process is validated through an electrical characterization of the daisy chain pattern. This work is the first report on a successful operation of a fine‐pitch SoP and microbump interconnection using a screen printing process.     

Novel Bumping Material for Solder‐on‐Pad Technology

A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder‐on‐pad technology of the fine‐pitch flip‐chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 µm in one direction.     

Novel Maskless Bumping for 3D Integration

A novel, maskless, low‐volume bumping material, called solder bump maker, which is composed of a resin and low‐melting‐point solder powder, has been developed. The resin features no distinct chemical reactions preventing the rheological coalescence of the solder, a deoxidation of the oxide layer on the solder powder for wetting on the pad at the solder melting point, and no major weight loss caused by out‐gassing. With these characteristics, the solder was successfully wetted onto a metal pad and formed a uniform solder bump array with pitches of 120 µm and 150 µm.     

Optimization of Material and Process for Fine Pitch LVSoP Technology

For the formation of solder bumps with a fine pitch of 130 μm on a printed circuit board substrate, low‐volume solder on pad (LVSoP) technology using a maskless method is developed for SAC305 solder with a high melting temperature of 220°C. The solder bump maker (SBM) paste and its process are quantitatively optimized to obtain a uniform solder bump height, which is almost equal to the height of the solder resist. For an understanding of chemorheological phenomena of SBM paste, differential scanning calorimetry, viscosity measurement, and physical flowing of SBM paste are precisely characterized and observed during LVSoP processing. The average height of the solder bumps and their maximum and minimum values are 14.7 μm, 18.3 μm, and 12.0 μm, respectively. It is expected that maskless LVSoP technology can be effectively used for a fine‐pitch interconnection of a Cu pillar in the semiconductor packaging field.     

Novel Bumping Process for Solder on Pad Technology

A novel bumping process using solder bump maker is developed for the maskless low‐volume solder on pad (SoP) technology of fine‐pitch flip chip bonding. The process includes two main steps: one is the aggregation of powdered solder on the metal pads on a substrate via an increase in temperature, and the other is the reflow of the deposited powder to form a low‐volume SoP. Since the surface tension that exists when the solder is below its melting point is the major driving force of the solder deposit, only a small quantity of powdered solder adjacent to the pads can join the aggregation process to obtain a uniform, low‐volume SoP array on the substrate, regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of 130 μm is successfully formed.     

Novel Bumping and Underfill Technologies for 3D IC Integration

In previous work, novel maskless bumping and no‐flow underfill technologies for three‐dimensional (3D) integrated circuit (IC) integration were developed. The bumping material, solder bump maker (SBM) composed of resin and solder powder, is designed to form low‐volume solder bumps on a through silicon via (TSV) chip for the 3D IC integration through the conventional reflow process. To obtain the optimized volume of solder bumps using the SBM, the effect of the volumetric mixing ratio of resin and solder powder is studied in this paper. A no‐flow underfill material named “fluxing underfill” is proposed for a simplified stacking process for the 3D IC integration. It can remove the oxide layer on solder bumps like flux and play a role of an underfill after the stacking process. The bumping process and the stacking process using the SBM and the fluxing underfill, respectively, for the TSV chips are carefully designed so that two‐tier stacked TSV chips are sucessfully stacked.     

Interconnection Technology Based on InSn Solder for Flexible Display Applications

A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than 150°C. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than 150°C. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip‐chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a 20 μm pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at 130°C.     

Template‐Free Vibrational Indentation Patterning (VIP) of Micro/Nanometer‐Scale Grating Structures with Real‐Time Pitch and Angle Tunability

A template‐free, high‐throughput patterning technique named vibrational indentation‐driven patterning (VIP), which achieves continuous, period‐tunable fabrication of micro/nanometer‐scale grating structures, is reported. In VIP, a tilted edge of a hard material vertically vibrating at high frequency makes periodic indentations onto a moving substrate of any material softer than the tool, thereby continuously creating grating patterns at high speed. By modulating the tool vibration frequency, substrate feeding rate, and the tool tilting angle, the period‐variable chirped gratings and angle‐tunable blazed gratings can be easily achieved; they can be utilized in various optoelectronics and photonics applications. As an example, an infrared polarizer directly fabricated from the VIP‐created blazed grating is demonstrated.     

Enhanced Wettability of Oxidized Copper with Lead-Free Solder by Ar-H<Subscript>2</Subscript> Plasmas for Flip-Chip Bumping

Enhanced solder wettability (SW) of oxidized-Cu (OC) with 96.5Sn-3Ag-0.5Cu lead-free solder (LFS) by Ar-H₂ plasmas was investigated. The SW of OC was significantly improved from 0% wetting of Cu oxidized in air at 260°C for 1 h to 100% wetting of OC modified by Ar-H₂ plasmas for 10 min. The SW of Cu was found to be highly dependent on the surface characteristics of Cu. By decreasing the total surface energy (TSE), decreasing the polar surface energy (PSE), and increasing the dispersive surface energy (DSE) on the surfaces of OC modified by Ar-H₂ plasmas, the SW with LFS improves. X-ray photoelectron spectroscopy (XPS) indicates that Ar-H₂ plasma treatment is used to remove the copper oxides CuO and Cu₂O from the OC surfaces. The ratio of the total amount of Cu₂O to CuO was found to be a good indication of how the copper oxides CuO and Cu₂O affect the PSE, DSE, and SW of Cu.     

A Microfluidic Tool for Fine‐Tuning Motion of Soft Micromotors

Microfluidics is an ideal tool for the design of self‐assembled micromotors. It allows for easy change of solutions, catalysts, and flow rates, which affect shape, structure, and motion of the resulting micromotors. A microfluidic tool generating aqueous‐two‐phase‐separating droplets of UV‐polymerizable poly(ethylene glycol)diacrylate (PEGDA) and an inert phase, salt, or polysaccharide, is utilized to fabricate asymmetric microbeads. Different molecular weights and branching of polysaccharides are used to study the effect on shape, surface roughness, and motion of the particles. The molecular weight of the polysaccharide determines the roughness of the motors inner surface. Smooth openings are obtained by low molecular weight dextran, while high surface roughness is obtained with a high molecular weight branched polysaccharide. Since roughness plays an important role in bubble pinning, it influences both speed and trajectory. Increasing speeds are obtained with increasing roughness and trajectories ranging from linear, circular to tumble‐and‐run depending on the nature of bubble pinning. This microfluidic tool allows for fine‐tuning shape, structure, and motion by easy change of solutions, catalysts, and flow rates.     

Surface Energy‐Controlled SERS Substrates for Molecular Concentration at Plasmonic Nanogaps

Positioning probe molecules at electromagnetic hot spots with nanometer precision is required to achieve highly sensitive and reproducible surface‐enhanced Raman spectroscopy (SERS) analysis. In this article, molecular positioning at plasmonic nanogaps is reported using a high aspect ratio (HAR) plasmonic nanopillar array with a controlled surface energy. A large‐area HAR plasmonic nanopillar array is generated using a nanolithography‐free simple process involving Ar plasma treatment applied to a smooth polymer surface and the subsequent evaporation of metal onto the polymer nanopillars. The surface energy can be precisely controlled through the selective removal of an adsorbed self‐assembled monolayer of low surface‐energy molecules prepared on the plasmonic nanopillars. This process can be used to tune the surface energy and provide a superhydrophobic surface with a water contact angle of 165.8° on the one hand or a hydrophilic surface with a water contact angle of 40.0° on the other. The highly tunable surface wettability is employed to systematically investigate the effects of the surface energy on the capillary‐force‐induced clustering among the HAR plasmonic nanopillars as well as on molecular concentration at the collapsed nanogaps present at the tops of the clustered nanopillars.     

Heat‐Free Fabrication of Metallic Interconnects for Flexible/Wearable Devices

Exploiting interfacial excess (Γ), Laplace pressure jump (ΔP), surface work, and coupling them to surface reactivity have led to the synthesis of undercooled metal particles. Metastability is maintained by a core–shell particle architecture. Fracture of the thin shell leads to solidification with concomitant sintering. Applying Scherer's constitutive model for load‐driven viscous sintering on the undercooled particles implies that they can form conductive traces. Combining metastability to eliminate heat and robustness of viscous sintering, an array of conductive metallic traces can be prepared, leading to plethora of devices on various flexible and/or heat sensitive substrates. Besides mechanical sintering, chemical sintering can be performed, which negates the need of either heat or load. In the latter, connectivity is hypothesized to occur via a Frenkel's theory of sintering type mechanism. This work reports heat‐free, ambient fabrication of metallic conductive interconnects and traces on all types of substrates.     

Unconjugated Side‐Chain Engineering Enables Small Molecular Acceptors for Highly Efficient Non‐Fullerene Organic Solar Cells: Insights into the Fine‐Tuning of Acceptor Properties and Micromorphology

2D conjugated side‐chain engineering is an effective strategy that is widely utilized to construct benzodithiophene‐based polymers. Herein, an unconjugated side‐chain strategy to design fused‐benzodithiophene‐based non‐fullerene small molecule acceptors (SMAs) via vertical aromatic side‐chain engineering on the ladder‐type core is employed. Three SMAs named BTTIC‐Th, BTTIC‐TT, and BTTIC‐Ph with thiophene, thieno[3,2‐b]thiophene, and benzene, respectively, as side chains, are designed and synthesized. Three SMAs exhibit similar absorption ranges but different lowest unoccupied molecular orbital (LUMO) energy levels due to the different strength of the δ‐inductive effect between vertical aromatic side chains and their electron‐rich core. Organic solar cells based on PBDB‐T:BTTIC‐TT achieve a power conversion efficiency (PCE) of 13.44%, which is higher than the PCE of devices based on PBDB‐T:BTTIC‐Th (12.91%) and PBDB‐T:BTTIC‐Ph (9.14%). The difference in device performance is investigated by electrical and morphological characterizations. A large domain size and different types of π–π stacking are found in the bulk heterojunction layer of PBDB‐T:BTTIC‐Ph blend film, which are detrimental to exciton dissociation and charge transport. Overall, it is demonstrated that when designing unconjugated side chains, thieno[3,2‐b]thiophene is superior to thiophene and benzene through its dual roles of promoting the LUMO energy level and optimizing the morphology. These results shed light on the side‐chain engineering of high‐performance non‐fullerene SMAs.     

Electric‐Field‐Assisted Charge Generation and Separation Process in Transition Metal Oxide‐Based Interconnectors for Tandem Organic Light‐Emitting Diodes

The charge generation and separation process in transition metal oxide (TMO)‐based interconnectors for tandem organic light‐emitting diodes (OLEDs) is explored using data on electrical and spectral emission properties, interface energetics, and capacitance characteristics. The TMO‐based interconnector is composed of MoO₃ and cesium azide (CsN₃)‐doped 4,7‐diphenyl‐1,10‐phenanthroline (BPhen) layers, where CsN₃ is employed to replace the reactive metals as an n‐dopant due to its air stability and low deposition temperature. Experimental evidences identify that spontaneous electron transfer occurs in a vacuum‐deposited MoO₃ layer from various defect states to the conduction band via thermal diffusion. The external electric‐field induces the charge separation through tunneling of generated electrons and holes from MoO₃ into the neighboring CsN₃‐doped BPhen and hole‐transporting layers, respectively. Moreover, the impacts of constituent materials on the functional effectiveness of TMO‐based interconnectors and their influences on carrier recombination processes for light emission have also been addressed.     

Metal Halide Perovskite Light‐Emitting Devices: Promising Technology for Next‐Generation Displays

As the requirements and expectation for displays in society are growing, higher standards of the display technology are proposed, including wider color gamut, higher color purity, and higher resolution. The recent emergence of light‐emitting halide perovskites has come with numerous advantages, such as high charge‐carrier mobility, tunable emission wavelength, narrow emission linewidth, and intrinsically high photoluminescence quantum yield. Recent advancement of perovskite‐based light‐emitting diodes (PeLEDs) as a promising technology for next‐generation displays is reviewed. Here, how the attractive optical and electrical properties of perovskite materials can be translated into high PeLED performance are discussed, and working mechanisms and optimization approaches of both perovskite materials and the respective devices are analyzed. On the material side this includes the control of size and composition of perovskites grains and nanocrystals, surface and interface passivation, doping and alloying, while on the device side this includes the interfacial engineering and energy level adjustments, and photon emission enhancement. Several challenges such as performance of blue PeLEDs, the environmental and operational stability of PeLEDs, and the toxicity issues of lead halide perovskites are discussed, and perspectives on future developments of perovskite materials and PeLEDs for the display technology are offered.     

Self‐Doped Conjugated Polymeric Nanoassembly by Simplified Process for Optical Cancer Theragnosis

To access smart optical theragnosis for cancer, an easily processable heterocyclic conjugated polymer (poly(sodium3‐((3‐methyl‐3,4‐dihydro‐2H‐thieno[3,4‐b][1,4]dioxepin‐3‐yl)methoxy)propane‐1‐sulfonate), PPDS) nanoassembly is fabricated by a surfactant‐free one‐step process, without the laborious ordinary multicoating process. The conjugated nanoassembly, with a self‐doped structure, provides strong absorbance in the near‐infrared (NIR) range even in a neutral pH medium and exhibits excellent stability (>six months). In addition, the prepared PPDS nanoassembly shows a high photothermal conversion efficiency of 31.4% in organic photothermal nanoparticles. In particular, the PPDS nanoassembly is stably suspended in the biological medium without any additives. Through a simple immobilization with the anti‐CD44 antibody, the prepared biomarker‐targetable PPDS nanoassembly demonstrates specific targeting toward CD44 (expressed in stem‐like cancer cells), allowing NIR absorbance imaging and the efficient targeted photothermal damaging of CD44‐expressing cancer cells, from in vitro 3D mammospheres (similar to the practical structure of tumor in the body) to in vivo xenograft mice tumor models (breast cancer and fibrosarcoma). In this study, the most simplified preparation method is for this organic conjugated polymer‐based nanoassembly by a molecular approach is reported, and demonstrated as a highly promising optical nanoagent for optical cancer theragnosis.     

A Transparent Logic Circuit for RFID Tag in a‐IGZO TFT Technology

This paper proposes a transparent logic circuit for radio frequency identification (RFID) tags in amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) technology. The RFID logic circuit generates 16‐bit code programmed in read‐only memory. All circuits are implemented in a pseudo‐CMOS logic style using transparent a‐IGZO TFTs. The transmittance degradation due to the transparent RFID logic chip is 2.5% to 8% in a 300‐nm to 800‐nm wavelength. The RFID logic chip generates Manchester‐encoded 16‐bit data with a 3.2‐kHz clock frequency and consumes 170 μW at . It employs 222 transistors and occupies a chip area of 5.85 mm².     

Sea‐Urchin‐Inspired 3D Crumpled Graphene Balls Using Simultaneous Etching and Reduction Process for High‐Density Capacitive Energy Storage

A crumpled configuration of graphene is desirable for preventing irreversible stacking between individual nanosheets, which can be a major hurdle toward its widespread application. Herein a sea‐urchin‐shaped template approach is introduced for fabricating highly crumpled graphene balls in bulk quantities with a simple process. Simultaneous chemical etching and reduction process of graphene oxide (GO)‐encapsulated iron oxide particles results in dissolution of the core template with spiky morphology and conversion of the outer GO layers into reduced GO layers with increased hydrophobicity which remain in contact with the spiky surface of the template. After completely etching, the outer graphene layers are fully compressed into the crumpled form along with decrease in total volume by etching. The crumpled balls exhibit significantly larger surface area and good water‐dispersion stability than those of stacked reduced GO or other crumple approaches, even though they also show comparable electrical conductivity. Furthermore, they are easily assembled into 3D macroporous networks without any binders through typical processes such as solvent casting or compression molding. The graphene networks with less pore volume still have the crumpled morphology without sacrificing the properties regardless of the assembly processes, producing a promising active electrode material with high gravimetric and volumetric energy density for capacitive energy storage.     

Process development and comparison of various boron emitter technologies for high‐efficiency (~21%) n‐type silicon solar cells

This paper shows for the first time a comparison of commercial‐ready n‐type passivated emitter , rear totally diffused solar cells with boron (B) emitters formed by spin‐on coating, screen printing, ion implantation, and atmospheric pressure chemical vapor deposition. All the B emitter technologies show nearly same efficiency of ~20%. The optimum front grid design (5 busbars and 100 gridlines), calculated by an analytical modeling, raised the baseline cell efficiency up to 20.5% because of reduced series resistance. Along with the five busbars, rear point contacts formed by laser ablation of dielectric and physical vapor deposition Al metallization resulted in another 0.4% improvement in efficiency. As a result, 20.9% efficient n‐type passivated emitter, rear totally diffused cell was achieved in this paper. Copyright © 2016 John Wiley & Sons, Ltd.