磁控反应溅射制备GexC1-x薄膜的结构

利用射频磁控反应溅射以Ar、CH4 为原料气体 ,在较宽的工艺参数范围内制备出了GexC1-x薄膜。利用X射线衍射 (XRD)、X射线光电子谱 (XPS)对制备的薄膜进行了分析。结果表明 ,GexC1-x薄膜的结构强烈依赖于制备的工艺参数。当沉积温度较低、射频功率不大时 ,GexC1-x薄膜主要为非晶态结构。随着沉积温度升高、射频功率增大 ,薄膜中出现Ge微晶相。GexC1-x薄膜中Ge与C发生电荷的转移 ,形成化学键。     

Fe3+掺杂TiO2薄膜的制备与表征

利用射频磁控溅射技术在载玻片衬底上沉积了TiO2及Fe3+掺杂的TiO2薄膜,并利用X射线衍射、拉曼光谱和紫外-分光光度计对所制备的薄膜进行了结构与性能表征。结果表明,所制备的TiO2薄膜为锐钛矿相结构,Fe3+掺杂后TiO2薄膜的晶化程度降低,光催化活性减弱。     

射频反应磁控溅射制备氮化铜薄膜

使用射频反应磁控溅射法,在不同的射频功率和气体流量比下制备了氮化铜薄膜,并用X射线衍射仪和原子力显微镜对薄膜的结构进行表征。研究结果表明:薄膜呈现择优生长规律,由低气体流量比的Cu3N(111)晶面转向高分压的(100)面;薄膜的光学带隙在1.44～1.69eV之间,电阻率在60～5.6×105Ω.m之间,二者都随气体流量比的增大而增大。     

射频输入功率对类金刚石薄膜性能的影响

为了得到类金刚石薄膜的性质和制备参数之间的对应关系,利用射频等离子体增强化学气相淀积在单晶硅的(100)面上制备了类金刚石薄膜,反应气体是甲烷和氢气的混合气.研究了射频源的输入功率对类金刚石薄膜性能的影响.采用Raman光谱、X射线光电子能谱、原子力显微镜和纳米压痕仪对薄膜的微观结构、表面形貌、硬度和弹性模量进行了研究,结果表明:制备的薄膜具有典型的不定型碳的结构特征、薄膜致密均匀,随着入射功率的提高,薄膜的sp3含量、硬度以及弹性模量先增加后减小,并且在100W时达到最大值,在400W时薄膜出现碳化.     

射频磁控溅射制备TiO2光催化薄膜的表征

在不同的Ar和O2气流量比下，利用射频磁控溅射技术在载波片上制备了TiO2薄膜。利用X射线衍射(XRD)，原子力显微镜(AFM)，拉曼光谱和UV-VIS-NIR分光光度计等技术对薄膜进行了表征。结果表明在Ar：O2=20sccm：5sccm下制备的薄膜具有较高的光催化活性。     

纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响

用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对薄膜在纯氩气中进行了400～600℃的退火处理.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%.500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm.     

Fe-N粉末的结构与磁性研究

利用化学反应制备氧化铁粉然后气体渗氮得到细的氮化铁粉,采用X射线衍射(XRD)和超导量子干涉仪(SQUID)对所制备的样品进行结构和磁性性能分析.结果表明,这种氮化铁粉的主要成分是γ-Fe4N,其饱和磁化强度为178.6emu/g.     

Si和UO_2芯块表面ZrB_2薄膜的制备和表征

Zr B2薄膜作为可燃中子毒物在反应堆上得以应用。本研究采用磁控溅射的方法在Si(111)和UO2芯块表面制备了Zr B2薄膜。利用扫描电镜(SEM)对薄膜的表面与截面形貌进行了观察,利用X射线衍射(XRD)仪、X射线能谱(EDS)、X射线光电子谱(XPS)对薄膜的物相及成分进行了表征,采用热循环以及划痕法对膜层与基体的结合性能进行考核。结果表明,所制备的薄膜为Zr B2薄膜且膜层较为纯净,基本只含有Zr和B 2种元素;Zr B2膜层和UO2基体结合性能良好,膜层生长致密均匀;膜层破坏的临界载荷约为455 m N。     

石墨烯/6H-SiC(0001)表面高质量USb2 薄膜的制备和表征

重费米子体系可以通过维度等调控手段来展现出丰富而有吸引力的量子基态。首次通过分子束外延技术在石墨烯/6H-SiC（0001）衬底成功制备了高质量的USb₂薄膜。结合反射式高能电子衍射、X射线衍射、电输运和X射线光电子能谱测量,证明了所制备的USb₂薄膜是高质量的单晶薄膜。此外,利用扫描隧道显微镜和角分辨光电子能谱对USb₂薄膜的表面形貌、原子结构和能带结构进行了表征。结果显示,生长的USb₂薄膜的表面原子结构、电输运性质和能带结构与块体USb₂单晶相似。最后,高质量USb₂薄膜的成功制备和表征为未来通过生长理想厚度的超薄膜在低维铀基重费米子系统中探索奇妙性能提供了宝贵的实验经验。     

GNiCr40Al3Ti合金表面Cr-DLC、CrAlN和CrN薄膜在去离子水环境中的摩擦磨损性能

目的 在去离子水环境中,研究GNiCr40Al3Ti合金表面制备的铬掺杂类金刚石(Cr-DLC)、氮化铬铝(CrAlN)和氮化铬(CrN)等薄膜的摩擦磨损性能。方法 在GNiCr40Al3Ti合金表面采用离子源辅助非平衡磁控溅射制备Cr-DLC薄膜,采用多弧离子镀技术制备CrAlN薄膜和CrN薄膜。利用冷场发射扫描电镜、拉曼光谱仪和X射线衍射仪,对薄膜的微观结构和形貌进行分析。利用显微硬度计、摩擦磨损试验机、白光干涉扫描轮廓仪等,对薄膜的硬度、摩擦磨损性能、磨痕二维轮廓等进行研究。结果 在10 h连续的去离子水环境摩擦过程中,CrN薄膜的平均摩擦系数最低,仅为0.17,比GNiCr40Al3Ti合金的摩擦系数降低了54%。与GNiCr40Al3Ti合金相比,其表面制备的Cr-DLC、CrAlN和CrN薄膜在去离子水环境摩擦条件下都减小了磨损体积,其中,CrN薄膜表现出最好的耐磨性,磨损体积为0.017 mm³,仅为GNiCr40Al3Ti合金磨损体积的0.18%。Cr-DLC薄膜与CrAlN薄膜的耐磨性不及CrN薄膜,主要是由薄膜的微观结构造成的,Cr-DLC薄膜的柱状疏松结构造成薄膜过早的被磨穿,CrAlN薄膜中存在的Cr相引起薄膜硬度降低,从而降低了抗剪切的能力。结论 在去离子水环境中,CrN薄膜具有最低的摩擦系数和最佳的耐磨性。     

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.     

Suppressing the surface roughness and columnar growth of silicon nitride films

The growth and structure evolution of silicon nitride films prepared by radio frequency magnetron sputtering at low pressure were investigated for thickness changes. Grazing-incidence X-ray reflectivity, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy were used to study the structure, surface roughness and composition, respectively, of the films. It was found that with an increase in thickness from 5 to 830 nm, the silicon nitride films have a similar surface structure and their surface roughness only slightly increases. The surface roughness of all the silicon nitride films is only a little more than 0.2 nm, much less than previously reported results. AFM measurement of the fractured film surface indicated that thin silicon nitride films with a thickness below approximately 300 nm have a dense, smooth and uniform structure, and columnar structures gradually appear only in thick films. These results are mainly attributed to the special design of the sputtering system and the energetic particle bombardment of the growing surface, by which the surface roughness and columnar growth were suppressed.     

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Hydrogenated microcrystalline silicon(μc-Si∶H)thin films were deposited by an radio frequency(RF)(13.56 MHz)magnetron sputtering at different substrate temperat...     

以磁控溅射＋自组装反应方式制备GaN薄膜

为了用简单的方法得到GaN薄膜，以射频磁控溅射方法将Ga2O3薄膜沉积到Si（111）衬底上的SiC中间层上，通过其同NH3的自组装反应形成了GaN薄膜。同样，利用磁控溅射方法把SiC层沉积到Si衬底。其目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的应力。为了比较中间层的作用，对按照两种方案（使用中间层和不使用中间层）实验样品进行了测试和比较。实验结果证实了SiC中间层提高了GaN薄膜的质量。     

Effects of Deposition Temperature on the Structure and Hardness of BN Films Prepared by a Gradient Temperature Method

采用温度梯度法,通过MW-ECR射频磁控溅射在硅片基底上制备了六方和立方混合的氮化硼薄膜。研究了薄膜的键结构,化学成分和力学性能。结果显示,对于氮化硼立方相的出现存在温度阈值,薄膜的硬度随沉积温度提高而提高。相对于传统薄膜制备方法,温度梯度方法具有更高的效率。     

离子束辅助磁控溅射沉积TiN薄膜的研究

利用三离子束辅助沉积设备，以离子束辅助沉积、磁控溅射和离子束辅助磁控溅射几种工艺在GCr15基体上沉积TiN薄膜。实验结果表明：离子束辅助磁控溅射有效地提高了薄膜的硬度、耐磨性和耐蚀性，改善了膜基结合力。     

气压对离子源增强磁控溅射制备氮化铝薄膜的影响

目的 制备性能优异的氮化铝薄膜.方法 采用射频感应耦合离子源辅助直流磁控溅射的方法 制备氮化铝薄膜,在不同的气压下,在Si(100)基片和普通玻璃上生长了不同晶面取向的氮化铝薄膜.使用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)分析氮化铝薄膜的结构、晶面取向、表面形貌及薄膜表面粗糙度,使用紫外可见分光光度计测定薄膜的透过率,并计算薄膜的禁带宽度.研究气压的大小对磁控溅射制备氮化铝薄膜微观结构的影响.结果 在各气压下,薄膜生长以(100)面取向为主.在0.7Pa前,(100)面的衍射峰强度逐渐增强,0.7 Pa之后减弱.(002)面衍射峰强度在0.6Pa之前较大,0.6Pa之后变小.各气压下薄膜表面均方根粗糙度均小于3nm,且随着气压的增大先增大后减小,0.7 Pa时最大达到2.678nm.各气压下所制备薄膜的透过率均大于60%,0.7Pa时薄膜的禁带宽度为5.4eV.结论 较高气压有利于(100)晶面的生长,较低气压有利于(002)晶面的生长;(100)面衍射峰强度在0.7 Pa时达到最大;随气压的增大,薄膜表面粗糙度先增大后减小;所制备的薄膜为直接带隙半导体薄膜.     

Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

SYNTHESIZE amorphous carbon nitride(hereafterreferred to as a-CNx)films was attempted even beforethe theoretical work by Liu and Cohen[1,2]whopredicted the possible existence of P-C3N4with bulkmodulus comparable to or even greater than that ofdiamond.Cuomo et al.were probably the first todeposit CNX films using radio frequency(RF)sputtering of carbon targets in nitrogen ambient[3].Han and Feldman obtained40percent nitrogen contentusing RF plasma in a mixture of methane and nitrogen[4]…     

溅射功率对射频磁控溅射Al掺杂ZnO（ZAO）薄膜性能的影响

用射频磁控溅射技术,在纯氩气氛中不同溅射功率（120 W~210 W）下于玻璃衬底上制备了Al掺杂ZnO（ZAO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析。结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω.cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67Ω.cm降低到21.08Ω.cm。     

Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film

Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) — N₂ (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested.